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1. 发明申请

US20120181504A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120181504A1
公开(公告)日：2012-07-19
申请号：US13352804
申请日：2012-01-18
申请人： Shigeyuki Takagi , Hidehiko Yabuhara
发明人： Shigeyuki Takagi , Hidehiko Yabuhara
IPC分类号： H01L33/04 , H01L33/30
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2022 , H01S5/22 , H01S5/2206 , H01S5/222 , H01S5/2275 , H01S5/3213 , H01S5/3218 , H01S5/3402
摘要： According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 μm or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.
摘要翻译：根据实施例，半导体发光器件被配置为通过在多个量子阱的子带之间的电子的能量弛豫来发光。该器件包括有源层和至少一对覆层。有源层设置成在与光的发射方向平行的方向上延伸的条纹形状，并且包括多个量子阱; 有源层发射波长为10μm以上的光。每个包层分别设置在有源层上和下方，并且具有比有源层更低的折射率。包覆层的至少一部分包含与有源层具有不同晶格常数的材料，并且在比其他部分的光的波长处具有较低的光吸收。

2. 发明授权

US08759812B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08759812B2
公开(公告)日：2014-06-24
申请号：US13352804
申请日：2012-01-18
申请人： Shigeyuki Takagi , Hidehiko Yabuhara
发明人： Shigeyuki Takagi , Hidehiko Yabuhara
IPC分类号： H01L31/00 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/32 , H01S5/34
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2022 , H01S5/22 , H01S5/2206 , H01S5/222 , H01S5/2275 , H01S5/3213 , H01S5/3218 , H01S5/3402
摘要： According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 μm or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.
摘要翻译：根据实施例，半导体发光器件被配置为通过在多个量子阱的子带之间的电子的能量弛豫来发光。该器件包括有源层和至少一对覆层。有源层设置成在与光的发射方向平行的方向上延伸的条纹形状，并且包括多个量子阱; 有源层发射波长为10μm以上的光。每个包层分别设置在有源层上和下方，并且具有比有源层更低的折射率。包覆层的至少一部分包含与有源层具有不同晶格常数的材料，并且在比其他部分的光的波长处具有较低的光吸收。

3. 发明申请

US20130195136A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20130195136A1
公开(公告)日：2013-08-01
申请号：US13565008
申请日：2012-08-02
申请人： Shigeyuki Takagi , Hidehiko Yabuhara , Akira Maekawa , Takayoshi Fujii , Yasutomo Shiomi
发明人： Shigeyuki Takagi , Hidehiko Yabuhara , Akira Maekawa , Takayoshi Fujii , Yasutomo Shiomi
IPC分类号： H01S5/20
CPC分类号： H01S5/3402 , B82Y20/00 , H01S1/00 , H01S5/12 , H01S5/2022 , H01S5/2031 , H01S5/2054 , H01S5/22 , H01S5/2219 , H01S5/3211 , H01S5/3425 , H01S5/34333 , H01S2301/166 , H01S2301/176
摘要： A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.
摘要翻译：半导体激光器包括：具有包括量子阱层的有源层的层叠体，所述有源层具有级联结构，所述级联结构包括能够发射波长不小于12μm且不大于18μm的红外激光的第一区域通过量子阱层的子带间光学跃迁和能够缓和交替堆叠的载流子的能量的第二区域，该层叠体具有脊波导并能够发射红外激光; 以及电介质层，其被设置为夹着所述层叠体的至少一部分侧面的两侧，所述电介质层的透射率降低至50％的波长为16μm以上，所述电介质层具有折射率低于构成活性层的所有层的折射率。

4. 发明授权

US09407065B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US09407065B2
公开(公告)日：2016-08-02
申请号：US13565008
申请日：2012-08-02
申请人： Shigeyuki Takagi , Hidehiko Yabuhara , Akira Maekawa , Takayoshi Fujii , Yasutomo Shiomi
发明人： Shigeyuki Takagi , Hidehiko Yabuhara , Akira Maekawa , Takayoshi Fujii , Yasutomo Shiomi
IPC分类号： H01S5/34 , H01S5/20 , H01S5/22 , B82Y20/00 , H01S5/12 , H01S5/32
CPC分类号： H01S5/3402 , B82Y20/00 , H01S1/00 , H01S5/12 , H01S5/2022 , H01S5/2031 , H01S5/2054 , H01S5/22 , H01S5/2219 , H01S5/3211 , H01S5/3425 , H01S5/34333 , H01S2301/166 , H01S2301/176
摘要： A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.
摘要翻译：半导体激光器包括：具有包括量子阱层的有源层的层叠体，所述有源层具有级联结构，所述级联结构包括能够发射波长不小于12μm且不大于18μm的红外激光的第一区域通过量子阱层的子带间光学跃迁和能够缓和交替堆叠的载流子的能量的第二区域，该层叠体具有脊波导并能够发射红外激光; 以及电介质层，其被设置为夹着所述层叠体的至少一部分侧面的两侧，所述电介质层的透射率降低至50％的波长为16μm以上，所述电介质层具有折射率低于构成活性层的所有层的折射率。

