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1. 发明授权

US06280895B1 Light-receiving member with outer layer made by alternatively forming and etching 有权
标题翻译：具有通过交替形成和蚀刻制成的外层的光接收构件
公开(公告)号：US06280895B1
公开(公告)日：2001-08-28
申请号：US09361804
申请日：1999-07-27
申请人： Shigenori Ueda , Junichiro Hashizume , Makoto Aoki , Shinji Tsuchida
发明人： Shigenori Ueda , Junichiro Hashizume , Makoto Aoki , Shinji Tsuchida
IPC分类号： G03G1504
CPC分类号： C23C16/44 , G03G5/08235 , G03G5/08264 , G03G5/08278
摘要： In a reactor capable of reducing an internal pressure thereof, a non-single-crystalline material layer containing at least one kind of carbon atoms, hydrogen atoms or nitrogen atoms is formed and etched on a non-single-crystalline photoconductive layer mainly composed of silicon atoms, formed on a substrate, under application of a high-frequency power of 50 MHz to 450 MHz, and the formation and the etching are alternately repeated plural times to form a surface layer. A light-receiving member having such a surface layer does not damage cleaning performance over a long period of time, hardly allows adhesion of corona discharge products, and can be free from faint images, smeared images and uneven image density even if no heating means for the drum is provided.
摘要翻译：在能够降低其内部压力的反应器中，形成含有至少一种碳原子，氢原子或氮原子的非单晶材料层，并在主要由硅构成的非单晶光电导层上进行蚀刻原子，形成在基板上，在施加50MHz至450MHz的高频功率下，并且形成和蚀刻交替重复多次以形成表面层。具有这种表面层的光接收元件不会长时间损坏清洁性能，即使没有提供用于鼓的加热装置，几乎不允许电晕放电产物的粘附，并且可以没有微弱的图像，模糊图像和不均匀的图像密度。

2. 发明授权

US5958644A Process to form light-receiving member with outer layer made by alternately forming and etching 失效
标题翻译：通过交替成形和蚀刻形成外层的光接收元件的工艺
公开(公告)号：US5958644A
公开(公告)日：1999-09-28
申请号：US637188
申请日：1996-04-24
申请人： Shigenori Ueda , Junichiro Hashizume , Makoto Aoki , Shinji Tsuchida
发明人： Shigenori Ueda , Junichiro Hashizume , Makoto Aoki , Shinji Tsuchida
IPC分类号： G03G5/08 , C23C16/44 , C23F4/00 , G03G5/082 , H01L21/302 , H01L21/3065 , H01L31/08 , G03G5/00
CPC分类号： C23C16/44 , G03G5/08235 , G03G5/08264 , G03G5/08278
摘要： In a reactor capable of reducing an internal pressure thereof, a non-single-crystalline material layer containing at least one kind of carbon atoms, hydrogen atoms or nitrogen atoms is formed and etched on a non-single-crystalline photoconductive layer mainly composed of silicon atoms, formed on a substrate, under application of a high-frequency power of 50 MHz to 450 MHz, and the formation and the etching are alternately repeated plural times to form a surface layer.A light-receiving member having such a surface layer does not damage cleaning performance over a long period of time, hardly allows adhesion of corona discharge products, and can be free from faint images, smeared images and uneven image density even if no heating means for the drum is provided.
摘要翻译：在能够降低其内部压力的反应器中，形成含有至少一种碳原子，氢原子或氮原子的非单晶材料层，并在主要由硅构成的非单晶光电导层上进行蚀刻原子，在50MHz〜450MHz的高频功率下，在基板上形成，并且形成和蚀刻交替重复多次以形成表面层。具有这种表面层的光接收部件长时间不损坏清洗性能，几乎不能使电晕放电产物附着，并且即使没有加热装置，也不会产生微弱的图像，模糊图像和不均匀的图像浓度提供鼓。

