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1. 发明申请

US20120049300A1 SENSOR APPARATUS AND METHOD FOR MOUNTING SEMICONDUCTOR SENSOR DEVICE 审中-公开
标题翻译：传感器装置和安装半导体传感器装置的方法
公开(公告)号：US20120049300A1
公开(公告)日：2012-03-01
申请号：US13219756
申请日：2011-08-29
申请人： Shinya YAMAGUCHI , Tomohito Taki , Takashi Usui , Soichiro Suzu
发明人： Shinya YAMAGUCHI , Tomohito Taki , Takashi Usui , Soichiro Suzu
IPC分类号： H01L29/84 , H01L21/50
CPC分类号： H01L24/29 , B81B7/0048 , B81B2201/0264 , B81B2207/012 , B81B2207/07 , G01L19/147 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/26122 , H01L2224/2956 , H01L2224/29599 , H01L2224/32225 , H01L2224/48091 , H01L2224/481 , H01L2224/48227 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/8314 , H01L2224/85181 , H01L2224/92247 , H01L2924/01079 , H01L2924/01087 , H01L2924/09701 , H01L2924/1461 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A sensor apparatus includes a semiconductor sensor device including a first attachment surface, a base part being wire-bonded to the semiconductor sensor device and including a second attachment surface, and a spacer being interposed between the first and second attachment surfaces and having a target attachment surface to which at least one of the first and second attachment surfaces is adhered via a die-bond resin. A total area of the target attachment surface is smaller than a total area of the first attachment surface.
摘要翻译：传感器装置包括半导体传感器装置，其包括第一附接表面，基底部分被引线接合到半导体传感器装置并且包括第二附接表面，以及间隔件插入在第一和第二附接表面之间并且具有目标附件第一和第二附接表面中的至少一个经由模片接合树脂粘合到该表面上。目标附着表面的总面积小于第一附接表面的总面积。

2. 发明申请

US20180313866A1 FORCE SENSOR 审中-公开
公开(公告)号：US20180313866A1
公开(公告)日：2018-11-01
申请号：US15958373
申请日：2018-04-20
申请人： Shinya YAMAGUCHI , Tomohito TAKI
发明人： Shinya YAMAGUCHI , Tomohito TAKI
IPC分类号： G01P15/12 , G01L5/16 , G01P15/18
CPC分类号： G01L5/162 , G01L1/18 , G01L1/2225 , G01L1/2268 , G01L1/2281 , G01L5/228
摘要： A force sensor includes a sensor chip that detects displacements in multiple axial directions, and a strain body that transfers force applied thereto to the sensor chip. The strain body includes a sensor chip mount on which the sensor chip is mounted, multiple columns disposed around and apart from the sensor chip mount, and connecting beams via which the sensor chip mount is fixed to the columns.

3. 发明申请

US20150235980A1 METHOD FOR MOUNTING SEMICONDUCTOR SENSOR DEVICE 审中-公开
标题翻译：安装半导体传感器器件的方法
公开(公告)号：US20150235980A1
公开(公告)日：2015-08-20
申请号：US14701589
申请日：2015-05-01
申请人： Shinya YAMAGUCHI , Tomohito TAKI , Takashi USUI , Soichiro SUZU
发明人： Shinya YAMAGUCHI , Tomohito TAKI , Takashi USUI , Soichiro SUZU
IPC分类号： H01L23/00
CPC分类号： H01L24/29 , B81B7/0048 , B81B2201/0264 , B81B2207/012 , B81B2207/07 , G01L19/147 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/26122 , H01L2224/2956 , H01L2224/29599 , H01L2224/32225 , H01L2224/48091 , H01L2224/481 , H01L2224/48227 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/8314 , H01L2224/85181 , H01L2224/92247 , H01L2924/01079 , H01L2924/01087 , H01L2924/09701 , H01L2924/1461 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A sensor apparatus includes a semiconductor sensor device including a first attachment surface, a base part being wire-bonded to the semiconductor sensor device and including a second attachment surface, and a spacer being interposed between the first and second attachment surfaces and having a target attachment surface to which at least one of the first and second attachment surfaces is adhered via a die-bond resin. A total area of the target attachment surface is smaller than a total area of the first attachment surface.
摘要翻译：传感器装置包括半导体传感器装置，其包括第一附接表面，基底部分被引线接合到半导体传感器装置并且包括第二附接表面，以及间隔件插入在第一和第二附接表面之间并且具有目标附件第一和第二附接表面中的至少一个经由模片接合树脂粘合到该表面上。目标附着表面的总面积小于第一附接表面的总面积。

4. 发明申请

US20090057676A1 THIN FILM SEMICONDUCTOR DEVICE 有权
标题翻译：薄膜半导体器件
公开(公告)号：US20090057676A1
公开(公告)日：2009-03-05
申请号：US12258738
申请日：2008-10-27
申请人： Shinya YAMAGUCHI , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya YAMAGUCHI , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L33/00
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜100％的范围内。

