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1. 发明授权

US06905984B2 MEMS based contact conductivity electrostatic chuck 失效
标题翻译：基于MEMS的接触导电静电卡盘
公开(公告)号：US06905984B2
公开(公告)日：2005-06-14
申请号：US10683679
申请日：2003-10-10
申请人： Peter L. Kellerman , Shu Qin , Ernie Allen , Douglas A. Brown
发明人： Peter L. Kellerman , Shu Qin , Ernie Allen , Douglas A. Brown
IPC分类号： H01L21/683 , H01L21/00
CPC分类号： H01L21/6831 , Y10S438/964
摘要： The present invention is directed to a method for clamping and processing a semiconductor substrate using a semiconductor processing apparatus. According to one aspect of the present invention, a multi-polar electrostatic chuck and associated method is disclosed which provides heating or cooling of a substrate by thermal contact conduction between the electrostatic chuck and the substrate. The multi-polar electrostatic chuck includes a semiconductor platform having a plurality of protrusions that define gaps therebetween, wherein a surface roughness of the plurality of protrusions is less than 100 Angstroms. The electrostatic chuck further includes a voltage control system operable to control a voltage applied to the electrostatic chuck to thus control a contact heat transfer coefficient of the electrostatic chuck, wherein the heat transfer coefficient of the electrostatic chuck is primarily a function of a contact pressure between the substrate and the plurality of protrusions.
摘要翻译：本发明涉及使用半导体处理装置夹持和处理半导体衬底的方法。根据本发明的一个方面，公开了一种多极静电卡盘和相关方法，其通过静电卡盘和基板之间的热接触传导来提供加热或冷却基板。多极静电卡盘包括具有多个突起的半导体平台，所述突起在其间形成间隙，其中多个突起的表面粗糙度小于100埃。静电卡盘还包括电压控制系统，其可操作以控制施加到静电卡盘的电压，从而控制静电卡盘的接触传热系数，其中静电卡盘的传热系数主要是介于静电卡盘之间的接触压力的函数基板和多个突起。

2. 发明授权

US07072166B2 Clamping and de-clamping semiconductor wafers on a J-R electrostatic chuck having a micromachined surface by using force delay in applying a single-phase square wave AC clamping voltage 有权
标题翻译：在具有微加工表面的J-R静电卡盘上夹紧和去夹紧半导体晶片，通过在施加单相方波交流钳位电压时使用力延迟
公开(公告)号：US07072166B2
公开(公告)日：2006-07-04
申请号：US10661180
申请日：2003-09-12
申请人： Shu Qin , Peter L. Kellerman
发明人： Shu Qin , Peter L. Kellerman
IPC分类号： H01H1/00
CPC分类号： H01L21/6833
摘要： The present invention is directed to a method and a system for clamping a wafer to a J-R electrostatic chuck using a single-phase square wave AC clamping voltage. The method comprises determining a single-phase square wave clamping voltage for the J-R electrostatic chuck, wherein the determination is based, at least in part, on a minimum residual clamping force associated with the wafer and the electrostatic chuck and a surface topography of a leaky dielectric layer associated therewith. The wafer is placed on the electrostatic chuck; and the determined clamping voltage is applied to the electrostatic chuck, therein electrostatically clamping the wafer to the electrostatic chuck, wherein at least the minimum residual clamping force is maintained during a polarity switch of the single-phase square wave clamping voltage. The determination of the surface topography comprises a first gap and a second gap between the wafer and the electrostatic chuck and an island area ratio, wherein a difference in RC time constants associated with the respective first gap and second gap is provided such that at least the minimum residual clamping force is maintained during the polarity switch. Upon removal of the square wave clamping voltage, the de-clamping time is substantially reduced, and corresponds to the pulse width of the square wave clamping voltage.
摘要翻译：本发明涉及一种使用单相方波交流钳位电压将晶片夹持到J-R静电卡盘的方法和系统。该方法包括确定用于JR静电卡盘的单相方波钳位电压，其中所述确定至少部分地基于与晶片和静电卡盘相关联的最小剩余夹持力和泄漏的表面形貌与之相关的电介质层。将晶片放置在静电卡盘上; 并且将确定的钳位电压施加到静电卡盘，其中将晶片静电夹持到静电卡盘，其中在单相方波钳位电压的极性开关期间至少保持最小的剩余钳位力。表面形貌的确定包括晶片和静电卡盘之间的第一间隙和第二间隙以及岛面积比，其中提供与相应的第一间隙和第二间隙相关联的RC时间常数的差异，使得至少在极性开关期间维持最小的剩余夹紧力。在去除方波钳位电压时，去夹紧时间大大降低，并且对应于方波钳位电压的脉冲宽度。

