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1. 发明申请

US20090241924A1 Circuit configuration for switching current flow through an ignition coil 有权
标题翻译：用于切换通过点火线圈的电流的电路配置
公开(公告)号：US20090241924A1
公开(公告)日：2009-10-01
申请号：US12316298
申请日：2008-12-10
申请人： Shike Hu , Rainer Topp , Thomas Jacke , Christian Pluntke
发明人： Shike Hu , Rainer Topp , Thomas Jacke , Christian Pluntke
IPC分类号： F02P9/00
CPC分类号： F02P3/0435 , F02D2041/2058 , F02D2041/2075
摘要： A circuit configuration for switching current flow through an ignition coil, in which the switching process is able to be executed by at least one first transistor that is controllable by a control signal which is able to be supplied via a control signal input of the circuit configuration, and the control signal input is connected to at least one variable resistor.
摘要翻译：一种用于切换通过点火线圈的电流的电路配置，其中开关处理能够由能够经由电路配置的控制信号输入提供的控制信号控制的至少一个第一晶体管执行，并且控制信号输入连接到至少一个可变电阻器。

2. 发明授权

US08074631B2 Circuit configuration for switching current flow through an ignition coil 有权
标题翻译：用于切换通过点火线圈的电流的电路配置
公开(公告)号：US08074631B2
公开(公告)日：2011-12-13
申请号：US12316298
申请日：2008-12-10
申请人： Shike Hu , Rainer Topp , Thomas Jacke , Christian Pluntke
发明人： Shike Hu , Rainer Topp , Thomas Jacke , Christian Pluntke
IPC分类号： F02P3/05
CPC分类号： F02P3/0435 , F02D2041/2058 , F02D2041/2075
摘要： A circuit configuration for switching current flow through an ignition coil, in which the switching process is able to be executed by at least one first transistor that is controllable by a control signal which is able to be supplied via a control signal input of the circuit configuration, and the control signal input is connected to at least one variable resistor.
摘要翻译：一种用于切换通过点火线圈的电流的电路配置，其中开关处理能够由能够经由电路配置的控制信号输入提供的控制信号控制的至少一个第一晶体管执行，并且控制信号输入连接到至少一个可变电阻器。

3. 发明申请

US20050151161A1 Electronic assembly 有权
标题翻译：电子组装
公开(公告)号：US20050151161A1
公开(公告)日：2005-07-14
申请号：US10495233
申请日：2002-10-15
申请人： Rainer Topp , Dirk Balszunat , Christoph Ruf , Andreas Fischer
发明人： Rainer Topp , Dirk Balszunat , Christoph Ruf , Andreas Fischer
IPC分类号： H01L23/13 , H01L23/498 , H01L23/538 , H01L25/16 , H01L29/73
CPC分类号： H01L25/162 , H01L23/13 , H01L23/49833 , H01L23/5385 , H01L2924/0002 , H01L2924/00
摘要： An electronic system having a sandwich design and including two carriers, each carrier having a printed circuit layer, the upper printed circuit layer being positioned on different planes.
摘要翻译：具有夹层结构并包括两个载体的电子系统，每个载体具有印刷电路层，上部印刷电路层位于不同的平面上。

4. 发明授权

US06538289B1 Smart power component 失效
标题翻译：智能电源组件
公开(公告)号：US06538289B1
公开(公告)日：2003-03-25
申请号：US09701400
申请日：2000-09-26
申请人： Rainer Topp , Wolfgang Troelenberg
发明人： Rainer Topp , Wolfgang Troelenberg
IPC分类号： H01L2362
CPC分类号： H01L29/7815 , H01L29/7395 , H03K17/08142 , H03K17/0822
摘要： A power component is proposed which reliably switches inductive loads and has a current detection element to detect the current through the inductive load. The component includes a protective element which is connected to the source terminals of the sense element and of the actuator. The protective element protects against parasitic effects between the sense element and the actuator.
摘要翻译：提出了能够可靠地切换感性负载并具有电流检测元件以检测通过感性负载的电流的功率分量。该部件包括连接到感测元件和致动器的源极端子的保护元件。保护元件防止感测元件和致动器之间的寄生效应。

