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1. 发明申请

US20050064326A1 Positive resist composition and pattern-forming method using the same 有权
标题翻译：正型抗蚀剂组合物和使用其的图案形成方法
公开(公告)号：US20050064326A1
公开(公告)日：2005-03-24
申请号：US10941822
申请日：2004-09-16
申请人： Shoichiro Yasunami , Kenji Wada , Kunihiko Kodama , Kenichiro Sato
发明人： Shoichiro Yasunami , Kenji Wada , Kunihiko Kodama , Kenichiro Sato
IPC分类号： G03F7/004 , G03C1/76 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： A positive resist composition includes: (A) a resin capable of increasing a solubility thereof in an alkali developer by an action of an acid; (B) a compound capable of generating a sulfonic acid represented by the following formula (I) upon irradiation with one of an actinic ray and a radiation; and (C1) at least one of an amine compound having at least an aliphatic hydroxyl group in a molecule and an amine compound having at least an ether bond in a molecule: A1A2—SO3H)n (I) wherein A1 represents an n-valent linking group, A2 represents a single bond or a divalent aliphatic group, and A2's each may be the same or different, provided that at least one group represented by A1 or A2 contains a fluorine atom, and n represents an integer of from 2 to 4.
摘要翻译：正型抗蚀剂组合物包括：（A）能够通过酸的作用增加其在碱性显影剂中的溶解度的树脂; （B）在用光化学射线和辐射之一照射时能够产生由下式（I）表示的磺酸的化合物; 和（C1）分子中至少具有脂肪族羟基的胺化合物和分子中至少具有醚键的胺化合物中的至少一种：A1和Parenopenst; A2-SO3H）n（I）其中A1表示n 连接基团，A2表示单键或二价脂族基团，并且A2可以相同或不同，条件是由A1或A2表示的至少一个基团含有氟原子，n表示2的整数到4。

2. 发明授权

US07351515B2 Positive resist composition and pattern-forming method using the same 有权
标题翻译：正型抗蚀剂组合物和使用其的图案形成方法
公开(公告)号：US07351515B2
公开(公告)日：2008-04-01
申请号：US10941822
申请日：2004-09-16
申请人： Shoichiro Yasunami , Kenji Wada , Kunihiko Kodama , Kenichiro Sato
发明人： Shoichiro Yasunami , Kenji Wada , Kunihiko Kodama , Kenichiro Sato
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： A positive resist composition includes: (A) a resin capable of increasing a solubility thereof in an alkali developer by an action of an acid; (B) a compound capable of generating a sulfonic acid represented by the following formula (I) upon irradiation with one of an actinic ray and a radiation; and (C1) at least one of an amine compound having at least an aliphatic hydroxyl group in a molecule and an amine compound having at least an ether bond in a molecule: A1A2-SO3H)n (I) wherein A1 represents an n-valent linking group, A2 represents a single bond or a divalent aliphatic group, and A2's each may be the same or different, provided that at least one group represented by A1 or A2 contains a fluorine atom, and n represents an integer of from 2 to 4.
摘要翻译：正型抗蚀剂组合物包括：（A）能够通过酸的作用增加其在碱性显影剂中的溶解度的树脂; （B）在用光化学射线和辐射之一照射时能够产生由下式（I）表示的磺酸的化合物; 和（C1）分子中至少具有脂肪族羟基的胺化合物和分子中具有至少一个醚键的胺化合物中的至少一种：＆lt;线内配方说明=“在线式” end =“lead”？> A _{1 A 2 3 （I）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中A 1代表n价连接基团，A < SUB 2表示单键或二价脂族基团，并且A 2各自可以相同或不同，条件是至少一个由A 1表示的基团或A 2 含有氟原子，n表示2〜4的整数。}

3. 发明授权

US06696219B2 Positive resist laminate 有权
标题翻译：正抗蚀层压板
公开(公告)号：US06696219B2
公开(公告)日：2004-02-24
申请号：US09880030
申请日：2001-06-14
申请人： Shoichiro Yasunami , Kenichiro Sato
发明人： Shoichiro Yasunami , Kenichiro Sato
IPC分类号： G03F711
CPC分类号： G03F7/0758 , G03F7/0045 , G03F7/094
摘要： A positive resist laminate which comprises a substrate, a first resist layer and a second resist layer, wherein the first resist layer is to be a heat-hardening layer and comprises (a-1) a polymer containing an alicyclic skeleton in the side chain thereof, and the second resist layer comprises: (b) a polymer which contains a silicon atom in the side chain thereof and which is insoluble in water and becomes soluble in an aqueous alkali solution by the action of an acid; and (c) a compound which generates an acid upon irradiation with an actinic ray or radiation.
摘要翻译：一种正性抗蚀剂层叠体，其包含基材，第一抗蚀剂层和第二抗蚀剂层，其中所述第一抗蚀剂层为热硬化层，其包含（a-1）侧链中含有脂环族骨架的聚合物第二抗蚀剂层包括：（b）在侧链中含有硅原子并且不溶于水并通过酸的作用而溶于碱性水溶液中的聚合物; 和（c）在用光化射线或辐射照射时产生酸的化合物。

