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1. 发明申请

US20100075267A1 SILICON WAFER HEAT TREATMENT METHOD 有权
标题翻译：硅波热处理方法
公开(公告)号：US20100075267A1
公开(公告)日：2010-03-25
申请号：US12443365
申请日：2007-09-28
申请人： Shinya Sadohara , Kozo Nakamura , Shiro Yoshino
发明人： Shinya Sadohara , Kozo Nakamura , Shiro Yoshino
IPC分类号： C30B15/14
CPC分类号： H01L21/324 , H01L21/3225 , H01L22/12
摘要： A silicon wafer preferable to a semiconductor device is produced by determining a heat treatment condition hardly causing slip dislocations and heat-treating the silicon wafer under the condition. The resistance is calculated by using a calculation formula used for predicting the slip resistance of the wafer from the density, size, and residual solid-solution oxygen concentration of the oxygen precipitation in the silicon wafer, the state of oxygen precipitation such that heat treatment not causing any slip dislocation can be carried out is designed, and thus a silicon wafer heat treatment method under the heat treatment condition not causing any slip dislocation is determined. A silicon wafer heat-treated under such a condition can be provided.
摘要翻译：通过确定在该条件下几乎不引起滑移位错和热处理硅晶片的热处理条件来制造优于半导体器件的硅晶片。通过使用用于从硅晶片中的氧沉淀的密度，尺寸和残留固溶度氧浓度来预测晶片的滑动阻力的计算公式，氧沉淀的状态使得不进行热处理来计算电阻导致任何滑移位错都可以进行设计，因此硅片热处理方法在热处理条件下不会产生滑脱错位。可以提供在这种条件下热处理的硅晶片。

2. 发明授权

US08573969B2 Silicon wafer heat treatment method 有权
标题翻译：硅晶片热处理方法
公开(公告)号：US08573969B2
公开(公告)日：2013-11-05
申请号：US12443365
申请日：2007-09-28
申请人： Shinya Sadohara , Kozo Nakamura , Shiro Yoshino
发明人： Shinya Sadohara , Kozo Nakamura , Shiro Yoshino
IPC分类号： F26B11/02 , C01B33/00 , C01B33/02
CPC分类号： H01L21/324 , H01L21/3225 , H01L22/12
摘要： A silicon wafer preferable to a semiconductor device is produced by determining a heat treatment condition hardly causing slip dislocations and heat-treating the silicon wafer under the condition. The resistance is calculated by using a calculation formula used for predicting the slip resistance of the wafer from the density, size, and residual solid-solution oxygen concentration of the oxygen precipitation in the silicon wafer, the state of oxygen precipitation such that heat treatment not causing any slip dislocation can be carried out is designed, and thus a silicon wafer heat treatment method under the heat treatment condition not causing any slip dislocation is determined. A silicon wafer heat-treated under such a condition can be provided.
摘要翻译：通过确定在该条件下几乎不引起滑移位错和热处理硅晶片的热处理条件来制造优于半导体器件的硅晶片。通过使用用于从硅晶片中的氧沉淀的密度，尺寸和残留固溶度氧浓度来预测晶片的滑动阻力的计算公式，氧沉淀的状态使得不进行热处理来计算电阻导致任何滑移位错都可以进行设计，因此硅片热处理方法在热处理条件下不会产生滑脱错位。可以提供在这种条件下热处理的硅晶片。

