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1. 发明授权

US5258625A Interband single-electron tunnel transistor and integrated circuit 失效
标题翻译：带间单电子隧道晶体管和集成电路
公开(公告)号：US5258625A
公开(公告)日：1993-11-02
申请号：US961547
申请日：1992-10-15
申请人： Shiroo Kamohara , Toru Toyabe , Kozo Katayama , Shuichi Yamamoto , Sigeo Ihara
发明人： Shiroo Kamohara , Toru Toyabe , Kozo Katayama , Shuichi Yamamoto , Sigeo Ihara
IPC分类号： H01L21/82 , H01L21/8232 , H01L21/8244 , H01L27/06 , H01L27/095 , H01L27/10 , H01L27/11 , H01L27/118 , H01L29/66 , H01L29/68 , H01L29/72 , H01L29/762 , H01L29/80 , H01L29/88 , H03K19/02
CPC分类号： B82Y10/00 , B82Y30/00 , H01L27/118 , H01L29/72 , H01L29/762 , H01L29/88 , H03K19/02 , Y10S977/937
摘要： An interband single-electron tunnel transistor utilizes an interband single-electron tunneling phenomenon between a valence band and a conduction band through a p-n junction. The transistor includes the combination of microcapacities as fundamental constituent elements each formed by joining a p-type semiconductor material doped with an impurity in the degree of concentration with which a Fermi level overlaps a valence band and an n-type semiconductor material doped with an impurity in the degree of concentration with which the Fermi level overlaps a conduction band. The microcapacity includes a p-n junction having a junction area with which interband electron tunneling is inhibited due to Coulomb blockade.
摘要翻译：带间单电子隧道晶体管利用通过p-n结的价带和导带之间的带间单电子隧道现象。晶体管包括作为基本构成元件的微电容的组合，其通过将掺杂有杂质的p型半导体材料以费米能级与价带重叠的浓度与掺杂有杂质的n型半导体材料接合而形成在费米能级与导带重叠的浓度下。微容量包括具有结区的p-n结，由于库仑阻挡，带间电子隧道被阻止。

2. 发明授权

US5422496A Interband single-electron tunnel transistor and integrated circuit 失效
标题翻译：带间单电子隧道晶体管和集成电路
公开(公告)号：US5422496A
公开(公告)日：1995-06-06
申请号：US117801
申请日：1993-09-08
申请人： Shiroo Kamohara , Toru Toyabe , Kozo Katayama , Shuichi Yamamoto , Sigeo Ihara
发明人： Shiroo Kamohara , Toru Toyabe , Kozo Katayama , Shuichi Yamamoto , Sigeo Ihara
IPC分类号： H01L21/82 , H01L21/8232 , H01L21/8244 , H01L27/06 , H01L27/095 , H01L27/10 , H01L27/11 , H01L27/118 , H01L29/66 , H01L29/68 , H01L29/72 , H01L29/762 , H01L29/80 , H01L29/88 , H03K19/02
CPC分类号： B82Y10/00 , B82Y30/00 , H01L27/118 , H01L29/72 , H01L29/762 , H01L29/88 , H03K19/02 , Y10S977/937
摘要： An interband single-electron tunnel/transistor utilizes an interband single-electron tunneling phenomenon between a valence band and a conduction band through a p-n junction. The transistor includes the combination of microcapacities as fundamental constituent elements each formed by joining a p-type semiconductor material doped with an impurity in the degree of concentration with which a Fermi level overlaps a valence band and an n-type semiconductor material doped with an impurity in the degree of concentration with which the Fermi level overlaps a conduction band. The microcapacity includes a p-n junction having a junction area with which interband electron tunneling is inhibited due to Coulomb blockade.
摘要翻译：带间单电子隧道/晶体管利用通过p-n结的价带和导带之间的带间单电子隧道现象。晶体管包括作为基本构成元件的微电容的组合，其通过将掺杂有杂质的p型半导体材料以费米能级与价带重叠的浓度与掺杂有杂质的n型半导体材料接合而形成在费米能级与导带重叠的浓度下。微容量包括具有结区的p-n结，由于库仑阻挡，带间电子隧穿被阻止。

