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1. 发明授权

US07978744B2 Nitride based semiconductor laser device with oxynitride protective films on facets 有权
标题翻译：氮化物基半导体激光器件，面上有氮氧化物保护膜
公开(公告)号：US07978744B2
公开(公告)日：2011-07-12
申请号：US12236616
申请日：2008-09-24
申请人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
发明人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
IPC分类号： H01S5/028
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/0282
摘要： One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.
摘要翻译：氮化物基半导体激光器件的一个面由（0001）的解理面构成，另一个面由（000 1）的解理面构成。因此，一个面和另一个面分别是Ga极平面和N极平面。位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。在一个面上形成包括氮作为构成元素的第一保护膜。在另一方面形成包括氧作为构成元素的第二保护膜。

2. 发明授权

US07924898B2 Nitride based semiconductor laser device with oxynitride protective coatings on facets 失效
标题翻译：基于氮化物的半导体激光器件，具有氧氮化物保护涂层
公开(公告)号：US07924898B2
公开(公告)日：2011-04-12
申请号：US12236627
申请日：2008-09-24
申请人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
发明人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
IPC分类号： H01S5/028
CPC分类号： H01S5/32341 , H01S5/0282 , H01S5/0287 , H01S5/1082 , H01S5/227 , H01S5/3202 , H01S2301/176
摘要： One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.
摘要翻译：氮化物基半导体激光器件的一个面和另一个面分别由（0001）的解理面和（000 1）的解理面构成。因此，一个面和另一个面分别是Ga极平面和N极平面。位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。在一个面上形成包括氧作为构成元素的第一保护膜。在另一方面形成包括氮作为构成元素的第二保护膜。

3. 发明申请

US20090086783A1 NITRIDE BASED SEMICONDUCTOR LASER DEVICE 有权
标题翻译：基于氮化物的半导体激光器件
公开(公告)号：US20090086783A1
公开(公告)日：2009-04-02
申请号：US12236616
申请日：2008-09-24
申请人： Shingo KAMEYAMA , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
发明人： Shingo KAMEYAMA , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
IPC分类号： H01S5/026
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/0282
摘要： One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.
摘要翻译：氮化物基半导体激光器件的一个面由（0001）的解理面构成，其另一个面由（000

4. 发明申请

US20090086778A1 NITRIDE BASED SEMICONDUCTOR LASER DEVICE 失效
标题翻译：基于氮化物的半导体激光器件
公开(公告)号：US20090086778A1
公开(公告)日：2009-04-02
申请号：US12236627
申请日：2008-09-24
申请人： Shingo KAMEYAMA , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
发明人： Shingo KAMEYAMA , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01S5/0282 , H01S5/0287 , H01S5/1082 , H01S5/227 , H01S5/3202 , H01S2301/176
摘要： One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.
摘要翻译：氮化物基半导体激光器件的一个面和另一个面分别由（0001）的解理面和（000

5. 发明授权

US06768755B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06768755B2
公开(公告)日：2004-07-27
申请号：US09746065
申请日：2000-12-26
申请人： Daijiro Inoue , Ryoji Hiroyama , Kunio Takeuchi , Yasuhiko Nomura , Masayuki Hata
发明人： Daijiro Inoue , Ryoji Hiroyama , Kunio Takeuchi , Yasuhiko Nomura , Masayuki Hata
IPC分类号： H01S500
CPC分类号： H01S5/2231 , H01S5/06226 , H01S5/2206 , H01S5/2222 , H01S5/2226 , H01S5/2227
摘要： A depletion enhancement layer having a striped opening on the upper surface of a ridge portion, a low carrier concentration layer and an n-type current blocking layer are successively formed on a p-type cladding layer having the ridge portion. The low carrier concentration layer has a lower carrier concentration than the n-type current blocking layer. The band gap of the depletion enhancement layer is set to an intermediate level between the band gaps of the p-type cladding layer and the low carrier concentration layer. Alternatively, a first current blocking layer having a low carrier concentration and a second current blocking layer of the opposite conduction type are formed on an n-type depletion enhancement layer, and a p-type contact layer is formed on the second current blocking layer of the opposite conduction type and another p-type contact layer.
摘要翻译：在具有脊部的p型包覆层上依次形成具有在脊部上表面上的条纹开口的耗尽增强层，低载流子浓度层和n型电流阻挡层。低载流子浓度层的载流子浓度比n型电流阻挡层低。耗尽增强层的带隙被设定为p型覆层和低载流子浓度层的带隙之间的中间电平。或者，在n型耗尽增强层上形成具有低载流子浓度的第一电流阻挡层和相反导电型的第二电流阻挡层，并且在第二电流阻挡层上形成p型接触层相反的导电类型和另一个p型接触层。

