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    • 4. 发明申请
    • METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
CIRCUIT DEVICE
    • 制造半导体集成电路装置电路装置的方法
    • US20100129974A1
    • 2010-05-27
    • US12622524
    • 2009-11-20
    • Takuya FUTASEShuhei MURATATakeshi HAYASHI
    • Takuya FUTASEShuhei MURATATakeshi HAYASHI
    • H01L21/336
    • H01L21/67167H01L21/823807H01L21/823814H01L21/823835H01L29/7843
    • When a natural oxide film is left at the interface between a metal silicide layer and a silicon nitride film, in various heating steps (steps involving heating of a semiconductor substrate, such as various insulation film and conductive film deposition steps) after deposition of the silicon nitride film, the metal silicide layer partially abnormally grows due to oxygen of the natural oxide film occurring on the metal silicide layer surface. A substantially non-bias (including low bias) plasma treatment is performed in a gas atmosphere containing an inert gas as a main component on the top surface of a metal silicide film of nickel silicide or the like over source/drain of a field-effect transistor forming an integrated circuit. Then, a silicon nitride film serving as an etching stop film of a contact process is deposited. As a result, without causing undesirable cutting of the metal silicide film, the natural oxide film over the top surface of the metal silicide film can be removed.
    • 在金属硅化物层和氮化硅膜之间的界面处留有自然氧化物膜时,在各种加热步骤(包括加热半导体衬底,诸如各种绝缘膜和导电膜沉积步骤的步骤)之后,沉积硅 由于在金属硅化物层表面上发生的自然氧化膜的氧,金属硅化物层部分地异常生长。 基于非偏置(包括低偏压)等离子体处理在含有惰性气体作为主要成分的气体气氛中,在场效应源极/漏极上的硅化镍等的金属硅化物膜的顶表面上进行 晶体管形成集成电路。 然后,沉积作为接触处理的蚀刻停止膜的氮化硅膜。 结果,不会导致金属硅化物膜的不期望的切割,可以去除金属硅化物膜的顶表面上方的自然氧化膜。