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    • 8. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US08791521B2
    • 2014-07-29
    • US13423664
    • 2012-03-19
    • Koji NakaharaKazuhiro MatsuoMasayuki TanakaHirofumi Iikawa
    • Koji NakaharaKazuhiro MatsuoMasayuki TanakaHirofumi Iikawa
    • H01L29/788
    • H01L27/11521H01L29/42324H01L29/7881
    • A semiconductor device includes an interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface of an element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a first stack including a first silicon nitride film or a high dielectric constant film interposed between a first and a second silicon oxide film or a second stack including a second high dielectric constant film and a third silicon oxide film, and a second silicon nitride film formed between the control electrode layer and the first or the second stack. The second silicon nitride film is relatively thinner in the third region than in the first region.
    • 半导体器件包括在电荷存储层和控制电极层之间形成的电极间绝缘膜。 电极间绝缘膜形成在元件隔离绝缘膜的上表面上方的第一区域,沿着电荷存储层的侧壁的第二区域和电荷存储层的上表面上方的第三区域。 电极间绝缘膜包括:第一堆叠,其包括介于第一和第二氧化硅膜之间的第一氮化硅膜或高介电常数膜,或包括第二高介电常数膜和第三氧化硅膜的第二堆叠, 形成在控制电极层和第一或第二堆叠之间的第二氮化硅膜。 在第三区域中,第二氮化硅膜比第一区域相对薄。