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1. 发明授权

US5320708A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US5320708A
公开(公告)日：1994-06-14
申请号：US825279
申请日：1992-01-24
申请人： Shingo Kadomura , Masakazu Muroyama
发明人： Shingo Kadomura , Masakazu Muroyama
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3105 , H01L21/311 , H01L21/321 , H01L21/768 , H01L21/00
CPC分类号： H01L21/02063 , H01L21/3065 , H01L21/31051 , H01L21/31116 , H01L21/321 , H01L21/76819
摘要： A dry etching method by which the surface of a variety of materials constituting a semiconductor device may be planarized or smoothed under clean state. Small-sized recesses existing on the surface of a layer of the material to be etched are filled with deposited free sulfur yielded from sulfur halides, such as S.sub.2 F.sub.2 or S.sub.2 Cl.sub.2, into the plasma under conditions of dissociation produced by electrical discharge. After the surface of the material to be etched is planarized in this manner, etching is carried out under conditions of simultaneously removing the small-sized projections and deposited sulfur to successfully eliminate step differences or roughness on the material surface. Etching may alternatively be carried out under the condition of competition of filling of recesses with sulfur and removal of the projections. Sulfur may easily be removed on sublimation by heating the wafer after completion of etching without producing pollution by particles. The present invention may be applied to trimming of cross-sectional shape of the trenches or connection holes, surface smoothing of the WSi.sub.x layer formed by high temperature CVD or planarization of an interlayer insulating film used for covering the step differences.
摘要翻译：构成半导体器件的各种材料的表面可以在清洁状态下被平坦化或平滑化的干蚀刻方法。存在于待蚀刻材料层表面上的小尺寸凹槽在由放电产生的解离的条件下填充由硫卤化物（例如S2F2或S2Cl2）产生的沉积的游离硫。在被蚀刻材料的表面以这种方式平坦化后，在同时去除小尺寸突起和沉积硫的条件下进行蚀刻，以成功地消除材料表面上的步长差异或粗糙度。蚀刻也可以在用硫填充凹槽的竞争和去除突起的条件下进行。通过在蚀刻完成之后加热晶片而不会产生颗粒污染，可以在升华时容易地除去硫。本发明可以用于修整沟槽或连接孔的横截面形状，通过高温CVD形成的WSix层的表面平滑化或用于覆盖台阶差的层间绝缘膜的平坦化。

2. 发明申请

US20130061923A1 PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20130061923A1
公开(公告)日：2013-03-14
申请号：US13698190
申请日：2011-05-17
申请人： Masakazu Muroyama , Kazuaki Fukushima
发明人： Masakazu Muroyama , Kazuaki Fukushima
IPC分类号： H01L31/0384 , H01L31/18
CPC分类号： H01G9/2031 , H01G9/2059 , Y02E10/542
摘要： To provide a photoelectric conversion device having high conversion efficiency and a method for manufacturing the same. The photoelectric conversion device includes a working electrode that has a transparent electrode (2) and a porous metal oxide semiconductor layer (3) that is formed on a surface of the transparent electrode (2) and supported with a dye; a counter electrode (5); and an electrolyte layer (4), the hydroxyl group concentration on the surface of the oxide semiconductor layer is 0.01 groups/(nm)2 or more and 4.0 groups/(nm)2 or less, and the adsorbed water concentration on the surface thereof is 0.03 pieces/(nm)2 or more and 4.0 pieces/(nm)2 or less. The method for manufacturing a photoelectric conversion device includes a first step of forming a porous metal oxide semiconductor layer (3) on a surface of a transparent electrode (2), a second step of controlling the hydroxyl group concentration on the surface of the oxide semiconductor layer to be 0.01 groups/(nm)2 or more and 4.0 groups/(nm)2 or less and the adsorbed water concentration on the surface to be 0.03 pieces/nm2 or more and 4.0 pieces/(nm)2 or less by low temperature plasma processing under an oxidizing atmosphere, and a third step of supporting a dye in the oxide semiconductor layer.
摘要翻译：提供一种具有高转换效率的光电转换装置及其制造方法。光电转换装置包括具有透明电极（2）和多孔金属氧化物半导体层（3）的工作电极，该多孔金属氧化物半导体层（3）形成在透明电极（2）的表面上并用染料支撑; 对电极（5）; 和电解质层（4），氧化物半导体层表面的羟基浓度为0.01个/（nm）2〜4.0个/（nm）2以下，其表面吸附水浓度为0.03个/（nm）2以上且4.0个/（nm）2以下）。制造光电转换装置的方法包括在透明电极（2）的表面上形成多孔金属氧化物半导体层（3）的第一步骤，控制氧化物半导体的表面上的羟基浓度的第二步骤层为0.01组/（nm）2以上且4.0团/（nm）2以下，表面的吸附水浓度为0.03个/ nm 2以上且4.0个/（nm）2以下）在氧化气氛下进行高温等离子体处理，以及在氧化物半导体层中负载染料的第三工序。

