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    • 4. 发明授权
    • Solid-state imaging element
    • 固态成像元件
    • US08093635B2
    • 2012-01-10
    • US12076792
    • 2008-03-24
    • Hideo KidoKazuichiro ItonagaKai YoshitsuguKenichi Chiba
    • Hideo KidoKazuichiro ItonagaKai YoshitsuguKenichi Chiba
    • H01L31/113
    • H01L27/14689H01L31/0224
    • There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.
    • 提供了一种固态成像元件,其具有通过光照射产生电荷的光接收部分和形成在半导体层中的晶体管的源极/漏极区域。 固体摄像元件包括:包含光接收部分的非硅化区域,其中源极/漏极区域和晶体管的栅电极的表面不被硅化; 以及其中晶体管的源极/漏极区域和栅极电极的表面被硅化的硅化区域。 非硅化区域具有形成在晶体管的栅电极的侧表面上的侧壁,形成为覆盖半导体层,栅极电极和侧壁的氢供应膜,以及形成在氢源上的自对准硅化物阻挡膜 电影防止硅化。 硅化区具有形成在晶体管的栅电极的侧表面上的侧壁。