会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Method of forming insulating film, method of manufacturing semiconductor device and their controlling computer program
    • 形成绝缘膜的方法,制造半导体器件的方法及其控制计算机程序
    • US07446061B2
    • 2008-11-04
    • US11633484
    • 2006-12-05
    • Hiroshi SatoRempei NakataYukio NishiyamaTaketo Matsuda
    • Hiroshi SatoRempei NakataYukio NishiyamaTaketo Matsuda
    • H01L21/44H01L21/31
    • H01L21/31612H01J37/321H01L21/02164H01L21/02274H01L21/31625H01L21/76224H01L21/76837
    • A semiconductor substrate with a groove is placed in a plasma generating reaction chamber. Silicon, oxygen and hydrogen containing gases are introduced into the reaction chamber as process gases. A ratio of a gas flow of the hydrogen containing gas except the silicon containing gas to a total gas flow of the silicon containing gas and the oxygen containing gas defines a first gas-flow ratio. A ratio of a gas flow of the oxygen containing gas to that of the silicon containing gas defines a second gas-flow ratio. The first and second gas-flow ratios establish a linear function for a critical condition. A cluster formation condition is set up by relatively increasing the first gas-flow ratio while relatively decreasing the second gas-flow ratio with respect to the critical condition. A cluster suppression condition is also set up by relatively decreasing the first gas-flow ratio while relatively increasing the second gas-flow ratio with respect to the critical condition. The process gases are supplied to the reaction chamber under the cluster formation condition and under the cluster suppression condition, alternately, to form an insulating film buried in the groove.
    • 将具有凹槽的半导体衬底放置在等离子体产生反应室中。 硅,氧和含氢气体作为工艺气体被引入到反应室中。 含硅气体以外的含氢气体的气体流量与含硅气体和含氧气体的总气体流量的比率定义为第一气体流量比。 含氧气体的气体流量与含硅气体的气体流量的比定义第二气体流量比。 第一和第二气体流量比建立了关键条件的线性函数。 通过相对增加第一气体流量比来建立簇形成条件,同时相对于临界条件相对降低第二气体流量比。 通过相对地降低第一气体流量比同时相对于临界条件相对增加第二气体流量比也建立了集束抑制条件。 处理气体在簇形成条件下并在簇抑制条件下交替地供给到反应室,以形成埋在槽中的绝缘膜。