4. 发明授权

US06589705B1 Positive-working photoresist composition 失效
标题翻译：正光刻胶组合物
公开(公告)号：US06589705B1
公开(公告)日：2003-07-08
申请号：US09698190
申请日：2000-10-30
申请人： Kenichiro Sato , Kazuyoshi Mizutani , Shoichiro Yasunami
发明人： Kenichiro Sato , Kazuyoshi Mizutani , Shoichiro Yasunami
IPC分类号： G03C172
CPC分类号： G03F7/0758 , G03F7/0045 , G03F7/0048
摘要： A positive-working photoresist composition comprises (A) a resin comprising the specific repeating structural units which resin increases in its solubility in an alkaline developer when acted upon by an acid, (B′) an onium salt compound which generates an acid when irradiated with active ray or radiation and (C) at least one of fluorine-based and/or silicon-based surface active agent and nonionic surface active agent or a positive-working photoresist composition comprises (A) a resin comprising the specific repeating structural units which resin increases in its solubility in an alkaline developer when acted upon by an acid, (B) a compound which generates an acid when irradiated with active ray or radiation, and (D) a mixed solvent containing at least one propylene glycol monoalkyl ether carboxylate and at least one of solvents selected from the group consisting of propylene glycol monoalkyl ether, alkyl lactate and alkoxyalkyl propionate and solvents selected from the group consisting of &ggr;-butyrolactone, ethylene carbonate and propylene carbonate.
摘要翻译：正性光致抗蚀剂组合物包含（A）包含特定重复结构单元的树脂，当被酸作用时树脂在碱性显影剂中的溶解度增加，（B'）当照射时产生酸的鎓盐化合物活性射线或辐射，和（C）氟基和/或硅基表面活性剂和非离子表面活性剂或正性光致抗蚀剂组合物中的至少一种包含（A）包含特定重复结构单元的树脂，该树脂（B）当用活性射线或辐射照射时产生酸的化合物，和（D）含有至少一种丙二醇单烷基醚羧酸酯的混合溶剂，和选自丙二醇单烷基醚，乳酸烷基酯和丙酸烷氧基烷基酯中的至少一种溶剂和选自以下的溶剂：的γ-丁内酯，碳酸亚乙酯和碳酸亚丙酯。

5. 发明授权

US07122589B2 Positive resist composition and pattern formation method using the same 有权
标题翻译：正型抗蚀剂组成和使用其的图案形成方法
公开(公告)号：US07122589B2
公开(公告)日：2006-10-17
申请号：US10669603
申请日：2003-09-25
申请人： Fumiyuki Nishiyama , Kenichiro Sato , Kunihiko Kodama
发明人： Fumiyuki Nishiyama , Kenichiro Sato , Kunihiko Kodama
IPC分类号： C08K5/36
CPC分类号： G03F7/0397 , C08K5/45 , G03F7/0045 , H01L21/312 , Y10S430/106 , Y10S430/122
摘要： A positive resist composition comprising: (A) a resin having alicyclic hydrocarbon groups in side chains, containing specified two types of repeating units, which increases the solubility in an alkali developing solution by the action of an acid; and (B) a particular sulfonium compound having a specified structure and capable of generating an acid upon irradiation with an actinic ray or radiation.
摘要翻译：一种正型抗蚀剂组合物，其包含：（A）在侧链中具有脂环族烃基的树脂，其含有特定的两种重复单元，其通过酸的作用增加在碱性显影液中的溶解度; 和（B）具有特定结构并且能够在用光化射线或辐射照射时产生酸的特定锍化合物。

6. 发明授权

US06670095B2 Positive-working resist composition 有权
公开(公告)号：US06670095B2
公开(公告)日：2003-12-30
申请号：US10022363
申请日：2001-12-20
申请人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai
发明人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai
IPC分类号： G03F7004
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： The present invention provides a high sensitivity chemically amplified positive-working resist composition which eliminates edge roughness on pattern and provides an excellent resist pattern profile. A novel positive-working resist composition is provided comprising (A) a resin containing an alkali-soluble group protected by at least one of moieties containing alicyclic hydrocarbon represented by general formulae (pI) to (pVI) and having a monomer component content of 5% or less of the total pattern area as determined by gel permeation chromatography (GPC), which increases in its solution velocity with respect to an alkaline developer by the action of an acid and (B) a compound which is capable of generating an acid by irradiation with an active ray or radiation.