5. 发明申请

US20080244481A1 METHOD FOR DESIGNING AND MANUFACTURING SEMICONDUCTOR DEVICE AND SOFTWARE THEREFOR 审中-公开
标题翻译：用于设计和制造半导体器件及其软件的方法
公开(公告)号：US20080244481A1
公开(公告)日：2008-10-02
申请号：US11859162
申请日：2007-09-21
申请人： Shigeru Kinoshita , Shigeyuki Takagi , Hidehiko Yabuhara
发明人： Shigeru Kinoshita , Shigeyuki Takagi , Hidehiko Yabuhara
IPC分类号： G06F17/50
CPC分类号： G06F17/5036 , G06F17/5045
摘要： A method for designing a semiconductor device including a semiconductor substrate and an interconnect on the semiconductor substrate, with X-direction being one direction parallel to the semiconductor substrate, Y-direction being a direction parallel to the semiconductor substrate and perpendicular to the X-direction, and Z-direction being perpendicular to the semiconductor substrate, the method includes: determining a cross-sectional configuration in the X-Z direction; three-dimensionalizing the cross-sectional configuration with a range in the Y-direction being specified; and using the three-dimensionalized configuration as a model.
摘要翻译：一种用于设计包括半导体衬底和半导体衬底上的互连的半导体器件的方法，其中X方向是与半导体衬底平行的一个方向，Y方向是与半导体衬底平行的方向并垂直于X方向并且Z方向垂直于所述半导体衬底，所述方法包括：确定XZ方向上的横截面构造; 在规定Y方向的范围内对截面结构进行三维化; 并使用三维化配置作为模型。

6. 发明授权

US09142774B2 Nonvolatile memory device and method for manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US09142774B2
公开(公告)日：2015-09-22
申请号：US13715180
申请日：2012-12-14
申请人： Hidehiko Yabuhara , Takashi Hirotani , Junji Kataoka , Hisashi Kameoka
发明人： Hidehiko Yabuhara , Takashi Hirotani , Junji Kataoka , Hisashi Kameoka
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/148 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device includes a first electrode, a second electrode, and a memory cell provided between the first electrode and the second electrode. The memory cell includes a retention unit, a resistance change unit, and an ion supply unit. The retention unit is provided on the first electrode and has an electron trap. The resistance change unit is provided on the retention unit. The ion supply unit is provided between the resistance change unit and the second electrode and includes a metal element.
摘要翻译：根据一个实施例，非易失性存储器件包括第一电极，第二电极和设置在第一电极和第二电极之间的存储单元。存储单元包括保持单元，电阻变化单元和离子供应单元。保持单元设置在第一电极上并具有电子阱。电阻改变单元设置在保持单元上。离子供给单元设置在电阻改变单元和第二电极之间，并且包括金属元件。

7. 发明申请

US20080073699A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20080073699A1
公开(公告)日：2008-03-27
申请号：US11689157
申请日：2007-03-21
申请人： Kazuhito Nishitani , Hidehiko Yabuhara
发明人： Kazuhito Nishitani , Hidehiko Yabuhara
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/40114
摘要： A method for manufacturing a semiconductor device includes: forming a first film on a base body; crystallizing the first film by heating; thinning the crystallized first film; and forming a second film on the thinned first film. The first film is made of a material having a high dielectric constant than silicon oxide. A semiconductor device includes: a silicon substrate; a tunnel insulating film provided on the silicon substrate; a floating gate electrode provided on the tunnel insulating film; a polycrystalline insulating film provided on the floating gate electrode; and a control gate electrode provided on the polycrystalline insulating film. The polycrystalline insulating film has a high dielectric constant than silicon oxide, and the polycrystalline insulating film is made of crystal grains which are substantially monocrystalline in a film thickness direction
摘要翻译：一种制造半导体器件的方法包括：在基体上形成第一膜; 通过加热使第一膜结晶; 使结晶的第一层薄膜变薄; 以及在所述薄化的第一膜上形成第二膜。第一膜由具有高氧化硅介电常数的材料制成。半导体器件包括：硅衬底; 设置在硅基板上的隧道绝缘膜; 设置在隧道绝缘膜上的浮栅电极; 设置在浮栅电极上的多晶绝缘膜; 以及设置在多晶绝缘膜上的控制栅电极。多晶绝缘膜的介电常数高于氧化硅，多晶绝缘膜由膜厚方向上基本上单晶的晶粒构成

