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    • 4. 发明授权
    • Thin film piezoelectric element
    • 薄膜压电元件
    • US06900579B2
    • 2005-05-31
    • US10333705
    • 2001-07-23
    • Isaku KannoShintarou HaraTakanori Nakano
    • Isaku KannoShintarou HaraTakanori Nakano
    • H01L41/187H01L41/22H01L41/24H01L41/316H02N2/00H01L41/18
    • H01L41/1876H01L41/0973H01L41/316
    • To provide a piezoelectric thin film having an improved and stable characteristic by controlling stress applied during forming a piezoelectric thin film and providing the piezoelectric thin film having a perovskite structure. A thin film piezoelectric element in which a lower electrode is formed on a substrate, a piezoelectric thin film containing lead is formed on the lower electrode, and an upper electrode is further placed on the piezoelectric thin film, characterized in that the piezoelectric thin film is a dielectric with the perovskite structure having lead, zirconium, and titanium as the main ingredients, and is in a composition region in which, in the composition of the whole piezoelectric thin film, the. Zr/(Zr+Ti) ratio is not less than substantially 0.53, and has a crystal structure of the tetragonal system in which a c axis is longer than an a axis.
    • 通过控制在形成压电薄膜期间施加的应力并提供具有钙钛矿结构的压电薄膜来提供具有改善和稳定特性的压电薄膜。 一种在基板上形成下电极的薄膜压电元件,在下电极上形成含有铅的压电薄膜,并且还将上电极放置在压电薄膜上,其特征在于,压电薄膜为 具有以铅,锆和钛为主要成分的钙钛矿结构的电介质,并且在整个压电薄膜的组成中的组成区域中。 Zr /(Zr + Ti)比不小于0.53,并且具有c轴长于轴的四方晶系的晶体结构。