专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6025636A Surface acoustic wave device incorporating single crystal LiNbO.sub.3 失效
标题翻译：结合单晶LiNbO3的表面声波器件
公开(公告)号：US6025636A
公开(公告)日：2000-02-15
申请号：US951615
申请日：1997-10-16
申请人： Hideaki Nakahata , Masashi Narita , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Masashi Narita , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
IPC分类号： H03H9/02 , H01L29/82
CPC分类号： H03H9/02582
摘要： A surface acoustic wave device includes at least diamond, a single crystal LiNbO.sub.3 layer formed on the diamond, and an interdigital transducer formed in contact with the LiNbO.sub.3 layer and uses a surface acoustic wave (wavelength: .lambda..sub.n .mu.m) in an nth-order mode (n=1 or 2). When the thickness of the LiNbO.sub.3 layer is t.sub.1 (.mu.m), kh.sub.1 =2.pi.(t.sub.1 /.lambda..sub.n) and the cut orientation (.theta., .PHI., and .psi. represented by an Eulerian angle representation) with respect to the crystallographic fundamental coordinate system of the LiNbO.sub.3 layer are selected from values within specific ranges. Consequently, a surface acoustic wave device which increases the propagation velocity (V) of a surface acoustic wave and improves the electromechanical coupling coefficient (K.sup.2) is realized.
摘要翻译：表面声波装置至少包括金刚石，形成在金刚石上的单晶LiNbO 3层和与LiNbO 3层接触形成的叉指换能器，并使用n阶的表面声波（波长：λnμm）模式（n = 1或2）。当LiNbO 3层的厚度为t1（μm）时，相对于晶体基础坐标系，kh1 =2π（t1 /λn）和切割取向（θ，PHI和由欧拉角表示的psi）的LiNbO 3层选自特定范围内的值。因此，实现了提高声表面波的传播速度（V）并提高机电耦合系数（K2）的声表面波装置。

2. 发明授权

US5903015A Field effect transistor using diamond 失效
标题翻译：场效应晶体管采用金刚石
公开(公告)号：US5903015A
公开(公告)日：1999-05-11
申请号：US528028
申请日：1995-09-14
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： H05H1/46 , H01L21/31 , H01L21/338 , H01L29/10 , H01L29/16 , H01L29/80 , H01L29/812 , H01L31/312
CPC分类号： H01L29/1602 , H01L29/1029
摘要： A field effect transistor in accordance with the present invention comprises a buffer layer made of a highly resistant diamond on a substrate; an active layer which is made of a conductive diamond on the buffer layer and has such a dopant concentration that conduction of carriers is metallically dominated thereby and such a thickness that dopant distribution is two-dimensionally aligned thereby; a cap layer made of a highly resistant diamond on the active layer; a gate electrode layer formed on the cap layer so as to make Schottky contact therewith; and a source electrode layer and a drain electrode layer which make ohmic contact with a laminate structure of said buffer, active and cap layers. Namely, the active layer is formed as a so-called .delta.-dope layer or pulse-dope layer doped with a conductive dopant, while being held between both highly resistant buffer and cap layers. Accordingly, even when the dopant concentration in the conductive diamond layer is increased, a high gain, as an excellent controllability and an excellent temperature-stability in operation characteristics can be obtained.
摘要翻译：根据本发明的场效应晶体管包括由衬底上的高抗性金刚石制成的缓冲层; 在缓冲层上由导电金刚石制成的有源层具有这样的掺杂剂浓度，使得载流子的导电由此被金属化地控制，并且这样的厚度使得掺杂剂分布由二维排列; 在有源层上由耐高度金刚石制成的盖层; 形成在所述盖层上以使其肖特基接触的栅电极层; 以及与所述缓冲层，活性层和盖层的叠层结构欧姆接触的源电极层和漏电极层。也就是说，有源层被形成为所谓的增量掺杂层或掺杂有导电掺杂剂的脉冲 - 掺杂层，同时保持在高电阻缓冲层和盖层之间。因此，即使当导电金刚石层中的掺杂剂浓度增加时，也可以获得作为优异的可控性和优异的操作特性温度稳定性的高增益。

