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1. 发明申请

US20170225957A1 REACTION FURNACE FOR PRODUCING POLYCRYSTALLINE SILICON, APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON, METHOD FOR PRODUCING POLYCRYSTALLINE SILICON, AND POLYCRYSTALLINE SILICON ROD OR POLYCRYSTALLINE SILICON INGOT 审中-公开
公开(公告)号：US20170225957A1
公开(公告)日：2017-08-10
申请号：US15501715
申请日：2015-07-29
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shigeyoshi NETSU , Naruhiro HOSHINO , Tetsuro OKADA , Hiroshi SAITO
IPC分类号： C01B33/035 , C23C16/24 , C23C16/46 , B01J19/08
CPC分类号： C01B33/035 , B01J19/087 , B01J2219/0801 , B01J2219/0803 , C23C16/24 , C23C16/46
摘要： A reaction furnace for producing a polycrystalline silicon according to the present invention is designed so as to have an in-furnace reaction space in which a reaction space cross-sectional area ratio (S=[S0−SR]/SR) satisfies 2.5 or more, which is defined by an inner cross-sectional area (So) of a reaction furnace, which is perpendicular to a straight body portion of the reaction furnace, and a total sum (SR) of cross-sectional areas of polycrystalline silicon rods that are grown by precipitation of polycrystalline silicon, in a case where a diameter of the polycrystalline silicon rod is 140 mm or more. Such a reaction furnace has a sufficient in-furnace reaction space even when the diameter of the polycrystalline silicon rod has been expanded, and accordingly an appropriate circulation of a gas in the reaction furnace is kept.

2. 发明申请

US20170190585A1 METHOD FOR PURIFYING CHLOROSILANE 审中-公开
公开(公告)号：US20170190585A1
公开(公告)日：2017-07-06
申请号：US15325127
申请日：2015-07-02
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shuichi MIYAO , Masahiko ISHIDA , Atsushi YOSHIDA , Shigeyoshi NETSU
IPC分类号： C01B33/107 , B01D3/14
CPC分类号： C01B33/10794 , B01D3/14 , C01B33/107 , C01B33/1071 , C01B33/10789
摘要： First, at least one of silanol and a siloxane compound is generated in a chlorosilane (S101). In the step, for example, an inert gas having a moisture concentration of 0.5 to 2.5 ppm is brought into contact with the chlorosilane to dissolve the moisture, and at least one of silanol and a siloxane compound is generated through a hydration reaction of a moiety of the chlorosilane. Next, a boron-containing compound contained in the chlorosilane is reacted with the silanol or the siloxane compound, thereby converting the boron-containing compound to a boron oxide (S102). Through the step (S102), the boron-containing compound being a low boiling point compound is converted to a boron oxide being a high boiling point compound, and therefore the difference in boiling point from the boiling point of chlorosilane becomes larger to make later separation easy.

3. 发明申请

US20170073235A1 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON ROD, POLYCRYSTALLINE SILICON ROD, AND POLYCRYSTALLINE SILICON MASS 审中-公开
标题翻译：生产多晶硅，多晶硅和多晶硅质量的方法
公开(公告)号：US20170073235A1
公开(公告)日：2017-03-16
申请号：US15309218
申请日：2015-05-27
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Shuichi MIYAO , Junichi OKADA , Shigeyoshi NETSU
IPC分类号： C01B33/035
CPC分类号： C01B33/035 , C30B29/06
摘要： A polycrystalline silicon rod is synthesized by the Siemens method (S101). After the polycrystalline silicon rod is covered from above with a plastic bag whose inner surface has been washed, and housed in the plastic bag in a reactor (S103), the polycrystalline silicon rod is removed out of the reactor (S104), and heat-sealed and stored in an enclosed state (S105). According to the present invention, steps conventionally considered as essential, such as washing, etching, and water washing, are not always necessary, and therefore the concentrations of fluorine ions, nitrate ions, and nitrogen dioxide ions remaining on the surface can each be less than 0.2 ppbw. In addition, by covering with the plastic bag, the metal contamination levels decrease significantly. Moreover, when the handling according to the present invention is performed, surface contamination hardly proceeds even if the polycrystalline silicon rod is stored for a long period.
摘要翻译：通过西门子方法合成多晶硅棒（S101）。在多晶硅棒被内表面洗涤后的塑料袋上覆盖多晶硅棒（S103）后，多晶硅棒从反应器中取出（S104），密封并以封闭状态存储（S105）。根据本发明，通常认为是洗涤，蚀刻和水洗等必不可少的步骤并不总是必需的，因此残留在表面上的氟离子，硝酸根离子和二氧化氮离子的浓度各自可以更少超过0.2 ppbw。另外，通过覆盖塑料袋，金属污染水平显着下降。此外，当执行根据本发明的处理时，即使多晶硅棒长期储存，表面污染几乎不进行。

