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1. 发明申请

US20120015508A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120015508A1
公开(公告)日：2012-01-19
申请号：US13242789
申请日：2011-09-23
申请人： Shinya IWASAKI , Akira KAMEI
发明人： Shinya IWASAKI , Akira KAMEI
IPC分类号： H01L21/22
CPC分类号： H01L29/861 , H01L21/263 , H01L21/266 , H01L21/761 , H01L27/0727 , H01L29/32 , H01L29/7397
摘要： Provided is a method of manufacturing a semiconductor device capable of preventing a relative displacement of the positions between a range where impurity ions are injected and a range where charged particles are injected. The method of manufacturing the semiconductor device includes: irradiating impurity ions in a state in which a mask is disposed between an impurity ion irradiation apparatus and a semiconductor substrate; and irradiating charged particles to form a short carrier lifetime region, in a state in which the mask is disposed between a charged particle irradiation apparatus and the semiconductor substrate. A relative positional relationship between the mask and the semiconductor substrate is not changed from a beginning of one of the irradiating the impurity ions and the irradiating the charged particles to a completion of both of the irradiating the impurity ions and the irradiating the charged particles.
摘要翻译：提供一种制造能够防止在注入杂质离子的范围之间的位置与注入带电粒子的范围之间的位置的相对位移的半导体器件的方法。半导体装置的制造方法包括：在杂质离子照射装置和半导体基板之间设置掩模的状态下照射杂质离子; 并且在掩模设置在带电粒子照射装置和半导体基板之间的状态下照射带电粒子以形成短的载流子寿命区域。掩模和半导体衬底之间的相对位置关系从照射杂质离子和照射带电粒子之一开始到完全照射杂质离子并照射带电粒子之后不会改变。

2. 发明申请

US20170012039A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20170012039A1
公开(公告)日：2017-01-12
申请号：US15114201
申请日：2014-09-08
申请人： Satoru KAMEYAMA , Shinya IWASAKI , Yuki HORIUCHI , Shuhei OKI
发明人： Satoru KAMEYAMA , Shinya IWASAKI , Yuki HORIUCHI , Shuhei OKI
IPC分类号： H01L27/06 , H01L21/8222 , H01L29/06 , H01L21/324 , H01L29/10 , H01L21/02 , H01L21/265
CPC分类号： H01L27/0664 , H01L21/02675 , H01L21/265 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L21/425 , H01L21/8222 , H01L27/0629 , H01L29/0684 , H01L29/0821 , H01L29/0839 , H01L29/0847 , H01L29/1095 , H01L29/36 , H01L29/66348 , H01L29/7397 , H01L29/78 , H01L29/8611
摘要： A semiconductor device, in which, in a density distribution of first conductivity type impurities in the first conductivity type region measured along a thickness direction of the semiconductor substrate, a local maximum value N1, a local minimum value N2, a local maximum value N3, and a density N4 are formed in this order from front surface side, a relationship of N1>N3>N2>N4 is satisfied, a relationship of N3/10>N2 is satisfied, and a distance “a” from the surface to the depth having the local maximum value N1 is larger than twice a distance “b” from the depth having the local maximum value N1 to the depth having the local minimum N2.
摘要翻译：一种半导体器件，其中沿着半导体衬底的厚度方向测量的第一导电类型区域中的第一导电类型杂质的密度分布为局部最大值N1，局部最小值N2，局部最大值N3，并且从表面侧依次形成密度N4，满足N1> N3> N2> N4的关系，满足N3 / 10> N2的关系，并且从表面到深度的距离“a” 具有局部最大值N1的距离大于距离具有局部最大值N1的深度到具有局部最小值N2的深度的距离“b”的两倍。

