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1. 发明授权

US5676758A CVD apparatus 失效
标题翻译： CVD装置
公开(公告)号：US5676758A
公开(公告)日：1997-10-14
申请号：US635492
申请日：1996-04-22
申请人： Shinya Hasegawa , Shigeru Mizuno , Kazuhito Watanabe , Nobuyuki Takahashi , Manabu Tagami , Takanori Yoshimura , Hajime Sahase
发明人： Shinya Hasegawa , Shigeru Mizuno , Kazuhito Watanabe , Nobuyuki Takahashi , Manabu Tagami , Takanori Yoshimura , Hajime Sahase
IPC分类号： C23C16/50 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/455 , C23C16/45568 , C23C16/45591 , C23C16/4583 , C23C16/509 , H01J37/3244
摘要： A CVD mechanism includes a reactor, a substrate holder, a heating apparatus for heating the substrate holder, a reaction gas supply plate for supplying reaction gas into the reactor, and at least two cylinders disposed in a concentric form on the substrate-facing surface of the reaction gas supply plate so that reaction gas is supplied from an inward portion of each cylinder in the reaction gas supply plate. A power supply mechanism for supplying power to the reaction gas supply plate and the substrate holder, and ring magnets disposed in the upper and lower portions of the reactor are provided so that magnetic lines of force passing through a plasma space are generated by the facing magnetic pole parts of the respective magnets.
摘要翻译： CVD机构包括反应器，基板保持器，用于加热基板保持器的加热装置，用于将反应气体供应到反应器中的反应气体供给板，以及至少两个以同心形式设置在圆筒形基板的表面的基板反应气体供给板，使得反应气体从反应气体供给板中的每个气缸的向内部分供给。设置用于向反应气体供给板和基板保持器供电的供电机构和设置在电抗器的上部和下部的环形磁铁，使得通过等离子体空间的磁力线由面对的磁体各个磁体的极部分。

2. 发明授权

US5624499A CVD apparatus 失效
标题翻译： CVD装置
公开(公告)号：US5624499A
公开(公告)日：1997-04-29
申请号：US634676
申请日：1996-04-18
申请人： Shigeru Mizuno , Masahito Ishihara , Manabu Tagami , Hajime Sahase , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Masahito Ishihara , Manabu Tagami , Hajime Sahase , Nobuyuki Takahashi
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/458 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4583
摘要： A CVD apparatus is equipped with a reactor, a substrate holder, an evacuation section, a reactive gas supply mechanism, a heating mechanism for heating the substrate holder, a differential pressure chuck clamping section for clamping the substrate, and a purge gas supply mechanism for supplying purge gas. The substrate holder is configured to have a circular purge gas blowing channel on the top surface thereof, in which a diameter of an outside wall-surface is less than a diameter of the substrate, and a plurality of purge gas passages in an inside thereof, each of which supplies the purge gas into the purge gas blowing channel. The purge gas passing the purge gas blowing channel is blown off through a clearance between the outer periphery of the substrate and the substrate holder. The purge gas passage includes a radius-directed part directed in a radius direction of the substrate holder and has a purge gas outlet provided on the outside wall-surface of the purge gas blowing channel. The flow of the purge gas in a circumferential direction within the purge gas blowing channel is turbulent and dispersed, and therefore the purge gas blow-off pressure in the whole periphery of the substrate is uniform.
摘要翻译： CVD装置配备有反应器，基板保持器，排气部，反应气体供给机构，用于加热基板保持件的加热机构，用于夹持基板的差压卡盘夹持部，以及用于供应吹扫气体。衬底保持器构造成在其顶表面上具有圆形吹扫气体吹送通道，其中外壁表面的直径小于衬底的直径，并且在其内部具有多个吹扫气体通道，其中的每一个将净化气体供应到净化气体吹送通道中。通过吹扫气体吹送通道的净化气体通过衬底的外周和衬底保持器之间的间隙被吹出。吹扫气体通道包括朝向衬底保持器的半径方向的半径指向部分，并且具有设置在吹扫气体吹送通道的外壁表面上的吹扫气体出口。净化气体吹送通道内的吹扫气体在圆周方向上的流动是湍流和分散的，因此衬底整个周边的吹扫气体吹出压力是均匀的。

