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    • 2. 发明授权
    • Plasma processing method
    • 等离子体处理方法
    • US5945353A
    • 1999-08-31
    • US942119
    • 1997-10-01
    • Junichiro HashizumeShigenori UedaShinji Tsuchida
    • Junichiro HashizumeShigenori UedaShinji Tsuchida
    • C23C16/24C23C16/50C23C16/509H01J37/32H01L21/205H01L21/302
    • H01J37/32082
    • In a plasma processing method and apparatus for carrying out plasma processing by supplying a high-frequency power of 20 MHz to 450 MHz to cause discharge to take place between a first electrode serving also as a film forming substrate and a second electrode provided so as to surround the first electrode, the high-frequency power is supplied from its power source to the second electrode at two points at least. In plasma processing apparatuses as typified by plasma CVD apparatuses to which the high-frequency power of a frequency from 20 MHz to 450 MHz is supplied, this method and apparatus can effectively decrease unevenness in plasma processing in the peripheral direction of the film formed, can promise a high plasma processing rate and can improve the characteristics of a deposited film during deposited film formation.
    • 在通过提供20MHz至450MHz的高频功率进行等离子体处理的等离子体处理方法和装置中,在也用作成膜基板的第一电极和第二电极之间发生放电, 围绕第一电极,至少在两点将高频电力从其电源提供给第二电极。 在等离子体处理装置中,以等离子体CVD装置为代表,其中提供了频率为20MHz至450MHz的高频功率,该方法和装置可以有效地降低等离子体处理在成膜的周向方向上的不均匀性, 承诺了高等离子体处理速度,并且可以在沉积膜形成期间改善沉积膜的特性。
    • 6. 发明授权
    • Plasma processing apparatus
    • 等离子体处理装置
    • US5718769A
    • 1998-02-17
    • US404496
    • 1995-03-17
    • Junichiro HashizumeShigenori UedaShinji Tsuchida
    • Junichiro HashizumeShigenori UedaShinji Tsuchida
    • C23C16/24C23C16/50C23C16/509H01J37/32H01L21/205H01L21/302C23C16/00
    • H01J37/32082
    • In a plasma processing method and apparatus for carrying out plasma processing by supplying a high-frequency power of 20 MHz to 450 MHz to cause discharge to take place between a first electrode serving also as a film forming substrate and a second electrode provided so as to surround the first electrode, the high-frequency power is supplied from its power source to the second electrode at two points at least. In plasma processing apparatuses as typified by plasma CVD apparatuses to which the high-frequency power of a frequency from 20 MHz to 450 MHz is supplied, this method and apparatus can effectively decrease unevenness is plasma processing in the peripheral direction of the film formed, can promise a high plasma processing rate and can improve the characteristics of a deposited film during deposited film formation.
    • 在通过提供20MHz至450MHz的高频功率进行等离子体处理的等离子体处理方法和装置中,在也用作成膜基板的第一电极和第二电极之间发生放电, 围绕第一电极,至少在两点将高频电力从其电源提供给第二电极。 在以等离子体CVD装置为代表的等离子体处理装置中,通过提供20MHz〜450MHz频率的高频功率,该方法和装置可以有效地减少不均匀性,是形成膜的周向的等离子体处理 承诺了高等离子体处理速度,并且可以在沉积膜形成期间改善沉积膜的特性。
    • 7. 发明授权
    • Plasma processing apparatus
    • 等离子体处理装置
    • US5558719A
    • 1996-09-24
    • US421255
    • 1995-04-13
    • Shinji TsuchidaShigenori UedaJunichiro Hashizume
    • Shinji TsuchidaShigenori UedaJunichiro Hashizume
    • H05H1/46C23C16/50H01J37/32C23C16/00
    • H01J37/32009H01J37/32082H01J37/32541H01J37/3255
    • A plasma processing apparatus has a cathode electrode surrounding a target film formation base set in a deposition apparatus capable of pressure reduction and arranged parallel to the target film formation base. In the plasma processing apparatus, a plasma is generated between the cathode electrode and the target film formation base by applying an RF power having a discharge frequency of 20 MHz to 450 MHz to the cathode electrode. In the plasma processing apparatus, the cathode electrode is constituted by one metal material portion and at least two dielectric portions arranged at positions to sandwich the metal material portion, and a ratio (L.sub.1 /L.sub.2) of a size (L.sub.1) of the metal material portion of the cathode electrode in an axial direction to a size (L.sub.2) of the target film formation base in the axial direction falls within a range of 0.1 to 0.45. With the plasma processing apparatus, instability and nonuniformity in plasma discharge are prevented to eliminate nonuniformity in film thickness and film quality, and a film having good characteristics is formed on a relatively large target film formation base at a high deposition speed to realize efficiency of productivity and a decrease in cost.
    • 等离子体处理装置具有围绕设置在能够减压并与靶成膜基底平行布置的沉积设备中的靶成膜基底的阴极电极。 在等离子体处理装置中,通过向阴极施加放电频率为20MHz〜450MHz的RF电力,在阴极电极与目标成膜基体之间产生等离子体。 在等离子体处理装置中,阴极由一个金属材料部分和至少两个布置在夹着金属材料部分的位置处的电介质部分构成,并且金属材料的尺寸(L1)的比率(L1 / L2) 阴极电极在轴向上的距离与目标成膜基材的轴向尺寸(L2)的比例落在0.1〜0.45的范围内。 利用等离子体处理装置,可以防止等离子体放电的不稳定性和不均匀性,以消除膜厚度和膜质量的不均匀性,并且在相对大的目标成膜基底上以高沉积速度形成具有良好特性的膜以实现生产率 并降低成本。
    • 8. 发明授权
    • Electrophotographic photosensitive member having surface of non-monocrystalline carbon with controlled wear loss
    • 具有非单晶碳表面的电子照相感光构件具有受控的磨损损失
    • US06183930B2
    • 2001-02-06
    • US09218632
    • 1998-12-22
    • Shigenori UedaJunichiro HashizumeMakoto Aoki
    • Shigenori UedaJunichiro HashizumeMakoto Aoki
    • G03G2100
    • G03G21/0017G03G5/08285G03G5/14704
    • For stably obtaining high-quality images with good cleaning properties, with neither occurrence of uneven scraping of a surface layer of a light receiving member nor fusion of a toner, and without occurrence of an image defect even without provision of a heater, the wear loss of the surface layer of a non-monocrystalline hydrogenated carbon film is made not less than 1 Å/10,000 sheets nor more than 10 Å/10,000 sheets after completion of copying processes of A4-size transfer sheets, each copying process including developing an image on a light receiving member with a developer having an average grain diameter of 5 to 8 &mgr;m, then transferring the developer image onto a transfer medium, and thereafter scrape-cleaning the surface of the light receiving member with an elastic rubber blade having the hardness of not less than 70 nor more than 80.
    • 为了稳定地获得具有良好清洁性能的高质量图像,即使没有加热器也不会发生光接收部件的表面层的不均匀刮擦,也不会发生调色剂的熔融,并且即使没有加热器也不会发生图像缺陷,磨损 的非单晶氢化碳膜的表面层在A4尺寸转印纸的复印过程完成之后不小于1 / 10,000张,不大于10埃/ 10,000张,每个复印过程包括显影图像 具有平均粒径为5〜8μm的显影剂的光接收元件,然后将显影剂图像转印到转印介质上,然后用硬度不高的弹性橡胶刮刀刮擦光接收元件的表面 小于70,不超过80。