3. 发明授权

US5849455A Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US5849455A
公开(公告)日：1998-12-15
申请号：US571784
申请日：1995-12-13
申请人： Shigenori Ueda , Junichiro Hashizume , Shinji Tsuchida
发明人： Shigenori Ueda , Junichiro Hashizume , Shinji Tsuchida
IPC分类号： G03G5/08 , C23C16/24 , C23C16/50 , C23C16/509 , H01J37/32 , H01L21/205 , G03G5/00 , A01K15/04 , A61D3/00 , H05H1/02
CPC分类号： H01J37/32082 , C23C16/509 , C23C16/5093 , G03G5/08214 , G03G5/08278 , H01J37/32706
摘要： A plasma processing method and a plasma processing apparatus are provided in which a deposition film is formed, on a substrate serving also as an electrode, by application of high frequency power ranging from 20 MHz to 450 MHz with simultaneous application of DC voltage ranging from 30 to 300 V or -30 to -300 V and/or AC voltage ranging from 30 to 600 V to the substrate in an evacuatable reaction chamber. This method make it practicable to uniformize the plasma and the film thickness distribution independently of the discharge frequency and the applied high frequency power, thereby broadening the allowable range of conditions of the processing such as film formation and the allowable range of the design of the apparatus.
摘要翻译：提供一种等离子体处理方法和等离子体处理装置，其中通过施加20MHz至450MHz的高频功率，在同时作为电极的基板上形成沉积膜，同时施加30V的直流电压在可抽空的反应室中至300V或-30至-300V和/或AC至30V至600V的电压。该方法使得等离子体的均匀化和膜厚分布与喷射频率和施加的高频功率无关，从而扩大了成膜的处理条件的允许范围和设备的允许范围。

4. 发明授权

US5718769A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5718769A
公开(公告)日：1998-02-17
申请号：US404496
申请日：1995-03-17
申请人： Junichiro Hashizume , Shigenori Ueda , Shinji Tsuchida
发明人： Junichiro Hashizume , Shigenori Ueda , Shinji Tsuchida
IPC分类号： C23C16/24 , C23C16/50 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/302 , C23C16/00
CPC分类号： H01J37/32082
摘要： In a plasma processing method and apparatus for carrying out plasma processing by supplying a high-frequency power of 20 MHz to 450 MHz to cause discharge to take place between a first electrode serving also as a film forming substrate and a second electrode provided so as to surround the first electrode, the high-frequency power is supplied from its power source to the second electrode at two points at least. In plasma processing apparatuses as typified by plasma CVD apparatuses to which the high-frequency power of a frequency from 20 MHz to 450 MHz is supplied, this method and apparatus can effectively decrease unevenness is plasma processing in the peripheral direction of the film formed, can promise a high plasma processing rate and can improve the characteristics of a deposited film during deposited film formation.
摘要翻译：在通过提供20MHz至450MHz的高频功率进行等离子体处理的等离子体处理方法和装置中，在也用作成膜基板的第一电极和第二电极之间发生放电，围绕第一电极，至少在两点将高频电力从其电源提供给第二电极。在以等离子体CVD装置为代表的等离子体处理装置中，通过提供20MHz〜450MHz频率的高频功率，该方法和装置可以有效地减少不均匀性，是形成膜的周向的等离子体处理承诺了高等离子体处理速度，并且可以在沉积膜形成期间改善沉积膜的特性。

5. 发明授权

US5558719A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5558719A
公开(公告)日：1996-09-24
申请号：US421255
申请日：1995-04-13
申请人： Shinji Tsuchida , Shigenori Ueda , Junichiro Hashizume
发明人： Shinji Tsuchida , Shigenori Ueda , Junichiro Hashizume
IPC分类号： H05H1/46 , C23C16/50 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32541 , H01J37/3255
摘要： A plasma processing apparatus has a cathode electrode surrounding a target film formation base set in a deposition apparatus capable of pressure reduction and arranged parallel to the target film formation base. In the plasma processing apparatus, a plasma is generated between the cathode electrode and the target film formation base by applying an RF power having a discharge frequency of 20 MHz to 450 MHz to the cathode electrode. In the plasma processing apparatus, the cathode electrode is constituted by one metal material portion and at least two dielectric portions arranged at positions to sandwich the metal material portion, and a ratio (L.sub.1 /L.sub.2) of a size (L.sub.1) of the metal material portion of the cathode electrode in an axial direction to a size (L.sub.2) of the target film formation base in the axial direction falls within a range of 0.1 to 0.45. With the plasma processing apparatus, instability and nonuniformity in plasma discharge are prevented to eliminate nonuniformity in film thickness and film quality, and a film having good characteristics is formed on a relatively large target film formation base at a high deposition speed to realize efficiency of productivity and a decrease in cost.
摘要翻译：等离子体处理装置具有围绕设置在能够减压并与靶成膜基底平行布置的沉积设备中的靶成膜基底的阴极电极。在等离子体处理装置中，通过向阴极施加放电频率为20MHz〜450MHz的RF电力，在阴极电极与目标成膜基体之间产生等离子体。在等离子体处理装置中，阴极由一个金属材料部分和至少两个布置在夹着金属材料部分的位置处的电介质部分构成，并且金属材料的尺寸（L1）的比率（L1 / L2）阴极电极在轴向上的距离与目标成膜基材的轴向尺寸（L2）的比例落在0.1〜0.45的范围内。利用等离子体处理装置，可以防止等离子体放电的不稳定性和不均匀性，以消除膜厚度和膜质量的不均匀性，并且在相对大的目标成膜基底上以高沉积速度形成具有良好特性的膜以实现生产率并降低成本。