3. 发明授权

US07166482B2 Cold cathode field emission device and process for the production thereof, and cold cathode field emission display and process for the production thereof 失效
公开(公告)号：US07166482B2
公开(公告)日：2007-01-23
申请号：US11105538
申请日：2005-04-14
申请人： Motohiro Toyota , Ichiro Saito , Toshiki Shimamura , Masakazu Muroyama
发明人： Motohiro Toyota , Ichiro Saito , Toshiki Shimamura , Masakazu Muroyama
IPC分类号： H01L21/00
CPC分类号： H01J1/304 , H01J9/025 , H01J31/127
摘要： A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is formed on the insulating layer. The support member is irradiated with exposure light from a back surface side of the support member through the hole as a mask for exposure. An electron-emitting-portion-forming-layer composed of a photosensitive material is formed at least inside the opening portion. The support member is irradiated with exposure light from a back surface side of the support member through the hole as a mask for exposure.

4. 发明授权

US07118927B2 Cold cathode field emission device and process for the production thereof, and cold cathode field emission display and process for the production thereof 失效
标题翻译：冷阴极场发射器件及其生产方法，以及冷阴极场发射显示及其生产方法
公开(公告)号：US07118927B2
公开(公告)日：2006-10-10
申请号：US11091448
申请日：2005-03-29
申请人： Motohiro Toyota , Ichiro Saito , Toshiki Shimamura , Masakazu Muroyama
发明人： Motohiro Toyota , Ichiro Saito , Toshiki Shimamura , Masakazu Muroyama
IPC分类号： H01L21/26 , H01L21/66
CPC分类号： H01J1/304 , H01J9/025 , H01J31/127
摘要： A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is formed on the insulating layer. The support member is irradiated with exposure light from a back surface side of the support member through the hole as a mask for exposure. An electron-emitting-portion-forming-layer composed of a photosensitive material is formed at least inside the opening portion. The support member is irradiated with exposure light from a back surface side of the support member through the hole as a mask for exposure.
摘要翻译：一种冷阴极场致发射器件的制造方法。阴极电极形成在透射曝光光的支撑构件的前表面上。在整个表面上形成绝缘层。在绝缘层上形成栅电极。通过作为掩模的曝光孔将来自支撑部件的背面侧的曝光光照射在支撑部件上。至少在开口部内部形成由感光材料构成的电子发射部分形成层。通过作为掩模的曝光孔将来自支撑部件的背面侧的曝光光照射在支撑部件上。

5. 发明申请

US20050176335A1 Cold cathode field emission device and process for the production thereof, and cold cathode field emission display and process for the production thereof 失效
公开(公告)号：US20050176335A1
公开(公告)日：2005-08-11
申请号：US11105538
申请日：2005-04-14
申请人： Motohiro Toyota , Ichiro Saito , Toshiki Shimamura , Masakazu Muroyama
发明人： Motohiro Toyota , Ichiro Saito , Toshiki Shimamura , Masakazu Muroyama
IPC分类号： H01J9/02 , H01J1/02 , H01J1/30 , H01J1/304 , H01J1/62 , H01J9/00 , H01J9/04 , H01J9/12 , H01J9/24 , H01J29/04 , H01J31/12 , H01L21/00 , H01L21/8238
CPC分类号： H01J1/304 , H01J9/025 , H01J31/127
摘要： A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is formed on the insulating layer. The support member is irradiated with exposure light from a back surface side of the support member through the hole as a mask for exposure. An electron-emitting-portion-forming-layer composed of a photosensitive material is formed at least inside the opening portion. The support member is irradiated with exposure light from a back surface side of the support member through the hole as a mask for exposure.

