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1. 发明申请

US20120107576A1 TAPE FOR HOLDING CHIP, METHOD OF HOLDING CHIP-SHAPED WORKPIECE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING TAPE FOR HOLDING CHIP, AND METHOD OF MANUFACTURING TAPE FOR HOLDING CHIP 审中-公开
标题翻译：用于控股芯片的胶带，保持芯片形成的工件的方法，使用用于控制芯片的带的半导体器件的制造方法以及用于保持芯片的制造带的方法
公开(公告)号：US20120107576A1
公开(公告)日：2012-05-03
申请号：US13347432
申请日：2012-01-10
申请人： Shuhei MURATA , Takeshi MATSUMURA , Koji MIZUNO , Fumiteru ASAI
发明人： Shuhei MURATA , Takeshi MATSUMURA , Koji MIZUNO , Fumiteru ASAI
IPC分类号： B32B7/12 , B05D3/06 , B05D3/02 , B05D5/08
CPC分类号： H01L21/67132 , B32B7/12 , C09J7/22 , C09J7/38 , C09J2201/36 , C09J2203/326 , H01L24/45 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/73265 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/181 , H01L2924/3025 , Y10T428/24331 , Y10T428/24777 , Y10T428/24802 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The present invention aims to provide a tape for holding a chip that makes pasting and peeling of a chip-shaped workpiece easy. It is a tape for holding a chip having a configuration in which a pressure-sensitive adhesive layer is formed on a base material, wherein the pressure-sensitive adhesive layer has a chip-shaped workpiece pasting region onto which a chip-shaped workpiece is pasted and a frame pasting region onto which a mount frame is pasted, and that is used by pasting the mount frame to the frame pasting region, wherein the 180-degree peeling adhesive power of the pressure-sensitive adhesive layer to a silicon mirror wafer at the frame pasting region is 5 times or more the 180-degree peeling adhesive power of the pressure-sensitive adhesive layer to a silicon mirror wafer at the chip-shaped workpiece pasting region.
摘要翻译：本发明的目的在于提供一种用于保持芯片的带状物，其使得片状工件的粘贴和剥离变得容易。用于保持具有在基材上形成压敏粘合剂层的构造的芯片的胶带，其中粘合剂层具有将片状工件粘贴到其上的切屑状工件粘贴区域以及粘贴安装框架的框架粘贴区域，并且通过将安装框架粘贴到框架粘贴区域来使用，其中压敏粘合剂层的180度剥离粘合力到硅镜晶片框状粘贴区域是片状工件粘贴区域的粘合剂层向硅镜面晶片的180度剥离粘合力的5倍以上。

2. 发明申请

US20120070960A1 DICING DIE BOND FILM, METHOD OF MANUFACTURING DICING DIE BOND FILM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：定影胶带，制造方法和制造半导体器件的方法
公开(公告)号：US20120070960A1
公开(公告)日：2012-03-22
申请号：US13237548
申请日：2011-09-20
申请人： Shuhei MURATA , Takeshi MATSUMURA , Yuichiro YANAGI
发明人： Shuhei MURATA , Takeshi MATSUMURA , Yuichiro YANAGI
IPC分类号： H01L21/78 , B32B37/02 , B32B37/14 , B32B37/06 , B32B7/12 , B32B37/12
CPC分类号： C09J133/14 , C09J7/385 , C09J2203/326 , C09J2205/31 , H01L2224/48091 , H01L2224/73265 , H01L2224/83191 , H01L2924/181 , Y10T428/2809 , H01L2924/00014 , H01L2924/00012
摘要： The present invention aims to provide a dicing die bond film that is capable of suppressing peeling of the dicing die bond film from a dicing ring. The present invention provides a dicing die bond film in which the pressure-sensitive adhesive layer contains a polymer formed by performing an addition reaction on a specific acrylic polymer with a specific isocyanate compound, and a specific crosslinking agent, and the specific peeling adhesive power of a portion of the pressure-sensitive adhesive layer where the dicing ring is pasted is 1.0 N/20 mm tape width or more and 10.0 N/20 mm tape width or less, the tensile storage modulus at 23° C. of the portion where the dicing ring is pasted is 0.05 MPa or more and less than 0.4 MPa, and the die bond film is pasted to the pressure-sensitive adhesive layer after irradiation with an ultraviolet ray.
摘要翻译：本发明的目的在于提供一种能够抑制切割晶片接合薄膜从切割环剥离的切割模片接合薄膜。本发明提供一种切割模片接合膜，其中压敏粘合剂层含有通过特定的丙烯酸类聚合物与特定的异氰酸酯化合物和特定的交联剂进行加成反应形成的聚合物，并且具体的剥离粘合力粘贴有切割环的粘合剂层的一部分为1.0N / 20mm带宽度和10.0N / 20mm带宽度以下，23℃下的拉伸储能模量为切割环的粘贴量为0.05MPa以上且小于0.4MPa，并且在用紫外线照射之后将模片接合膜粘贴到压敏粘合剂层。