3. 发明授权

US07072165B2 MEMS based multi-polar electrostatic chuck 失效
标题翻译：基于MEMS的多极静电卡盘
公开(公告)号：US07072165B2
公开(公告)日：2006-07-04
申请号：US10642939
申请日：2003-08-18
申请人： Peter L. Kellerman , Shu Qin , Douglas A. Brown
发明人： Peter L. Kellerman , Shu Qin , Douglas A. Brown
IPC分类号： H01L21/683
CPC分类号： H01L21/6875 , H01L21/6833
摘要： The present invention is directed to a semiconductor processing apparatus and a method for clamping a semiconductor substrate and controlling a heat transfer associated therewith. According to one aspect of the present invention, a multi-polar electrostatic chuck and associated method is disclosed which provides a controlled and uniform heat transfer coefficient across a surface thereof. The multi-polar electrostatic chuck comprises a semiconductor platform having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps is uniform and associated with a mean free path of the cooling gas therein. The electrostatic chuck is permits a control of a backside pressure of a cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas. The plurality of protrusions further provide a uniform contact surface, wherein a contact conductivity between the plurality of protrusions and the substrate is controllable and significantly uniform across the substrate.
摘要翻译：本发明涉及一种用于夹持半导体衬底并控制与之相关的热传递的半导体处理装置和方法。根据本发明的一个方面，公开了一种多极静电卡盘和相关方法，其提供跨越其表面的受控且均匀的传热系数。多极静电卡盘包括具有限定间隙的多个突起的半导体平台，其中间隙的距离或深度是均匀的，并且与其中的冷却气体的平均自由路径相关联。静电吸盘可以控制多个间隙内的冷却气体的背侧压力，从而控制冷却气体的传热系数。多个突起还提供均匀的接触表面，其中多个突起和基底之间的接触导电性在基底上是可控的和显着均匀的。

4. 发明授权

US06947274B2 Clamping and de-clamping semiconductor wafers on an electrostatic chuck using wafer inertial confinement by applying a single-phase square wave AC clamping voltage 失效
标题翻译：通过施加单相方波交流钳位电压，使用晶片惯性约束将静电卡盘上的半导体晶片夹紧和去夹紧
公开(公告)号：US06947274B2
公开(公告)日：2005-09-20
申请号：US10657449
申请日：2003-09-08
申请人： Peter L. Kellerman , Shu Qin , William F. DiVergilio
发明人： Peter L. Kellerman , Shu Qin , William F. DiVergilio
IPC分类号： H01L21/683 , H02N13/00 , H01F13/02
CPC分类号： H01L21/6833 , H02N13/00
摘要： The present invention is directed to a method for clamping a wafer to an electrostatic chuck using a single-phase square wave AC clamping voltage. The method comprises determining a single-phase square wave clamping voltage for the electrostatic chuck, wherein the determination is based, at least in part, on an inertial response time of the wafer. The wafer is placed on the electrostatic chuck, wherein a gap between the electrostatic chuck and the wafer is defined. The determined single-phase square wave clamping voltage is then applied, wherein the wafer is generally clamped to the electrostatic chuck within a predetermined distance, while an amount of electrostatic charge is generally not allowed to accumulate, thereby enabling a fast de-clamping of the wafer.
摘要翻译：本发明涉及使用单相方波交流钳位电压将晶片夹持到静电卡盘的方法。该方法包括确定用于静电卡盘的单相方波钳位电压，其中所述确定至少部分地基于晶片的惯性响应时间。将晶片放置在静电卡盘上，其中定义静电卡盘和晶片之间的间隙。然后施加确定的单相方波钳位电压，其中晶片通常在预定距离内被夹持在静电卡盘上，而静电电荷的量通常不允许累积，从而使得能够快速地去夹紧晶圆。