7. 发明授权

US5667932A Positive photoresist composition 失效
标题翻译：正光致抗蚀剂组合物
公开(公告)号：US5667932A
公开(公告)日：1997-09-16
申请号：US651849
申请日：1996-05-21
申请人： Kenichiro Sato , Kunihiko Kodama , Makoto Momota
发明人： Kenichiro Sato , Kunihiko Kodama , Makoto Momota
IPC分类号： G03F7/023 , G03F7/022 , H01L21/027
CPC分类号： G03F7/022
摘要： Disclosed is a positive photoresist composition comprising an alkali-soluble resin and 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic esters of a polyhydroxy compound having a particular structure consisting of 5 aromatic rings linked linearly, in which each of the aromatic rings contains a hydroxyl group and the respective aromatic rings next to both the terminal rings contains a substituent group at the 5-position to the hydroxyl group thereof. The positive photoresist composition which has high resolution, low dependence of the resolution on film thickness, and broad latitude of development, leaves little development residue, and has very excellent storage stability without separation of photosensitive materials and generation of microgel (no increase in particle) with a lapse of time.
摘要翻译：公开了一种正型光致抗蚀剂组合物，其包含碱溶性树脂和具有由5个直链连接的芳环组成的特定结构的多羟基化合物的1,2-萘醌二叠氮化物-5-（和/或-4-）磺酸酯，其中每个的芳环包含羟基，并且在两个末端环旁边的相应芳香环在其羟基的5位含有取代基。具有高分辨率，低分辨率对膜厚度的依赖性低，开发宽阔的正光致抗蚀剂组合物几乎没有开发残留物，并且具有非常优异的储存稳定性，而不会分离感光材料和产生微凝胶（不增加颗粒）随着时间的推移

8. 发明授权

US06602646B1 Positive-working resist composition 有权
标题翻译：正面抗蚀剂组成
公开(公告)号：US06602646B1
公开(公告)日：2003-08-05
申请号：US09684888
申请日：2000-10-06
申请人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai
发明人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai
IPC分类号： G03F7004
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： The present invention provides a high sensitivity chemically amplified positive-working resist composition which eliminates edge roughness on pattern and provides an excellent resist pattern profile. A novel positive-working resist composition is provided comprising (A) a resin containing an alkali-soluble group protected by at least one of moieties containing alicyclic hydrocarbon represented by general formulae (pI) to (pVI) and having a monomer component content of 5% or less of the total pattern area as determined by gel permeation chromatography (GPC), which increases in its solution velocity with respect to an alkaline developer by the action of an acid and (B) a compound which is capable of generating an acid by irradiation with an active ray or radiation.
摘要翻译：本发明提供一种消除图案上的边缘粗糙度并提供优异的抗蚀剂图案轮廓的高灵敏度化学放大正性抗蚀剂组合物。提供了一种新型的正性抗蚀剂组合物，其包含（A）含有由至少一个含有由通式（pI）至（pVI）表示的脂环族烃部分并且单体组分含量为5的部分保护的碱溶性基团的树脂通过凝胶渗透色谱法（GPC）确定的总图案面积的百分比或更少，其通过酸的作用相对于碱性显影剂的溶液速度增加，和（B）能够产生酸的化合物用活性射线或辐射照射。

9. 发明授权

US06576392B1 Positive photoresist composition 有权
标题翻译：正光致抗蚀剂组合物
公开(公告)号：US06576392B1
公开(公告)日：2003-06-10
申请号：US09456827
申请日：1999-12-06
申请人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai , Hidekazu Ohashi
发明人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai , Hidekazu Ohashi
IPC分类号： G03C173
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/115
摘要： A positive photoresist composition comprising a photo-acid gererator and a specific resin. The resin contains repeating units each having a group represented by formula (I): —SO2—O—R wherein R represents an optionally substituted alkyl, cycloalkyl, or alkenyl group and comes to have an increased rate of dissolution in an alkaline developing solution by the action of an acid, or contains alkali-soluble groups protected by partial structures containing an alicyclic hydrocarbon and represented by at least one of formulae (pI) to (pVI) defined in the specification and which decomposes by the action of an acid to have enhanced solubility in an alkali. The latter is used in combination with a compound which decomposes by the action of an acid to generate a sulfonic acid.
摘要翻译：一种正型光致抗蚀剂组合物，其包含光酸注射器和特定树脂。树脂含有各自具有由式（I）表示的基团的重复单元：其中R表示任选取代的烷基，环烷基或烯基，并且通过酸的作用使碱显影溶液的溶解速率增加，或含有由说明书中定义的至少一种式（pI）至（pVI）表示的含有脂环族烃的部分结构保护的碱溶性基团，其通过酸的作用而分解，从而具有增强的在碱中的溶解度。后者与通过酸的作用分解以产生磺酸的化合物组合使用。

10. 发明授权

US06517991B1 Positive photosensitive composition 失效
公开(公告)号：US06517991B1
公开(公告)日：2003-02-11
申请号：US09606681
申请日：2000-06-30
申请人： Kunihiko Kodama , Kenichiro Sato , Toshiaki Aoai
发明人： Kunihiko Kodama , Kenichiro Sato , Toshiaki Aoai
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III) as described in the specification or (B-2) a resin having at least one monovalent polyalicyclic group represented by formula (Ib) as described in the specification and a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution. The positive photosensitive composition containing the resin according to the present invention has high transmittance to far ultraviolet light particularly having a wavelength of 220 nm or less and exhibits good dry etching resistance. Further, the positive photosensitive composition exhibits high sensitivity, good resolution and good pattern profile when far ultraviolet light having a wavelength of 250 nm or less, particularly 220 nm or less (especially an ArF excimer laser beam) is employed as an exposure light source, and thus it can be effectively employed for the formation of fine pattern necessary for the production of semiconductor elements.

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