3. 发明申请

US20090061140A1 Silicon Single Crystal Producing Method, Annealed Wafer, and Method of Producing Annealed Wafer 有权
标题翻译：硅单晶生产方法，退火晶片，以及退火晶片的生产方法
公开(公告)号：US20090061140A1
公开(公告)日：2009-03-05
申请号：US11887244
申请日：2006-02-14
申请人： Shinya Sadohara , Ryota Suewaka , Shiro Yoshino , Kozo Nakamura , Yutaka Shiraishi , Syunji Nonaka
发明人： Shinya Sadohara , Ryota Suewaka , Shiro Yoshino , Kozo Nakamura , Yutaka Shiraishi , Syunji Nonaka
IPC分类号： B32B3/02 , H01L21/20
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206 , C30B33/02 , H01L21/3225 , Y10T428/21
摘要： A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of the annealed wafer. Considering that annealing a silicon wafer leads to an increase of density (quantity) of deposits associated with oxygen and nitrogen and forming a core of the SSDs, SSDs are decreased by reducing the density (quantity) of the deposits associated with oxygen and nitrogen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling and growing the silicon single crystal 6 before annealing. Alternatively, SSD is reduced by polishing after annealing.
摘要翻译：一种可降低SSD的方法，同时减少晶片表面上的SSD以外的空穴缺陷，这对于退火的晶片是必需的，并且确保产生作为大量吸收源的BMD，以便稳定质量退火晶片。考虑到硅晶片的退火导致与氧和氮相关的沉积物的密度（量）增加并形成SSD的核心，通过控制通过控制与氧和氮相关的沉积物的密度（量）来降低SSD 在退火前拉拔生长硅单晶6的过程中，氧浓度，氮浓度和冷却浓度三个参数。或者，退火后通过抛光减少SSD。

4. 发明授权

US07875116B2 Silicon single crystal producing method, annealed wafer, and method of producing annealed wafer 有权
标题翻译：硅单晶制造方法，退火晶片，以及退火晶片的制造方法
公开(公告)号：US07875116B2
公开(公告)日：2011-01-25
申请号：US11887244
申请日：2006-02-14
申请人： Shinya Sadohara , Ryota Suewaka , Shiro Yoshino , Kozo Nakamura , Yutaka Shiraishi , Syunji Nonaka
发明人： Shinya Sadohara , Ryota Suewaka , Shiro Yoshino , Kozo Nakamura , Yutaka Shiraishi , Syunji Nonaka
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206 , C30B33/02 , H01L21/3225 , Y10T428/21
摘要： A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of the annealed wafer. Considering that annealing a silicon wafer leads to an increase of density (quantity) of deposits associated with oxygen and nitrogen and forming a core of the SSDs, SSDs are decreased by reducing the density (quantity) of the deposits associated with oxygen and nitrogen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling and growing the silicon single crystal 6 before annealing. Alternatively, SSD is reduced by polishing after annealing.
摘要翻译：一种可降低SSD的方法，同时减少晶片表面上的SSD以外的空穴缺陷，这对于退火晶片是必需的，并且确保产生用作块体中的吸收源的BMD，以便稳定质量退火晶片。考虑到硅晶片的退火导致与氧和氮相关的沉积物的密度（量）增加并形成SSD的核心，通过控制通过控制与氧和氮相关的沉积物的密度（量）来降低SSD 在退火前拉拔生长硅单晶6的过程中，氧浓度，氮浓度和冷却浓度三个参数。或者，退火后通过抛光减少SSD。

5. 发明授权

US07759227B2 Silicon semiconductor substrate heat-treatment method and silicon semiconductor substrate treated by the method 有权
标题翻译：硅半导体衬底热处理方法和通过该方法处理的硅半导体衬底
公开(公告)号：US07759227B2
公开(公告)日：2010-07-20
申请号：US11578814
申请日：2005-04-22
申请人： Susumu Maeda , Takahisa Sugiman , Shinya Sadohara , Shiro Yoshino , Kouzo Nakamura
发明人： Susumu Maeda , Takahisa Sugiman , Shinya Sadohara , Shiro Yoshino , Kouzo Nakamura
IPC分类号： H01L21/322 , H01L29/167
CPC分类号： H01L21/3225
摘要： A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing atmosphere. The heat-treatment method is provided for forming a desired internal defect density distribution by controlling a nitrogen concentration distribution in a depth direction of the silicon wafer for heat-treatment, the method including heat-treating a predetermined silicon wafer used for manufacturing a silicon wafer having a denuded zone in the vicinity of the surface thereof.
摘要翻译：提供了能够通过在含氮气氛中在RTA之后任意控制晶片BMD密度的深度方向上的M形分布，从而普遍地控制对制造商对制造商的需求可以不同的接近吸气结构的方法。提供了通过控制用于热处理的硅晶片的深度方向上的氮浓度分布来形成期望的内部缺陷密度分布的热处理方法，该方法包括热处理用于制造硅晶片的预定硅晶片在其表面附近具有剥离区域。

