专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100073620A1 IMAGE DISPLAY 有权
标题翻译：图像显示
公开(公告)号：US20100073620A1
公开(公告)日：2010-03-25
申请号：US12509673
申请日：2009-07-27
申请人： Shinya YAMAGUCHI , Mutsuko HATANO , Takashi HATTORI , Naoya OKADA
发明人： Shinya YAMAGUCHI , Mutsuko HATANO , Takashi HATTORI , Naoya OKADA
IPC分类号： G02F1/1333 , H01J1/54
CPC分类号： G02F1/133305 , G02F1/13452
摘要： To provide an image display which is capable of preventing fracturing of a substrate which is attributable to a substrate expansion arising from heating or humidification during a manufacture process, impact in use, or distortion when curved display is conducted, a connection failure between a semiconductor chip and a wiring terminal which are mounted on the substrate, and crack occurring in the substrate in the vicinity of an area where the semiconductor chip is mounted, with no need to add members and with no limit of pulling the wiring around. An image display part is formed on one surface of a flexible substrate, and a groove with a depth not reaching a thickness of the substrate is continuously or intermittently defined in another surface of the substrate.
摘要翻译：为了提供能够防止在制造过程中由于加热或加湿引起的基板膨胀导致基板压裂的图像显示器，当进行弯曲显示时，使用中的冲击或失真，半导体芯片之间的连接故障以及安装在基板上的布线端子和在安装半导体芯片的区域附近的基板中发生的裂纹，而不需要添加构件，并且没有限制拉动布线。在柔性基板的一个表面上形成图像显示部分，并且在基板的另一个表面上连续或间断地限定具有未达到基板厚度的深度的凹槽。

2. 发明申请

US20110260180A1 IMAGE DISPLAY DEVICE AND THE METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US20110260180A1
公开(公告)日：2011-10-27
申请号：US13092226
申请日：2011-04-22
申请人： Takahide KURANAGA , Takashi HATTORI , Naoya OKADA , Mutsuko HATANO
发明人： Takahide KURANAGA , Takashi HATTORI , Naoya OKADA , Mutsuko HATANO
IPC分类号： H01L51/50 , H01L33/08
CPC分类号： H01L51/5253 , G02F1/133351 , H01L51/5256 , H01L2251/566
摘要： An image display device comprises: a first substrate having flexure property; a first resin layer which is attached to the first substrate and over which thin film transistors are located; a barrier layer which comprises an inorganic film covering a surface of the resin layer; and a first thin film layer and a second thin film layer which are located so as to sandwich the first resin layer with the barrier layer disposed therebetween.
摘要翻译：图像显示装置包括：具有弯曲特性的第一基板; 第一树脂层，其附接到第一基板并且薄膜晶体管位于该第一树脂层上; 阻挡层，其包含覆盖所述树脂层的表面的无机膜; 以及第一薄膜层和第二薄膜层，所述第一薄膜层和第二薄膜层被定位成夹在其间设置有阻挡层的第一树脂层。

3. 发明申请

US20100026938A1 IMAGE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US20100026938A1
公开(公告)日：2010-02-04
申请号：US12509581
申请日：2009-07-27
申请人： Takashi HATTORI , Midori KATO , Mutsuko HATANO , Takeshi SATOU
发明人： Takashi HATTORI , Midori KATO , Mutsuko HATANO , Takeshi SATOU
IPC分类号： G02F1/1335 , G02F1/1333 , G02F1/13
CPC分类号： G02F1/133345 , G02F1/133528 , G02F1/1362 , G02F2001/133567
摘要： An image display device having a display panel in which a first substrate and a second substrate are disposed to each other, in which the first substrate includes an insulating substrate composed of a resin, a circuit layer having a circuit where a plurality of Thin-film transistors are arranged in a matrix, and a polarizer disposed between the insulating substrate and the circuit layer, the insulating substrate has a thickness of 20 μm or more and 150 μm or less, a transmittance of 80% or more for a visible light at a wavelength of 400 nm or more and 800 nm or less, and a 3% weight reduction temperature of 300° C. or higher, and has no melting point or has a melting point of 300° C. or higher.
摘要翻译：一种具有显示面板的图像显示装置，其中第一基板和第二基板彼此配置，其中第一基板包括由树脂构成的绝缘基板，电路层具有多个薄膜晶体管布置在矩阵中，并且偏振器设置在绝缘基板和电路层之间，绝缘基板的厚度为20μm以上且150μm以下，对于可见光的透射率为80％以上波长400nm以上且800nm以下，3％重量减少温度为300℃以上，无熔点或熔点为300℃以上。

