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1. 发明授权

US5270232A Process for fabricating field effect transistor 失效
标题翻译：制造场效应晶体管的工艺
公开(公告)号：US5270232A
公开(公告)日：1993-12-14
申请号：US943018
申请日：1992-09-10
申请人： Shinichiro Kimura , Shoji Shukuri , Hiromasa Noda , Digh Hisamoto , Hideyuki Matsuoka , Kazuyoshi Torii , Natsuki Yokoyama , Toshiyuki Yoshimura , Kazunori Tsujimoto , Eiji Takeda
发明人： Shinichiro Kimura , Shoji Shukuri , Hiromasa Noda , Digh Hisamoto , Hideyuki Matsuoka , Kazuyoshi Torii , Natsuki Yokoyama , Toshiyuki Yoshimura , Kazunori Tsujimoto , Eiji Takeda
IPC分类号： H01L29/78 , H01L21/285 , H01L21/336 , H01L21/70
CPC分类号： H01L29/66606 , H01L21/28525 , H01L29/66621 , Y10S438/947
摘要： A very thin oxide film is formed at an opening formed in an insulator film and a conductor layer, on a substrate, and impurity-containing polysilicon is formed on the sidewall of the opening. Impurity diffusion from the from the silicon into the substrate through the very thin oxide film causes a lowering in effective concentration of the diffused impurities, resulting in the formation of shallower source/drain region. Thereafter, a gate insulator film and a gate electrode are formed on the substrate surface in an area bounded by an insulator film formed on the sidewall of the opening. The gate electrode smaller than the opening, the size of which corresponds to the limit of processing, and the shallower source/drain region afford a miniaturized MOSFET.
摘要翻译：在基板上形成绝缘体膜和导体层的开口处形成非常薄的氧化膜，并且在开口的侧壁上形成含杂质的多晶硅。通过非常薄的氧化膜从硅到衬底的杂质扩散导致扩散杂质的有效浓度降低，导致形成较浅的源/漏区。此后，在由形成在开口的侧壁上的绝缘膜限定的区域中的基板表面上形成栅绝缘膜和栅电极。小于开口的栅极电极，其尺寸对应于处理极限，并且较浅的源极/漏极区域提供小型化的MOSFET。

2. 发明授权

US5357464A Semiconductor memory having writing and reading transistors, method of fabrication thereof, and method of use thereof 失效
标题翻译：具有写入和读取晶体管的半导体存储器，其制造方法及其使用方法
公开(公告)号：US5357464A
公开(公告)日：1994-10-18
申请号：US22937
申请日：1993-02-26
申请人： Shuji Shukuri , Toru Koga , Shinichiro Kimura , Digh Hisamoto , Kazuhiko Sagara , Tokuo Kure , Eiji Takeda
发明人： Shuji Shukuri , Toru Koga , Shinichiro Kimura , Digh Hisamoto , Kazuhiko Sagara , Tokuo Kure , Eiji Takeda
IPC分类号： H01L27/10 , G11C11/401 , G11C11/402 , H01L21/8242 , H01L27/108 , G11C11/40
CPC分类号： G11C11/401 , H01L27/108
摘要： Disclosed is a semiconductor memory having a self-amplifying cell structure, using (1) a writing transistor and (2) a reading transistor with a floating gate as a charge storage node for each memory cell, and a method of fabricating the memory cell. The writing transistor and reading transistor are of opposite conductivity type to each other; for example, the writing transistor uses a P-channel MOS transistor and the reading transistor (having the floating gate) uses an N-channel MOS transistor. The floating gate of the reading transistor is connected to a single bit line through a source-drain path of the writing transistor, the source-drain path of the reading transistor is connected between the single bit line and a predetermined potential, and the gate electrodes of the writing and reading transistors are connected to a single word line. At least the reading transistor can be formed in a trench, and the word line can be formed overlying the writing transistor and the reading transistor in the trench. Also disclosed is a method of operating the memory cell, wherein the voltage applied to the word line, in a standby condition, is intermediate to the voltage applied to the word line during the writing operation and during the reading operation.
摘要翻译：公开了具有自放大单元结构的半导体存储器，其使用（1）写入晶体管和（2）具有浮置栅极的读取晶体管作为每个存储单元的电荷存储节点，以及制造该存储单元的方法。写入晶体管和读取晶体管彼此具有相反的导电类型; 例如，写入晶体管使用P沟道MOS晶体管，并且读取晶体管（具有浮置栅极）使用N沟道MOS晶体管。读取晶体管的浮置栅极通过写入晶体管的源极 - 漏极连接到单个位线，读取晶体管的源极 - 漏极连接在单个位线和预定电位之间，并且栅电极的写和读晶体管连接到单个字线。至少读取晶体管可以形成在沟槽中，并且字线可以形成在沟槽中的写入晶体管和读取晶体管的上方。还公开了一种操作存储单元的方法，其中在备用状态下施加到字线的电压在写入操作期间和在读取操作期间施加到字线的电压的中间。

