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1. 发明申请

US20120202906A1 POLYTETRAFLUOROETHYLENE AQUEOUS EMULSION AND PROCESS FOR ITS PRODUCTION, POLYTETRAFLUOROETHYLENE AQUEOUS DISPERSION OBTAINABLE BY USING SUCH AN AQUEOUS EMULSION, POLYTETRAFLUOROETHYLENE FINE POWDER, AND STRETCHED POROUS MATERIAL 有权
标题翻译：聚四氟乙烯水性乳液及其制备方法，使用这种水性乳液，聚四氟乙烯微粉和拉伸多孔材料可获得的聚四氟乙烯均匀分散体
公开(公告)号：US20120202906A1
公开(公告)日：2012-08-09
申请号：US13447803
申请日：2012-04-16
申请人： Shinya HIGUCHI , Yasuhiko MATSUOKA , Shigeki KOBAYASHI
发明人： Shinya HIGUCHI , Yasuhiko MATSUOKA , Shigeki KOBAYASHI
IPC分类号： C08L27/18 , C08K5/095
CPC分类号： C08F214/26 , C08F14/26 , C08J3/03 , C08J2327/18 , C08F2/24
摘要： To produce a PTFE aqueous emulsion, whereby the environmental load is little, the stability of the aqueous emulsion is high, and a molded product having high heat resistance can be obtained. A process for producing a PTFE aqueous emulsion, which comprises emulsion-polymerizing tetrafluoroethylene (TFE) by means of at least one fluorinated emulsifier selected from the group consisting of a C4-8 fluorinated carboxylic acid having from 1 to 4 etheric oxygen atoms in its main chain, and its salts, to obtain an aqueous emulsion containing polytetrafluoroethylene (PTFE) microparticles having an average primary particle size of from 0.1 to 0.3 μm, wherein at the beginning of the emulsion polymerization of TFE, a (polyfluoroalkyl)ethylene (a) represented by “CH2═CH—Rf1”, and/or a comonomer (b) having a monomer reactivity ratio rTFE of from 0.1 to 8 in copolymerization with tetrafluoroethylene, is incorporated to the emulsion polymerization system, so as to be from 0.001 to 0.01 mass % relative to the final amount of polytetrafluoroethylene produced.
摘要翻译：为了制造PTFE水性乳液，由于环境负荷少，水性乳液的稳定性高，因此可以得到耐热性高的成型体。一种PTFE水性乳液的制造方法，其特征在于，含有至少一种氟化乳化剂使四氟乙烯（TFE）进行乳液聚合，所述氟化乳化剂选自在其主体中具有1〜4个醚性氧原子的C4-8含氟羧酸链和其盐，得到含有平均一次粒径为0.1〜0.3μm的聚四氟乙烯（PTFE）微粒的水性乳液，其中，在TFE的乳液聚合开始时，以（多氟烷基）乙烯（a）为代表的通过“CH2 = CH-Rf1”和/或与四氟乙烯共聚的单体反应性比rTFE为0.1〜8的共聚单体（b）引入到乳液聚合体系中，为0.001〜0.01质量％相对于所生产的聚四氟乙烯的最终量。

2. 发明申请

US20110021728A1 METHOD FOR PRODUCING POLYTETRAFLUOROETHYLENE FINE POWDER 有权
标题翻译：生产聚四氟乙烯微粉的方法
公开(公告)号：US20110021728A1
公开(公告)日：2011-01-27
申请号：US12891867
申请日：2010-09-28
申请人： Shinya HIGUCHI , Yasuhiko MATSUOKA , Shigeki KOBAYASHI
发明人： Shinya HIGUCHI , Yasuhiko MATSUOKA , Shigeki KOBAYASHI
IPC分类号： C08F214/26 , C08F2/22
CPC分类号： C08F2/22 , C08F14/26 , C08F114/26 , C08F2/24
摘要： To provide a method for producing a PTFE fine powder which can produce a PTFE fine powder having a low paste extrusion pressure property by a simple method.In the presence of an aqueous medium, a fluorinated surfactant and a radical polymerization initiator, tetrafluoroethylene is subjected to emulsion polymerization to produce an aqueous polytetrafluoroethylene and the aqueous medium is mixed and coagulated to separate a polytetrafluoroethylene fine powder, and then the polytetrafluoroethylene fine powder in a wet state is dried in an atmosphere containing ammonia to produce the polytetrafluoroethylene fine powder.
摘要翻译：提供一种能够通过简单的方法制造具有低糊状挤出压力特性的PTFE细粉的PTFE细粉的制造方法。在水性介质，氟化表面活性剂和自由基聚合引发剂的存在下，将四氟乙烯进行乳液聚合以制备聚四氟乙烯水溶液，并将水性介质混合并凝结以分离聚四氟乙烯细粉末，然后将聚四氟乙烯细粉末将湿状态在含有氨的气氛中干燥以制备聚四氟乙烯细粉末。