8. 发明授权

US08338820B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08338820B2
公开(公告)日：2012-12-25
申请号：US13207824
申请日：2011-08-11
申请人： Takuo Kikuchi , Hidehiko Yabuhara
发明人： Takuo Kikuchi , Hidehiko Yabuhara
IPC分类号： H01L29/06
CPC分类号： H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer. The first conductivity type layer has a superlattice structure. First semiconductor layers and second semiconductor layers are alternately provided in the superlattice structure. The first semiconductor layers include a first nitride semiconductor and the second semiconductor layers include a second nitride semiconductor having a larger lattice constant than the first nitride semiconductor. The light emitting layer has a multi-quantum well structure. Quantum well layers and barrier layers are alternately provided in the multi-quantum well structure. The quantum well layers include a third nitride semiconductor having a smaller lattice constant than the second nitride semiconductor and the barrier layers include a fourth nitride semiconductor having a smaller lattice constant than the third nitride semiconductor. At least one of the quantum well layers has lattice spacing equal to the lattice constant of the third nitride semiconductor.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型半导体层，发光层和第二导电类型半导体层。第一导电类型层具有超晶格结构。第一半导体层和第二半导体层交替地设置在超晶格结构中。第一半导体层包括第一氮化物半导体，第二半导体层包括具有比第一氮化物半导体更大的晶格常数的第二氮化物半导体。发光层具有多量子阱结构。在多量子阱结构中交替提供量子阱层和势垒层。量子阱层包括具有比第二氮化物半导体更小的晶格常数的第三氮化物半导体，并且阻挡层包括具有比第三氮化物半导体更小的晶格常数的第四氮化物半导体。至少一个量子阱层具有等于第三氮化物半导体的晶格常数的晶格间距。

9. 发明申请

US20120211724A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120211724A1
公开(公告)日：2012-08-23
申请号：US13353762
申请日：2012-01-19
申请人： Takuo KIKUCHI , Hidehiko Yabuhara
发明人： Takuo KIKUCHI , Hidehiko Yabuhara
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L33/025 , H01L33/325
摘要： According to an embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer provided between the n-type semiconductor layer and the p-type semiconductor layer. The light emitting layer includes at least one quantum well, and the quantum well adjacent to the p-type semiconductor layer includes a first barrier layer and a second barrier layer, the first barrier layer nearer to the p-type semiconductor layer being doped with p-type impurity.
摘要翻译：根据实施例，半导体发光器件包括n型半导体层，p型半导体层和设置在n型半导体层和p型半导体层之间的发光层。发光层包括至少一个量子阱，并且与p型半导体层相邻的量子阱包括第一势垒层和第二阻挡层，更靠近p型半导体层的第一势垒层掺杂有p 型杂质。

10. 发明申请

US20130153850A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20130153850A1
公开(公告)日：2013-06-20
申请号：US13715180
申请日：2012-12-14
申请人： Hidehiko Yabuhara , Takashi Hirotani , Junji Kataoka , Hisashi Kameoka
发明人： Hidehiko Yabuhara , Takashi Hirotani , Junji Kataoka , Hisashi Kameoka
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/148 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device includes a first electrode, a second electrode, and a memory cell provided between the first electrode and the second electrode. The memory cell includes a retention unit, a resistance change unit, and an ion supply unit. The retention unit is provided on the first electrode and has an electron trap. The resistance change unit is provided on the retention unit. The ion supply unit is provided between the resistance change unit and the second electrode and includes a metal element.
摘要翻译：根据一个实施例，非易失性存储器件包括第一电极，第二电极和设置在第一电极和第二电极之间的存储单元。存储单元包括保持单元，电阻变化单元和离子供应单元。保持单元设置在第一电极上并具有电子阱。电阻改变单元设置在保持单元上。离子供给单元设置在电阻改变单元和第二电极之间，并且包括金属元件。

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