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    • 9. 发明授权
    • Magnetoresistive thin-film magnetic head and method of fabrication
thereof
    • 磁阻薄膜磁头及其制造方法
    • US5701221A
    • 1997-12-23
    • US416653
    • 1995-04-05
    • Akira TaniyamaMakoto MorijiriHaruko TanakaIsamu YuitoEiji AshidaHiroaki KoyanagiHideo TanabeTetsuo Kobayashi
    • Akira TaniyamaMakoto MorijiriHaruko TanakaIsamu YuitoEiji AshidaHiroaki KoyanagiHideo TanabeTetsuo Kobayashi
    • G11B5/31G11B5/39
    • G11B5/3906G11B5/3163G11B5/3903G11B5/3932
    • A magnetic domain controlling film for controlling the magnetic domain of a magnetoresistive film is formed by a patterning technique on a lower insulating film formed on a lower shield film. The magnetoresistive film is formed on the magnetic domain controlling film for converting a magnetic signal from a magnetic recording medium into an electrical signal using the magnetoresistive effect. A resist pattern is formed by the lift-off method on the magnetoresistive film in such a fashion as to leave a region of the magnetoresistive film corresponding to the tracks of the magnetic recording medium. A magnetoresistive element is formed by ion milling leaving only the portion of the magnetoresistive film corresponding to the tracks. An insulating layer is formed on the resist pattern, on the upper surface region of the lower insulating film other than the portion thereof right under the magnetic domain controlling film reduced in thickness by ion milling, and on the upper surface region of the magnetic domain controlling film other than the portion thereof right under the magnetoresistive film. An electrode film is formed on the insulating layer, after which the resist pattern is removed. The insulating layer is contiguously deposited on the upper surface region formed in a thin layer of the lower insulating film and on a part of the upper surface region formed in a thin layer of the magnetic domain controlling film.
    • 用于控制磁阻膜的磁畴的磁畴控制膜通过在下屏蔽膜上形成的下绝缘膜上的图案化技术形成。 磁阻膜形成在磁畴控制膜上,用于使用磁阻效应将来自磁记录介质的磁信号转换成电信号。 通过剥离方法在磁阻膜上形成抗蚀剂图案,以便留下与磁记录介质的轨道相对应的磁阻膜的区域。 通过离子铣削形成磁阻元件,仅留下对应于轨道的磁阻膜的部分。 绝缘层形成在抗蚀剂图案上,除了通过离子研磨在厚度减小的磁畴控制膜的正下方的部分的下部绝缘膜的上表面区域上形成绝缘层,并且在磁畴控制的上表面区域 膜之外的其它部分即刻在磁阻膜的正下方。 在绝缘层上形成电极膜,然后除去抗蚀剂图案。 绝缘层连续沉积在形成在下绝缘膜的薄层中的上表面区域和形成在磁畴控制膜的薄层中的上表面区域的一部分上。