3. 发明申请

US20120003470A1 ACTIVE ENERGY RAY-CURABLE PRESSURE-SENSITIVE ADHESIVE FOR RE-RELEASE AND DICING DIE-BONDING FILM 审中-公开
标题翻译：活性能量可固化压敏粘合剂用于再剥离和定影胶带
公开(公告)号：US20120003470A1
公开(公告)日：2012-01-05
申请号：US13176205
申请日：2011-07-05
申请人： Katsuhiko KAMIYA , Tomokazu TAKAHASHI , Chie KITANO , Mika OKADA , Takeshi MATSUMURA , Shuhei MURATA , Hironao OTAKE , Masatsugu KOSO
发明人： Katsuhiko KAMIYA , Tomokazu TAKAHASHI , Chie KITANO , Mika OKADA , Takeshi MATSUMURA , Shuhei MURATA , Hironao OTAKE , Masatsugu KOSO
IPC分类号： B32B7/12 , C08F8/30
CPC分类号： H01L21/6836 , C08F299/00 , C09J7/38 , C09J163/00 , H01L21/67132 , H01L23/3121 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L25/0657 , H01L25/50 , H01L2221/68318 , H01L2221/68327 , H01L2221/68381 , H01L2221/68386 , H01L2224/27334 , H01L2224/2908 , H01L2224/29082 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/29386 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48105 , H01L2224/48225 , H01L2224/48227 , H01L2224/48245 , H01L2224/48247 , H01L2224/73265 , H01L2224/8385 , H01L2224/83862 , H01L2224/85 , H01L2224/92147 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01057 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/0665 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , Y10T428/2848 , Y10T428/287 , Y10T428/2878 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Provided is an active energy ray-curable pressure-sensitive adhesive for re-release, which has a small influence on an environment or a human body, can be easily handled, can largely change its pressure-sensitive adhesiveness before and after irradiation with an active energy ray, and can express high pressure-sensitive adhesiveness before the irradiation with the active energy ray and express high releasability after the irradiation with the active energy ray. The active energy ray-curable pressure-sensitive adhesive for re-release includes an active energy ray-curable polymer (P), in which the polymer (P) includes one of a polymer obtained by causing a carboxyl group-containing polymer (P3) and an oxazoline group-containing monomer (m3) to react with each other, and a polymer obtained by causing an oxazoline group-containing polymer (P4) and a carboxyl group-containing monomer (m2) to react with each other.
摘要翻译：本发明提供一种能够容易地处理对环境或人体影响小的再生用活性能量射线固化型压敏粘合剂，能够在活性物质照射前后大幅度地改变其压敏粘合性能量射线，并且可以在用活性能量射线照射之前表现出高压敏粘合性，并且在用活性能量射线照射之后表现出高释放性。用于再释放的活性能量射线固化型压敏粘合剂包括活性能量射线固化性聚合物（P），其中聚合物（P）包含通过使含羧基的聚合物（P3）得到的聚合物之一，和含恶唑啉基的单体（m3）进行反应，以及使含恶唑啉基的聚合物（P4）和含羧基的单体（m2）相互反应而得到的聚合物。

4. 发明申请

US20100129974A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE CIRCUIT DEVICE 有权
标题翻译：制造半导体集成电路装置电路装置的方法
公开(公告)号：US20100129974A1
公开(公告)日：2010-05-27
申请号：US12622524
申请日：2009-11-20
申请人： Takuya FUTASE , Shuhei MURATA , Takeshi HAYASHI
发明人： Takuya FUTASE , Shuhei MURATA , Takeshi HAYASHI
IPC分类号： H01L21/336
CPC分类号： H01L21/67167 , H01L21/823807 , H01L21/823814 , H01L21/823835 , H01L29/7843
摘要： When a natural oxide film is left at the interface between a metal silicide layer and a silicon nitride film, in various heating steps (steps involving heating of a semiconductor substrate, such as various insulation film and conductive film deposition steps) after deposition of the silicon nitride film, the metal silicide layer partially abnormally grows due to oxygen of the natural oxide film occurring on the metal silicide layer surface. A substantially non-bias (including low bias) plasma treatment is performed in a gas atmosphere containing an inert gas as a main component on the top surface of a metal silicide film of nickel silicide or the like over source/drain of a field-effect transistor forming an integrated circuit. Then, a silicon nitride film serving as an etching stop film of a contact process is deposited. As a result, without causing undesirable cutting of the metal silicide film, the natural oxide film over the top surface of the metal silicide film can be removed.
摘要翻译：在金属硅化物层和氮化硅膜之间的界面处留有自然氧化物膜时，在各种加热步骤（包括加热半导体衬底，诸如各种绝缘膜和导电膜沉积步骤的步骤）之后，沉积硅由于在金属硅化物层表面上发生的自然氧化膜的氧，金属硅化物层部分地异常生长。基于非偏置（包括低偏压）等离子体处理在含有惰性气体作为主要成分的气体气氛中，在场效应源极/漏极上的硅化镍等的金属硅化物膜的顶表面上进行晶体管形成集成电路。然后，沉积作为接触处理的蚀刻停止膜的氮化硅膜。结果，不会导致金属硅化物膜的不期望的切割，可以去除金属硅化物膜的顶表面上方的自然氧化膜。

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