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1. 发明申请

US20080272443A1 Field effect transistor having field plate electrodes 审中-公开
标题翻译：具有场板电极的场效应晶体管
公开(公告)号：US20080272443A1
公开(公告)日：2008-11-06
申请号：US12149325
申请日：2008-04-30
申请人： Shinichi Hoshi , Masanori Itoh , Hideyuki Okita , Toshiharu Marui
发明人： Shinichi Hoshi , Masanori Itoh , Hideyuki Okita , Toshiharu Marui
IPC分类号： H01L29/78 , H01L29/778
CPC分类号： H01L29/402 , H01L29/0692 , H01L29/2003 , H01L29/404 , H01L29/42316 , H01L29/7783 , H01L29/78 , H01L29/812
摘要： A field effect transistor includes an active layer formed on a semiconductor substrate, source and drain electrodes formed apart from each other on the active layer, a gate electrode formed between the source and drain electrodes, a first interlayer film formed on the active layer, a first field plate (FP) electrode connected to the gate electrode and provided on the first interlayer film between the gate and drain electrodes, a second interlayer film formed on the first interlayer film, and a second FP electrode connected to the source electrode and provided on the second interlayer film between the first FP and drain electrodes. The field effect transistor is provided which exhibits a comparatively high gain factor at high frequencies.
摘要翻译：场效应晶体管包括形成在半导体衬底上的有源层，在有源层上彼此分开形成的源极和漏极，形成在源极和漏极之间的栅极，形成在有源层上的第一层间膜，第一场板（FP）电极，连接到栅电极并设置在栅极和漏极之间的第一层间膜上，形成在第一层间膜上的第二层间膜和连接到源极的第二FP电极，在第一FP和漏电极之间的第二层间膜。提供了在高频下表现出较高增益系数的场效应晶体管。

2. 发明授权

US07601993B2 Semiconductor device having ohmic recessed electrode 有权
标题翻译：具有欧姆凹陷电极的半导体器件
公开(公告)号：US07601993B2
公开(公告)日：2009-10-13
申请号：US11636430
申请日：2006-12-11
申请人： Shinichi Hoshi , Masanori Itoh
发明人： Shinichi Hoshi , Masanori Itoh
IPC分类号： H01L31/072
CPC分类号： H01L29/7787 , H01L21/28587 , H01L29/1608 , H01L29/2003 , H01L29/41766 , H01L29/66462
摘要： The present invention provides a semiconductor device having a recess-structured ohmic electrode, in which the resistance is small and variation in the resistance value caused by manufacturing irregularities is small. In the semiconductor device of the present invention, a two-dimensional electron gas layer is formed on the interface between a channel-forming layer and a Schottky layer by electrons supplied from the Schottky layer. The ohmic electrode comprises a plurality of side faces in ohmic contact with the two-dimensional electron gas layer. At least a part of side faces of the ohmic electrodes are non-parallel to a channel width direction. In a preferred embodiment of the present invention, the side faces have a saw tooth form or a comb tooth form. Since the contact area between the ohmic electrode and the two-dimensional electron gas layer is increased, ohmic resistance is reduced.
摘要翻译：本发明提供一种具有凹陷结构的欧姆电极的半导体器件，其中电阻小，并且由制造不规则性引起的电阻值的变化小。在本发明的半导体器件中，通过从肖特基层提供的电子，在沟道形成层和肖特基层之间的界面上形成二维电子气层。欧姆电极包括与二维电子气体层欧姆接触的多个侧面。欧姆电极的至少一部分侧面不平行于沟道宽度方向。在本发明的优选实施例中，侧面具有锯齿形或梳齿形。由于欧姆电极和二维电子气体层之间的接触面积增加，所以欧姆电阻降低。

