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1. 发明申请

US20100316942A1 PHOTOMASK MAKING METHOD 有权
标题翻译：照片制作方法
公开(公告)号：US20100316942A1
公开(公告)日：2010-12-16
申请号：US12813137
申请日：2010-06-10
申请人： Shinichi IGARASHI , Yukio INAZUKI , Hideo KANEKO , Hiroki YOSHIKAWA , Yoshinori KINASE
发明人： Shinichi IGARASHI , Yukio INAZUKI , Hideo KANEKO , Hiroki YOSHIKAWA , Yoshinori KINASE
IPC分类号： G03F1/00
CPC分类号： G03F1/26 , G03F1/30 , G03F1/32 , G03F1/80
摘要： A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film.
摘要翻译：光掩模由包括透明基板和由含过渡金属的硅基材料的上层和下层组成的遮光膜的光掩模坯料制造，上层中的O + N的含量高于下层的含量层。遮光膜通过氟干蚀刻通过抗蚀剂图案进行两步加工，使得膜的下部留下，并且含氧氯干蚀刻用于除去膜的其余部分。

2. 发明申请

US20130059235A1 PHOTOMASK BLANK, PHOTOMASK, AND MAKING METHOD 有权
标题翻译： PHOTOMASK BLANK，PHOTOMASK和制作方法
公开(公告)号：US20130059235A1
公开(公告)日：2013-03-07
申请号：US13590315
申请日：2012-08-21
申请人： Yukio INAZUKI , Shinichi IGARASHI , Kazuhiro NISHIKAWA , Hiroki YOSHIKAWA
发明人： Yukio INAZUKI , Shinichi IGARASHI , Kazuhiro NISHIKAWA , Hiroki YOSHIKAWA
IPC分类号： G03F1/00 , G03F1/76 , G03F1/50 , B82Y30/00
CPC分类号： G03F1/26 , G03F1/14 , G03F1/38 , G03F1/50
摘要： In a photomask blank comprising a transparent substrate, an optical film of material containing a transition metal and silicon, and a hard mask film, the hard mask film is a multilayer film including a first layer of a chromium-based material containing 20-60 atom % of oxygen and a second layer of a chromium-based material containing at least 50 atom % of chromium and less than 20 atom % of oxygen. The hard mask film having a thickness of 2.0 nm to less than 10 nm is resistant to fluorine dry etching.
摘要翻译：在包含透明基板的光掩模坯料，含有过渡金属和硅的材料的光学膜和硬掩模膜中，硬掩模膜是包括含有20-60个原子的铬基材料的第一层的多层膜氧的百分比和含有至少50原子％的铬和小于20原子％的氧的铬基材料的第二层。具有2.0nm至小于10nm厚度的硬掩模膜耐氟干蚀刻。

3. 发明申请

US20120064438A1 PHOTOMASK BLANK AND MAKING METHOD, PHOTOMASK, LIGHT PATTERN EXPOSURE METHOD, AND DESIGN METHOD OF TRANSITION METAL/SILICON BASE MATERIAL FILM 有权
标题翻译：光电薄膜和制作方法，光电子图案，光图案曝光方法，以及过渡金属/硅基材料薄膜的设计方法
公开(公告)号：US20120064438A1
公开(公告)日：2012-03-15
申请号：US13228501
申请日：2011-09-09
申请人： Hiroki YOSHIKAWA , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
发明人： Hiroki YOSHIKAWA , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
IPC分类号： G03F7/20 , H01L21/31 , G03F1/00
CPC分类号： G03F1/72 , G03F1/32 , G03F1/48 , G03F1/50
摘要： A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100−6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.
摘要翻译：光掩模坯料具有包含氧含量为至少3原子％的过渡金属，硅，氧和氮的过渡金属/硅基材的膜，并且满足下式：4×CSi / 100-6×CM 其中CSi是原子％的硅含量，CM是原子％的过渡金属含量。