3. 发明授权

US5742071A Wiringless logical operation circuits 失效
标题翻译：无线逻辑运算电路
公开(公告)号：US5742071A
公开(公告)日：1998-04-21
申请号：US695533
申请日：1996-08-12
申请人： Shiroo Kamohara , Peter M. Lee , Hitoshi Matsuo , Sigeo Ihara
发明人： Shiroo Kamohara , Peter M. Lee , Hitoshi Matsuo , Sigeo Ihara
IPC分类号： H01L27/118 , H01L29/762 , H03K19/02 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： B82Y10/00 , H01L27/118 , H01L29/762 , H03K19/02 , Y10S977/937
摘要： A logical operation circuit in which wiring as generally performed between transistors is made unnecessary to improve reliability, stability and integration degree of a logical circuit using a tunnel phenomenon, for example, a single-electron tunnel phenomenon, or a flight phenomenon of a particle group. Conducting materials are arranged in a two-dimensional plane or three-dimensional space in the logical circuit. When two conducting materials are arranged to be nearest each other, the two conducting materials are connected, for example, by a single-electron tunnel phenomenon. When two conducting materials are arranged to be not nearest, there is no connection between the conducting materials by the tunnel phenomenon. Propagation of electrons is controlled by changing the arrangement. Further, because particles which have entered input regions move toward different flight directions respectively from a branch region on the basis of the property that two particles cannot enter simultaneously within an effective scatter distance by repulsive interaction between particles, flight of particles is controlled so as to enter or not branched particles into an observation region to thereby construct a wiringless logical operation circuit.
摘要翻译：不需要通常在晶体管之间进行的布线的逻辑运算电路，以提高使用隧道现象（例如单电子隧道现象）或粒子群的飞行现象的逻辑电路的可靠性，稳定性和集成度。导电材料被布置在逻辑电路中的二维平面或三维空间中。当两个导电材料被布置成彼此最接近时，例如通过单电子隧道现象连接两个导电材料。当两个导电材料被布置为不是最近时，导电材料之间没有通过隧道现象的连接。通过改变电极来控制电子的传播。此外，由于进入输入区域的颗粒基于两个颗粒不能通过颗粒之间的排斥相互作用而在有效散射距离内不能同时进入的特性从分支区域移动到不同的飞行方向，所以粒子的飞行被控制为进入或不分支的颗粒进入观察区域，从而构成无线逻辑运算电路。

4. 发明授权

US5323344A Quantum memory device 失效
标题翻译：量子存储器件
公开(公告)号：US5323344A
公开(公告)日：1994-06-21
申请号：US000880
申请日：1993-01-05
申请人： Kozo Katayama , Shiroo Kamohara
发明人： Kozo Katayama , Shiroo Kamohara
IPC分类号： G06N99/00 , G11C11/44 , H01L27/18 , H01L29/66 , H01L39/22 , H01L39/10
CPC分类号： G06N99/002 , B82Y10/00 , G11C11/44 , H01L27/18 , Y10S505/832 , Y10S505/841
摘要： A quantum memory device in which a memory operation is enabled even if the structure of a Josephson device is reduced in size. Each memory cell of the quantum memory device includes a superconducting quantum interference device having two Josephson junctions, a write word line for supplying a current to the superconducting quantum interference device, a write data line and a magnetic field detection line magnetically coupled with the superconducting quantum interference device, a three-terminal switching device for turning a signal of the magnetic field detection line on and off to transfer the signal to a read data line, and a read word line connected to a gate of the three-terminal switching device. The junction area of the Josephson junction is made small to oscillate a magnetic flux so that information is stored in accordance with the phase of oscillation of the magnetic flux. An induced current produced by an oscillating flux of a dummy cell and an induced current produced by an oscillating flux of each memory cell are compared to detect the phases of flux oscillation of the dummy and memory cells, thereby reading information.
摘要翻译：即使约瑟夫逊装置的结构尺寸减小，也能够进行存储器操作的量子存储装置。量子存储器件的每个存储单元包括具有两个约瑟夫逊结的超导量子干涉器件，用于向超导量子干涉器件提供电流的写字线，与超导量子磁耦合的写数据线和磁场检测线干扰装置，用于使磁场检测线的信号接通和断开以将信号传送到读取数据线的三端子开关装置，以及连接到三端子开关装置的栅极的读取字线。约瑟夫逊结的接合区域被做得很小以振荡磁通量，从而根据磁通量的振荡相位来存储信息。比较由虚拟单元的振荡磁通产生的感应电流和由每个存储单元的振荡磁通产生的感应电流，以检测虚拟和存储单元的磁通振荡的相位，从而读取信息。

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