3. 发明申请

US20080023727A1 Field effect transistor having its breakdown voltage enhanced 审中-公开
标题翻译：具有击穿电压增强的场效应晶体管
公开(公告)号：US20080023727A1
公开(公告)日：2008-01-31
申请号：US11878374
申请日：2007-07-24
申请人： Shinichi Hoshi , Masanori Itoh
发明人： Shinichi Hoshi , Masanori Itoh
IPC分类号： H01L31/072
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/42316
摘要： Deterioration of the high frequency characteristics of a field effect transistor is prevented, and the on- and off-gate leakage currents are reduced. A field effect transistor comprises the fourth electrode 126 between the gate electrode 122 and the drain electrode 118. The fourth electrode is formed to satisfy the relationship of 0.25=(FP2−D)/Lgd=0.5, where Lgd represents a distance between the gate and drain electrodes and FP2−D does the distance between the drain and fourth electrodes.
摘要翻译：防止了场效应晶体管的高频特性的劣化，并且降低了栅极和栅极之间的漏电流。场效应晶体管包括在栅电极122和漏电极118之间的第四电极126.第四电极形成为满足0.25 =（FP2-D）/Lgd=0.5的关系，其中Lgd表示栅极并且漏电极和FP2-D确定漏极和第四电极之间的距离。

4. 发明申请

US20080283844A1 Method for manufacturing a field effect transistor having a field plate 有权
标题翻译：具有场板的场效应晶体管的制造方法
公开(公告)号：US20080283844A1
公开(公告)日：2008-11-20
申请号：US12149823
申请日：2008-05-08
申请人： Shinichi Hoshi , Masanori Itoh , Hideyuki Okita , Toshiharu Marui
发明人： Shinichi Hoshi , Masanori Itoh , Hideyuki Okita , Toshiharu Marui
IPC分类号： H01L29/778 , H01L21/338
CPC分类号： H01L29/42316 , H01L29/2003 , H01L29/402 , H01L29/66462 , H01L29/7787
摘要： An opening for forming a gate electrode is provided by a first photoresist pattern formed on an insulating film. Reactive ion etching by inductively coupled plasma is applied to the insulating film through the first photoresist pattern as a mask to thereby expose the surface of a GaN semiconductor layer, evaporating thereon a gate metal such as NiAu, thereby forming the gate electrode by self-aligned process. This prevents an oxidized film from being formed on the surface of the semiconductor layer. After the gate electrode is formed, a second photoresist pattern is formed to form a field plate on the gate electrode and the insulating film through the second photoresist pattern as a mask. Thereby, Ti having a high adhesiveness with an insulating film made of SiN or the like can be used as a field plate metal.
摘要翻译：用于形成栅电极的开口由形成在绝缘膜上的第一光致抗蚀剂图案提供。通过电感耦合等离子体的反应离子蚀刻通过第一光致抗蚀剂图案作为掩模施加到绝缘膜，从而暴露GaN半导体层的表面，在其上蒸发诸如NiAu的栅极金属，由此通过自对准形成栅极电极处理。这防止在半导体层的表面上形成氧化膜。在形成栅电极之后，形成第二光致抗蚀剂图案，以通过第二光致抗蚀剂图案作为掩模在栅电极和绝缘膜上形成场板。由此，可以使用与由SiN等制成的绝缘膜具有高粘接性的Ti作为场板金属。