4. 发明申请

US20090057143A1 FILM-DEPOSITING TARGET AND PREPARATION OF PHASE SHIFT MASK BLANK 审中-公开
标题翻译：电泳沉积目标和相移片掩模的制备
公开(公告)号：US20090057143A1
公开(公告)日：2009-03-05
申请号：US12259603
申请日：2008-10-28
申请人： Hiroki YOSHIKAWA , Toshinobu ISHIHARA , Satoshi OKAZAKI , Yukio INAZUKI , Tadashi SAGA , Kimihiro OKADA , Masahide IWAKATA , Takashi HARAGUCHI , Yuichi FUKUSHIMA
发明人： Hiroki YOSHIKAWA , Toshinobu ISHIHARA , Satoshi OKAZAKI , Yukio INAZUKI , Tadashi SAGA , Kimihiro OKADA , Masahide IWAKATA , Takashi HARAGUCHI , Yuichi FUKUSHIMA
IPC分类号： C23C14/14
CPC分类号： G03F1/32 , C23C14/06 , C23C14/3414 , C23C14/3464
摘要： A film-depositing target for use in the manufacture of a halftone phase shift mask blank includes a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film including silicon, molybdenum and zirconium at the same time as constituent elements, and at least two elements, zirconium and molybdenum in a molar ratio Zr/Mo between 0.05 and 5.
摘要翻译：用于制造半色调相移掩模坯料的成膜靶材包括透明基板和具有受控相位和透射率的一层或多层的半透明膜，至少一层半透明膜包括硅，钼和锆，以及至少两种元素，Zr / Mo摩尔比为0.05和5之间的锆和钼。

5. 发明申请

US20100261100A1 PHOTOMASK BLANK AND PHOTOMASK 有权
标题翻译： PHOTOMASK BLANK和PHOTOMASK
公开(公告)号：US20100261100A1
公开(公告)日：2010-10-14
申请号：US12820918
申请日：2010-06-22
申请人： Hiroki YOSHIKAWA , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
发明人： Hiroki YOSHIKAWA , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/38 , G03F1/46 , G03F1/58 , G03F1/80 , Y10T428/31616
摘要： A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要翻译：提供一种光掩模坯料，其包括设置在透明基板上的耐蚀刻干蚀刻和通过氯干蚀刻除去的蚀刻停止膜，设置在蚀刻停止膜上的遮光膜，并且包括至少一层由过渡金属/硅材料和设置在遮光膜上的抗反射膜。当光屏蔽膜被干蚀刻以形成图案时，由图案密度依赖性引起的图案尺寸变化减小，使得以高精度产生光掩模。

6. 发明申请

US20070212619A1 Photomask blank and photomask making method 有权
标题翻译：光掩模空白和光掩模制作方法
公开(公告)号：US20070212619A1
公开(公告)日：2007-09-13
申请号：US11715368
申请日：2007-03-08
申请人： Hiroki YOSHIKAWA , Yukio INAZUKI , Satoshi OKAZAKI , Takashi HARAGUCHI , Tadashi SAGA , Yosuke KOJIMA , Kazuaki CHIBA , Yuichi FUKUSHIMA
发明人： Hiroki YOSHIKAWA , Yukio INAZUKI , Satoshi OKAZAKI , Takashi HARAGUCHI , Tadashi SAGA , Yosuke KOJIMA , Kazuaki CHIBA , Yuichi FUKUSHIMA
IPC分类号： B32B17/10 , B32B9/00 , G03F1/00 , B32B17/06
CPC分类号： G03F1/32 , C23F4/00 , G03F1/30 , G03F1/46 , G03F1/54 , G03F1/80 , Y10T428/31616
摘要： A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要翻译：光掩模坯料包括透明基板，沉积在基板上并包含易受氟干蚀刻影响的金属或金属化合物的遮光膜，以及沉积在遮光膜上并包含另一金属或金属化合物的蚀刻掩模膜到氟干蚀刻。当光屏蔽膜被干蚀刻以形成图案时，由图案密度依赖性引起的图案尺寸变化减小，使得以高精度产生光掩模。