4. 发明申请

US20080290344A1 Image Display Device And Method For Manufacturing The Same 审中-公开
标题翻译：图像显示装置及其制造方法
公开(公告)号：US20080290344A1
公开(公告)日：2008-11-27
申请号：US12129142
申请日：2008-05-29
申请人： Mitsuharu TAI , Mutsuko HATANO , Takeshi SATO , Seongkee PARK , Kiyoshi OUCHI
发明人： Mitsuharu TAI , Mutsuko HATANO , Takeshi SATO , Seongkee PARK , Kiyoshi OUCHI
IPC分类号： H01L31/036 , G02F1/136 , H01L21/00
CPC分类号： H01L21/02691 , H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L27/1296 , Y10S438/949
摘要： An image display device manufactured by using a polycrystalline semiconductor film. The polycrystalline semiconductor film is composed of crystal grains with a region free from crystal grain boundaries of at least 2 μm in width and at least 3 μm in length, small crystal grain boundary groups each composed of three or more crystal grain boundaries arranged substantially in parallel to each other and with an interval of not greater than 100 μm are included in a part of the region, and the small crystal grain boundary groups are partially eliminated.
摘要翻译：一种使用多晶半导体膜制造的图像显示装置。多晶半导体膜由具有宽度至少为2μm，长度至少为3μm的晶界的区域的晶粒构成，小晶粒边界组由三个以上构成的晶粒边界基本平行地排列并且间隔不大于100μm的区域包含在该区域的一部分中，并且部分地消除了小的晶粒边界组。

5. 发明申请

US20140248748A1 DISPLAY DEVICE 审中-公开
公开(公告)号：US20140248748A1
公开(公告)日：2014-09-04
申请号：US14278358
申请日：2014-05-15
申请人： Tetsufumi KAWAMURA , Takeshi SATO , Mutsuko HATANO , Yoshiaki TOYOTA, I
发明人： Tetsufumi KAWAMURA , Takeshi SATO , Mutsuko HATANO , Yoshiaki TOYOTA, I
IPC分类号： H01L27/12
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.

6. 发明申请

US20100102322A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100102322A1
公开(公告)日：2010-04-29
申请号：US12606284
申请日：2009-10-27
申请人： Mieko MATSUMURA , Mutsuko HATANO , Yoshiaki TOYOTA , Takuo KAITOH
发明人： Mieko MATSUMURA , Mutsuko HATANO , Yoshiaki TOYOTA , Takuo KAITOH
IPC分类号： H01L33/00 , H01L21/30
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/3262 , H01L29/04 , H01L29/78696
摘要： The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode.
摘要翻译：提供具有形成在包括显示部分的基板上的薄膜晶体管的显示装置。该薄膜晶体管包括：栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 半导体层叠膜，形成在所述栅极绝缘膜的顶部上，以在所述栅极上延伸，所述半导体层叠膜通过层叠至少多晶半导体膜和非晶半导体膜，第一电极和设置在顶部的第二电极而形成的半导体层叠膜，以跨越叠加栅电极的区域彼此相对。在显示装置中，半导体层叠膜形成在从第一电极延伸的布线的正下方并且紧接在从第二电极延伸的布线的下方。