3. 发明授权

US5956616A Method of depositing thin films by plasma-enhanced chemical vapor deposition 失效
标题翻译：通过等离子体增强化学气相沉积法沉积薄膜的方法
公开(公告)号：US5956616A
公开(公告)日：1999-09-21
申请号：US863298
申请日：1997-05-27
申请人： Shigeru Mizuno , Manabu Tagami , Shinya Hasegawa , Yoichiro Numasawa , Masahito Ishihara , Kiyoshi Nashimoto , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Manabu Tagami , Shinya Hasegawa , Yoichiro Numasawa , Masahito Ishihara , Kiyoshi Nashimoto , Nobuyuki Takahashi
IPC分类号： C23C16/34 , C23C16/42 , C23C16/50 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/28556
摘要： A method of depositing a thin film on a substrate by plasma-enhanced CVD is provided. The method includes introducing H.sub.2 or H.sub.2 and N.sub.2 into a plasma-enhanced CVD reactor; generating a plasma in the reactor; introducing a reaction gas comprising TiCl.sub.4, silane, and either H.sub.2 or H.sub.2 and N.sub.2 into the reactor; and depositing a Ti film or a TiN film containing Si on a substrate in the reactor.
摘要翻译：提供了通过等离子体增强CVD在衬底上沉积薄膜的方法。该方法包括将H2或H2和N2引入等离子体增强型CVD反应器中; 在反应器中产生等离子体; 将包含TiCl 4，硅烷，以及H 2或H 2和N 2的反应气体引入反应器中; 并在反应器中在衬底上沉积含有Si的Ti膜或TiN膜。

4. 发明授权

US5766363A Heater for CVD apparatus 失效
标题翻译： CVD装置加热器
公开(公告)号：US5766363A
公开(公告)日：1998-06-16
申请号：US634873
申请日：1996-04-19
申请人： Shigeru Mizuno , Kazuhito Watanabe , Takanori Yoshimura , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Kazuhito Watanabe , Takanori Yoshimura , Nobuyuki Takahashi
IPC分类号： H05B3/14 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4585 , C23C16/46
摘要： A heater is used in a CVD apparatus. In the CVD apparatus, reactive gas is supplied through a reactive gas supply plate to a substrate on a substrate holder to deposit a film on the substrate, and a purge gas supply passage is formed by placing a shield mechanism around the substrate holder, the shield mechanism including a ring plate disposed close to the outer periphery of the substrate. During film deposition, purge gas supplied through the purge gas supply passage is blown off from a clearance between the substrate and the ring plate, thereby preventing a film from being deposited on the rear surface of the substrate or the like. A heating element is arranged in a space in the purge gas supply passage close to but not contacting the substrate holder. The heating element is preferably a ceramic heater.
摘要翻译：在CVD装置中使用加热器。在CVD装置中，反应性气体通过反应性气体供应板供应到衬底保持器上的衬底以在衬底上沉积膜，并且通过将屏蔽机构放置在衬底保持器周围形成吹扫气体供给通道，屏蔽机构包括靠近基板的外周设置的环板。在膜沉积期间，通过吹扫气体供应通道供应的吹扫气体从基板和环板之间的间隙吹出，从而防止膜沉积在基板的后表面等上。加热元件布置在靠近但不接触衬底保持器的吹扫气体供给通道的空间中。加热元件优选为陶瓷加热器。

5. 发明授权

US6059985A Method of processing a substrate and apparatus for the method 失效
标题翻译：处理基板的方法和方法的装置
公开(公告)号：US6059985A
公开(公告)日：2000-05-09
申请号：US826735
申请日：1997-04-04
申请人： Takanori Yoshimura , Shigeru Mizuno , Shinya Hasegawa , Yoichiro Numasawa , Nobuyuki Takahashi
发明人： Takanori Yoshimura , Shigeru Mizuno , Shinya Hasegawa , Yoichiro Numasawa , Nobuyuki Takahashi
IPC分类号： H01L21/28 , H01L21/00 , H01L21/20 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/68
CPC分类号： H01L21/0209
摘要： A method of processing a substrate has the following processes. After depositing a thin film onto a substrate by a CVD method, the front surface of the substrate is brought close to a gas supply surface of a gas supply mechanism to have a desired interval without making contact between the front surface and the gas supply surface. Afterwards, an etching gas is supplied into a back space of the substrate to generate plasma there, and further a purge gas is also supplied into a space between the gas supply surface and the substrate so that the purge gas flows into the back space through a peripheral-edge region of the substrate. This purge gas prevents radicals included in the plasma from diffusing into the space between the gas supply surface and the substrate.
摘要翻译：处理基板的方法具有以下处理。在通过CVD法将薄膜沉积到基板上之后，使基板的前表面靠近气体供给机构的气体供给表面，使其具有期望的间隔而不会在前表面和气体供给表面之间接触。然后，将蚀刻气体供给到基板的后部空间中以在其中产生等离子体，并且还将吹扫气体供应到气体供给表面和基板之间的空间中，使得净化气体通过衬底的周边边缘区域。这种净化气体防止包括在等离子体中的自由基扩散到气体供应表面和基底之间的空间中。