6. 发明申请

US20070252239A1 Silicon Semiconductor Substrate Heat-Treatment Method and Silicon Semiconductor Substrate Treated by the Method 有权
标题翻译：硅半导体基板热处理方法和硅半导体基板处理方法
公开(公告)号：US20070252239A1
公开(公告)日：2007-11-01
申请号：US11578814
申请日：2005-04-22
申请人： Susumu Maeda , Takahisa Sugiman , Shinya Sadohara , Shiro Yoshino , Kouzo Nakamura
发明人： Susumu Maeda , Takahisa Sugiman , Shinya Sadohara , Shiro Yoshino , Kouzo Nakamura
IPC分类号： H01L29/167 , H01L21/322
CPC分类号： H01L21/3225
摘要： A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing atmosphere. The heat-treatment method is provided for forming a desired internal defect density distribution by controlling a nitrogen concentration distribution in a depth direction of the silicon wafer for heat-treatment, the method including heat-treating a predetermined silicon wafer used for manufacturing a silicon wafer having a denuded zone in the vicinity of the surface thereof.
摘要翻译：提供了能够通过在含氮气氛中在RTA之后任意控制晶片BMD密度的深度方向上的M形分布，从而普遍地控制对制造商对制造商的需求可以不同的接近吸气结构的方法。提供了通过控制用于热处理的硅晶片的深度方向上的氮浓度分布来形成期望的内部缺陷密度分布的热处理方法，该方法包括热处理用于制造硅晶片的预定硅晶片在其表面附近具有剥离区域。

7. 发明授权

US08246744B2 Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium for storing program for predicting precipitation behavior of oxygen in silicon single crystal 有权
标题翻译：用于预测硅单晶中氧的沉淀行为的方法，用于确定硅单晶生产参数的方法，以及储存用于预测硅单晶中氧沉淀行为的程序
公开(公告)号：US08246744B2
公开(公告)日：2012-08-21
申请号：US10586445
申请日：2005-01-27
申请人： Kozo Nakamura , Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
发明人： Kozo Nakamura , Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
IPC分类号： C30B29/06
CPC分类号： C30B15/206 , C30B29/06 , C30B33/02 , H01L21/3225
摘要： By specifying an initial oxygen concentration in a silicon single crystal and a concentration of thermal donors produced according to a thermal history from 400° C. to 550° C. that the silicon single crystal undergoes during crystal growth, a nucleation rate of oxygen precipitates produced in the silicon single crystal while the silicon single crystal is subjected to a heat treatment is determined. Further, by specifying the heat treatment condition of the silicon single crystal, an oxygen precipitate density and an amount of precipitated oxygen under a given heat treatment condition are predicted by calculation.
摘要翻译：通过指定硅单晶中的初始氧浓度和根据400℃至550℃的热历史产生的热供体的浓度，晶体生长期间硅单晶经历，产生氧沉淀物的成核速率在硅单晶中进行热处理的同时测定硅单晶。此外，通过规定硅单晶的热处理条件，通过计算来预测在给定的热处理条件下的氧沉淀物浓度和沉淀氧的量。

8. 发明申请

US20090210166A1 Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium for storing program for predicting precipitation behavior of oxygen in silicon single crystal 有权
标题翻译：用于预测硅单晶中氧的沉淀行为的方法，用于确定硅单晶生产参数的方法，以及储存用于预测硅单晶中氧沉淀行为的程序
公开(公告)号：US20090210166A1
公开(公告)日：2009-08-20
申请号：US10586445
申请日：2005-01-27
申请人： Kozo Nakamura , Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
发明人： Kozo Nakamura , Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
IPC分类号： G06F19/00
CPC分类号： C30B15/206 , C30B29/06 , C30B33/02 , H01L21/3225
摘要： By specifying an initial oxygen concentration in a silicon single crystal and a concentration of thermal donors produced according to a thermal history from 400° C. to 550° C. that the silicon single crystal undergoes during crystal growth, a nucleation rate of oxygen precipitates produced in the silicon single crystal while the silicon single crystal is subjected to a heat treatment is determined. Further, by specifying the heat treatment condition of the silicon single crystal, an oxygen precipitate density and an amount of precipitated oxygen under a given heat treatment condition are predicted by calculation.
摘要翻译：通过指定硅单晶中的初始氧浓度和根据400℃至550℃的热历史产生的热供体的浓度，晶体生长期间硅单晶经历，产生氧沉淀物的成核速率在硅单晶中进行热处理的同时测定硅单晶。此外，通过规定硅单晶的热处理条件，通过计算来预测在给定的热处理条件下的氧沉淀物浓度和沉淀氧的量。