7. 发明申请

US20140106490A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20140106490A1
公开(公告)日：2014-04-17
申请号：US14106287
申请日：2013-12-13
申请人： Tetsufumi KAWAMURA , Takeshi SATO , Mutsuko HATANO , Yoshiaki TOYOTA
发明人： Tetsufumi KAWAMURA , Takeshi SATO , Mutsuko HATANO , Yoshiaki TOYOTA
IPC分类号： H01L27/12
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
摘要翻译：提供了一种用于提高像素的开口率的显示装置。在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极，透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

8. 发明申请

US20090267047A1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20090267047A1
公开(公告)日：2009-10-29
申请号：US12430539
申请日：2009-04-27
申请人： Yoshitaka SASAGO , Riichiro TAKEMURA , Masaharu KINOSHITA , Toshiyuki MINE , Akio SHIMA , Hideyuki MATSUOKA , Mutsuko HATANO , Norikatsu TAKAURA
发明人： Yoshitaka SASAGO , Riichiro TAKEMURA , Masaharu KINOSHITA , Toshiyuki MINE , Akio SHIMA , Hideyuki MATSUOKA , Mutsuko HATANO , Norikatsu TAKAURA
IPC分类号： H01L47/00
CPC分类号： H01L27/2481 , H01L21/02532 , H01L21/02675 , H01L27/2409 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146
摘要： The present invention can promote the large capacity, high performance and high reliability of a semiconductor memory device by realizing high-performance of both the semiconductor device and a memory device when the semiconductor memory device is manufactured by stacking a memory device such as ReRAM or the phase change memory and the semiconductor device. After a polysilicon forming a selection device is deposited in an amorphous state at a low temperature, the crystallization of the polysilicon and the activation of impurities are briefly performed with heat treatment by laser annealing. When laser annealing is performed, the recording material located below the silicon subjected to the crystallization is completely covered with a metal film or with the metal film and an insulating film, thereby making it possible to suppress a temperature increase at the time of performing the annealing and to reduce the thermal load of the recording material.
摘要翻译：本发明可以通过实现半导体器件和存储器件的高性能来促进半导体存储器件的大容量，高性能和高可靠性，当半导体存储器件通过堆叠诸如ReRAM的存储器件或相变存储器和半导体器件。在低温下以非晶态沉积形成选择器件的多晶硅后，通过激光退火的热处理来简单地进行多晶硅的结晶化和杂质的活化。当进行激光退火时，位于被结晶的硅下方的记录材料完全被金属膜或金属膜和绝缘膜覆盖，从而可以抑制进行退火时的温度升高并降低记录材料的热负荷。

9. 发明申请

US20080048182A1 DISPLAY WITH INTEGRAL SPEAKER ELEMENT 有权
标题翻译：显示与整体扬声器元素
公开(公告)号：US20080048182A1
公开(公告)日：2008-02-28
申请号：US11771713
申请日：2007-06-29
申请人： Mutsuko HATANO
发明人： Mutsuko HATANO
IPC分类号： H01L29/04 , H01L29/08
CPC分类号： H01L27/12
摘要： A display housing a sound element and a driving circuit that may be built in on the same substrate as the display panel. Thin-film transistors PTFT constituting pixels and a sound wave generation device SPO1 having a laminated structure of a heat generation layer 700, a heat insulation layer 701 and a heat radiation layer 702 are formed on a thin-film transistor (TFT) substrate 500 on which polysilicon thin-film transistors PTFT are formed.
摘要翻译：一种显示器，其容纳可构建在与显示面板相同的基板上的声音元件和驱动电路。在薄膜晶体管（TFT）基板500上形成具有发热层700，隔热层701和散热层702的叠层结构的构成像素的薄膜晶体管PTFT和具有层叠结构的声波发生装置SPO 1 在其上形成多晶硅薄膜晶体管PTFT。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式