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    • 1. 发明授权
    • Semiconductor light emitting device
    • 半导体发光器件
    • US08338820B2
    • 2012-12-25
    • US13207824
    • 2011-08-11
    • Takuo KikuchiHidehiko Yabuhara
    • Takuo KikuchiHidehiko Yabuhara
    • H01L29/06
    • H01L33/04H01L33/06H01L33/12H01L33/32
    • According to one embodiment, a semiconductor light emitting device includes a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer. The first conductivity type layer has a superlattice structure. First semiconductor layers and second semiconductor layers are alternately provided in the superlattice structure. The first semiconductor layers include a first nitride semiconductor and the second semiconductor layers include a second nitride semiconductor having a larger lattice constant than the first nitride semiconductor. The light emitting layer has a multi-quantum well structure. Quantum well layers and barrier layers are alternately provided in the multi-quantum well structure. The quantum well layers include a third nitride semiconductor having a smaller lattice constant than the second nitride semiconductor and the barrier layers include a fourth nitride semiconductor having a smaller lattice constant than the third nitride semiconductor. At least one of the quantum well layers has lattice spacing equal to the lattice constant of the third nitride semiconductor.
    • 根据一个实施例,半导体发光器件包括第一导电类型半导体层,发光层和第二导电类型半导体层。 第一导电类型层具有超晶格结构。 第一半导体层和第二半导体层交替地设置在超晶格结构中。 第一半导体层包括第一氮化物半导体,第二半导体层包括具有比第一氮化物半导体更大的晶格常数的第二氮化物半导体。 发光层具有多量子阱结构。 在多量子阱结构中交替提供量子阱层和势垒层。 量子阱层包括具有比第二氮化物半导体更小的晶格常数的第三氮化物半导体,并且阻挡层包括具有比第三氮化物半导体更小的晶格常数的第四氮化物半导体。 至少一个量子阱层具有等于第三氮化物半导体的晶格常数的晶格间距。