7. 发明申请

US20120100467A1 SPUTTERING TARGET MATERIAL, SILICON-CONTAINING FILM FORMING METHOD, AND PHOTOMASK BLANK 有权
标题翻译：溅射目标材料，含硅薄膜成型方法和光电隔离层
公开(公告)号：US20120100467A1
公开(公告)日：2012-04-26
申请号：US13273656
申请日：2011-10-14
申请人： Hideo KANEKO , Yokio INAZUKI , Hiroki YOSHIKAWA
发明人： Hideo KANEKO , Yokio INAZUKI , Hiroki YOSHIKAWA
IPC分类号： C23C14/06 , G03F1/50 , C23C14/34
CPC分类号： C23C14/3414 , C23C14/0036 , C23C14/0676 , C23C14/564 , G03F1/54
摘要： Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 Ω·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.
摘要翻译：提供了一种硅靶材料，其中在溅射工艺期间不容易产生颗粒并形成低缺陷（高质量）含硅膜。使用在室温下电阻率为20Ω·cm·cm以上的硅靶材料形成含硅膜。硅靶材料可以是多晶的或非晶的。然而，当硅靶材料是单晶时，可以获得更稳定的放电状态。此外，由于其含氧量低，因此通过FZ法生长晶体的单晶硅是优选的高纯度硅靶材料。此外，优选具有n型导电性且含有供体杂质的靶材料，以获得稳定的放电特性。根据本发明，只有一种或多种硅靶材料可用于溅射含硅膜的成膜。

8. 发明申请

US20120138453A1 SILICON TARGET FOR SPUTTERING FILM FORMATION AND METHOD FOR FORMING SILICON-CONTAINING THIN FILM 审中-公开
标题翻译：用于溅射膜形成的硅靶和形成含硅薄膜的方法
公开(公告)号：US20120138453A1
公开(公告)日：2012-06-07
申请号：US13302543
申请日：2011-11-22
申请人： Hiroki YOSHIKAWA , Yokio Inazuki , Hideo Kaneko
发明人： Hiroki YOSHIKAWA , Yokio Inazuki , Hideo Kaneko
IPC分类号： C23C14/06 , C23C14/34
CPC分类号： H01J37/3426 , C23C14/0676 , C23C14/14 , C23C14/3407 , C23C14/3414
摘要： A silicon target for sputtering film formation which enables formation of a high-quality silicon-containing thin film by inhibiting dust generation during sputtering film formation is provided. An n-type silicon target material 10 and a metallic backing plate 20 are attached to each other via a bonding layer 40. A conductive layer 30 made of a material having a smaller work function than that of the silicon target material 10 is provided on a surface of the silicon target material 10 on the bonding layer 40 side. That is, the silicon target material 10 is attached to the metallic backing plate 20 via the conductive layer 30 and the bonding layer 40. In a case of single-crystal silicon, a work function of n-type silicon is generally 4.05 eV. A work function of a material of the conductive layer 30 needs to be smaller than 4.05 eV.
摘要翻译：提供一种用于溅射成膜的硅靶，其能够通过抑制溅射成膜期间的粉尘产生而形成高质量的含硅薄膜。 n型硅靶材料10和金属背板20经由接合层40彼此附接。由具有比硅靶材料10的功函数小的材料制成的导电层30设置在接合层40侧的硅靶材10的表面。也就是说，硅靶材料10经由导电层30和接合层40附着到金属背板20.在单晶硅的情况下，n型硅的功函数通常为4.05eV。导电层30的材料的功函数需要小于4.05eV。