3. 发明授权

US5891557A Surface acoustic wave device and diamond base material for the same 失效
公开(公告)号：US5891557A
公开(公告)日：1999-04-06
申请号：US839613
申请日：1997-04-15
申请人： Shin-ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo
发明人： Shin-ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/6436 , H03H3/08 , H03H9/02582 , H03H9/6433 , H03H9/6466 , Y10T428/24802 , Y10T428/24926 , Y10T428/24942 , Y10T428/24975 , Y10T428/265 , Y10T428/30
摘要： A diamond base material for surface acoustic wave device, which includes: a low-resistivity base material, and a high-resistivity diamond layer having a thickness of 5-50 .mu.m disposed on the low-resistivity base material.

4. 发明授权

US5844252A Field emission devices having diamond field emitter, methods for making same, and methods for fabricating porous diamond 失效
标题翻译：具有金刚石场致发射体的场致发射器件，其制造方法以及制造多孔金刚石的方法
公开(公告)号：US5844252A
公开(公告)日：1998-12-01
申请号：US690173
申请日：1996-07-25
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Tadashi Tomikawa , Shin-ichi Shikata
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Tadashi Tomikawa , Shin-ichi Shikata
IPC分类号： H01J1/304 , H01J1/02 , H01J1/14
CPC分类号： H01J1/3042 , H01J2201/30457
摘要： A field emission device according to the present invention comprises a support substrate; a cathode mounted on a surface of said support substrate; a first diamond portion located on any surface of said substrate, said first diamond portion substantially having an electrical connection with said cathode; a second diamond portion located on the substrate surface on which said first diamond portion is also located, said second diamond portion including plurality of diamond protuberances; and an anode positioned spaced apart from said first and second diamond portions, wherein a space is formed between said anode and said second diamond portion.
摘要翻译：根据本发明的场致发射器件包括支撑衬底; 阴极，其安装在所述支撑基板的表面上; 位于所述衬底的任何表面上的第一金刚石部分，所述第一金刚石部分基本上与所述阴极电连接; 位于所述第一金刚石部分也位于所述基底表面上的第二金刚石部分，所述第二金刚石部分包括多个金刚石突起; 以及与所述第一和第二金刚石部分间隔开的阳极，其中在所述阳极和所述第二金刚石部分之间形成空间。

5. 发明授权

US5783896A Diamond-Zn0 surface acoustic wave device 失效
标题翻译： Diamond-Zn0表面声波装置
公开(公告)号：US5783896A
公开(公告)日：1998-07-21
申请号：US791894
申请日：1997-01-31
申请人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
IPC分类号： H03H9/02 , H03H9/10 , H03H9/145
CPC分类号： H03H9/02582
摘要： A first surface acoustic wave device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention is a SAW device of "type A" device shown in FIG. 6A, wherein a parameter kh3=2.pi.(t.sub.A /.lambda.) is: 0.033.ltoreq.kh3.ltoreq.0.099, and wherein a parameter kh1=2.pi.(t.sub.z /.lambda.) and a parameter kh2=2.pi.(t.sub.s /.lambda.) are given within a region ABCDEFGHIJKLA in a two-dimensional Cartesin coordinate graph of FIG. 1.
摘要翻译：根据本发明的波长λ（μm）的第二模式表面声波的第一表面声波装置是图1所示的“A型”装置的SAW装置。其中参数kh3 =2π（tA /λ）为：0.033≤kh3

