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1. 发明授权

US08944739B2 Loadport bridge for semiconductor fabrication tools 有权
标题翻译：用于半导体制造工具的承载桥
公开(公告)号：US08944739B2
公开(公告)日：2015-02-03
申请号：US13486024
申请日：2012-06-01
申请人： Shih-Hung Chen , Ying Xiao , Chin-Hsiang Lin
发明人： Shih-Hung Chen , Ying Xiao , Chin-Hsiang Lin
IPC分类号： H01L21/677
CPC分类号： H01L21/6773 , H01L21/67733 , H01L21/67775
摘要： A wafer handling system with apparatus for transporting wafers between semiconductor fabrication tools. In one embodiment, the apparatus is a loadport bridge mechanism including an enclosure having first and second mounting ends, a docking port at each end configured and dimensioned to interface with a loadport of a semiconductor tool, and at least one wafer transport robot operable to transport a wafer between the docking ports. The wafer transport robot hands off or receives a wafer to/from a tool robot at the loadports of a first and second tool. The bridge mechanism allows one or more wafers to be transferred between loadports of different tools on an individual basis without reliance on the FAB's automated material handling system (AMHS) for bulk wafer transport inside a wafer carrier such as a FOUP or others.
摘要翻译：一种具有用于在半导体制造工具之间传输晶片的装置的晶片处理系统。在一个实施例中，该装置是装载端口机构，其包括具有第一和第二安装端的外壳，每个端部处的对接端口被构造和尺寸设计成与半导体工具的承载端口相接合，以及至少一个可运输的晶片传送机械手在对接端口之间的晶片。晶片传送机器人在第一和第二工具的载荷端口移动或接收来自工具机器人的晶片。桥接机构允许一个或多个晶片在不同工具的载荷端口之间单独传输，而不依赖于FAB的自动化材料处理系统（AMHS），用于在诸如FOUP或其它晶片载体之间的体晶片传输。

2. 发明授权

US09368379B2 Systems and methods of controlling semiconductor wafer fabrication processes 有权
标题翻译：控制半导体晶圆制造工艺的系统和方法
公开(公告)号：US09368379B2
公开(公告)日：2016-06-14
申请号：US13419952
申请日：2012-03-14
申请人： Shih-Hung Chen , Ying Xiao , Chin-Hsiang Lin
发明人： Shih-Hung Chen , Ying Xiao , Chin-Hsiang Lin
IPC分类号： G06F15/00 , G01B11/26 , H01L21/67 , H01L21/68 , H01L21/687
CPC分类号： H01L21/67259 , H01L21/681 , H01L21/68764
摘要： A system and method of controlling a semiconductor wafer fabrication process. The method includes positioning a semiconductor wafer on a wafer support assembly in a wafer processing module. A signal is transmitted from a signal emitter positioned at a predetermined transmission angle relative to an axis normal to the wafer support assembly to check leveling of the wafer in the module, so that the signal is reflected from the wafer. The embodiment includes monitoring for the reflected signal at a predetermined reflectance angle relative to the axis normal to the wafer support assembly at a signal receiver. A warning indication is generated if the reflected signal is not received at the signal receiver.
摘要翻译：一种控制半导体晶片制造工艺的系统和方法。该方法包括将半导体晶片定位在晶片处理模块中的晶片支撑组件上。信号从相对于垂直于晶片支撑组件的轴线以预定的传输角定位的信号发射器传输，以检查模块中晶片的调平，使得信号从晶片反射。该实施例包括在信号接收器处相对于垂直于晶片支撑组件的轴以预定的反射角监视反射信号。如果在信号接收器处未接收到反射信号，则会产生警告指示。

3. 发明申请

US20130245978A1 SYSTEMS AND METHODS OF CONTROLLING SEMICONDUCTOR WAFER FABRICATION PROCESSES 有权
标题翻译：控制半导体波形制造工艺的系统和方法
公开(公告)号：US20130245978A1
公开(公告)日：2013-09-19
申请号：US13419952
申请日：2012-03-14
申请人： Shih-Hung CHEN , Ying Xiao , Chin-Hsiang Lin
发明人： Shih-Hung CHEN , Ying Xiao , Chin-Hsiang Lin
IPC分类号： G06F15/00 , G01B11/26
CPC分类号： H01L21/67259 , H01L21/681 , H01L21/68764
摘要： A system and method of controlling a semiconductor wafer fabrication process. The method includes positioning a semiconductor wafer on a wafer support assembly in a wafer processing module. A signal is transmitted from a signal emitter positioned at a predetermined transmission angle relative to an axis normal to the wafer support assembly to check leveling of the wafer in the module, so that the signal is reflected from the wafer. The embodiment includes monitoring for the reflected signal at a predetermined reflectance angle relative to the axis normal to the wafer support assembly at a signal receiver. A warning indication is generated if the reflected signal is not received at the signal receiver.
摘要翻译：一种控制半导体晶片制造工艺的系统和方法。该方法包括将半导体晶片定位在晶片处理模块中的晶片支撑组件上。信号从相对于垂直于晶片支撑组件的轴线以预定的传输角定位的信号发射器传输，以检查模块中晶片的调平，使得信号从晶片反射。该实施例包括在信号接收器处相对于垂直于晶片支撑组件的轴以预定的反射角监视反射信号。如果在信号接收器处未接收到反射信号，则会产生警告指示。