9. 发明申请

US20070113778A1 Epitaxial silicon wafer 审中-公开
标题翻译：外延硅晶片
公开(公告)号：US20070113778A1
公开(公告)日：2007-05-24
申请号：US11653309
申请日：2007-01-16
申请人： Satoshi Komiya , Shiro Yoshino , Masayoshi Danbata , Kouchirou Hayashida
发明人： Satoshi Komiya , Shiro Yoshino , Masayoshi Danbata , Kouchirou Hayashida
IPC分类号： C30B19/00
CPC分类号： C30B15/04 , C30B15/00 , C30B29/06
摘要： A silicon ingot is manufactured by pulling a nitrogen doped silicon single crystal. The oxygen concentration in the crystal is controlled during the pulling, so as to maintain a relationship between the oxygen and nitrogen concentration in the ingot, corresponding to the formula Oi=C1−[C2×(Log Ni)], where C1 and C2 are first and second constants, and Oi is the oxygen concentration and Ni is the nitrogen concentration in the ingot. C1 and C2 will vary depending on the defect criteria. For example, for one criteria C1 may equal to 146.3×1017 and C2 may equal to 9×1017, and Ni may be within the range of approximately 3×1015 to approximately 3×1014 atoms/cm3, while for a stricter defect criteria C1 may equal 127×1017 and C2 may equal 8×1017, and Ni may be within the range proximately 1×1015 to approximately 1×1014 atoms/cm3.
摘要翻译：通过拉氮掺杂硅单晶制造硅锭。在拉伸期间控制晶体中的氧浓度，以保持晶锭中氧和氮浓度之间的关系，对应于式O i = C 1 - [C 2x（Log Ni）]，其中C 1和 C 2是第一和第二常数，Oi是氧浓度，Ni是锭中的氮浓度。 C 1和C 2将根据缺陷标准而变化。例如，对于一个标准，C 1可以等于146.3×10 17，C 2可以等于9×10 17，并且Ni可以在约3×10 15至约3×10 14原子/ cm 3的范围，而对于更严格的缺陷，C 1可以等于127×10 17 和C 2可以等于8×10 17，并且Ni可以在约1×10 15至约1×10 14原子/ cm 3的范围内 ^{3 。}

10. 发明授权

US5385115A Semiconductor wafer heat treatment method 失效
标题翻译：半导体晶片热处理方法
公开(公告)号：US5385115A
公开(公告)日：1995-01-31
申请号：US30356
申请日：1993-05-13
申请人： Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
发明人： Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
IPC分类号： H01L21/322 , H01L21/324 , C30B1/02
CPC分类号： H01L21/3225
摘要： A semiconductor wafer heat treatment method for improving the yield of devices which are end products by sampling sliced single-crystal silicon wafers made by CZ method to previously calculate the thermal donor concentration of each portion on the wafers and providing them with the IG heat treatment process which causes oxygen precipitation nucleus under the heat treatment condition determined according to the thermal donor concentration so that the change value (delta Oi) of the initial oxygen concentration (initial Oi) before the IG heat treatment to the oxygen concentration after the heat treatment will be kept within a predetermined range.
摘要翻译： PCT No.PCT / JP91 / 01259 Sec。 371日期1993年3月17日 102（e）1993年3月17日PCT PCT 1991年9月20日PCT公布。出版物WO92 / 05579 日本1992年4月2日。一种半导体晶片热处理方法，用于通过采用通过CZ方法制备的切片单晶硅晶片来提取作为最终产品的器件的产量，以预先计算晶片上每个部分的供体浓度，并提供它们具有IG热处理过程，其在根据供体浓度确定的热处理条件下引起氧沉淀核，使得IG热处理之前的初始氧浓度（初始Oi）与氧气的变化值（ΔOi）热处理后的浓度将保持在预定范围内。

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