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1. 发明授权

US6129046A Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US6129046A
公开(公告)日：2000-10-10
申请号：US795348
申请日：1997-02-04
申请人： Shigeru Mizuno , Masahito Ishihara , Kazuhito Watanabe , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Masahito Ishihara , Kazuhito Watanabe , Nobuyuki Takahashi
IPC分类号： C23C14/50 , C23C16/44 , C23C16/455 , C23C16/458 , C23F4/00 , H01L21/203 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/324 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4585 , C23C16/4586
摘要： The present invention provides a substrate processing apparatus having improved temperature distribution on a block heater and improved productivity. The substrate processing apparatus includes a reactor having an exhaust unit to form a vacuum environment therein for processing a surface of a substrate, a support member provided in the reactor, and gas introduction units for introducing reactive gases into the reactor, the substrate support member including a block heater. The block heater has upper, intermediate and lower members, which are placed one over another, the faying surfaces of the respective members being joined by diffusion bonding. A heating member is provided between the intermediate and lower members, and purge gas passages are formed between the intermediate and upper members.
摘要翻译：本发明提供一种具有改进的块加热器温度分布和提高生产率的基板处理装置。基板处理装置包括具有排气单元的反应器，用于在其中形成用于处理基板的表面的真空环境，设置在反应器中的支撑构件和用于将反应气体引入反应器的气体引入单元，所述基板支撑构件包括一个块加热器。块式加热器具有一个上下放置的上部，中间和下部构件，各个构件的接合表面通过扩散接合连接。加热构件设置在中间构件和下构件之间，并且在中间构件和上构件之间形成吹扫气体通道。

2. 发明授权

US5624499A CVD apparatus 失效
标题翻译： CVD装置
公开(公告)号：US5624499A
公开(公告)日：1997-04-29
申请号：US634676
申请日：1996-04-18
申请人： Shigeru Mizuno , Masahito Ishihara , Manabu Tagami , Hajime Sahase , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Masahito Ishihara , Manabu Tagami , Hajime Sahase , Nobuyuki Takahashi
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/458 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4583
摘要： A CVD apparatus is equipped with a reactor, a substrate holder, an evacuation section, a reactive gas supply mechanism, a heating mechanism for heating the substrate holder, a differential pressure chuck clamping section for clamping the substrate, and a purge gas supply mechanism for supplying purge gas. The substrate holder is configured to have a circular purge gas blowing channel on the top surface thereof, in which a diameter of an outside wall-surface is less than a diameter of the substrate, and a plurality of purge gas passages in an inside thereof, each of which supplies the purge gas into the purge gas blowing channel. The purge gas passing the purge gas blowing channel is blown off through a clearance between the outer periphery of the substrate and the substrate holder. The purge gas passage includes a radius-directed part directed in a radius direction of the substrate holder and has a purge gas outlet provided on the outside wall-surface of the purge gas blowing channel. The flow of the purge gas in a circumferential direction within the purge gas blowing channel is turbulent and dispersed, and therefore the purge gas blow-off pressure in the whole periphery of the substrate is uniform.
摘要翻译： CVD装置配备有反应器，基板保持器，排气部，反应气体供给机构，用于加热基板保持件的加热机构，用于夹持基板的差压卡盘夹持部，以及用于供应吹扫气体。衬底保持器构造成在其顶表面上具有圆形吹扫气体吹送通道，其中外壁表面的直径小于衬底的直径，并且在其内部具有多个吹扫气体通道，其中的每一个将净化气体供应到净化气体吹送通道中。通过吹扫气体吹送通道的净化气体通过衬底的外周和衬底保持器之间的间隙被吹出。吹扫气体通道包括朝向衬底保持器的半径方向的半径指向部分，并且具有设置在吹扫气体吹送通道的外壁表面上的吹扫气体出口。净化气体吹送通道内的吹扫气体在圆周方向上的流动是湍流和分散的，因此衬底整个周边的吹扫气体吹出压力是均匀的。

3. 发明授权

US6070552A Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US6070552A
公开(公告)日：2000-06-06
申请号：US022880
申请日：1998-02-12
申请人： Shigeru Mizuno , Masahito Ishihara , Yoichiro Numasawa , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Masahito Ishihara , Yoichiro Numasawa , Nobuyuki Takahashi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , C23C16/509 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/4412 , C23C16/455 , C23C16/45519 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32834 , H01J37/32862
摘要： A substrate processing device includes a reactor equipped with a substrate holder and a gas feed electrode facing the substrate holder, a pump mechanism for pumping out an interior of the reactor, a reaction gas feed mechanism for introducing a reaction gas through the gas feed electrode into the interior of said reactor, a high frequency power source for applying a high frequency power to said gas feed electrode, a connecting port formed in a sidewall of said reactor, the pump mechanism is connected to the connecting port formed in the sidewall of the reactor, and a space between the gas feed electrode and the substrate holder is set so that a conductance between the gas feed electrode and the substrate holder is lower than a conductance between the sidewall of the reactor and the gas feed electrode.
摘要翻译：基板处理装置包括装备有基板保持器和面向基板保持器的气体供给电极的反应器，用于泵出反应器内部的泵机构，用于将反应气体通过气体供给电极引入的反应气体供给机构所述反应器的内部，用于向所述气体供给电极施加高频电力的高频电源，形成在所述反应器的侧壁中的连接端口，所述泵机构连接到形成在所述反应器的侧壁中的连接端口并且设置气体供给电极和衬底保持器之间的空间，使得气体供给电极和衬底保持器之间的电导低于反应器的侧壁和气体馈送电极之间的电导。