4. 发明授权

US09786471B2 Plasma etcher design with effective no-damage in-situ ash 有权
公开(公告)号：US09786471B2
公开(公告)日：2017-10-10
申请号：US13337418
申请日：2011-12-27
申请人： Ying Xiao , Chin-Hsiang Lin
发明人： Ying Xiao , Chin-Hsiang Lin
IPC分类号： H01J37/32 , G03F7/42 , H01L21/311
CPC分类号： H01J37/321 , G03F7/427 , H01J37/32596 , H01J37/32706 , H01J37/32807 , H01J37/32889 , H01J37/32899 , H01L21/31138
摘要： In some embodiments, the present disclosure relates to a plasma etching system having direct and localized plasma sources in communication with a processing chamber. The direct plasma is operated to provide a direct plasma to the processing chamber for etching a semiconductor workpiece. The direct plasma has a high potential, formed by applying a large bias voltage to the workpiece. After etching is completed the bias voltage and direct plasma source are turned off. The localized plasma source is then operated to provide a low potential, localized plasma to a position within the processing chamber that is spatially separated from the workpiece. The spatial separation results in formation of a diffused plasma having a zero/low potential that is in contact with the workpiece. The zero/low potential of the diffused plasma allows for reactive ashing to be performed, while mitigating workpiece damage resulting from ion bombardment caused by positive plasma potentials.

5. 发明授权

US09887071B2 Multi-zone EPD detectors 有权
公开(公告)号：US09887071B2
公开(公告)日：2018-02-06
申请号：US13328172
申请日：2011-12-16
申请人： Chien-An Chen , Yen-Shuo Su , Ying Xiao , Chin-Hsiang Lin
发明人： Chien-An Chen , Yen-Shuo Su , Ying Xiao , Chin-Hsiang Lin
IPC分类号： H01J37/32 , H01L21/311
CPC分类号： H01J37/32963 , H01J37/3299 , H01L21/31116
摘要： The present disclosure relates to a semiconductor body etching apparatus having a multi-zone end point detection system. In some embodiments, the multi-zone end point detection system has a processing chamber that houses a workpiece that is etched according to an etching process. A plurality of end point detector (EPD) probes are located within the processing chamber. Respective EPD probes are located within different zones in the processing chamber, thereby enabling the detection of end point signals from multiple zones within the processing chamber. The detected end point signals are provided from the plurality of EPD probes to an advanced process control (APC) unit. The APC unit is configured to make a tuning knob adjustment to etching process parameters based upon the detected end point signals and to thereby account for etching non-uniformities.

6. 发明申请

US20130157387A1 Multi-zone EPD Detectors 有权
标题翻译：多区域EPD探测器
公开(公告)号：US20130157387A1
公开(公告)日：2013-06-20
申请号：US13328172
申请日：2011-12-16
申请人： Chien-An Chen , Yen-Shuo Su , Ying Xiao , Chin-Hsiang Lin
发明人： Chien-An Chen , Yen-Shuo Su , Ying Xiao , Chin-Hsiang Lin
IPC分类号： H01L21/66 , H01L21/306
CPC分类号： H01J37/32963 , H01J37/3299 , H01L21/31116
摘要： The present disclosure relates to a semiconductor body etching apparatus having a multi-zone end point detection system. In some embodiments, the multi-zone end point detection system has a processing chamber that houses a workpiece that is etched according to an etching process. A plurality of end point detector (EPD) probes are located within the processing chamber. Respective EPD probes are located within different zones in the processing chamber, thereby enabling the detection of end point signals from multiple zones within the processing chamber. The detected end point signals are provided from the plurality of EPD probes to an advanced process control (APC) unit. The APC unit is configured to make a tuning knob adjustment to etching process parameters based upon the detected end point signals and to thereby account for etching non-uniformities.
摘要翻译：本公开涉及具有多区域端点检测系统的半导体本体蚀刻装置。在一些实施例中，多区域终点检测系统具有容纳根据蚀刻工艺被蚀刻的工件的处理室。多个端点检测器（EPD）探针位于处理室内。相应的EPD探针位于处理室中的不同区域内，从而能够检测来自处理室内的多个区域的终点信号。检测到的终点信号从多个EPD探针提供给高级处理控制（APC）单元。 APC单元被配置为基于检测到的终点信号对调谐旋钮进行蚀刻工艺参数调整，从而考虑蚀刻非均匀性。