5. 发明授权

US07811872B2 Method for manufacturing a field effect transistor having a field plate 有权
标题翻译：具有场板的场效应晶体管的制造方法
公开(公告)号：US07811872B2
公开(公告)日：2010-10-12
申请号：US12149823
申请日：2008-05-08
申请人： Shinichi Hoshi , Masanori Itoh , Hideyuki Okita , Toshiharu Marui
发明人： Shinichi Hoshi , Masanori Itoh , Hideyuki Okita , Toshiharu Marui
IPC分类号： H01L21/338
CPC分类号： H01L29/42316 , H01L29/2003 , H01L29/402 , H01L29/66462 , H01L29/7787
摘要： An opening for forming a gate electrode is provided by a first photoresist pattern formed on an insulating film. Reactive ion etching by inductively coupled plasma is applied to the insulating film through the first photoresist pattern as a mask to thereby expose the surface of a GaN semiconductor layer, evaporating thereon a gate metal such as NiAu, thereby forming the gate electrode by self-aligned process. This prevents an oxidized film from being formed on the surface of the semiconductor layer. After the gate electrode is formed, a second photoresist pattern is formed to form a field plate on the gate electrode and the insulating film through the second photoresist pattern as a mask. Thereby, Ti having a high adhesiveness with an insulating film made of SiN or the like can be used as a field plate metal.
摘要翻译：用于形成栅电极的开口由形成在绝缘膜上的第一光致抗蚀剂图案提供。通过电感耦合等离子体的反应离子蚀刻通过第一光致抗蚀剂图案作为掩模施加到绝缘膜，从而暴露GaN半导体层的表面，在其上蒸发诸如NiAu的栅极金属，由此通过自对准形成栅极电极处理。这防止在半导体层的表面上形成氧化膜。在形成栅电极之后，形成第二光致抗蚀剂图案，以通过第二光致抗蚀剂图案作为掩模在栅电极和绝缘膜上形成场板。由此，可以使用与由SiN等制成的绝缘膜具有高粘接性的Ti作为场板金属。

6. 发明申请

US20070132037A1 Semiconductor device having ohmic recessed electrode 有权
标题翻译：具有欧姆凹陷电极的半导体器件
公开(公告)号：US20070132037A1
公开(公告)日：2007-06-14
申请号：US11636430
申请日：2006-12-11
申请人： Shinichi Hoshi , Masanori Itoh
发明人： Shinichi Hoshi , Masanori Itoh
IPC分类号： H01L29/76
CPC分类号： H01L29/7787 , H01L21/28587 , H01L29/1608 , H01L29/2003 , H01L29/41766 , H01L29/66462
摘要： The present invention provides a semiconductor device having a recess-structured ohmic electrode, in which the resistance is small and variation in the resistance value caused by manufacturing irregularities is small. In the semiconductor device of the present invention, a two-dimensional electron gas layer is formed on the interface between a channel-forming layer and a Schottky layer by electrons supplied from the Schottky layer. The ohmic electrode comprises a plurality of side faces in ohmic contact with the two-dimensional electron gas layer. At least a part of side faces of the ohmic electrodes are non-parallel to a channel width direction. In a preferred embodiment of the present invention, the side faces have a saw tooth form or a comb tooth form. Since the contact area between the ohmic electrode and the two-dimensional electron gas layer is increased, ohmic resistance is reduced.
摘要翻译：本发明提供一种具有凹陷结构的欧姆电极的半导体器件，其中电阻小，并且由制造不规则性引起的电阻值的变化小。在本发明的半导体器件中，通过从肖特基层提供的电子，在沟道形成层和肖特基层之间的界面上形成二维电子气层。欧姆电极包括与二维电子气体层欧姆接触的多个侧面。欧姆电极的至少一部分侧面不平行于沟道宽度方向。在本发明的优选实施例中，侧面具有锯齿形或梳齿形。由于欧姆电极和二维电子气体层之间的接触面积增加，所以欧姆电阻降低。