6. 发明授权

US6129046A Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US6129046A
公开(公告)日：2000-10-10
申请号：US795348
申请日：1997-02-04
申请人： Shigeru Mizuno , Masahito Ishihara , Kazuhito Watanabe , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Masahito Ishihara , Kazuhito Watanabe , Nobuyuki Takahashi
IPC分类号： C23C14/50 , C23C16/44 , C23C16/455 , C23C16/458 , C23F4/00 , H01L21/203 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/324 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4585 , C23C16/4586
摘要： The present invention provides a substrate processing apparatus having improved temperature distribution on a block heater and improved productivity. The substrate processing apparatus includes a reactor having an exhaust unit to form a vacuum environment therein for processing a surface of a substrate, a support member provided in the reactor, and gas introduction units for introducing reactive gases into the reactor, the substrate support member including a block heater. The block heater has upper, intermediate and lower members, which are placed one over another, the faying surfaces of the respective members being joined by diffusion bonding. A heating member is provided between the intermediate and lower members, and purge gas passages are formed between the intermediate and upper members.
摘要翻译：本发明提供一种具有改进的块加热器温度分布和提高生产率的基板处理装置。基板处理装置包括具有排气单元的反应器，用于在其中形成用于处理基板的表面的真空环境，设置在反应器中的支撑构件和用于将反应气体引入反应器的气体引入单元，所述基板支撑构件包括一个块加热器。块式加热器具有一个上下放置的上部，中间和下部构件，各个构件的接合表面通过扩散接合连接。加热构件设置在中间构件和下构件之间，并且在中间构件和上构件之间形成吹扫气体通道。

7. 发明授权

US06361667B1 Ionization sputtering apparatus 失效
标题翻译：电离溅射装置
公开(公告)号：US06361667B1
公开(公告)日：2002-03-26
申请号：US09039482
申请日：1998-03-16
申请人： Masahiko Kobayashi , Hajime Sahase , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Hajime Sahase , Nobuyuki Takahashi
IPC分类号： C23C1435
CPC分类号： C23C14/345 , C23C14/35 , C23C14/351 , H01J37/3266 , H01J37/3405
摘要： This invention discloses ionization sputtering apparatuses which have a function for ionizing sputtered particles. Those apparatuses comprise an ionization means for ionizing sputtered particles from a target. The ionization means generates a plasma by applying radio frequency energy with plasma generation gas at an ionization space between the target and a holder holding a substrate. An disclosed apparatus comprises a magnetic device preventing the plasma from diffusing from the ionization space. Another disclosed apparatus comprises a magnetic device which orients the ionized sputtered particles toward the substrate.
摘要翻译：本发明公开了具有电离溅射粒子功能的电离溅射装置。这些装置包括用于从靶中电离溅射的颗粒的离子化装置。电离装置通过在靶和保持基板的保持架之间的电离空间处施加等离子体产生气体的射频能量来产生等离子体。公开的装置包括防止等离子体从电离空间扩散的磁性装置。另一公开的装置包括将离子化的溅射颗粒定向到衬底的磁性装置。

8. 发明授权

US5944968A Sputtering apparatus 失效
标题翻译：溅射装置
公开(公告)号：US5944968A
公开(公告)日：1999-08-31
申请号：US931651
申请日：1997-09-16
申请人： Masahiko Kobayashi , Masahito Ishihara , Hajime Sahase , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Masahito Ishihara , Hajime Sahase , Nobuyuki Takahashi
IPC分类号： C23C14/34 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： A sputtering apparatus is provided with a magnetic assembly which is rotated and revolved, and the eccentric distance between the rotation axis and the revolution axis is varied. By this arrangement, erosion profile of a target is made uniform, whereby a uniform thin film is deposited on a substrate surface.
摘要翻译：溅射装置设置有旋转和旋转的磁性组件，并且旋转轴和旋转轴之间的偏心距离变化。通过这种布置，使目标的侵蚀曲线均匀，由此在基板表面上沉积均匀的薄膜。

