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US5424892A Circuit for protecting a MOSFET power transistor 失效
标题翻译：用于保护MOSFET功率晶体管的电路
公开(公告)号：US5424892A
公开(公告)日：1995-06-13
申请号：US256485
申请日：1994-07-06
申请人： Rainer Topp , Roland Schmid , Dagmar Oertel
发明人： Rainer Topp , Roland Schmid , Dagmar Oertel
IPC分类号： H03K17/08 , H03K17/0412 , H03K17/082 , H03K17/687 , H02H9/02
CPC分类号： H03K17/04123 , H03K17/0822 , H01L2924/0002 , Y10S323/908
摘要： A circuit for protecting a MOSFET power transistor, the circuit having a variable input impedance in which the rate of rise of voltage is to be increased and thus the switching time reduced. For this purpose, a second MOSFET auxiliary transistor is connected by its bulk electrode to the source of the MOSFET power transistor. The source of the second MOSFET auxiliary transistor is connected to the gate of a third MOSFET auxiliary transistor and to the gate of the MOSFET power transistor. The drain of the second MOSFET auxiliary transistor is connected to a circuit input terminal which is coupled by a resistor to the gate of the MOSFET power transistor. The gate of the second MOSFET auxiliary transistor is connected to the drain of the second MOSFET auxiliary transistor as well as to the source of the third MOSFET auxiliary transistor. The drain of the third MOSFET auxiliary transistor is connected to the gate of the MOSFET power transistor, and the bulk electrode of the third MOSFET auxiliary transistor is connected to the source electrode of the MOSFET power transistor.
摘要翻译： PCT No.PCT / DE93 / 01029 Sec。 371日期：1994年7月6日 102（e）日期1994年7月6日PCT 1993年10月28日PCT公布。第WO94 / 11947号公报日期1994年5月26日。一种用于保护MOSFET功率晶体管的电路，该电路具有可变输入阻抗，其中电压的上升速率将增加，因此切换时间减少。为此，第二个MOSFET辅助晶体管通过其体电极连接到MOSFET功率晶体管的源极。第二MOSFET辅助晶体管的源极连接到第三MOSFET辅助晶体管的栅极和MOSFET功率晶体管的栅极。第二MOSFET辅助晶体管的漏极连接到电路输入端，该电路输入端通过电阻耦合到MOSFET功率晶体管的栅极。第二MOSFET辅助晶体管的栅极连接到第二MOSFET辅助晶体管的漏极以及第三MOSFET辅助晶体管的源极。第三MOSFET辅助晶体管的漏极连接到MOSFET功率晶体管的栅极，第三MOSFET辅助晶体管的体电极连接到MOSFET功率晶体管的源极。

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