5. 发明申请

US20090283839A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SUBSTRATE 失效
标题翻译：半导体器件和半导体衬底
公开(公告)号：US20090283839A1
公开(公告)日：2009-11-19
申请号：US12505942
申请日：2009-07-20
申请人： Nobuyuki SUGII , Kiyokazu NAKAGAWA , Shinya YAMAGUCHI , Masanobu MIYAO
发明人： Nobuyuki SUGII , Kiyokazu NAKAGAWA , Shinya YAMAGUCHI , Masanobu MIYAO
IPC分类号： H01L27/092
CPC分类号： H01L21/823807 , H01L29/1054 , H01L29/7782 , H01L29/7848
摘要： In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like of the same group as Si, a strain is applied by a strain applying semiconductor layer 2 to a channel forming layer I having a channel of the field effect transistor formed therein so that the mobility of carriers in the channel is made larger than the mobility of carriers in that material of the channel forming layer which is unstrained.
摘要翻译：为了提供一种具有低功耗和高速的场效晶体管的半导体器件，其通过使用Si和诸如与Si相同的组的诸如Ge，C等元素的组合，施加应变通过将半导体层2施加到其中形成有场效应晶体管的沟道的沟道形成层I的应变，使得沟道中的载流子的迁移率大于沟道形成层的材料中的载流子的迁移率，无限制

6. 发明申请

US20090257704A1 GAS DETECTION APPARATUS USING OPTICAL WAVEGUIDE 审中-公开
标题翻译：使用光波导的气体检测装置
公开(公告)号：US20090257704A1
公开(公告)日：2009-10-15
申请号：US12400482
申请日：2009-03-09
申请人： Shinya YAMAGUCHI
发明人： Shinya YAMAGUCHI
IPC分类号： G02B6/00
CPC分类号： G02B6/1221 , G01N21/7703 , G01N2021/7716
摘要： Provided is a gas detection apparatus comprising an optical waveguide, wherein the optical waveguide comprises: a core formed on a substrate, the core having a refraction index of n1; and a clad to cover an upper part of the core, the clad having a refraction index of n2, wherein at least one side of a cross-sectional surface of the core, perpendicular to a light propagation direction, is formed by a straight line, and wherein the clad is formed from a sensitive resin which makes a magnitude relation of the refraction index of the core and the refraction index of the clad satisfy n1≦n2 in an atmosphere where a density of a detection gas is less than a predetermined density, and which makes the magnitude relation satisfy n1>n2 in an atmosphere where the density of the detection gas is not less than the predetermined density.
摘要翻译：本发明提供一种包括光波导的气体检测装置，其中所述光波导包括：形成在基板上的芯，所述芯具有n1的折射率; 以及覆盖所述芯的上部的包层，所述包层的折射率为n2，其中，所述芯的横截面的至少一侧垂直于光传播方向由直线形成，并且其中所述包层由敏感树脂形成，所述敏感树脂在所述检测气体的密度小于预定密度的气氛中使所述芯的折射率和所述包层的折射率的大小关系满足n1 <= n2 并且在检测气体的密度不小于预定密度的气氛中使大小关系满足n1> n2。

7. 发明申请

US20100073620A1 IMAGE DISPLAY 有权
标题翻译：图像显示
公开(公告)号：US20100073620A1
公开(公告)日：2010-03-25
申请号：US12509673
申请日：2009-07-27
申请人： Shinya YAMAGUCHI , Mutsuko HATANO , Takashi HATTORI , Naoya OKADA
发明人： Shinya YAMAGUCHI , Mutsuko HATANO , Takashi HATTORI , Naoya OKADA
IPC分类号： G02F1/1333 , H01J1/54
CPC分类号： G02F1/133305 , G02F1/13452
摘要： To provide an image display which is capable of preventing fracturing of a substrate which is attributable to a substrate expansion arising from heating or humidification during a manufacture process, impact in use, or distortion when curved display is conducted, a connection failure between a semiconductor chip and a wiring terminal which are mounted on the substrate, and crack occurring in the substrate in the vicinity of an area where the semiconductor chip is mounted, with no need to add members and with no limit of pulling the wiring around. An image display part is formed on one surface of a flexible substrate, and a groove with a depth not reaching a thickness of the substrate is continuously or intermittently defined in another surface of the substrate.
摘要翻译：为了提供能够防止在制造过程中由于加热或加湿引起的基板膨胀导致基板压裂的图像显示器，当进行弯曲显示时，使用中的冲击或失真，半导体芯片之间的连接故障以及安装在基板上的布线端子和在安装半导体芯片的区域附近的基板中发生的裂纹，而不需要添加构件，并且没有限制拉动布线。在柔性基板的一个表面上形成图像显示部分，并且在基板的另一个表面上连续或间断地限定具有未达到基板厚度的深度的凹槽。

8. 发明申请

US20070246709A1 THIN FILM SEMICONDUCTOR DEVICE 有权
标题翻译：薄膜半导体器件
公开(公告)号：US20070246709A1
公开(公告)日：2007-10-25
申请号：US11768588
申请日：2007-06-26
申请人： Shinya YAMAGUCHI , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya YAMAGUCHI , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L33/00 , H01L29/04
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜100％的范围内。

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