6. 发明授权

US6126514A Polishing slurry and polishing method using the same 失效
标题翻译：抛光浆和抛光方法使用相同
公开(公告)号：US6126514A
公开(公告)日：2000-10-03
申请号：US264690
申请日：1999-03-09
申请人： Masakazu Muroyama
发明人： Masakazu Muroyama
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , B24D3/02
CPC分类号： C09G1/02
摘要： A polishing slurry includes polishing abrasive grains and a polishing liquid containing at least one kind of a fatty acid and a fatty acid ester. The fatty acid is at least one kind selected from a group consisting of oleic acid, myristic acid, and stearic acid. The fatty acid ester is at least one kind selected from a group consisting of butyl stearate, hexyl stearate, heptyl stearate, butyl oleate, hexyl oleate, heptyl oleate, butyl myristate, hexyl myristate, and heptyl myristate. The polishing slurry is used for polishing a surface to be polished of a substance to be polished such as a wafer by bringing the surface to be polished into slide-contact with a polishing surface of a polishing plate mounted to a polishing table while supplying the polishing slurry on the polishing surface. The polishing slurry solves such a related art problem that upon CMP of an interlayer insulating film having a step, a polishing pressure applied to a lower portion of the step becomes equal to that applied to an upper portion of the step, to make the polishing rate at the lower portion of the step nearly equal to that at the upper portion of the step, thereby making it difficult to flatly polish the interlayer insulating film.
摘要翻译：抛光浆料包括抛光磨粒和含有至少一种脂肪酸和脂肪酸酯的抛光液。脂肪酸是选自油酸，肉豆蔻酸和硬脂酸中的至少一种。脂肪酸酯是选自硬脂酸丁酯，硬脂酸己酯，油酸辛酯，油酸丁酯，油酸庚酯，肉豆蔻酸丁酯，肉豆蔻酸己酯和肉豆蔻酸庚酯中的至少一种。抛光浆料用于通过使抛光表面与抛光板的抛光表面滑动接触来抛光待研磨物质的抛光表面，同时提供抛光浆料在抛光面上。抛光浆料解决了这样的现有技术问题：在具有台阶的层间绝缘膜的CMP上，施加到台阶的下部的研磨压力等于施加到台阶的上部的研磨压力，以使抛光速率在步骤的下部几乎等于台阶的上部，从而难以平坦地抛光层间绝缘膜。

7. 发明申请

US20100283386A1 DISPLAY DEVICE AND COMPOSITION FOR PRODUCING DISPLAY DEVICE, AND DISPLAY DEVICE 审中-公开
标题翻译：用于制造显示装置的显示装置和组合物以及显示装置
公开(公告)号：US20100283386A1
公开(公告)日：2010-11-11
申请号：US12812417
申请日：2008-12-19
申请人： Masakazu Muroyama , Ichiro Saito , Hiroaki Usui , Seiji Yokokura
发明人： Masakazu Muroyama , Ichiro Saito , Hiroaki Usui , Seiji Yokokura
IPC分类号： H01J1/62 , H01J9/00
CPC分类号： H01L51/5012 , H01L27/3211 , H01L51/0018 , H01L51/0053 , H01L51/0085
摘要： A light-emitting layer is provided between a first electrode and a second electrode. The light-emitting layer is formed through steps of: forming a composition layer including a radical initiator and a light-emitting material having radical-polymerization reactivity; exciting the composition layer to form in the composition layer a polymerized region where the composition layer is polymerized; and removing the composition layer except in the polymerized region.
摘要翻译：在第一电极和第二电极之间设置有发光层。通过以下步骤形成发光层：形成包含自由基引发剂和具有自由基聚合反应性的发光材料的组合物层; 激发组合物层以在组合物层中形成组合物层聚合的聚合区域; 除去聚合区域以外的组合物层。