7. 发明申请

US20090315122A1 SEMICONDUCTOR DEVICE HAVING OHMIC RECESSED ELECTRODE 审中-公开
标题翻译：具有OHMIC电极的半导体器件
公开(公告)号：US20090315122A1
公开(公告)日：2009-12-24
申请号：US12549860
申请日：2009-08-28
申请人： Shinichi Hoshi , Masanori Itoh
发明人： Shinichi Hoshi , Masanori Itoh
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L21/28587 , H01L29/1608 , H01L29/2003 , H01L29/41766 , H01L29/66462
摘要： The present invention provides a semiconductor device having a recess-structured ohmic electrode, in which the resistance is small and variation in the resistance value caused by manufacturing irregularities is small. In the semiconductor device of the present invention, a two-dimensional electron gas layer is formed on the interface between a channel-forming layer and a Schottky layer by electrons supplied from the Schottky layer. The ohmic electrode comprises a plurality of side faces in ohmic contact with the two-dimensional electron gas layer. At least a part of side faces of the ohmic electrodes are non-parallel to a channel width direction. In a preferred embodiment of the present invention, the side faces have a saw tooth form or a comb tooth form. Since the contact area between the ohmic electrode and the two-dimensional electron gas layer is increased, ohmic resistance is reduced.
摘要翻译：本发明提供一种具有凹陷结构的欧姆电极的半导体器件，其中电阻小，并且由制造不规则性引起的电阻值的变化小。在本发明的半导体器件中，通过从肖特基层提供的电子，在沟道形成层和肖特基层之间的界面上形成二维电子气层。欧姆电极包括与二维电子气体层欧姆接触的多个侧面。欧姆电极的至少一部分侧面不平行于沟道宽度方向。在本发明的优选实施例中，侧面具有锯齿形或梳齿形。由于欧姆电极和二维电子气体层之间的接触面积增加，所以欧姆电阻降低。

8. 发明授权

US08906492B2 Formed article, method for producing the formed article, member for electronic device, and electronic device 有权
标题翻译：成型品，成型体的制造方法，电子器件用构件和电子器件
公开(公告)号：US08906492B2
公开(公告)日：2014-12-09
申请号：US13201003
申请日：2010-03-16
申请人： Yuta Suzuki , Takeshi Kondo , Shinichi Hoshi
发明人： Yuta Suzuki , Takeshi Kondo , Shinichi Hoshi
IPC分类号： B32B7/02 , C08J7/12 , C08J7/04
CPC分类号： C08J7/123 , C08J7/047 , C08J2367/03 , C08J2483/00 , C08J2483/16 , Y10T428/24942 , Y10T428/31667
摘要： A formed article includes a gas barrier layer that is formed of a material including at least an oxygen atom and a silicon atom, a surface area of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on the total content of oxygen atoms, nitrogen atoms, and silicon atoms, and having a film density of 2.4 to 4.0 g/cm3. A method of producing a formed article includes implanting ions into a surface layer part of a polysilazane compound-containing layer of a formed body that includes the polysilazane compound-containing layer in its surface layer part. An electronic device member includes the formed article. An electronic device includes the electronic device member. The formed article exhibits an excellent gas barrier capability, excellent folding resistance, and excellent transparency.
摘要翻译：成型体包括由至少包含氧原子和硅原子的材料形成的阻气层，阻气层的氧原子含有率为60〜75％的表面积，氮原子含有率为0〜10％，硅原子含有率为25〜35％，基于氧原子，氮原子和硅原子的总含量，膜密度为2.4〜4.0g / cm 3。制造成形体的方法包括将离子注入到其表层部分中包含聚硅氮烷化合物的层的成形体的含聚硅氮烷化合物的层的表层部分。电子装置构件包括成形制品。电子设备包括电子设备构件。成型体具有优异的阻气性，优异的抗折叠性和优异的透明性。