5. 发明授权

US06946403B2 Method of making a MEMS electrostatic chuck 失效
标题翻译：制造MEMS静电卡盘的方法
公开(公告)号：US06946403B2
公开(公告)日：2005-09-20
申请号：US10695153
申请日：2003-10-28
申请人： Peter L. Kellerman , Shu Qin , Ernie Allen , Douglas A. Brown
发明人： Peter L. Kellerman , Shu Qin , Ernie Allen , Douglas A. Brown
IPC分类号： H01L21/683 , H01L21/469
CPC分类号： H01L21/6833
摘要： The present invention is directed to a method of forming a clamping plate for a multi-polar electrostatic chuck. The method comprises forming a first electrically conductive layer over a semiconductor platform and defining a plurality of portions of the first electrically conductive layer which are electrically isolated from one another. A first electrically insulative layer is formed over the first electrically conductive layer, the first electrically insulative layer comprising a top surface having a plurality of MEMS protrusions extending a first distance therefrom. A plurality of poles are furthermore electrically connected to the respective plurality of portions of the first electrically conductive layer, wherein a voltage applied between the plurality of poles is operable to induce an electrostatic force in the clamping plate.
摘要翻译：本发明涉及一种形成多极静电卡盘夹紧板的方法。该方法包括在半导体平台上形成第一导电层，并且限定彼此电隔离的第一导电层的多个部分。第一电绝缘层形成在第一导电层之上，第一电绝缘层包括具有从其延伸第一距离的多个MEMS突起的顶表面。多个极还电连接到第一导电层的相应多个部分，其中施加在多个极之间的电压可操作以在夹持板中引起静电力。

6. 发明授权

US08475591B2 Method of controlling a thickness of a sheet formed from a melt 有权
标题翻译：控制由熔体形成的片材的厚度的方法
公开(公告)号：US08475591B2
公开(公告)日：2013-07-02
申请号：US12539125
申请日：2009-08-11
申请人： Peter L. Kellerman , Fredrick Carlson , Frank Sinclair
发明人： Peter L. Kellerman , Fredrick Carlson , Frank Sinclair
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B11/001 , C30B11/003 , C30B28/06 , C30B29/403 , C30B29/406 , C30B29/52 , C30B29/64 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10T117/1024
摘要： A method and apparatus for forming a sheet are disclosed. A melt is cooled and a sheet is formed on the melt. This sheet has a first thickness. The sheet is then thinned from the first thickness to a second thickness using, for example, a heater or the melt. The cooling may be configured to allow solutes to be trapped in a region of the sheet and this particular sheet may be thinned and the solutes removed. The melt may be, for example, silicon, silicon and germanium, gallium, or gallium nitride.
摘要翻译：公开了一种用于形成片材的方法和装置。将熔体冷却并在熔体上形成片材。该片材具有第一厚度。然后使用例如加热器或熔体将片材从第一厚度变薄至第二厚度。冷却可以被配置为允许溶质被捕获在片材的区域中，并且该特定片材可以变薄并且去除溶质。熔体可以是例如硅，硅和锗，镓或氮化镓。

7. 发明申请

US20110271901A1 REMOVAL OF A SHEET FROM A PRODUCTION APPARATUS 有权
标题翻译：从生产设备中取出一张纸
公开(公告)号：US20110271901A1
公开(公告)日：2011-11-10
申请号：US13187039
申请日：2011-07-20
申请人： Peter L. Kellerman , Frederick Carlson , Frank Sinclair
发明人： Peter L. Kellerman , Frederick Carlson , Frank Sinclair
IPC分类号： C30B35/00 , C30B15/06 , C30B11/02
CPC分类号： C30B11/003 , C30B11/001 , C30B28/06 , C30B29/02 , C30B29/06 , C30B29/08 , C30B29/403 , C30B29/64 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10S588/90 , Y10T117/1024 , Y10T117/1092
摘要： A melt of a material is cooled and a sheet of the material is formed in the melt. This sheet is transported, cut into at least one segment, and cooled in a cooling chamber. The material may be Si, Si and Ge, Ga, or GaN. The cooling is configured to prevent stress or strain to the segment. In one instance, the cooling chamber has gas cooling.
摘要翻译：将材料的熔体冷却，并在熔体中形成一片材料。将该片材运输，切割成至少一个片段，并在冷却室中冷却。该材料可以是Si，Si和Ge，Ga或GaN。冷却配置为防止应力或应变。在一种情况下，冷却室具有气体冷却。