5. 发明授权

US5523714A Monolithically integrated MOS output-stage component with overload-protection means 失效
标题翻译：具有过载保护功能的单片式MOS输出级元件
公开(公告)号：US5523714A
公开(公告)日：1996-06-04
申请号：US256213
申请日：1994-06-24
申请人： Rainer Topp , Manfred Uebele
发明人： Rainer Topp , Manfred Uebele
IPC分类号： H03K17/08 , H03K17/082 , H03K17/14 , H03K17/687 , H03K3/42 , H03K5/08
CPC分类号： H03K17/145 , H03K17/0822
摘要： A monolithically integrated MOS output-stage component is proposed which is provided with an output-stage element (10) having a GATE connection, a SOURCE connection, and a DRAIN connection, and having an overload-protection device. An integrated GATE series resistor (11) is provided which connects an outer GATE connection (Ga) of the output-stage component with the GATE connection (Gi) of the output-stage element (10). The overload-protection device is integrated in the output-stage component and has a level matching stage (30) which, by a defined flow through the GATE series resistor (11), effects a displacement of the transmission characteristic of the output-stage element (10) by a defined voltage offset value. Furthermore, a limiting stage (34) is provided which limits the sum value of the DRAIN-SOURCE voltage and a voltage proportional to the DRAIN current to a determinable value. In this way, an overload-protection device in monolithically integrated form is obtained at favorable cost with improved protective function, in which connection the physical limits of the semiconductor can be more strongly utilized.
摘要翻译： PCT No.PCT / DE93 / 00949 Sec。 371日期：1994年6月24日 102（e）日期1994年6月24日PCT提交1993年10月7日PCT公布。公开号WO94 / 10753 日期为1994年5月11日。提出了具有GATE连接，SOURCE连接和DRAIN连接的输出级元件（10）并具有过载保护装置的单片集成MOS输出级组件。提供集成的GATE串联电阻器（11），其将输出级组件的外部GATE连接（Ga）与输出级元件（10）的GATE连接（Gi）连接。过载保护装置集成在输出级组件中，具有电平匹配级（30），通过GATE串联电阻（11）的限定流量，可以实现输出级元件的传输特性的位移（10）通过定义的电压偏移值。此外，提供限制级（34），其将漏极 - 源极电压的和值和与漏极电流成比例的电压限制到可确定的值。以这种方式，通过改进的保护功能，以良好的成本获得了单片集成形式的过载保护装置，其中连接可以更有力地利用半导体的物理极限。

6. 发明授权

US5424892A Circuit for protecting a MOSFET power transistor 失效
标题翻译：用于保护MOSFET功率晶体管的电路
公开(公告)号：US5424892A
公开(公告)日：1995-06-13
申请号：US256485
申请日：1994-07-06
申请人： Rainer Topp , Roland Schmid , Dagmar Oertel
发明人： Rainer Topp , Roland Schmid , Dagmar Oertel
IPC分类号： H03K17/08 , H03K17/0412 , H03K17/082 , H03K17/687 , H02H9/02
CPC分类号： H03K17/04123 , H03K17/0822 , H01L2924/0002 , Y10S323/908
摘要： A circuit for protecting a MOSFET power transistor, the circuit having a variable input impedance in which the rate of rise of voltage is to be increased and thus the switching time reduced. For this purpose, a second MOSFET auxiliary transistor is connected by its bulk electrode to the source of the MOSFET power transistor. The source of the second MOSFET auxiliary transistor is connected to the gate of a third MOSFET auxiliary transistor and to the gate of the MOSFET power transistor. The drain of the second MOSFET auxiliary transistor is connected to a circuit input terminal which is coupled by a resistor to the gate of the MOSFET power transistor. The gate of the second MOSFET auxiliary transistor is connected to the drain of the second MOSFET auxiliary transistor as well as to the source of the third MOSFET auxiliary transistor. The drain of the third MOSFET auxiliary transistor is connected to the gate of the MOSFET power transistor, and the bulk electrode of the third MOSFET auxiliary transistor is connected to the source electrode of the MOSFET power transistor.
摘要翻译： PCT No.PCT / DE93 / 01029 Sec。 371日期：1994年7月6日 102（e）日期1994年7月6日PCT 1993年10月28日PCT公布。第WO94 / 11947号公报日期1994年5月26日。一种用于保护MOSFET功率晶体管的电路，该电路具有可变输入阻抗，其中电压的上升速率将增加，因此切换时间减少。为此，第二个MOSFET辅助晶体管通过其体电极连接到MOSFET功率晶体管的源极。第二MOSFET辅助晶体管的源极连接到第三MOSFET辅助晶体管的栅极和MOSFET功率晶体管的栅极。第二MOSFET辅助晶体管的漏极连接到电路输入端，该电路输入端通过电阻耦合到MOSFET功率晶体管的栅极。第二MOSFET辅助晶体管的栅极连接到第二MOSFET辅助晶体管的漏极以及第三MOSFET辅助晶体管的源极。第三MOSFET辅助晶体管的漏极连接到MOSFET功率晶体管的栅极，第三MOSFET辅助晶体管的体电极连接到MOSFET功率晶体管的源极。

