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1. 发明授权

US09048362B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09048362B2
公开(公告)日：2015-06-02
申请号：US13405565
申请日：2012-02-27
申请人： Shigeya Kimura , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
发明人： Shigeya Kimura , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/06 , H01L33/32 , B82Y20/00 , H01S5/343 , H01S5/34
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/12 , H01L33/32 , H01S5/3408 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.
摘要翻译：根据一个实施例，半导体发光器件包括含有氮化物半导体和发光层的n型和p型半导体层。发光层包括含有III族元素的阻挡层，以及与阻挡层堆叠并含有III族元素的阱层。阻挡层被分为n型半导体层侧的第一部分和p型半导体层侧的第二部分，第二部分的III族元素中的In组成比低于第一部分一部分。阱层被分为n型半导体层侧的第三部分和p型半导体层侧的第四部分，第四部分的III族元素中的In组成比高于第三部分的第三部分一部分。

2. 发明申请

US20130087761A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
公开(公告)号：US20130087761A1
公开(公告)日：2013-04-11
申请号：US13405565
申请日：2012-02-27
申请人： Shigeya KIMURA , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
发明人： Shigeya KIMURA , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/12 , H01L33/32 , H01S5/3408 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containingIII group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.

3. 发明授权

US08525195B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08525195B2
公开(公告)日：2013-09-03
申请号：US12873662
申请日：2010-09-01
申请人： Hajime Nago , Koichi Tachibana , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
发明人： Hajime Nago , Koichi Tachibana , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
IPC分类号： H01L33/02
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/04 , H01L33/32 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, a light emitting portion, a multilayered structural body, and an n-side intermediate layer. The light emitting portion is provided between the semiconductor layers. The light emitting portion includes barrier layers containing GaN, and a well layer provided between the barrier layers. The well layer contains Inx1Ga1-x1N. The body is provided between the n-type semiconductor layer and the light emitting portion. The body includes: first layers containing GaN, and a second layer provided between the first layers. The second layer contains Inx2Ga1-x2N. Second In composition ratio x2 is not less than 0.6 times of first In composition ratio x1 and is lower than the first In composition x1. The intermediate layer is provided between the body and the light emitting portion and includes a third layer containing Aly1Ga1-y1N (0
摘要翻译：根据一个实施例，半导体发光器件包括n型和p型半导体层，发光部分，多层结构体和n侧中间层。发光部分设置在半导体层之间。发光部分包括含有GaN的阻挡层，以及设置在阻挡层之间的阱层。阱层包含Inx1Ga1-x1N。本体设置在n型半导体层和发光部之间。主体包括：包含GaN的第一层，以及设置在第一层之间的第二层。第二层包含Inx2Ga1-x2N。第二组成比x2不小于第一In组成比x1的0.6倍，并且低于第一In组成x1。中间层设置在主体和发光部分之间，并且包括含有Aly1Ga1-y1N（0

4. 发明申请

US20120286284A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER 有权
标题翻译：半导体发光器件和散热器
公开(公告)号：US20120286284A1
公开(公告)日：2012-11-15
申请号：US13206700
申请日：2011-08-10
申请人： Koichi TACHIBANA , Shigeya Kimura , Hajime Nago , Shinya Nunoue
发明人： Koichi TACHIBANA , Shigeya Kimura , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/32 , H01S5/3407 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： According to one embodiment, a semiconductor light emitting device includes: a foundation layer, a first semiconductor layer, a light emitting part, and a second semiconductor layer. The foundation layer includes a nitride semiconductor. The foundation layer has a dislocation density not more than 5×108 cm−2. The first semiconductor layer of a first conductivity type is provided on the foundation layer and includes a nitride semiconductor. The light emitting part is provided on the first semiconductor layer. The light emitting part includes: a plurality of barrier layers; and a well layer provided between the barrier layers. The well layer has a bandgap energy smaller than a bandgap energy of the barrier layers and has a thickness larger than a thickness of the barrier layers. The second semiconductor layer of a second conductivity type different from the first conductivity type, is provided on the light emitting part and includes a nitride semiconductor.
摘要翻译：根据一个实施例，半导体发光器件包括：基底层，第一半导体层，发光部分和第二半导体层。基础层包括氮化物半导体。基础层的位错密度不大于5×108cm-2。第一导电类型的第一半导体层设置在基底层上并且包括氮化物半导体。发光部分设置在第一半导体层上。发光部包括：多个阻挡层; 以及设置在阻挡层之间的阱层。阱层具有小于阻挡层的带隙能量的带隙能量，并且具有比阻挡层的厚度大的厚度。具有不同于第一导电类型的第二导电类型的第二半导体层设置在发光部分上并且包括氮化物半导体。

