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    • 10. 发明授权
    • Solid-state imaging device
    • 固态成像装置
    • US4223330A
    • 1980-09-16
    • US5567
    • 1979-01-22
    • Norio KoikeIwao TakemotoShinya OhbaMasaharu KuboShuhei Tanaka
    • Norio KoikeIwao TakemotoShinya OhbaMasaharu KuboShuhei Tanaka
    • H01L27/146H04N5/335H04N5/359H04N5/374H01L27/14H01L29/78
    • H01L27/14654
    • In a solid-state imaging device having, in one major surface region of a semiconductor substrate, photoelectric conversion elements which are disposed in a two-dimensional array, vertical switching metal-insulator-semiconductor field effect transistors and horizontal switching metal-insulator-semiconductor field effect transistors which select the photoelectric conversion elements, and vertical and horizontal scanning circuits which turn the switching transistors "on" and "off," a solid-state imaging device characterized in that the vertical switching metal-insulator-semiconductor field effect transistors which are not selected are placed into a deeper cutoff state, i.e., the major surface regions of the semiconductor substrate corresponding to gate electrodes of these vertical switching metal-insulator-semiconductor field effect transistors are placed at an accumulation level.
    • 在具有在半导体衬底的一个主表面区域中设置为二维阵列的光电转换元件的立体成像器件中,垂直开关金属 - 绝缘体 - 半导体场效应晶体管和水平开关金属 - 绝缘体半导体 选择光电转换元件的场效应晶体管以及使开关晶体管“导通”和“截止”的垂直和水平扫描电路,其特征在于垂直开关金属 - 绝缘体半导体场效应晶体管 未选择的位置被置于更深的截止状态,即,对应于这些垂直开关金属 - 绝缘体 - 半导体场效应晶体管的栅极的半导体衬底的主表面区域被放置在累积水平。