3. 发明申请

US20120217461A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20120217461A1
公开(公告)日：2012-08-30
申请号：US13404795
申请日：2012-02-24
申请人： Shigeki KOBAYASHI , Takashi Shigeoka , Mitsuru Sato , Takahiro Hirai , Katsuyuki Sekine , Kazuya Kinoshita , Soichi Yamazaki , Ryota Fujitsuka , Kensuke Takahashi , Yasuhiro Nojiri , Masaki Yamato , Hiroyuki Fukumizu , Takeshi Yamaguchi
发明人： Shigeki KOBAYASHI , Takashi Shigeoka , Mitsuru Sato , Takahiro Hirai , Katsuyuki Sekine , Kazuya Kinoshita , Soichi Yamazaki , Ryota Fujitsuka , Kensuke Takahashi , Yasuhiro Nojiri , Masaki Yamato , Hiroyuki Fukumizu , Takeshi Yamaguchi
IPC分类号： H01L45/00 , H01L21/8239 , B82Y99/00
CPC分类号： H01L27/2409 , B82Y10/00 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1608
摘要： A semiconductor memory device according to an embodiment includes: first lines provided on a substrate; second lines provided between the first lines and the substrate so as to intersect the first lines; and a first memory cell array including first memory cells, each of the first memory cells being provided at respective intersections of the first lines and the second lines and including a current rectifying element and a variable resistor connected in series. The variable resistor of the first memory cell includes a first recording layer and a second recording layer, the first recording layer being made of an oxide of a first metal material, the second recording layer being made of the first metal material and being formed so as to contact with the first recording layer. The second recording layer is closer to the first line than the first recording layer is.
摘要翻译：根据实施例的半导体存储器件包括：设置在基板上的第一线; 设置在第一线和基板之间以与第一线相交的第二线; 以及包括第一存储单元的第一存储单元阵列，每个第一存储单元设置在第一行和第二行的相应交点处，并且包括串联连接的电流整流元件和可变电阻器。第一存储单元的可变电阻器包括第一记录层和第二记录层，第一记录层由第一金属材料的氧化物制成，第二记录层由第一金属材料制成并形成为与第一记录层接触。第二记录层比第一记录层更靠近第一行。

4. 发明申请

US20090309646A1 RANDOM NUMBER GENERATION DEVICE 审中-公开
标题翻译：随机数生成装置
公开(公告)号：US20090309646A1
公开(公告)日：2009-12-17
申请号：US12391640
申请日：2009-02-24
申请人： Shigeki KOBAYASHI , Ken Uchida , Shinobu Fujita , Tetsufumi Tanamoto
发明人： Shigeki KOBAYASHI , Ken Uchida , Shinobu Fujita , Tetsufumi Tanamoto
IPC分类号： G06G7/12 , H01L27/088
CPC分类号： H01L29/1054 , G06F7/588 , H01L21/823807 , H01L27/088 , H01L29/7843 , H03K3/84
摘要： A random number generation device includes: a first source region; a first drain region; a first channel region provided between the first source region and the first drain region; a first insulating film provided on the first channel region; and a first gate electrode provided on the first insulating film. The first insulating film has a trap capturing and releasing a charge, and a tensile or compressive stress is applied in a direction of a gate length to at least one of the first channel region and the first insulating film.
摘要翻译：随机数生成装置包括：第一源区域; 第一漏区; 设置在所述第一源极区域和所述第一漏极区域之间的第一沟道区域; 设置在所述第一沟道区上的第一绝缘膜; 以及设置在第一绝缘膜上的第一栅电极。第一绝缘膜具有陷阱捕获和释放电荷，并且在栅极长度方向上向第一沟道区和第一绝缘膜中的至少一个施加拉伸或压缩应力。