4. 发明授权

US5956616A Method of depositing thin films by plasma-enhanced chemical vapor deposition 失效
标题翻译：通过等离子体增强化学气相沉积法沉积薄膜的方法
公开(公告)号：US5956616A
公开(公告)日：1999-09-21
申请号：US863298
申请日：1997-05-27
申请人： Shigeru Mizuno , Manabu Tagami , Shinya Hasegawa , Yoichiro Numasawa , Masahito Ishihara , Kiyoshi Nashimoto , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Manabu Tagami , Shinya Hasegawa , Yoichiro Numasawa , Masahito Ishihara , Kiyoshi Nashimoto , Nobuyuki Takahashi
IPC分类号： C23C16/34 , C23C16/42 , C23C16/50 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/28556
摘要： A method of depositing a thin film on a substrate by plasma-enhanced CVD is provided. The method includes introducing H.sub.2 or H.sub.2 and N.sub.2 into a plasma-enhanced CVD reactor; generating a plasma in the reactor; introducing a reaction gas comprising TiCl.sub.4, silane, and either H.sub.2 or H.sub.2 and N.sub.2 into the reactor; and depositing a Ti film or a TiN film containing Si on a substrate in the reactor.
摘要翻译：提供了通过等离子体增强CVD在衬底上沉积薄膜的方法。该方法包括将H2或H2和N2引入等离子体增强型CVD反应器中; 在反应器中产生等离子体; 将包含TiCl 4，硅烷，以及H 2或H 2和N 2的反应气体引入反应器中; 并在反应器中在衬底上沉积含有Si的Ti膜或TiN膜。

5. 发明授权

US07791857B2 Electrostatic chuck device 有权
公开(公告)号：US07791857B2
公开(公告)日：2010-09-07
申请号：US12318488
申请日：2008-12-30
申请人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
发明人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
IPC分类号： H01T23/00
CPC分类号： H01L21/6875 , H01L21/6833 , H02N13/00
摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.

6. 发明授权

US07623334B2 Electrostatic chuck device 有权
标题翻译：静电吸盘装置
公开(公告)号：US07623334B2
公开(公告)日：2009-11-24
申请号：US10462765
申请日：2003-06-17
申请人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
发明人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
IPC分类号： H01T23/00
CPC分类号： H01L21/6875 , H01L21/6833 , H02N13/00
摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.
摘要翻译：一种静电吸盘装置，其具有表面压花的电介质板，以给予多个突起，电极和外部电源，其中所述多个突起的基板支撑表面被导体布线覆盖，并且所述导体布线电连接多个突起的基板支撑表面。在基板处理时，当压花突起接触基板的背面时，由于电荷的迁移，基板的背面和导体布线的潜力也相同，因此在基板和与其接触的导体布线被防止，并且防止了两者之间的摩擦状态。由此，静电卡盘装置减少了颗粒的产生，容易且稳定地除去和输送基板，实现了高产率和系统运行速度。

7. 发明申请

US20090122459A1 Electrostatic chuck device 有权
公开(公告)号：US20090122459A1
公开(公告)日：2009-05-14
申请号：US12318488
申请日：2008-12-30
申请人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
发明人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
IPC分类号： H01L21/683
CPC分类号： H01L21/6875 , H01L21/6833 , H02N13/00
摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.

8. 发明授权

US07724493B2 Electrostatic chuck device 有权
标题翻译：静电吸盘装置
公开(公告)号：US07724493B2
公开(公告)日：2010-05-25
申请号：US12289207
申请日：2008-10-22
申请人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
发明人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
IPC分类号： H01T23/001
CPC分类号： H01L21/6875 , H01L21/6833 , H02N13/00
摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.
摘要翻译：一种静电吸盘装置，其具有表面压花的电介质板，以给予多个突起，电极和外部电源，其中所述多个突起的基板支撑表面被导体布线覆盖，并且所述导体布线电连接多个突起的基板支撑表面。在基板处理时，当压花突起接触基板的背面时，由于电荷的迁移，基板的背面和导体布线的潜力也相同，因此在基板和与其接触的导体布线被防止，并且防止了两者之间的摩擦状态。由此，静电卡盘装置减少了颗粒的产生，容易且稳定地除去和输送基板，实现了高产率和系统运行速度。

9. 发明申请

US20100046134A1 Electrostatic chuck device 有权
公开(公告)号：US20100046134A1
公开(公告)日：2010-02-25
申请号：US12588809
申请日：2009-10-28
申请人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
发明人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
IPC分类号： H01L21/683
CPC分类号： H01L21/6875 , H01L21/6833 , H02N13/00
摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.

10. 发明申请

US20060158823A1 Electrostatic chuck device 审中-公开
公开(公告)号：US20060158823A1
公开(公告)日：2006-07-20
申请号：US11370893
申请日：2006-03-09
申请人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
发明人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
IPC分类号： H01L21/683
CPC分类号： H01L21/6875 , H01L21/6833 , H02N13/00
摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.

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