9. 发明申请

US20110274933A1 LAMINATE, METHOD FOR PRODUCING SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE 审中-公开
标题翻译：层压板，其制造方法，电子设备部件和电子设备
公开(公告)号：US20110274933A1
公开(公告)日：2011-11-10
申请号：US13128348
申请日：2009-12-11
申请人： Shinichi Hoshi , Takeshi Kondo , Seitaro Yamaguchi , Kazue Uemura , Yuta Suzuki
发明人： Shinichi Hoshi , Takeshi Kondo , Seitaro Yamaguchi , Kazue Uemura , Yuta Suzuki
IPC分类号： B32B13/04 , G21K5/00
CPC分类号： B32B27/08 , B32B27/281 , B32B27/285 , B32B27/286 , B32B27/288 , B32B27/308 , B32B27/32 , B32B27/325 , B32B27/34 , B32B27/36 , B32B27/365 , B32B2250/24 , B32B2255/10 , B32B2255/20 , B32B2255/28 , B32B2307/412 , B32B2307/558 , B32B2307/7242 , B32B2307/732 , B32B2457/00
摘要： A laminate comprises a gas barrier layer and an inorganic compound layer, the gas barrier layer being formed of a material that includes at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer having an oxygen atom content rate that gradually decreases from the surface of the gas barrier layer in the depth direction, and having a carbon atom content rate that gradually increases from the surface of the gas barrier layer in the depth direction. An electronic device member includes the laminate, and an electronic device includes the electronic device member. The laminate exhibits an excellent gas barrier capability and excellent transparency, and does not produce cracks (i.e., the gas barrier capability does not deteriorate) even when the laminate is folded. The laminate exhibits an excellent gas barrier capability and an excellent impact-absorbing capability even if an impact is applied from the outside.
摘要翻译：层压体包括气体阻隔层和无机化合物层，阻气层由至少包含氧原子，碳原子和硅原子的材料形成，所述阻气层的氧原子含有率为在气体阻挡层的深度方向的表面逐渐减少，并且具有从气体阻隔层的表面在深度方向逐渐增加的碳原子含有率。电子设备构件包括层压体，电子设备包括电子设备构件。层叠体具有优异的阻气性和优异的透明性，即使层叠体折叠也不产生裂纹（即阻气性不劣化）。即使从外部施加冲击，该层压体显示出优异的阻气性和优异的冲击吸收能力。

10. 发明申请

US20110068681A1 LUMINESCENT COMPOSITION AND INORGANIC ELECTROLUMINESCENT SHEET USING THE SAME 有权
标题翻译：使用其的发光组合物和无机电致发光片
公开(公告)号：US20110068681A1
公开(公告)日：2011-03-24
申请号：US12993610
申请日：2009-05-18
申请人： Satoshi Naganawa , Takashi Morioka , Naoki Taya , Takeshi Kondo , Kazue Saito , Yuko Iwamoto , Shinichi Hoshi , Yumiko Matsubayashi
发明人： Satoshi Naganawa , Takashi Morioka , Naoki Taya , Takeshi Kondo , Kazue Saito , Yuko Iwamoto , Shinichi Hoshi , Yumiko Matsubayashi
IPC分类号： H01J1/62 , C09K11/02 , B32B7/12
CPC分类号： H05B33/10 , C09K11/02 , C09K11/584 , H05B33/14 , H05B33/20
摘要： The present invention provides a luminescent composition which is capable of providing an inorganic electroluminescent sheet with a high productivity at low costs in an efficient manner, and has a desired light transmittance (transparency) when no electric voltage is applied thereto, an inorganic electroluminescent sheet obtained from the luminescent composition which can be mass-produced, and a process for producing the inorganic electroluminescent sheet. The present invention relates to a luminescent composition including an inorganic electroluminescent substance and a binder resin, wherein a content of the inorganic electroluminescent substance is not less than 0.5 part by mass and less than 100 parts by mass on the basis of 100 parts by mass of the binder resin; and an inorganic electroluminescent sheet including at least a first transparent substrate, a first transparent electrode, an inorganic electroluminescent layer, a first transparent electrode and a second transparent substrate which are successively laminated in this order, wherein the inorganic electroluminescent layer is formed from the above luminescent composition, and the inorganic electroluminescent sheet has a light transmittance of 60% or more as measured at a wavelength of 550 nm under a non-light emitting condition.
摘要翻译：本发明提供一种发光组合物，其能够以低成本有效地提供高生产率的无机电致发光片，并且当不施加电压时具有期望的透光率（透明度），获得的无机电致发光片从可以大量生产的发光组合物和无机电致发光片的制造方法。本发明涉及包含无机电致发光物质和粘合剂树脂的发光组合物，其中无机电致发光物质的含量不小于0.5质量份且小于100质量份，基于100质量份粘合剂树脂; 以及至少包括依次层叠的第一透明基板，第一透明电极，无机电致发光层，第一透明电极和第二透明基板的无机电致发光片，其中无机电致发光层由上述形成发光组合物，无机电致发光片在非发光条件下的波长550nm下的透光率为60％以上。

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