6. 发明授权

US06210780B1 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 有权
标题翻译：金刚石晶片，估计金刚石晶片和金刚石表面声波器件的方法
公开(公告)号：US06210780B1
公开(公告)日：2001-04-03
申请号：US09166840
申请日：1998-10-06
申请人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
发明人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
IPC分类号： H01L4118
CPC分类号： H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.
摘要翻译：通过用薄金属膜涂覆表面来检查金刚石晶体的表面，以倾斜的角度将激光束发射到金刚石表面，通过光束的散射检测金刚石表面上的缺陷和颗粒，并通过激光扫描计算缺陷和颗粒表面缺陷检测装置。金刚石SAW器件应在缺陷密度小于300颗粒cm-2的金刚石膜或块上制成。优选地，金刚石表面应具有小于Ra20nm的粗糙度。金刚石SAW滤波器可以通过沉积压电膜并在低缺陷密度的金刚石晶体上形成叉指式换能器来制造。

7. 发明授权

US5976909A Method of forming diamond heat sink comprising synthetic diamond film 失效
标题翻译：形成金刚石散热片的方法，包括合成金刚石膜
公开(公告)号：US5976909A
公开(公告)日：1999-11-02
申请号：US815781
申请日：1997-03-12
申请人： Hiromu Shiomi , Hideaki Nakahata , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Hiromu Shiomi , Hideaki Nakahata , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： H01L23/373 , H01L23/38 , H01L23/367
CPC分类号： H01L23/38 , H01L23/3732 , H01L2924/0002
摘要： A diamond heat sink is disclosed in this invention. The diamond heat sink has a support layer consisting of substantially undoped vapor phase synthetic diamond, a heat sensitive layer consisting of doped vapor phase synthetic diamond formed on the surface of the support layer; an insulation layer consisting of substantially undoped vapor phase synthetic diamond formed on a predetermined region of the heat sensitive layer; and an electrode formed on the heat sensitive layer. The electrode typically consists of a metal, preferably Ti/Mo/Au or Ti/Pt/Au. The diamond heat sink of the present invention may further include a highly-doped layer for creating Ohmic contacts with the metal electrode, which is made of the vapor phase synthetic diamond having high impurity levels, and which is disposed between the metal electrode and the heat sensitive layer.
摘要翻译：本发明公开了一种金刚石散热器。金刚石散热器具有由基本上未掺杂的气相合成金刚石构成的支撑层，由支撑层表面上形成的掺杂气相合成金刚石构成的热敏层; 由形成在热敏层的预定区域上的基本上未掺杂的气相合成金刚石构成的绝缘层; 以及形成在热敏层上的电极。电极通常由金属，优选Ti / Mo / Au或Ti / Pt / Au组成。本发明的金刚石散热器还可以包括高掺杂层，用于与金属电极产生欧姆接触，该金属电极由具有高杂质水平的气相合成金刚石制成，并且设置在金属电极和热敏感层。

8. 发明授权

US5750243A Surface acoustic wave device and diamond base material for the same 失效
公开(公告)号：US5750243A
公开(公告)日：1998-05-12
申请号：US521382
申请日：1995-06-16
申请人： Shin-ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo
发明人： Shin-ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/6436 , H03H3/08 , H03H9/02582 , H03H9/6433 , H03H9/6466 , Y10T428/24802 , Y10T428/24926 , Y10T428/24942 , Y10T428/24975 , Y10T428/265 , Y10T428/30
摘要： A diamond base material for surface acoustic wave device, which includes: a low-resistivity base material, and a high-resistivity diamond layer having a thickness of 5-50 .mu.m disposed on the low-resistivity base material.

