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1. 发明授权

US08475978B2 Photomask blank and making method, photomask, light pattern exposure method, and design method of transition metal/silicon base material film 有权
标题翻译：光掩模坯料和制造方法，光掩模，光图案曝光方法以及过渡金属/硅基材料薄膜的设计方法
公开(公告)号：US08475978B2
公开(公告)日：2013-07-02
申请号：US13228501
申请日：2011-09-09
申请人： Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
发明人： Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
IPC分类号： G03F1/22 , G03F1/24
CPC分类号： G03F1/72 , G03F1/32 , G03F1/48 , G03F1/50
摘要： A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100−6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.
摘要翻译：光掩模坯料具有包含氧含量为至少3原子％的过渡金属，硅，氧和氮的过渡金属/硅基材的膜，并且满足下式：4×CSi / 100-6×CM 其中CSi是原子％的硅含量，CM是原子％的过渡金属含量。

2. 发明授权

US07790339B2 Photomask blank 有权
标题翻译：光掩模空白
公开(公告)号：US07790339B2
公开(公告)日：2010-09-07
申请号：US11785689
申请日：2007-04-19
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yuichi Fukushima
IPC分类号： G03F1/00
CPC分类号： G03F1/58 , G03F1/32 , Y10T428/31616
摘要： A photomask blank has a light-shielding film composed of a single layer of a material containing a transition metal, silicon and nitrogen or a plurality of layers that include at least one layer made of a material containing a transition metal, silicon and nitrogen, and has one or more chrome-based material film. The high transition metal content ensures electrical conductivity, preventing charge-up in the photomask production process, and also provides sufficient chemical stability to cleaning in photomask production. The light-shielding film has a good resistance to dry etching of the chrome-based material film in the presence of chlorine and oxygen, thus ensuring a high processing accuracy.
摘要翻译：光掩模坯料具有由单层含有过渡金属，硅和氮的材料或多层构成的遮光膜，所述多层包括至少一层由含有过渡金属，硅和氮的材料制成的层，以及具有一种或多种铬基材料膜。高过渡金属含量确保电导率，防止光掩模生产过程中的充电，并且还为光掩模生产中的清洁提供足够的化学稳定性。遮光膜在氯和氧的存在下对铬基材料膜的干蚀刻具有良好的耐蚀性，因此确保高的加工精度。

3. 发明授权

US07767366B2 Photomask blank and photomask 有权
标题翻译：光掩模空白和光掩模
公开(公告)号：US07767366B2
公开(公告)日：2010-08-03
申请号：US11715346
申请日：2007-03-08
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/38 , G03F1/46 , G03F1/58 , G03F1/80 , Y10T428/31616
摘要： A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要翻译：提供一种光掩模坯料，其包括设置在透明基板上的耐蚀刻干蚀刻和通过氯干蚀刻除去的蚀刻停止膜，设置在蚀刻停止膜上的遮光膜，并且包括至少一层由过渡金属/硅材料和设置在遮光膜上的抗反射膜。当光屏蔽膜被干蚀刻以形成图案时，由图案密度依赖性引起的图案尺寸变化减小，使得以高精度产生光掩模。

4. 发明授权

US07691546B2 Photomask blank and photomask 有权
标题翻译：光掩模空白和光掩模
公开(公告)号：US07691546B2
公开(公告)日：2010-04-06
申请号：US11662183
申请日：2005-09-08
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/00
CPC分类号： G03F1/46 , G03F1/58 , G03F1/68
摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.
摘要翻译：用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。在透明板上，形成有一层或多层遮光膜，其中有或没有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。还提供了具有掩模图案的光掩模，该掩模图案具有透明区域和透明板上曝光光线的有效不透明区域。

5. 发明申请

US20080063950A1 Photomask Blank and Photomask 有权
标题翻译：光掩模空白和光掩模
公开(公告)号：US20080063950A1
公开(公告)日：2008-03-13
申请号：US11662183
申请日：2005-09-08
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/00
CPC分类号： G03F1/46 , G03F1/58 , G03F1/68
摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.
摘要翻译：用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。在透明板上，形成有一层或多层遮光膜，其中有或没有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。还提供了具有掩模图案的光掩模，该掩模图案具有透明区域和透明板上曝光光线的有效不透明区域。

6. 发明申请

US20070020534A1 Photomask blank, photomask and fabrication method thereof 有权
标题翻译：光掩模坯料，光掩模及其制造方法
公开(公告)号：US20070020534A1
公开(公告)日：2007-01-25
申请号：US11489477
申请日：2006-07-20
申请人： Hiroki Yoshikawa , Hiroshi Kubota , Yoshinori Kinase , Satoshi Okazaki , Tamotsu Maruyama , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Hiroshi Kubota , Yoshinori Kinase , Satoshi Okazaki , Tamotsu Maruyama , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima , Tadashi Saga
IPC分类号： B32B9/00 , B32B17/10 , B32B17/06 , G03F1/00
CPC分类号： G03F1/32 , G03F1/46 , G03F1/54 , G03F1/58 , Y10T428/24917 , Y10T428/31616
摘要： A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm−1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.
摘要翻译：在作为光掩模基板的石英等的透明基板的一个主面上形成曝光用遮光膜。遮光膜不仅可以用作所谓的“遮光膜”，而且可以用作抗反射膜。此外，遮光膜的总厚度为100nm以下，其中70％以上的铬化合物的厚度，每单位厚度的光密度（OD）为0.025nm ^{-1 。在光掩模坯料用于制造用于ArF曝光的掩模的情况下，遮光膜的厚度和组成选择为使得遮光膜的OD为193或193的屏蔽膜的OD为1.2至2.3 248 nm波长的光。}