8. 发明申请

US20110271899A1 REMOVING A SHEET FROM THE SURFACE OF A MELT USING GAS JETS 有权
标题翻译：从使用气体喷嘴的熔体表面去除表面
公开(公告)号：US20110271899A1
公开(公告)日：2011-11-10
申请号：US13037789
申请日：2011-03-01
申请人： Peter L. Kellerman , Gregory D. Thronson , Dawei Sun
发明人： Peter L. Kellerman , Gregory D. Thronson , Dawei Sun
IPC分类号： C30B15/06 , C30B11/02
CPC分类号： C30B35/00 , C30B9/00 , C30B11/00 , C30B15/00 , C30B15/002 , C30B15/06 , C30B15/22 , C30B15/24 , C30B15/34 , C30B28/10 , C30B29/06 , C30B29/52 , C30B29/64 , Y10T117/1048 , Y10T117/1092
摘要： In one embodiment, a sheet production apparatus comprises a vessel configured to hold a melt of a material. A cooling plate is disposed proximate the melt and is configured to form a sheet of the material on the melt. A first gas jet is configured to direct a gas toward an edge of the vessel. A sheet of a material is translated horizontally on a surface of the melt and the sheet is removed from the melt. The first gas jet may be directed at the meniscus and may stabilize this meniscus or increase local pressure within the meniscus.
摘要翻译：在一个实施例中，片材生产设备包括构造成容纳材料的熔体的容器。冷却板靠近熔体设置并且被配置成在熔体上形成材料片。第一气体喷射器构造成将气体引向容器的边缘。一片材料在熔体的表面上水平地平移，并且片材从熔体中移除。第一气体射流可以指向弯月面并且可以稳定该弯液面或增加弯液面内的局部压力。

9. 发明授权

US07855087B2 Floating sheet production apparatus and method 有权
标题翻译：浮板生产设备及方法
公开(公告)号：US07855087B2
公开(公告)日：2010-12-21
申请号：US12403206
申请日：2009-03-12
申请人： Peter L. Kellerman , Frank Sinclair
发明人： Peter L. Kellerman , Frank Sinclair
IPC分类号： H01L21/00
CPC分类号： H01L31/02 , C30B15/06 , C30B15/14 , C30B15/30 , C30B28/10 , C30B29/06
摘要： This sheet production apparatus comprises a vessel defining a channel configured to hold a melt. The melt is configured to flow from a first point to a second point of the channel. A cooling plate is disposed proximate the melt and is configured to form a sheet on the melt. A spillway is disposed at the second point of the channel. This spillway is configured to separate the sheet from the melt.
摘要翻译：该片材生产设备包括限定被配置为保持熔体的通道的容器。熔体构造成从通道的第一点流到第二点。冷却板靠近熔体设置并且被配置成在熔体上形成片材。溢流道设置在通道的第二点。该溢流道构造成将片材与熔体分离。

10. 发明授权

US07675047B2 Technique for shaping a ribbon-shaped ion beam 有权
标题翻译：用于成形带状离子束的技术
公开(公告)号：US07675047B2
公开(公告)日：2010-03-09
申请号：US11536992
申请日：2006-09-29
申请人： Svetlana B. Radovanov , Peter L. Kellerman , Victor M. Benveniste , Robert C. Lindberg , Kenneth H. Purser , Tyler B. Rockwell , James S. Buff , Anthony Renau
发明人： Svetlana B. Radovanov , Peter L. Kellerman , Victor M. Benveniste , Robert C. Lindberg , Kenneth H. Purser , Tyler B. Rockwell , James S. Buff , Anthony Renau
IPC分类号： H01J37/10 , H01J37/317
CPC分类号： H01J37/12 , H01J37/3007 , H01J37/3171 , H01J2237/083 , H01J2237/121
摘要： A technique for shaping a ribbon-shaped ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for shaping a ribbon-shaped ion beam. The apparatus may comprise an electrostatic lens having a substantially rectangular aperture for a ribbon-shaped ion beam to pass through, wherein a plurality of focusing elements are positioned along short edges of the aperture, and wherein each focusing element is separately biased and oriented to shape the ribbon-shaped ion beam.
摘要翻译：公开了一种用于成形带状离子束的技术。在一个特定的示例性实施例中，该技术可以被实现为用于成形带状离子束的装置。该设备可以包括具有用于带状离子束通过的基本上矩形的孔的静电透镜，其中多个聚焦元件沿着孔的短边缘定位，并且其中每个聚焦元件被单独偏置并定向成形带状离子束。

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