6. 发明授权

US5945353A Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US5945353A
公开(公告)日：1999-08-31
申请号：US942119
申请日：1997-10-01
申请人： Junichiro Hashizume , Shigenori Ueda , Shinji Tsuchida
发明人： Junichiro Hashizume , Shigenori Ueda , Shinji Tsuchida
IPC分类号： C23C16/24 , C23C16/50 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/302
CPC分类号： H01J37/32082
摘要： In a plasma processing method and apparatus for carrying out plasma processing by supplying a high-frequency power of 20 MHz to 450 MHz to cause discharge to take place between a first electrode serving also as a film forming substrate and a second electrode provided so as to surround the first electrode, the high-frequency power is supplied from its power source to the second electrode at two points at least. In plasma processing apparatuses as typified by plasma CVD apparatuses to which the high-frequency power of a frequency from 20 MHz to 450 MHz is supplied, this method and apparatus can effectively decrease unevenness in plasma processing in the peripheral direction of the film formed, can promise a high plasma processing rate and can improve the characteristics of a deposited film during deposited film formation.
摘要翻译：在通过提供20MHz至450MHz的高频功率进行等离子体处理的等离子体处理方法和装置中，在也用作成膜基板的第一电极和第二电极之间发生放电，围绕第一电极，至少在两点将高频电力从其电源提供给第二电极。在等离子体处理装置中，以等离子体CVD装置为代表，其中提供了频率为20MHz至450MHz的高频功率，该方法和装置可以有效地降低等离子体处理在成膜的周向方向上的不均匀性，承诺了高等离子体处理速度，并且可以在沉积膜形成期间改善沉积膜的特性。

7. 发明授权

US5902405A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5902405A
公开(公告)日：1999-05-11
申请号：US868315
申请日：1997-06-03
申请人： Shigenori Ueda , Junichiro Hashizume , Shinji Tsuchida
发明人： Shigenori Ueda , Junichiro Hashizume , Shinji Tsuchida
IPC分类号： H05H1/46 , C23C16/50 , H01J37/32 , H05H1/00
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/321
摘要： A plasma processing apparatus has a second electrode set parallel to a first electrode to be set in a deposition chamber capable of being set in an airtight vacuum, and an RF power supply path for applying an RF power having a discharge frequency of 20 MHz to 450 MHz to the second electrode. In the plasma processing apparatus, a high-voltage capacitor having a small capacitance is arranged on the RF power supply path. With this arrangement, the plasma processing apparatus capable of uniformly, stably processing a relative large base with a plasma at a high processing speed is provided. Further, the plasma processing apparatus in which the manufacturing time can be shortened and cost can be decreased is provided.
摘要翻译：等离子体处理装置具有平行于要设置在能够设置在气密真空中的沉积室中的第一电极的第二电极组和用于将放电频率为20MHz的RF功率施加到450的RF电源路径 MHz到第二电极。在等离子体处理装置中，在RF供电路径上配置具有小电容的高电压电容器。利用这种布置，提供了能够以高处理速度均匀地稳定地处理具有等离子体的相对较大基座的等离子体处理装置。此外，提供了可以缩短制造时间并且可以降低成本的等离子体处理装置。