9. 发明授权

US5600156A Diamond semiconductor device with P-I-N type multilayer structure 失效
标题翻译：具有P-I-N型多层结构的金刚石半导体器件
公开(公告)号：US5600156A
公开(公告)日：1997-02-04
申请号：US303112
申请日：1994-09-08
申请人： Yoshiki Nishibayashi , Tadashi Tomikawa , Shin-ichi Shikata
发明人： Yoshiki Nishibayashi , Tadashi Tomikawa , Shin-ichi Shikata
IPC分类号： C30B29/04 , H01L29/16 , H01L29/74 , H01L29/772 , H01L29/861 , H01L31/0312 , H01L29/167 , H01L31/075
CPC分类号： H01L29/1602 , H01L29/74 , H01L29/7722
摘要： A diamond semiconductor device of the present invention comprises an n-type diamond layer to which an n-type dopant is doped at high concentration so that metal conduction dominates, a p-type diamond layer to which a p-type dopant is doped at high concentration so that metal conduction dominates, and a high resistance diamond layer formed between the n-type diamond layer and the p-type diamond layer. Here, the thickness and the doping concentration of the high resistance diamond layer are values at which semiconductor conduction dominates. Then, in a case that an applied voltage is forward bias, electrons are injected from the n-type region to the p-type region through the conduction band of the high resistance region, and holes are injected from the p-type region to the n-type region through the valance band of the high resistance region, so that a current flows. On the other hand, in a case that an applied voltage is reverse bias because substantially no dopant is doped to the high resistance diamond layer, carriers are not present, so that a large current does not flow. Therefore, semiconductor conduction dominates as carrier conduction in pn junction and the rectification can be obtained, so that with the control of carriers, good diode characteristics or transistor characteristics can be achieved.
摘要翻译：本发明的金刚石半导体器件包括n型金刚石层，以高浓度掺杂n型掺杂剂以使金属导电占主导地位，p型掺杂剂掺杂在高的p型金刚石层浓度使得金属导电占主导地位，并且在n型金刚石层和p型金刚石层之间形成高电阻金刚石层。这里，高电阻金刚石层的厚度和掺杂浓度是半导体传导占主导地位的值。然后，在施加的电压为正向偏压的情况下，通过高电阻区域的导带从n型区域向p型区域注入电子，从p型区域注入空穴 n型区域通过高电阻区域的价带，使得电流流动。另一方面，在施加的电压为反向偏压的情况下，由于基本上没有掺杂剂掺杂到高电阻金刚石层，所以不存在载流子，使得大的电流不流动。因此，半导体传导作为pn结中的载流子导通，可以获得整流，因此通过载流子的控制，可以实现良好的二极管特性或晶体管特性。

10. 发明授权

US5527735A Ohmic electrode of n-type semiconductor cubic boron nitride and method of producing same 失效
标题翻译： n型半导体立方氮化硼的欧姆电极及其制造方法
公开(公告)号：US5527735A
公开(公告)日：1996-06-18
申请号：US428445
申请日：1995-04-25
申请人： Tadashi Tomikawa , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Tadashi Tomikawa , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： H01L29/43 , H01L21/28 , H01L21/285 , H01L29/45 , H01L33/30 , H01L33/32 , H01L33/40 , H01L21/44
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/452 , H01L33/32 , Y10S148/113
摘要： N-type c-BN is a heat-resistant material with a wide band gap. Ohmic electrodes are indispensable for making semiconductor devices utilizing n-type c-BN. The electrodes proposed so far are likely to deteriorate in an atmosphere of high temperature. The degradation of electrodes hinders the production of semiconductor devices utilizing c-BN. A heat-resistant ohmic electrode is produced by forming a low contact resistance layer of a boride or a nitride of Ti, Zr or Hf on a heated c-BN and by covering the low resistance layer by an Au layer. Otherwise an ohmic electrode is produced by forming a low contact resistance layer of one of Ti, Zr, Hf, etc. on c-BN, making a diffusion barrier layer of W, Mo, Ta or Pt and depositing an Au layer on the diffusion barrier layer.
摘要翻译： N型c-BN是具有宽带隙的耐热材料。欧姆电极对于制造使用n型c-BN的半导体器件是必不可少的。目前提出的电极在高温环境中可能会劣化。电极的降解阻碍了利用c-BN的半导体器件的生产。通过在加热的c-BN上形成硼化物或Ti，Zr或Hf的氮化物的低接触电阻层，并通过Au层覆盖低电阻层来制造耐热欧姆电极。另外，通过在c-BN上形成Ti，Zr，Hf等中的一个的低接触电阻层来制造欧姆电极，制成W，Mo，Ta或Pt的扩散阻挡层，并在扩散层上沉积Au层阻挡层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式