7. 发明申请

US20060088774A1 Photomask blank, photomask and fabrication method thereof 有权
公开(公告)号：US20060088774A1
公开(公告)日：2006-04-27
申请号：US11255135
申请日：2005-10-21
申请人： Hiroki Yoshikawa , Yukio Inazuki , Yoshinori Kinase , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Yukio Inazuki , Yoshinori Kinase , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima
IPC分类号： C23F1/00 , B32B9/00 , C03C25/68 , B32B17/06 , C03C15/00 , G03F1/00 , B44C1/22
CPC分类号： G03F1/32 , G03F1/54 , G03F1/58 , G03F1/80 , Y10T428/31616
摘要： A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

8. 发明授权

US5935735A Halftone phase shift mask, blank for the same, and methods of manufacturing these 失效
标题翻译：半色调相移掩模，空白为相同，以及制造这些的方法
公开(公告)号：US5935735A
公开(公告)日：1999-08-10
申请号：US954939
申请日：1997-10-22
申请人： Kinji Okubo , Tadashi Matsuo , Takashi Haraguchi
发明人： Kinji Okubo , Tadashi Matsuo , Takashi Haraguchi
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32
摘要： A quartz glass substrate is placed in a DC or RF sputtering apparatus containing argon gas or oxygen gas. A zirconium compound target is reactively sputtered to form at least one halftone film made of a zirconium compound target on the substrate, thereby forming a blank for a halftone phase shift mask. The refractive index, the extinction coefficient, and the film thickness of the halftone film are so determined that the transmittance and the reflectance to exposure light are 2 to 15% and 30% or less, respectively, and the transmittance to inspection light is 30% or less. Examples of the zirconium compound are zirconium oxide, zirconium nitride, zirconium oxynitride, zirconium oxycarbide, zirconium carbonitride, zirconium halide, zirconium halide oxide, zirconium halide nitride, zirconium oxide silicide, zirconium nitride silicide, zirconium oxynitride silicide, zirconium oxycarbide silicide, zirconium carbonitride silicide, zirconium halide silicide, zirconium halide oxide silicide, and zirconium halide nitride silicide.
摘要翻译：将石英玻璃基板放置在包含氩气或氧气的DC或RF溅射装置中。反应性地溅射锆化合物靶，以在衬底上形成由锆化合物靶材制成的至少一个半色调膜，从而形成半色调相移掩模的坯料。确定半色调膜的折射率，消光系数和膜厚分别为曝光光的透射率和反射率分别为2〜15％和30％以下，对检查光的透射率为30％或更少。锆化合物的实例是氧化锆，氮化锆，氮氧化锆，碳氧化锆，碳氮化锆，卤化锆，卤化锆锆，卤化锆氮化物，氧化锆硅化物，氮化锆硅化物，氧氮化锆硅化物，碳氧化锆硅，碳氮化锆硅化物，卤化锆硅化物，卤化锆氧化物硅化物和卤化锆氮化硅硅化物。

9. 发明授权

US08007964B2 Photomask blank and photomask 有权
标题翻译：光掩模空白和光掩模
公开(公告)号：US08007964B2
公开(公告)日：2011-08-30
申请号：US12709116
申请日：2010-02-19
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/00
CPC分类号： G03F1/46 , G03F1/58 , G03F1/68
摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.
摘要翻译：用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。在透明板上，形成有一层或多层遮光膜，其中有或没有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。还提供了具有掩模图案的光掩模，该掩模图案具有透明区域和透明板上曝光光线的有效不透明区域。

10. 发明授权

US07771893B2 Photomask blank, photomask and fabrication method thereof 有权
标题翻译：光掩模坯料，光掩模及其制造方法
公开(公告)号：US07771893B2
公开(公告)日：2010-08-10
申请号：US11489477
申请日：2006-07-20
申请人： Hiroki Yoshikawa , Hiroshi Kubota , Yoshinori Kinase , Satoshi Okazaki , Tamotsu Maruyama , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Hiroshi Kubota , Yoshinori Kinase , Satoshi Okazaki , Tamotsu Maruyama , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/46 , G03F1/54 , G03F1/58 , Y10T428/24917 , Y10T428/31616
摘要： A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm−1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.
摘要翻译：在作为光掩模基板的石英等的透明基板的一个主面上形成曝光用遮光膜。遮光膜不仅可以用作所谓的“遮光膜”，而且可以用作抗反射膜。此外，遮光膜的总厚度为100nm以下，其中70％以上的铬化合物的厚度为0.025nm-1，每单位厚度的光密度（OD）对于波长为450nm的光。在光掩模坯料用于制造用于ArF曝光的掩模的情况下，遮光膜的厚度和组成选择为使得遮光膜的OD为193或193的屏蔽膜的OD为1.2至2.3 248 nm波长的光。

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