8. 发明授权

US06861373B2 Vacuum processing method and semiconductor device manufacturing method in which high-frequency powers having mutually different frequencies are applied to at least one electrode 失效
标题翻译：真空处理方法和半导体器件制造方法，其中具有相互不同频率的高频功率被施加到至少一个电极
公开(公告)号：US06861373B2
公开(公告)日：2005-03-01
申请号：US10011776
申请日：2001-12-11
申请人： Makoto Aoki , Toshiyasu Shirasuna , Hiroaki Niino , Kazuyoshi Akiyama , Hitoshi Murayama , Shinji Tsuchida , Daisuke Tazawa , Yukihiro Abe
发明人： Makoto Aoki , Toshiyasu Shirasuna , Hiroaki Niino , Kazuyoshi Akiyama , Hitoshi Murayama , Shinji Tsuchida , Daisuke Tazawa , Yukihiro Abe
IPC分类号： H05H1/46 , C23C16/505 , G03G5/08 , G03G5/082 , H01J37/32 , H01L21/205 , G03G5/00
CPC分类号： H01J37/32174 , G03G5/08278 , H01J37/32082 , H01J37/32165 , H01J37/32183 , H01J37/32568
摘要： A vacuum processing method that includes placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to at least one high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode(s), thereby processing the article. The frequencies and power values of the at least two high-frequency powers supplied satisfy required relationships.
摘要翻译：一种真空处理方法，其特征在于，将待处理物品放置在反应容器中，同时向至少一个高频电极供给具有相互不同频率的至少两个高频电力，以通过高频率在反应容器中产生等离子体从高频电极引入反应容器，从而处理制品。提供的至少两个高频功率的频率和功率值满足所需的关系。

9. 发明授权

US07051671B2 Vacuum processing apparatus in which high frequency powers having mutually different frequencies are used to generate plasma for processing an article 有权
标题翻译：使用具有相互不同的频率的高频功率来产生处理物品的等离子体的真空处理装置
公开(公告)号：US07051671B2
公开(公告)日：2006-05-30
申请号：US10875404
申请日：2004-06-25
申请人： Makoto Aoki , Toshiyasu Shirasuna , Hiroaki Niino , Kazuyoshi Akiyama , Hitoshi Murayama , Shinji Tsuchida , Daisuke Tazawa , Yukihiro Abe
发明人： Makoto Aoki , Toshiyasu Shirasuna , Hiroaki Niino , Kazuyoshi Akiyama , Hitoshi Murayama , Shinji Tsuchida , Daisuke Tazawa , Yukihiro Abe
IPC分类号： C23C16/00
CPC分类号： H01J37/32174 , G03G5/08278 , H01J37/32082 , H01J37/32165 , H01J37/32183 , H01J37/32568
摘要： A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy a required relationship.
摘要翻译：一种真空处理方法，包括将待处理的物品放置在反应容器中，同时向相同的高频电极提供具有不同频率的至少两个高频电源，以通过被引入到高频电极的高频功率在反应容器中产生等离子体来自高频电极的反应容器。提供的至少两个高频功率的频率和功率值满足所需的关系。

10. 发明授权

US06704453B2 Method and apparatus for processing image and storing medium 有权
标题翻译：用于处理图像和存储介质的方法和装置
公开(公告)号：US06704453B2
公开(公告)日：2004-03-09
申请号：US09280667
申请日：1999-03-29
申请人： Shinji Tsuchida
发明人： Shinji Tsuchida
IPC分类号： G06K936
CPC分类号： H04N1/212 , H04N1/00127 , H04N1/2112 , H04N5/77 , H04N2101/00 , H04N2201/0049 , H04N2201/0053 , H04N2201/0055 , H04N2201/0084 , H04N2201/0087
摘要： An object of the present invention is to surely store a desired image having a desired length regardless of capacity of a memory capable of storing a newly inputted image. To this end, in the present invention, in response to recording instruction, by sending a photo-taken moving image to another apparatus connected through a communication circuit and by storing the moving image in a memory means of the another apparatus, an apparatus for photo-taking the moving image does not require large memory capacity, so that a large amount data such as the moving image can be stored positively.
摘要翻译：本发明的目的是确保存储具有期望长度的所需图像，而不管存储器能够存储新输入的图像的容量。为此，在本发明中，响应于记录指令，通过发送照片将运动图像移动到通过通信电路连接的另一装置，并通过将运动图像存储在另一装置的存储装置中，用于拍摄运动图像的装置不需要较大的存储容量，从而大量数据如因为可以积极地存储运动图像。

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