4. 发明申请

US20150345862A1 METHOD FOR CLEANING BELL JAR, METHOD FOR PRODUCING POLYCRYSTALLINE SILICON, AND APPARATUS FOR DRYING BELL JAR 审中-公开
标题翻译：用于清洁贝尔罐的方法，用于生产多晶硅的方法和用于干燥贝壳的装置
公开(公告)号：US20150345862A1
公开(公告)日：2015-12-03
申请号：US14822378
申请日：2015-08-10
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Yasushi KUROSAWA , Kyoji OGURO , Shinichi KUROTANI , Shigeyoshi NETSU
IPC分类号： F26B5/04 , C23C16/44
CPC分类号： F26B5/042 , B08B3/04 , B08B3/10 , C01B33/035 , C23C16/4407 , F26B5/12 , F28G13/00
摘要： A bell jar includes a metallic bell jar (1), and a metallic base plate (2) on which the bell jar (1) is placed, and packing (3) seals an inside of a container. To the base plate (2), a pressure gauge (4), a gas introduction line (5), and a gas discharge line (6) are connected so as to allow monitoring of internal pressure of the bell jar (1) and introduction and discharge of a gas. A vacuum pump (7) is provided in a path of the gas discharge line (6), and the vacuum pump (7) reduces internal pressure of the bell jar so as to be lower than vapor pressure of water. The vacuum pump (7) reduces the internal pressure of the bell jar so as to be lower than vapor pressure of water, thereby efficiently removing moisture, and completing drying of the bell jar in a short time.
摘要翻译：钟形瓶包括金属钟形瓶（1）和金属底板（2），其上放置钟形罩（1），并且包装（3）密封容器的内部。连接到基板（2）上的压力计（4），气体引入管线（5）和气体排出管线（6），以便监测钟罩（1）的内部压力和引入并排出气体。真空泵（7）设置在气体排出管路（6）的路径中，真空泵（7）将钟罩的内部压力降低到低于水的蒸汽压力。真空泵（7）将钟罩的内部压力降低到低于水的蒸汽压力，从而有效地去除水分，并在短时间内完成钟罩的干燥。

5. 发明申请

US20150247239A1 CARBON ELECTRODE AND APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON ROD 审中-公开
标题翻译：用于制造多晶硅线的碳电极和装置
公开(公告)号：US20150247239A1
公开(公告)日：2015-09-03
申请号：US14715952
申请日：2015-05-19
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shigeyoshi NETSU , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume , Masaru Hirahara
IPC分类号： C23C16/458 , C23C16/24
CPC分类号： C23C16/458 , C01B32/225 , C01B33/035 , C23C16/24
摘要： The upper electrode 31 has a hole 35 extending from an upper surface 33 to a lower surface 34, a bolt 36 is inserted from the upper surface 33 of the upper electrode 31 into the hole 35, and secured in a lower electrode 32 by a screw. A gap 51 between an inside of the hole 35 and a straight body portion of the bolt 36 allows the upper electrode 31 to slide in all directions in a placement surface (upper surface of the lower electrode 32 in contact with the lower surface 34 of the upper electrode 31 in FIG. 2) that is a contact surface with an upper surface of the lower electrode 32, thereby providing an effect of preventing occurrence of a crack or a break in a U rod that can be expanded and contracted in all directions during a vapor phase growth process.
摘要翻译：上电极31具有从上表面33延伸到下表面34的孔35，将螺栓36从上电极31的上表面33插入孔35中，并通过螺钉固定在下电极32中。孔35的内部和螺栓36的直体部之间的间隙51允许上电极31在放置表面（在下电极32的下表面34的上表面）的所有方向上滑动作为与下部电极32的上表面的接触面的图2中的上部电极31），由此提供防止U棒的发生龟裂或断裂的效果，U棒能够在各个方向上膨胀和收缩气相生长过程。