3. 发明授权

US5200635A Semiconductor device having a low-resistivity planar wiring structure 失效
标题翻译：具有低电阻率平面布线结构的半导体器件
公开(公告)号：US5200635A
公开(公告)日：1993-04-06
申请号：US686757
申请日：1991-04-17
申请人： Toru Kaga , Shinichiro Kimura , Katsutaka Kimura , Yoshinobu Nakagome , Digh Hisamoto , Yoshifumi Kawamoto , Eiji Takeda , Shimpei Iijima , Tokuo Kure , Takashi Nishida
发明人： Toru Kaga , Shinichiro Kimura , Katsutaka Kimura , Yoshinobu Nakagome , Digh Hisamoto , Yoshifumi Kawamoto , Eiji Takeda , Shimpei Iijima , Tokuo Kure , Takashi Nishida
IPC分类号： H01L27/108 , H01L29/417 , H01L29/45
CPC分类号： H01L29/41775 , H01L27/10817 , H01L29/456 , H01L2924/0002
摘要： The present invention concerns a semiconductor device having a low-resistivity wiring structure. Wirings formed directly on a hill and valley structure result in a thin portion and, in an extreme case, a disconnected portion. This increases the resistivity of wirings on the hill and valley structure and lowers the reliability of the connection. In a case where the wirings are data lines of a memory, with an increased effective length, the resistance and the parasitic capacitance of the data line is greater. The above mentioned problems have been solved by wirings which comprise at least two layers of conductive film including a first conductive film as a lower layer and a second conductive film as an upper layer, and the first conductive layer has a surface moderating or planarizing the hills and valleys in the underlying material.
摘要翻译：本发明涉及具有低电阻率布线结构的半导体器件。直接形成在山谷和山谷结构上的布线导致薄的部分，并且在极端情况下是断开的部分。这增加了山丘和山谷结构上的布线电阻率，降低了连接的可靠性。在布线是存储器的数据线的情况下，随着有效长度的增加，数据线的电阻和寄生电容更大。上述问题已经通过包括至少两层导电膜的布线来解决，所述导电膜包括作为下层的第一导电膜和作为上层的第二导电膜，并且第一导电层具有调节或平坦化山丘的表面和底层材料中的山谷。

4. 发明授权

US08030668B2 Semiconductor LED, opto-electronic integrated circuits (OEIC), and method of fabricating OEIC 有权
标题翻译：半导体LED，光电集成电路（OEIC）以及制造OEIC的方法
公开(公告)号：US08030668B2
公开(公告)日：2011-10-04
申请号：US11935904
申请日：2007-11-06
申请人： Digh Hisamoto , Shinichi Saito , Shinichiro Kimura
发明人： Digh Hisamoto , Shinichi Saito , Shinichiro Kimura
IPC分类号： H01L27/15
CPC分类号： H01L27/15 , G02B6/13 , G02B6/43 , H01L33/02 , H01L33/34
摘要： A light emitting diode demonstrating high luminescence efficiency and comprising a Group IV semiconductor such as silicon or germanium equivalent thereto as a basic component formed on a silicon substrate by a prior art silicon process, and a fabricating method of waveguide thereof are provided. The light emitting diode of the invention comprises a first electrode for implanting electrons, a second electrode for implanting holes, and a light emitting section electrically connected to the first and the second electrode, wherein the light emitting section is made out of single crystalline silicon and has a first surface and a second surface facing the first surface, wherein with respect to plane orientation (100) of the first and second surfaces, the light emitting section crossing at right angles to the first and second surfaces is made thinner, and wherein a material having a high refractive index is arranged around the thin film section.
摘要翻译：提供了高发光效率的发光二极管，并且包括通过现有技术的硅工艺在硅衬底上形成的等价于其的硅或锗等IV族半导体作为基底部件，以及其波导管的制造方法。本发明的发光二极管包括用于注入电子的第一电极，用于注入孔的第二电极和与第一和第二电极电连接的发光部分，其中发光部分由单晶硅制成，具有面向第一表面的第一表面和第二表面，其中相对于第一表面和第二表面的平面取向（100），使与第一表面和第二表面成直角交叉的发光部分变薄，并且其中具有高折射率的材料设置在薄膜部分周围。