9. 发明授权

US07182122B2 Heating and cooling apparatus, and vacuum processing apparatus equipped with this apparatus 有权
公开(公告)号：US07182122B2
公开(公告)日：2007-02-27
申请号：US09906130
申请日：2001-07-17
申请人： Toshiaki Koguchi , Kazuhito Watanabe , Nobuyuki Takahashi
发明人： Toshiaki Koguchi , Kazuhito Watanabe , Nobuyuki Takahashi
IPC分类号： F25B29/00
CPC分类号： H01L21/67161 , H01L21/67109 , H01L21/67115 , H01L21/67178
摘要： A heating and cooling apparatus with which batch processing is possible and throughput can be increased, and furthermore which is more compact and uses less energy. A substrate heating chamber and a substrate cooling chamber each capable of simultaneously holding a plurality of substrates are provided in a thermally separated state in a heating and cooling apparatus with a single vacuum processing chamber. The substrate heating chamber is equipped with a plurality of communicating or non-communicating substrate holding spaces. The substrate cooling chamber is also equipped with a plurality of communicating or non-communicating substrate holding spaces. The communicating substrate holding spaces allow the batch heat treatment of substrates, while the non-communicating substrate holding spaces allow the batch or individual processing of substrates.

10. 发明授权

US5534072A Integrated module multi-chamber CVD processing system and its method for processing subtrates 失效
标题翻译：集成模块多室CVD处理系统及其处理方法
公开(公告)号：US5534072A
公开(公告)日：1996-07-09
申请号：US77687
申请日：1993-06-16
申请人： Shigeru Mizuno , Yoshihiro Katsumata , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Yoshihiro Katsumata , Nobuyuki Takahashi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/54 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/45521 , C23C16/4585 , C23C16/54 , Y10S414/135 , Y10S438/908
摘要： In a CVD processing system for depositing a blanket tungsten film, a distinct shadow is formed without causing any micro-peeling when the substrate fixture is separated from the substrate so as to prevent any blanket tungsten from being deposited on SiO.sub.2, thus reducing the occurrence of fine dust particles. A CVD processing system for depositing a blanket tungsten film, includes a susceptor (4); a ring chuck (9) for affixing the peripheral portion of a substrate (3) on the susceptor; reactive gas supply mechanisms (17, 18 and 19) for supplying reactive gas; and an exhaust mechanism (2) for exhausting unreacted gas and the like, wherein: the ring chuck has at least three point contact members (10) in contact with the peripheral portion of the substrate; the point contact members are provided at positions outside the inner periphery of the ring chuck; a gap (11) is formed at the point contact members between the ring chuck and the substrate; and purge gas supply mechanisms (20 and 21) are provided to blow off purge gas through the gap in order to prevent reactive gas from entering the gap (11). A ratio of the size of the gap to the flow rate of purge gas is set to such an optimum value as to satisfy a condition in which the position of the peripheral portion of the thin film coincides with the position of the inner periphery of the ring chuck.
摘要翻译：在用于沉积覆盖钨膜的CVD处理系统中，当衬底夹具与衬底分离时，形成不同的阴影，而不会发生任何微剥离，以防止任何覆盖的钨沉积在SiO 2上，从而减少细尘粒子。一种用于沉积覆盖钨膜的CVD处理系统，包括基座（4）; 环形卡盘（9），用于将基板（3）的周边部分固定在基座上; 用于供应反应性气体的反应气体供应机构（17,18和19）以及用于排出未反应气体等的排气机构（2），其中：所述环卡盘具有与所述基板的周边部分接触的至少三点接触构件（10）点接触构件设置在环卡盘的内周的外侧的位置; 在环卡盘和基板之间的点接触构件处形成间隙（11）; 并且提供吹扫气体供给机构（20和21）以吹扫通过间隙的吹扫气体，以防止反应性气体进入间隙（11）。将间隙尺寸与吹扫气体的流量的比率设定为最佳值，以满足薄膜的周边部分的位置与环的内周的位置一致的条件卡盘

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