7. 发明授权

US08920888B2 Plasma process, film deposition method and system using rotary chuck 有权
标题翻译：等离子工艺，成膜方法和使用旋转卡盘的系统
公开(公告)号：US08920888B2
公开(公告)日：2014-12-30
申请号：US13439609
申请日：2012-04-04
申请人： Yu-Lung Yang , Ying Xiao , Chin-Hsiang Lin
发明人： Yu-Lung Yang , Ying Xiao , Chin-Hsiang Lin
IPC分类号： H05H1/24 , C23C16/00 , C23C16/52
CPC分类号： C23C16/45523 , C23C16/4584 , C23C16/46 , C23C16/50 , C23C16/52 , H01J37/32082 , H01J37/32733 , H01J37/3299
摘要： A chuck and a wafer supported thereon are rotated during a plasma process or a film deposition process to reduce thickness non-uniformity of a film processed or deposited on the wafer.
摘要翻译：在等离子体处理或薄膜沉积工艺期间，支撑在其上的卡盘和晶片旋转以减小加工或沉积在晶片上的膜的厚度不均匀性。

8. 发明授权

US09840778B2 Plasma chamber having an upper electrode having controllable valves and a method of using the same 有权
公开(公告)号：US09840778B2
公开(公告)日：2017-12-12
申请号：US13486374
申请日：2012-06-01
申请人： Yen-Shuo Su , Ying Xiao , Chin-Hsiang Lin
发明人： Yen-Shuo Su , Ying Xiao , Chin-Hsiang Lin
IPC分类号： C23C16/50 , C23C16/455 , H01J37/32 , C23C16/52
CPC分类号： C23C16/50 , C23C16/45561 , C23C16/45563 , C23C16/45565 , C23C16/52 , H01J37/3244 , H01J37/32449 , H01J37/32532 , H01J37/32899
摘要： This description relates to a plasma treatment apparatus including a vapor chamber, a gas supply and an upper electrode assembly. The upper electrode assembly includes a gas distribution plate having a plurality of holes in a bottom surface thereof and an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle. The plasma treatment apparatus further includes a controller configured to generate a control signal. The at least one controllable valve is configured to be adjusted based on the control signal. A control system and a method of controlling a controllable valve are also described.

9. 发明申请

US20130160795A1 Plasma Etcher Design with Effective No-Damage In-Situ Ash 有权
标题翻译：等离子体蚀刻设计，有效无损原位灰
公开(公告)号：US20130160795A1
公开(公告)日：2013-06-27
申请号：US13337418
申请日：2011-12-27
申请人： Ying Xiao , Chin-Hsiang Lin
发明人： Ying Xiao , Chin-Hsiang Lin
IPC分类号： H01L21/3065 , B08B6/00
CPC分类号： H01J37/321 , G03F7/427 , H01J37/32596 , H01J37/32706 , H01J37/32807 , H01J37/32889 , H01J37/32899 , H01L21/31138
摘要： In some embodiments, the present disclosure relates to a plasma etching system having direct and localized plasma sources in communication with a processing chamber. The direct plasma is operated to provide a direct plasma to the processing chamber for etching a semiconductor workpiece. The direct plasma has a high potential, formed by applying a large bias voltage to the workpiece. After etching is completed the bias voltage and direct plasma source are turned off. The localized plasma source is then operated to provide a low potential, localized plasma to a position within the processing chamber that is spatially separated from the workpiece. The spatial separation results in formation of a diffused plasma having a zero/low potential that is in contact with the workpiece. The zero/low potential of the diffused plasma allows for reactive ashing to be performed, while mitigating workpiece damage resulting from ion bombardment caused by positive plasma potentials.
摘要翻译：在一些实施例中，本公开涉及具有与处理室连通的直接和局部等离子体源的等离子体蚀刻系统。操作直接等离子体以向处理室提供直接等离子体以蚀刻半导体工件。直接等离子体具有高电位，通过向工件施加大的偏置电压而形成。蚀刻完成后，偏置电压和直接等离子体源关闭。然后操作局部等离子体源以将低电位局部等离子体提供到处理室内与工件空间分离的位置。空间分离导致形成具有与工件接触的零/低电位的扩散等离子体。扩散等离子体的零/低电位允许执行反应性灰化，同时减轻由正等离子体电位引起的离子轰击造成的工件损伤。

10. 发明授权

US10047439B2 Method and system for tool condition monitoring based on a simulated inline measurement 有权
公开(公告)号：US10047439B2
公开(公告)日：2018-08-14
申请号：US13314850
申请日：2011-12-08
申请人： Po-Feng Tsai , Chia-Tong Ho , Sunny Wu , Jo Fei Wang , Jong-I Mou , Chin-Hsiang Lin
发明人： Po-Feng Tsai , Chia-Tong Ho , Sunny Wu , Jo Fei Wang , Jong-I Mou , Chin-Hsiang Lin
IPC分类号： G06F19/00 , C23C16/52 , H01L21/66
摘要： A method and system for removing control action effects from inline measurement data for tool condition monitoring is disclosed. An exemplary method includes determining a control action effect that contributes to an inline measurement, wherein the inline measurement indicates a wafer characteristic of a wafer processed by a process tool; and evaluating the inline measurement without the control action effect contribution to determine a condition of the process tool.

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