5. 发明授权

US07935597B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US07935597B2
公开(公告)日：2011-05-03
申请号：US12912609
申请日：2010-10-26
申请人： Yasuhiro Shimamoto , Digh Hisamoto , Tetsuya Ishimaru , Shinichiro Kimura
发明人： Yasuhiro Shimamoto , Digh Hisamoto , Tetsuya Ishimaru , Shinichiro Kimura
IPC分类号： H01L21/336
CPC分类号： H01L29/792 , G11C16/0425 , H01L21/28282 , H01L21/31155 , H01L27/105 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L29/42344 , H01L29/66833
摘要： Performance and reliability of a semiconductor device including a non-volatile memory are improved. A memory cell of the non-volatile memory includes, over an upper portion of a semiconductor substrate, a select gate electrode formed via a first dielectric film and a memory gate electrode formed via a second dielectric film formed of an ONO multilayered film having a charge storing function. The first dielectric film functions as a gate dielectric film, and includes a third dielectric film made of silicon oxide or silicon oxynitride and a metal-element-containing layer made of a metal oxide or a metal silicate formed between the select gate electrode and the third dielectric film. A semiconductor region positioned under the memory gate electrode and the second dielectric film has a charge density of impurities lower than that of a semiconductor region positioned under the select gate electrode and the first dielectric film.
摘要翻译：提高了包括非易失性存储器的半导体器件的性能和可靠性。非易失性存储器的存储单元包括在半导体衬底的上部上的经由第一电介质膜形成的选择栅电极和通过由具有电荷的ONO多层膜形成的第二电介质膜形成的存储栅电极存储功能。第一电介质膜用作栅极电介质膜，并且包括由氧化硅或氮氧化硅制成的第三电介质膜和由选择栅电极和第三电极之间形成的金属氧化物或金属硅酸盐构成的含金属元素层电介质膜。位于存储栅电极下方的半导体区域和第二电介质膜的电荷密度低于位于选择栅电极和第一电介质膜下方的半导体区域的电荷密度。

6. 发明申请

US20090014775A1 SEMICONDUCTOR NONVOLATILE MEMORY DEVICE 有权
标题翻译：半导体非易失性存储器件
公开(公告)号：US20090014775A1
公开(公告)日：2009-01-15
申请号：US12233670
申请日：2008-09-19
申请人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
发明人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
IPC分类号： H01L29/00
CPC分类号： G11C16/0425 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3454 , G11C16/3459
摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
摘要翻译：提供一种稳定运行半导体非易失性存储器件的操作方案。当在分裂栅极结构的半导体非易失性存储器件中进行热空穴注入时，使用不随时间变化的交叉点来验证热孔注入。因此，可以验证擦除状态，而不知道任何时变变化。此外，通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。