3. 发明申请

US20160027881A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160027881A1
公开(公告)日：2016-01-28
申请号：US14773481
申请日：2013-03-15
申请人： Shinya IWASAKI
发明人： Shinya IWASAKI
IPC分类号： H01L29/423 , H01L21/265 , H01L29/739 , H01L29/10 , H01L29/66 , H01L29/78
CPC分类号： H01L29/4236 , H01L21/26513 , H01L29/1095 , H01L29/42376 , H01L29/66348 , H01L29/66734 , H01L29/7397 , H01L29/7813
摘要： Disclosed herein is a semiconductor device which includes a semiconductor substrate and a trench gate. The semiconductor substrate includes a drift layer, a body layer, and a first semiconductor layer provided on a part of a front surface of the body layer. The trench gate extends from a front surface of the semiconductor substrate to reach the drift layer. The trench gate includes a gate insulating film and a gate electrode. The inner wall of the trench, which is located at a depth where the inner wall makes contact with the body layer, is a crystal plane. A width of the trench in a transverse direction includes a width located at the front surface of the semiconductor substrate that is narrower than a width located at a depth from a lower end of the first semiconductor layer to a lower end of the body layer.
摘要翻译：这里公开了包括半导体衬底和沟槽栅极的半导体器件。半导体衬底包括漂移层，主体层和设置在体层的前表面的一部分上的第一半导体层。沟槽栅极从半导体衬底的前表面延伸到达漂移层。沟槽栅极包括栅极绝缘膜和栅电极。位于内壁与身体层接触的深度处的沟槽的内壁是晶面。沟槽在横向上的宽度包括位于半导体衬底的前表面的宽度，该宽度比位于从第一半导体层的下端到本体层的下端的深度处的宽度窄。

4. 发明申请

US20080229877A1 CRANKSHAFT, INTERNAL COMBUSTION ENGINE, TRANSPORTATION APPARATUS, AND PRODUCTION METHOD FOR CRANKSHAFT 审中-公开
标题翻译：起重机，内燃机，运输装置和起重机的生产方法
公开(公告)号：US20080229877A1
公开(公告)日：2008-09-25
申请号：US12052817
申请日：2008-03-21
申请人： Shinya IWASAKI , Hiroshi YAMAGATA , Hirotaka KURITA
发明人： Shinya IWASAKI , Hiroshi YAMAGATA , Hirotaka KURITA
IPC分类号： F16C3/04
CPC分类号： C21D1/09 , B23K26/0006 , B23K26/0604 , B23K26/0613 , B23K26/0823 , B23K26/352 , B23K2101/005 , B23K2103/50 , C21D9/30 , C21D2221/00 , C21D2221/10 , F16C3/08 , F16C2360/22 , Y10T74/2173
摘要： A crankshaft having a crankpin, a crank journal, and a crank arm for linking the crankpin and the crank journal, includes a pin fillet portion located between the crankpin and the crank arm, and a journal fillet portion located between the crank journal and the crank arm. At least one of the crankpin and the crank journal has a diameter of no less than about 20 mm and no more than about 40 mm. At least one of the pin fillet portion and the journal fillet portion contains a quench-hardened layer having a thickness of no less than about 1 mm and no more than about 2 mm in the vicinity of a surface thereof. The crankpin and the crank journal substantially do not contain any quench-hardened layer having a thickness exceeding about 2 mm in the vicinity of a surface thereof.
摘要翻译：具有曲柄销，曲柄轴颈和用于连接曲柄销和曲柄轴颈的曲柄臂的曲轴包括位于曲柄销和曲柄臂之间的销圆角部分，以及位于曲柄轴颈和曲柄之间的轴颈圆角部分臂。曲柄销和曲柄轴颈中的至少一个具有不小于约20mm且不大于约40mm的直径。销圆角部分和轴颈圆角部分中的至少一个包含在其表面附近具有不小于约1mm且不大于约2mm的厚度的淬火硬化层。曲柄销和曲柄轴颈在其表面附近基本上不包含厚度超过约2mm的任何淬火硬化层。