6. 发明申请

US20200239320A1 REACTION FURNACE FOR PRODUCING POLYCRYSTALLINE SILICON, APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON, METHOD FOR PRODUCING POLYCRYSTALLINE SILICON, AND POLYCRYSTALLINE SILICON ROD OR POLYCRYSTALLINE SILICON INGOT 审中-公开
公开(公告)号：US20200239320A1
公开(公告)日：2020-07-30
申请号：US16845779
申请日：2020-04-10
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shigeyoshi NETSU , Naruhiro HOSHINO , Tetsuro OKADA , Hiroshi SAITO
IPC分类号： C01B33/035 , C23C16/46 , C23C16/24 , B01J19/08
摘要： A reaction furnace for producing a polycrystalline silicon according to the present invention is designed so as to have an in-furnace reaction space in which a reaction space cross-sectional area ratio (S=[SO−SR]/SR) satisfies 2.5 or more, which is defined by an inner cross-sectional area (So) of a reaction furnace, which is perpendicular to a straight body portion of the reaction furnace, and a total sum (SR) of cross-sectional areas of polycrystalline silicon rods that are grown by precipitation of polycrystalline silicon, in a case where a diameter of the polycrystalline silicon rod is 140 mm or more. Such a reaction furnace has a sufficient in-furnace reaction space even when the diameter of the polycrystalline silicon rod has been expanded, and accordingly an appropriate circulation of a gas in the reaction furnace is kept.

7. 发明申请

US20170210630A1 METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON BAR AND POLYCRYSTALLINE SILICON BAR 审中-公开
公开(公告)号：US20170210630A1
公开(公告)日：2017-07-27
申请号：US15327693
申请日：2015-07-28
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shuichi MIYAO , Shigeyoshi NETSU
IPC分类号： C01B33/035 , G01N23/225 , G01N23/207 , C01B33/02 , G01N23/203
CPC分类号： C01B33/035 , C01B33/02 , C01P2002/60 , G01N23/203 , G01N23/207 , G01N23/225
摘要： In the present invention, when polycrystalline silicon bar is manufactured by the Siemens method, polycrystalline silicon is deposited, for example, under the conditions that during performing the deposition reaction of polycrystalline silicon, the reaction temperature is set to fall within a range from 1100° C. to 1150° C. and the internal pressure of the furnace is controlled to fall within a range from 0.45 to 0.9 MPa. By controlling the internal pressure of the furnace so as to fall within such a range, it is possible to obtain a polycrystalline silicon bar having an average value of the crystal grain sizes of 6 μm or less, based on the crystal grain sizes evaluated by the EBSD method in arbitrary portions.