7. 发明授权

US07208829B2 Semiconductor component 有权
标题翻译：半导体元件
公开(公告)号：US07208829B2
公开(公告)日：2007-04-24
申请号：US10514171
申请日：2003-02-10
申请人： Henning Hauenstein , Rainer Topp , Jochen Seibold , Dirk Balszunat , Stefan Ernst , Wolfgang Feiler , Thomas Koester , Stefan Hornung , Dieter Streb
发明人： Henning Hauenstein , Rainer Topp , Jochen Seibold , Dirk Balszunat , Stefan Ernst , Wolfgang Feiler , Thomas Koester , Stefan Hornung , Dieter Streb
IPC分类号： H01L29/72
CPC分类号： H01L23/488 , H01L23/3735 , H01L23/482 , H01L25/072 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component that is able to be produced simply, quickly, and yet reliably and that usable for power applications, and including a semiconductor chip, a lower, first main electrode layer formed on a first side of the semiconductor chip, a lower control electrode layer formed on the first side, an insulation layer formed on the first side between the lower first main electrode layer and the lower control electrode layer and which partly covers the lower first main electrode layer, an upper first main electrode layer which is formed on the lower first main electrode layer, an upper control electrode layer which is formed on the lower control electrode layer and the insulation layer and extends on the insulation layer partially above the lower first main electrode layer, and a second main electrode layer formed on a second side of the semiconductor chip.
摘要翻译：一种半导体元件，其能够简单，快速且可靠地制造并且可用于功率应用，并且包括形成在半导体芯片的第一侧上的半导体芯片，下部第一主电极层，下部控制电极形成在第一侧上的第一主电极层，形成在下第一主电极层和下控制电极层之间的第一侧上并部分覆盖下第一主电极层的绝缘层，形成在第一侧上的第一主电极层下部第一主电极层，形成在下部控制电极层和绝缘层上的上部控制电极层，并且在绝缘层上部分地在下部第一主电极层的上方延伸，第二主电极层形成在第二侧上的半导体芯片。

8. 发明授权

US06727555B2 Device for protecting electronic components 失效
标题翻译：电子元件保护装置
公开(公告)号：US06727555B2
公开(公告)日：2004-04-27
申请号：US10199800
申请日：2002-07-19
申请人： Holger Heinisch , Rainer Topp , Wolfgang Jacob , Hans-Reiner Krauss
发明人： Holger Heinisch , Rainer Topp , Wolfgang Jacob , Hans-Reiner Krauss
IPC分类号： H01L2362
CPC分类号： H02H9/041 , H01L2224/48463 , H01L2224/73265 , H01L2924/1305 , H01L2924/13091 , H02H7/067 , H02H9/04 , H01L2924/00
摘要： A device for protecting electronic components against overvoltages of a supply voltage is provided, which device includes at least one semiconductor transistor which is switchable by a trigger circuit when a predetermined overvoltage value is reached, thereby converting electrical energy to thermal energy.
摘要翻译：提供了一种用于保护电子部件以防止电源电压过压的装置，该装置包括至少一个半导体晶体管，当达到预定的过电压值时可由触发电路切换，从而将电能转换为热能。

9. 发明授权

US06320159B1 Window heater 失效
标题翻译：窗户加热器
公开(公告)号：US06320159B1
公开(公告)日：2001-11-20
申请号：US09554821
申请日：2000-07-18
申请人： Rainer Topp
发明人： Rainer Topp
IPC分类号： B60L102
CPC分类号： H05B3/84 , H05B1/0236 , H05B2203/016 , H05B2203/035
摘要： A window heating system, in particular for heating a window of a motor vehicle, includes a resistance heating device, applied onto or integrated into the window, that is connectable to a heating voltage source via terminal contacts by way of an electrical switching device. The switching device is a semiconductor switching device arranged directly on the window to be heated.
摘要翻译：特别是用于加热机动车辆的窗户的窗户加热系统包括施加到窗户上或集成在窗户中的电阻加热装置，其可通过电气开关装置经由端子触点连接到加热电压源。开关装置是直接布置在待加热的窗户上的半导体开关装置。

10. 发明授权

US07199987B2 Diode system having zener diodes and a generator 有权
标题翻译：具有齐纳二极管和发电机的二极管系统
公开(公告)号：US07199987B2
公开(公告)日：2007-04-03
申请号：US10474966
申请日：2002-04-13
申请人： Richard Spitz , Rainer Topp , Alfred Goerlach , Holger Haussmann
发明人： Richard Spitz , Rainer Topp , Alfred Goerlach , Holger Haussmann
IPC分类号： H02H7/00
CPC分类号： H02M7/062
摘要： A diode system and a generator, uses Zener diodes. The diode system has AC voltage terminals and DC voltage terminals, in which the Zener diodes are operable in the forward direction to rectify an AC voltage present at the AC voltage terminals, in which a lower limit is provided for the Zener voltage of the Zener diodes, and in which the lower limit of the Zener voltage is provided so that it is lower than a preset lower DC voltage.
摘要翻译：二极管系统和发生器，使用齐纳二极管。二极管系统具有AC电压端子和DC电压端子，其中齐纳二极管可向正方向操作以整流存在于AC电压端子处的AC电压，其中为齐纳二极管的齐纳电压提供下限，并且其中提供齐纳电压的下限使得其低于预设的较低DC电压。

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