8. 发明授权

US07195943B2 Cold cathode field emission device and process for the production thereof, and cold cathode field emission display and process for the production thereof 失效
公开(公告)号：US07195943B2
公开(公告)日：2007-03-27
申请号：US11091621
申请日：2005-03-29
申请人： Motohiro Toyota , Ichiro Saito , Toshiki Shimamura , Masakazu Muroyama
发明人： Motohiro Toyota , Ichiro Saito , Toshiki Shimamura , Masakazu Muroyama
IPC分类号： H01L21/00
CPC分类号： H01J1/304 , H01J9/025 , H01J31/127
摘要： A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is formed on the insulating layer. The support member is irradiated with exposure light from a back surface side of the support member through the hole as a mask for exposure. An electron-emitting-portion-forming-layer composed of a photosensitive material is formed at least inside the opening portion. The support member is irradiated with exposure light from a back surface side of the support member through the hole as a mask for exposure.

9. 发明授权

US5700736A Method for making semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5700736A
公开(公告)日：1997-12-23
申请号：US570653
申请日：1995-12-11
申请人： Masakazu Muroyama
发明人： Masakazu Muroyama
IPC分类号： H01L21/316 , H01L21/31 , H01L21/314 , H01L21/471 , H01L21/4763
CPC分类号： H01L21/31629 , C23C14/12 , C23C14/5826 , H01L21/02131 , H01L21/02211 , H01L21/02274 , H01L21/76837
摘要： An SiOF layer is formed by using as raw material an organic Si compound having Si-F bonds. Since an organic Si compound is used as raw material, an intermediate product being formed during the formation of an SiOF layer is liable to polymerize and has fluidity. Moreover, since the organic Si compound has Si-F bonds, low in bond energy, and is thus capable of easily getting only Si-F bonds separated, the SiOF layer is prevented from getting contaminated by reaction by-products and fluorine can be introduced into the SiOF layer in stable fashion. Therefore, an insulator layer, low in dielectric constant, low in hygroscopicity and excellent in step coverage, can be formed by using a low powered apparatus.
摘要翻译：通过使用具有Si-F键的有机Si化合物作为原料形成SiOF层。由于使用有机Si化合物作为原料，所以在形成SiOF层期间形成的中间产物易于聚合并具有流动性。此外，由于有机Si化合物具有Si-F键，结合能量低，因此能够容易地仅分离Si-F键，因此可防止SiOF层被反应副产物污染，并且可以引入氟以稳定的方式进入SiOF层。因此，通过使用低功率设备，可以形成介电常数低，吸湿性低，台阶覆盖性优异的绝缘体层。

10. 发明授权

US5578530A Manufacturing method of semiconductor device which includes forming a silicon nitride layer using a Si, N, and F containing compound 失效
标题翻译：包括使用含有Si，N和F的化合物形成氮化硅层的半导体器件的制造方法
公开(公告)号：US5578530A
公开(公告)日：1996-11-26
申请号：US501738
申请日：1995-07-12
申请人： Masakazu Muroyama , Hideyuki Kito
发明人： Masakazu Muroyama , Hideyuki Kito
IPC分类号： H01L21/3205 , H01L21/318 , H01L21/316
CPC分类号： H01L21/3185
摘要： In a manufacturing method of semiconductor device having a fluorine-containing SiN layer, an SiN layer excellent in the step coverage can be formed using as raw material an Si compound containing at least both nitrogen and fluorine, by virtue of an intermediate product which, during the formation of the above SiN layer, is formed, liable to polymerization and has fluidity. Moreover, as the above Si compound contains fluorine that is taken into the formation of the fluorine-containing SiN layer whose dielectric constant is lowered thereby, delay in circuit operation due to parasitic capacitances can be reduced.
摘要翻译：在具有含氟SiN层的半导体器件的制造方法中，可以通过中间产物，通过中间产物，以至少包含氮和氟两者的Si化合物为原料，形成阶梯覆盖度优异的SiN层形成上述SiN层，易于聚合并具有流动性。此外，由于上述Si化合物含有氟化物，其中介电常数降低的含氟SiN层的形成，因此可以减少由寄生电容引起的电路工作延迟。

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