7. 发明申请

US20070210371A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND ITS FABRICATION METHOD 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20070210371A1
公开(公告)日：2007-09-13
申请号：US11653832
申请日：2007-01-17
申请人： Digh Hisamoto , Kan Yasui , Shinichiro Kimura , Daisuke Okada
发明人： Digh Hisamoto , Kan Yasui , Shinichiro Kimura , Daisuke Okada
IPC分类号： H01L29/788
CPC分类号： H01L29/792 , H01L21/28282 , H01L27/115 , H01L27/11568 , H01L29/42344 , H01L29/66833
摘要： A memory cell includes a selective gate and a memory gate arranged on one side surface of the selective gate. The memory gate includes one part formed on one side surface of the selective gate and the other part electrically isolated from the selective gate and a p-well through an ONO layer formed below the memory gate. A sidewall-shaped silicon oxide is formed on side surfaces of the selective gate, and a sidewall-shaped silicon dioxide layer and a silicon dioxide layer are formed on side surfaces of the memory gate. The ONO layer formed below the memory gate is terminated below the silicon oxide, and prevents generation of a low breakdown voltage region in the silicon oxide near an end of the memory gate during deposition of the silicon dioxide layer.
摘要翻译：存储单元包括布置在选择栅极的一个侧表面上的选择栅极和存储栅极。存储器栅极包括形成在选择栅极的一个侧表面上的一个部分和与选择栅极电隔离的另一部分，以及通过形成在存储栅极下方的ONO层的p阱。在选择栅极的侧面上形成侧壁状的氧化硅，在存储栅的侧面形成侧壁状的二氧化硅层和二氧化硅层。形成在存储器栅下方的ONO层终止在氧化硅的下方，并且防止在沉积二氧化硅层期间在存储栅的端部附近的硅氧化物中产生低的击穿电压区域。

8. 发明申请

US20070183206A1 Semiconductor nonvolatile memory device 失效
标题翻译：半导体非易失性存储器件
公开(公告)号：US20070183206A1
公开(公告)日：2007-08-09
申请号：US11727592
申请日：2007-03-27
申请人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
发明人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/0425 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3454 , G11C16/3459
摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided. When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes. Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
摘要翻译：提供一种稳定运行半导体非易失性存储器件的操作方案。当在分裂栅极结构的半导体非易失性存储器件中进行热空穴注入时，使用不随时间变化的交叉点来验证热孔注入。因此，可以验证擦除状态，而不知道任何时变变化。此外，通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。

9. 发明授权

US08472258B2 Semiconductor nonvolatile memory device 有权
标题翻译：半导体非易失性存储器件
公开(公告)号：US08472258B2
公开(公告)日：2013-06-25
申请号：US13269425
申请日：2011-10-07
申请人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
发明人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
IPC分类号： G11C11/34 , G11C16/04 , G11C16/06
CPC分类号： G11C16/0425 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3454 , G11C16/3459
摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
摘要翻译：提供一种稳定运行半导体非易失性存储器件的操作方案。当在分裂栅极结构的半导体非易失性存储器件中进行热空穴注入时，使用不随时间变化的交叉点来验证热孔注入。因此，可以验证擦除状态，而不知道任何时变变化。此外，通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。

10. 发明授权

US08076709B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08076709B2
公开(公告)日：2011-12-13
申请号：US12873679
申请日：2010-09-01
申请人： Tetsuya Ishimaru , Digh Hisamoto , Kan Yasui , Shinichiro Kimura
发明人： Tetsuya Ishimaru , Digh Hisamoto , Kan Yasui , Shinichiro Kimura
IPC分类号： H01L29/792 , G11C16/04
CPC分类号： G11C16/0466 , H01L21/28282 , H01L29/66833 , H01L29/792
摘要： In a situation where a memory cell includes an ONO film, which comprises a silicon nitride film for charge storage and oxide films positioned above and below the silicon nitride film; a memory gate above the ONO film; a select gate, which is adjacent to a lateral surface of the memory gate via the ONO film; a gate insulator positioned below the select gate; a source region; and a drain region, an erase operation is performed by injecting holes generated by BTBT into the silicon nitride film while applying a positive potential to the source region, applying a negative potential to the memory gate, applying a positive potential to the select gate, and flowing a current from the drain region to the source region, thus improving the characteristics of a nonvolatile semiconductor memory device.
摘要翻译：在存储单元包括ONO膜的情况下，其包括用于电荷存储的氮化硅膜和位于氮化硅膜上方和下方的氧化膜; 在ONO电影上方的记忆门; 选择栅极，其经由ONO膜与存储栅的侧表面相邻; 位于选择门下方的栅极绝缘体; 源区; 和漏极区域，通过将BTBT产生的空穴注入氮化硅膜，同时向源极区域施加正电位，向存储栅极施加负电位，向选择栅极施加正电位，进行擦除操作，以及使电流从漏极区域流向源极区域，从而改善非易失性半导体存储器件的特性。

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