5. 发明申请

US20080065901A1 BIOMETRICS AUTHENTICATION METHOD, MEDIA FOR INDIVIDUAL AUTHENTICATION, AND BIOMETRICS AUTHENTICATION DEVICE 有权
标题翻译：生物识别认证方法，个人认证媒体和生物识别认证设备
公开(公告)号：US20080065901A1
公开(公告)日：2008-03-13
申请号：US11853225
申请日：2007-09-11
申请人： Kazuo TAKAKU , Yasuhiko MITA , Naoko SUZUKI , Shinya IWASAKI , Masayuki YANO , Ikuo MUTOU
发明人： Kazuo TAKAKU , Yasuhiko MITA , Naoko SUZUKI , Shinya IWASAKI , Masayuki YANO , Ikuo MUTOU
IPC分类号： H04L9/00
CPC分类号： G07C9/00087 , G06F21/32 , G06F21/34 , G06F21/83
摘要： A biometrics authentication device which detects body characteristics, performs verification against registered biometrics data, and performs individual authentication, by which confidentiality is improved even when biometrics data is separated, distributed and stored. A biometrics information key is created from biometrics data detected by a detection device, the biometrics data is divided into a plurality of portions, and the portions are stored on different media. The biometrics information key is stored on one media, and at the time of authentication, the separated biometrics data portions are combined and a biometrics information key is created and is compared with the biometrics information key, to judge the linked relationship. Hence confidentiality of the association of the individual separated data portions can be improved even when the biometrics data is separated, distributed and stored, contributing to prevent illicit use resulting from leakage or theft of biometrics data.
摘要翻译：一种检测身体特征的生物体认证装置，对登记的生物特征数据执行验证，并且执行个体认证，即使生物特征数据被分离，分发和存储，机密性也得到改善。生物特征信息密钥由检测装置检测的生物特征数据创建，生物统计数据被分成多个部分，并且部分存储在不同的媒体上。将生物识别信息密钥存储在一个媒体上，并且在认证时将分离的生物统计数据部分组合起来，生成生物统计信息密钥并与生物特征信息密钥进行比较，以判断链接关系。因此，即使分离，分发和存储生物特征数据，也可以提高各个分离的数据部分的关联的机密性，有助于防止由于生物特征数据的泄漏或盗窃而导致的非法使用。

6. 发明申请

US20160005622A1 METHOD FOR REDUCING NONUNIFORMITY OF FORWARD VOLTAGE OF SEMICONDUCTOR WAFER 有权
标题翻译：降低半导体波形前向电压非均匀性的方法
公开(公告)号：US20160005622A1
公开(公告)日：2016-01-07
申请号：US14769011
申请日：2013-03-06
申请人： Shinya IWASAKI
发明人： Shinya IWASAKI
IPC分类号： H01L21/322 , H01L29/32 , H01L21/265
CPC分类号： H01L21/322 , H01L21/263 , H01L21/265 , H01L21/26506 , H01L21/266 , H01L29/32 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/868
摘要： There is provided a method for reducing the nonuniformity of forward voltage Vf of an N-type semiconductor wafer in which density of impurities included in an N-layer is nonuniformly distributed in a plane view of the semiconductor wafer. The method reduces the nonuniformity of forward voltage, by irradiating charged particles to the N-type semiconductor wafer, and generating defects in the N-layer to reduce the nonuniformity of forward voltage. In one aspect of the method, charged particles are irradiated so that a reaching positon in a depth direction or an irradiation density may differ according to the density of impurities in the N-layer in the plane view of the semiconductor wafer.
摘要翻译：提供了一种降低N型半导体晶片的正向电压Vf的不均匀性的方法，其中包括在N层中的杂质的密度在半导体晶片的平面图中不均匀地分布。该方法通过向N型半导体晶片照射带电粒子，并且在N层中产生缺陷以减小正向电压的不均匀性，从而降低正向电压的不均匀性。在该方法的一个方面，照射带电粒子，使得深度方向上的到达位置或照射密度可以根据半导体晶片的平面图中的N层中的杂质的密度而不同。

7. 发明申请

US20080226136A1 LIVING BODY GUIDANCE CONTROL METHOD FOR A BIOMETRICS AUTHENTICATION DEVICE, AND BIOMETRICS AUTHENTICATION DEVICE 有权
标题翻译：生物识别装置的生命体指导控制方法和生物识别认证装置
公开(公告)号：US20080226136A1
公开(公告)日：2008-09-18
申请号：US11854884
申请日：2007-09-13
申请人： Kazuo TAKAKU , Yasuhiko MITA , Naoko SUZUKI , Shinya IWASAKI , Masayuki YANO
发明人： Kazuo TAKAKU , Yasuhiko MITA , Naoko SUZUKI , Shinya IWASAKI , Masayuki YANO
IPC分类号： G06K9/00
CPC分类号： G07C9/00158 , G06K9/00375 , G06K9/00912 , G06K2009/00932 , G07C9/00166 , G07C2209/02
摘要： A biometrics authentication device identifies characteristics of the body from captured images of the body and performs individual authentication. The device guides a user, at the time of verification, to the image capture state at the time of registration of biometrics characteristic data. At the time of registration of biometrics characteristic data, body image capture state data is extracted from an image captured by an image capture unit and is registered in a storage unit, and at the time of verification the registered image capture state data is read from the storage unit and is compared with image capture state data extracted at the time of verification, and guidance of the body is provided. Alternatively, an outline of the body at the time of registration, taken from image capture state data at the time of registration, is displayed.
摘要翻译：生物特征认证装置从身体的捕获图像识别身体的特征并执行个体认证。该装置在验证时引导用户注册生物特征数据时的图像捕获状态。在生物识别特征数据的登记时，从图像拍摄单元拍摄的图像中提取身体图像拍摄状态数据，并将其登记在存储单元中，并且在验证时，登记图像捕获状态数据从与验证时提取的图像捕获状态数据进行比较，并提供身体的引导。或者，显示从注册时的图像拍摄状态数据取得的注册时的身体的轮廓。