9. 发明申请

US20120021341A1 SUBSTRATE TO BE PROCESSED HAVING LAMINATED THEREON RESIST FILM FOR ELECTRON BEAM AND ORGANIC CONDUCTIVE FILM, METHOD FOR MANUFACTURING THE SAME, AND RESIST PATTERNING PROCESS 有权
标题翻译：具有用于电子束和有机导电膜的层压式电阻膜的基板，其制造方法和电阻图案处理
公开(公告)号：US20120021341A1
公开(公告)日：2012-01-26
申请号：US13168446
申请日：2011-06-24
申请人： Satoshi WATANABE , Hiroki YOSHIKAWA
发明人： Satoshi WATANABE , Hiroki YOSHIKAWA
IPC分类号： G03C1/00 , G03F7/20 , B05D5/12 , G03F7/004
CPC分类号： G03F1/78 , H01J2237/004 , H01J2237/31796
摘要： There is disclosed a substrate to be processed having laminated thereon a resist film for electron beam and an organic conductive film, in which at least a resist film for electron beam and an organic conductive film are laminated in order on a substrate to be processed having a conductive inorganic thin film as its surface layer, wherein a surface to be processed of the substrate to be processed has an area of direct contact between the organic conductive film and the conductive inorganic thin film in part thereof. There can be a substrate to be processed capable of forming a resist pattern stably and accurately with efficient removal of electricity even when an electron beam with high current density is irradiated.
摘要翻译：公开了一种在其上层压有用于电子束的抗蚀剂膜和有机导电膜的待处理衬底，其中至少将用于电子束的抗蚀剂膜和有机导电膜按顺序层压在待处理的衬底上，具有导电性无机薄膜作为其表面层，其中被处理基板的被处理面在其一部分具有有机导电膜与导电性无机薄膜之间直接接触的面积。即使照射具有高电流密度的电子束，也可以具有能够稳定且准确地形成抗蚀剂图案而能够有效地去除电力的待处理基板。

10. 发明申请

US20110205499A1 PROJECTING OPTICAL UNIT AND PROJECTING TYPE IMAGE DISPLAY APPARATUS THEREWITH 有权
标题翻译：投影光学单元和投影类型图像显示设备
公开(公告)号：US20110205499A1
公开(公告)日：2011-08-25
申请号：US13099784
申请日：2011-05-03
申请人： Hiroki YOSHIKAWA , Takanori HISADA , Tetsu OHISHI , Koji HIRATA , Naoyuki OGURA
发明人： Hiroki YOSHIKAWA , Takanori HISADA , Tetsu OHISHI , Koji HIRATA , Naoyuki OGURA
IPC分类号： G03B21/26 , G03B21/28
CPC分类号： G02B17/0852
摘要： A projection image display device is disclosed in which a trapezoidal distortion and/or aberration are restrained when an image is enlarged and projected obliquely onto a screen. An image generator is connected to an optical system base in such a manner that at least an inclination thereof (on an axis parallel to X axis) with respect to a vertical line and a distance thereof in forward and backward direction (Z axis direction) can be adjusted by an adjusting mechanism. Further, a projecting lens 2 as a first optical system and a free-form curved surface mirror as a second optical system are fixed to the optical system base. The free-form curved surface mirror is rotatable (on an rotary axis parallel to X axis) with respect to the vertical line at a substantial center of the free-form curved surface mirror.
摘要翻译：公开了一种投影图像显示装置，其中当图像被放大并倾斜地投影到屏幕上时，限制了梯形失真和/或像差。图像发生器以这样的方式连接到光学系统基座，使得至少其相对于垂直线（在X轴上平行的轴线）的倾斜度及其在前后方向（Z轴方向）上的距离可以通过调整机构进行调整。此外，作为第一光学系统的投影透镜2和作为第二光学系统的自由曲面镜被固定到光学系统基座。自由曲面镜在相对于自由曲面镜的大致中心处的垂直线是可旋转的（在平行于X轴的旋转轴上）。

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