5. 发明申请

US20110235395A1 SEMICONDUCTOR MEMORY DEVICE AND WRITING METHOD THEREOF 有权
标题翻译：半导体存储器件及其写入方法
公开(公告)号：US20110235395A1
公开(公告)日：2011-09-29
申请号：US13043923
申请日：2011-03-09
申请人： Shigeki KOBAYASHI , Kazuhiko Yamamoto
发明人： Shigeki KOBAYASHI , Kazuhiko Yamamoto
IPC分类号： G11C11/34
CPC分类号： G11C16/0466 , G11C16/10 , G11C16/3418
摘要： A memory cell array includes memory transistors each including a gate insulating film formed on a semiconductor substrate, a gate electrode formed on the gate insulating film, and a variable resistance film formed on the gate electrode and made of a variable resistance material having variable resistance and is configured by plural memory strings disposed with longer direction extending in a first direction and including plural series-connected memory transistors. Word lines are disposed with a longer direction extending in a second direction orthogonal to the first direction, and connected commonly to the gate electrodes of the plural memory transistors lined up in the second direction. A plate line is disposed to sandwich the variable resistance film with the gate electrode. First voltage terminals supply a certain voltage to first ends of the plural memory strings. Second voltage terminals supply a certain voltage to second ends of the plural memory strings.
摘要翻译：存储单元阵列包括存储晶体管，每个存储晶体管包括形成在半导体衬底上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极和形成在栅极上的可变电阻膜，并且由可变电阻材料制成，由沿着第一方向延伸的包括多个串联存储晶体管的长方向布置的多个存储器串构成。字线沿着与第一方向正交的第二方向延伸的较长方向布置，并且共同连接到沿第二方向排列的多个存储晶体管的栅电极。设置板线以与栅电极夹住可变电阻膜。第一电压端子向多个存储器串的第一端提供一定电压。第二电压端子向多个存储器串的第二端提供一定电压。

6. 发明申请

US20130182488A1 NON-VOLATILE SEMICONDUCTOR MEMORY AND DATA PROCESSING METHOD IN NON-VOLATILE SEMICONDUCTOR MEMORY 有权
标题翻译：非易失性半导体存储器中的非易失性半导体存储器和数据处理方法
公开(公告)号：US20130182488A1
公开(公告)日：2013-07-18
申请号：US13544412
申请日：2012-07-09
申请人： Shigeki KOBAYASHI , Hideyuki Tabata
发明人： Shigeki KOBAYASHI , Hideyuki Tabata
IPC分类号： G11C13/00 , G11C7/00
CPC分类号： G06F11/1012 , B82Y10/00 , G06F11/10 , G06F11/1008 , G11C7/00 , G11C13/0002 , G11C13/0014 , G11C13/004 , G11C13/0069 , G11C13/025 , G11C2029/0411 , G11C2213/35 , G11C2213/72
摘要： A non-volatile semiconductor memory according to an embodiment includes: a data storage unit including a memory cell array and a writing circuit; an encoder that directs the writing circuit to write write data to the memory cell array; a writing determining circuit that determines whether the writing of the write data to the memory cell array within a predetermined number of writing operations fails or succeeds, inverts the write data to generate new write data when the writing of the write data fails, and directs the writing circuit to write the new write data to the memory cell array; a switching circuit that inverts read data which is read from the memory cell to generate new read data when the writing determining circuit determines that the writing of the write data fails; and a decoder that decodes the read data into the information data.
摘要翻译：根据实施例的非易失性半导体存储器包括：包括存储单元阵列和写入电路的数据存储单元; 引导写入电路将写数据写入存储单元阵列的编码器; 写入确定电路，其确定在预定数量的写入操作中写入数据到存储器单元阵列的写入是否失败，当写入数据的写入失败时，反转写入数据以产生新的写入数据，并指示写入电路将新写入数据写入存储单元阵列; 切换电路，当写入确定电路确定写入数据的写入失败时，反转从存储器单元读取的读取数据以产生新的读取数据; 以及将读取的数据解码为信息数据的解码器。

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