6. 发明申请

US20090028204A1 SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20090028204A1
公开(公告)日：2009-01-29
申请号：US12179254
申请日：2008-07-24
申请人： Ryoji Hiroyama , Yasuhiko Nomura , Masayuki Hata , Yasuto Miyake
发明人： Ryoji Hiroyama , Yasuhiko Nomura , Masayuki Hata , Yasuto Miyake
IPC分类号： H01S5/026
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0206 , H01S5/2201 , H01S5/3202 , H01S2301/173
摘要： A semiconductor laser device includes a substrate made of a nitride-based semiconductor and a waveguide formed on a principal surface of the substrate, wherein the substrate includes a dislocation concentrated region arranged so as to obliquely extend with respect to the principal surface of the substrate, and the waveguide is so formed as to be located above the dislocation concentrated region and also located on a region except a portion where the dislocation concentrated region is present in the principal surface of the substrate.
摘要翻译：半导体激光器件包括由氮化物基半导体制成的衬底和形成在衬底的主表面上的波导，其中衬底包括布置成相对于衬底的主表面倾斜延伸的位错集中区域，并且波导被形成为位于位错集中区域之上并且还位于除了位错集中区域存在于基板的主表面中的部分之外的区域上。

7. 发明授权

US07869480B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07869480B2
公开(公告)日：2011-01-11
申请号：US12126365
申请日：2008-05-23
申请人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata , Kyoji Inoshita
发明人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata , Kyoji Inoshita
IPC分类号： H01S3/04
CPC分类号： H01S5/10 , H01L2224/73265 , H01L2924/01019 , H01S5/0207 , H01S5/02272 , H01S5/02276 , H01S5/3201
摘要： In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest.
摘要翻译：在半导体激光装置中，将半导体激光元件固定在基底上，使得半导体激光元件的翘曲的凸面与基体之间的距离随着半导体激光元件的翘曲沿对应于半导体激光元件的第一方向而变化在与距离最大的区域的附近对应的电极层的一部分周围设置引线接合部的情况下的空腔的延伸方向。

8. 发明申请

US20080317080A1 SEMICONDUCTOR LASER DEVICE 失效
标题翻译：半导体激光器件
公开(公告)号：US20080317080A1
公开(公告)日：2008-12-25
申请号：US12109124
申请日：2008-04-24
申请人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata
发明人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01S5/0207 , H01S5/02212 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/1039 , H01S5/3201 , H01S5/32341 , H01S5/4031 , H01L2924/00014 , H01L2924/00
摘要： In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an extensional direction of a cavity or a second direction, while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance between the convex side of the warp of the semiconductor laser element in at least either the first direction or the second direction of the semiconductor laser element and the base is substantially the smallest.
摘要翻译：在该半导体激光器件中，将半导体激光元件固定在基底上，使其翘曲的凸面与基底之间的距离至少沿着与拉伸方向对应的第一方向随着半导体激光元件的翘曲而变化在与第一半导体激光元件的翘曲的凸侧面之间的距离对应的区域附近的电极层的一部分附近设置引线接合部，半导体激光元件的方向或第二方向基本上最小。

9. 发明申请

US20080291958A1 SEMICONDUCTOR LASER DEVICE 失效
标题翻译：半导体激光器件
公开(公告)号：US20080291958A1
公开(公告)日：2008-11-27
申请号：US12126365
申请日：2008-05-23
申请人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata , Kyoji Inoshita
发明人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata , Kyoji Inoshita
IPC分类号： H01S3/04
CPC分类号： H01S5/10 , H01L2224/73265 , H01L2924/01019 , H01S5/0207 , H01S5/02272 , H01S5/02276 , H01S5/3201
摘要： In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest.
摘要翻译：在半导体激光装置中，将半导体激光元件固定在基底上，使得半导体激光元件的翘曲的凸面与基体之间的距离随着半导体激光元件的翘曲沿对应于半导体激光元件的第一方向而变化在与距离最大的区域的附近对应的电极层的一部分周围设置引线接合部的情况下的空腔的延伸方向。

10. 发明授权

US07907652B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07907652B2
公开(公告)日：2011-03-15
申请号：US12109124
申请日：2008-04-24
申请人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata
发明人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01S5/0207 , H01S5/02212 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/1039 , H01S5/3201 , H01S5/32341 , H01S5/4031 , H01L2924/00014 , H01L2924/00
摘要： In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an extensional direction of a cavity or a second direction, while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance between the convex side of the warp of the semiconductor laser element in at least either the first direction or the second direction of the semiconductor laser element and the base is substantially the smallest.
摘要翻译：在该半导体激光器件中，将半导体激光元件固定在基底上，使其翘曲的凸面与基底之间的距离至少沿着与拉伸方向对应的第一方向随着半导体激光元件的翘曲而变化在与第一半导体激光元件的翘曲的凸侧面之间的距离对应的区域附近的电极层的一部分附近设置引线接合部，半导体激光元件的方向或第二方向基本上最小。

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