8. 发明申请

US20160187268A1 METHOD FOR EVALUATING CRYSTAL GRAIN SIZE DISTRIBUTION OF POLYCRYSTALLINE SILICON 审中-公开
标题翻译：评估多晶硅晶粒尺寸分布的方法
公开(公告)号：US20160187268A1
公开(公告)日：2016-06-30
申请号：US14892375
申请日：2014-06-03
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Shuichi MIYAO , Shigeyoshi NETSU
IPC分类号： G01N23/207 , C30B29/06 , C30B13/00 , C01B33/02 , C30B15/00
CPC分类号： G01N23/207 , C01B33/02 , C30B13/00 , C30B15/00 , C30B29/06 , G01N2223/3306 , G01N2223/606
摘要： The method comprises following steps; a collected disk sample (20) is disposed at a position where Bragg reflection from a Miller index plane is detected; the disk sample (20) is rotated in-plane about the center thereof by a rotation angle φ so that an X-ray irradiation region defined by a slit φ-scans the principal plane of the disk sample (20); a chart showing the dependence of intensity of the Bragg reflection on the rotation angle (φ) of the disk sample (20) is determined; the amount of change per a unit rotation angle of diffraction intensity of a baseline of the φ scan chart is determined as a first derivative value; skewness in the normal distribution of the absolute value of the amount of change is calculated; and the skewness is used as an evaluation index of the crystal grain size distribution to select polycrystalline silicon.
摘要翻译：该方法包括以下步骤：收集的盘样品（20）设置在检测来自米勒分度平面的布拉格反射的位置; 磁盘样品（20）围绕其中心以平面旋转角度旋转角度使得由狭缝限定的X射线照射区域 - 扫描盘样品（20）的主平面; 确定了布拉格反射强度对圆盘样品（20）旋转角度（＆phgr）的依赖性的图表。每个单位基准线的衍射强度单位旋转角度的变化量扫描图被确定为一阶导数值; 计算出变化量绝对值正态分布的偏差; 并且使用偏度作为晶粒尺寸分布的评价指标，以选择多晶硅。

9. 发明申请

US20180339908A1 POLYCRYSTALLINE SILICON MASS AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON MASS 审中-公开
公开(公告)号：US20180339908A1
公开(公告)日：2018-11-29
申请号：US16050767
申请日：2018-07-31
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shigeyoshi NETSU , Junichi OKADA , Fumitaka Kume
IPC分类号： C01B33/035 , C01B33/037
摘要： The present invention provides a clean and high-purity polycrystalline silicon mass having a small content of chromium, iron, nickel, copper, and cobalt in total, which are heavy metal impurities that reduce the quality of single-crystal silicon. In the vicinity of an electrode side end of a polycrystalline silicon rod obtained by the Siemens method, the total of the chromium, iron, nickel, copper, and cobalt concentrations is high. Accordingly, before a crushing step of a polycrystalline silicon rod 100, a removing step of removing at least 70 mm of a polycrystalline silicon portion from the electrode side end of the polycrystalline silicon rod 100 extracted to the outside of a reactor is provided. Thereby, the polycrystalline silicon portion in which the total of the chromium, iron, nickel, copper, and cobalt concentrations in a bulk is not less than 150 ppta can be removed.

10. 发明申请

US20170283986A1 POLYCRYSTALLINE SILICON, FZ SINGLE CRYSTAL SILICON, AND METHOD FOR PRODUCING THE SAME 审中-公开
公开(公告)号：US20170283986A1
公开(公告)日：2017-10-05
申请号：US15432171
申请日：2017-02-14
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shuichi MIYAO , Shigeyoshi NETSU
IPC分类号： C30B28/14 , C30B29/06 , C23C16/24 , C30B13/08
CPC分类号： C30B28/14 , C01B33/035 , C23C16/24 , C30B13/00 , C30B13/08 , C30B29/06 , C30B35/007
摘要： When FZ single crystal silicon is produced from polycrystalline silicon, which is synthesized by the Siemens method followed by being subjected to thermal treatment and includes crystal grains having a Miller index plane or as a principal plane and grown by the thermal treatment, and in which the X-ray diffraction intensity from either of the Miller index planes and after the thermal treatment is 1.5 times or less the X-ray diffraction intensity before the thermal treatment, as raw material, disappearance of crystal lines in the step of forming an FZ single crystal is markedly prevented.

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