8. 发明申请

US20130181254A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130181254A1
公开(公告)日：2013-07-18
申请号：US13738292
申请日：2013-01-10
申请人： Shinya IWASAKI
发明人： Shinya IWASAKI
IPC分类号： H01L29/739
CPC分类号： H01L29/7393 , H01L29/0834 , H01L29/407 , H01L29/456 , H01L29/66348 , H01L29/7397
摘要： In a semiconductor device having a semiconductor substrate on which a diode and an IGBT are formed, a cathode region of the diode and a collector region of the IGBT are formed in a range exposed to one surface of the semiconductor substrate. On the surface, a first conductor layer that is in contact with the cathode region, and a second conductor layer that is in contact with the collector region are formed. The work function of the second conductor layer is larger than the work function of the first conductor layer.
摘要翻译：在形成有二极管和IGBT的半导体衬底的半导体器件中，二极管的阴极区域和IGBT的集电极区域形成在暴露于半导体衬底的一个表面的范围内。在表面上形成与阴极区域接触的第一导体层和与集电极区域接触的第二导体层。第二导体层的功函数大于第一导体层的功函数。

9. 发明申请

US20110140243A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110140243A1
公开(公告)日：2011-06-16
申请号：US12967373
申请日：2010-12-14
申请人： Tadashi MISUMI , Shinya IWASAKI , Takahide SUGIYAMA
发明人： Tadashi MISUMI , Shinya IWASAKI , Takahide SUGIYAMA
IPC分类号： H01L29/30 , H01L21/322
CPC分类号： H01L21/02238 , H01L21/263 , H01L21/26506 , H01L29/32 , H01L29/6609 , H01L29/861 , H01L29/868 , Y10S438/92
摘要： A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底的第一主表面上的第一电极和形成在半导体衬底的第二主表面上的第二电极。半导体衬底包括其中氧空位缺陷的密度大于空位簇缺陷的密度的第一区域和空位簇缺陷的密度大于氧空位缺陷的密度的第二区域。

10. 发明申请

US20130001639A1 SEMICONDUCTOR DEVICE COMPRISING SEMICONDUCTOR SUBSTRATE HAVING DIODE REGION AND IGBT REGION 有权
标题翻译：包含二极管区域和IGBT区域的半导体衬底的半导体器件
公开(公告)号：US20130001639A1
公开(公告)日：2013-01-03
申请号：US13609868
申请日：2012-09-11
申请人： Shinya IWASAKI , Akitaka SOENO
发明人： Shinya IWASAKI , Akitaka SOENO
IPC分类号： H01L29/739 , H01L21/331
CPC分类号： H01L21/761 , H01L27/0761 , H01L29/0834 , H01L29/32 , H01L29/7397 , H01L29/861
摘要： A semiconductor device includes a semiconductor substrate in which a diode region and an IGBT region are formed, wherein a lower surface side of the semiconductor substrate comprises a low impurity region provided between a second conductivity type cathode region of the diode region and a first conductivity type collector region of the IGBT region. The low impurity region includes at least one of a first conductivity type first low impurity region which has a lower density of first conductivity type impurities than that in the collector region and a second conductivity type second low impurity region which has a lower density of second conductivity type impurities than that in the cathode region.
摘要翻译：半导体器件包括其中形成二极管区域和IGBT区域的半导体衬底，其中半导体衬底的下表面侧包括设置在二极管区域的第二导电类型阴极区域和第二导电类型之间的低杂质区域 IGBT区域的集电极区域。低杂质区域包括具有比集电极区域低的第一导电类型杂质的密度较低的第一导电类型的第一低杂质区域和具有较低密度的第二导电性的第二导电型第二低杂质区域中的至少一个类型的杂质比阴极区域。

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