5. 发明授权

US08895956B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08895956B2
公开(公告)日：2014-11-25
申请号：US13218827
申请日：2011-08-26
申请人： Shigeya Kimura , Koichi Tachibana , Hajime Nago , Shinya Nunoue
发明人： Shigeya Kimura , Koichi Tachibana , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/04 , H01L33/32 , H01L33/06
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type first semiconductor layer, a p-type second semiconductor layer and a light emitting layer. The light emitting layer is provided between the first and second semiconductor layers, and includes a plurality of barrier layers including a nitride semiconductor and a well layer provided between the barrier layers and including a nitride semiconductor containing In. The barrier layers and the well layer are stacked in a first direction from the second semiconductor layer toward the first semiconductor layer. The well layer has a p-side interface part and an n-side interface part. Each of the p-side and the n-side interface part include an interface with one of the barrier layers. A variation in a concentration of In in a surface perpendicular to the first direction of the p-side interface part is not more than that of the n-side interface part.
摘要翻译：根据一个实施例，半导体发光器件包括n型第一半导体层，p型第二半导体层和发光层。发光层设置在第一和第二半导体层之间，并且包括多个阻挡层，包括氮化物半导体和设置在阻挡层之间的阱层，并且包括含有In的氮化物半导体。阻挡层和阱层从第二半导体层向第一半导体层沿第一方向堆叠。阱层具有p侧接口部和n侧接口部。 p侧和n侧接口部分中的每一个包括与阻挡层中的一个的界面。在垂直于p侧接口部分的第一方向的表面中的In浓度的变化不大于n侧接口部分的浓度变化。

6. 发明授权

US08674338B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08674338B2
公开(公告)日：2014-03-18
申请号：US12871285
申请日：2010-08-30
申请人： Koichi Tachibana , Toshiki Hikosaka , Shigeya Kimura , Hajime Nago , Shinya Nunoue
发明人： Koichi Tachibana , Toshiki Hikosaka , Shigeya Kimura , Hajime Nago , Shinya Nunoue
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L33/06 , H01L33/32 , H01L33/325
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains InwnGa1-wnN and has a layer thickness twn. An n-side end barrier layer which is closest to the n-type semiconductor layer contains InbnGa1-bnN and has a layer thickness tbn. A p-side end well layer which is closest to the p-type semiconductor layer contains InwpGa1-wpN and has a layer thickness twp. A p-side end barrier layer which is closest to the p-type semiconductor contains InbpGa1-bpN and has a layer thickness tbp. A value of (wp×twp+bp×tbp)/(twp+tbp) is higher than (wn×twn+bn×tbn)/(twn+tbn) and is not higher than 5 times (wn×twn+bn×tbn)/(twn+tbn).
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。发光部分设置在半导体层之间，并且包括交替堆叠的势垒层和阱层。最靠近n型半导体层的n侧端阱层包含InwnGa1-wnN并具有层厚度twn。最靠近n型半导体层的n侧端势垒层包含InbnGa1-bnN并具有层厚度tbn。最靠近p型半导体层的p侧端阱层包含InwpGa1-wpN，并具有层厚度twp。最靠近p型半导体的p侧端势垒层包含InbpGa1-bpN，并具有层厚度tbp。（wp×twp + bp×tbp）/（twp + tbp）的值高于（wn×twn + bn×tbn）/（twn + tbn），并且不高于5次（wn×twn + bn× tbn）/（twn + tbn）。

7. 发明申请

US20110215351A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110215351A1
公开(公告)日：2011-09-08
申请号：US12875822
申请日：2010-09-03
申请人： Shigeya Kimura , Hajime Nago , Toshiyuki Oka , Koichi Tachibana , Toshiki Hikosaka , Shinya Nunoue
发明人： Shigeya Kimura , Hajime Nago , Toshiyuki Oka , Koichi Tachibana , Toshiki Hikosaka , Shinya Nunoue
IPC分类号： H01L33/32 , H01L33/30
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01S5/3216 , H01S5/34333
摘要： According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness tb of the barrier layer is 10 nanometers or less.
摘要翻译：根据一个实施例，半导体发光器件包括包括氮化物半导体的n型半导体层，包括氮化物半导体的p型半导体层，发光部分和层叠体。发光部分设置在n型和p型半导体层之间，并且包括阻挡层和阱层。阱层与阻挡层堆叠。所述层叠体设置在所述发光部和所述n型半导体层之间，并且包括第一层和第二层。第二层与第一层堆叠。平均层叠体的组成比高于发光部的平均In组成比的0.4倍。阻挡层的层厚度tb为10纳米以下。

8. 发明授权

US08525203B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08525203B2
公开(公告)日：2013-09-03
申请号：US12874510
申请日：2010-09-02
申请人： Koichi Tachibana , Hajime Nago , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
发明人： Koichi Tachibana , Hajime Nago , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes AlX1Ga1-x1N having first Al composition ratio x1. The second layer is provided between the first layer and the p-type semiconductor layer and includes Alx2Ga1-x2N having second Al composition ratio x2 higher than the first Al composition ratio x1. The intermediate layer is provided between the first layer and the light emitting portion and has a thickness not smaller than 3 nanometers and not larger than 8 nanometers and includes Inz1Ga1-z1N (0≦z1
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，发光部分，第一层，第二层和中间层。半导体层包括氮化物半导体。发光部分设置在n型半导体层和p型半导体层之间，并且包括量子阱层。第一层设置在发光部和p型半导体层之间，并且包括具有第一Al组成比x1的AlX1Ga1-x1N。第二层设置在第一层和p型半导体层之间，并且包括具有比第一Al组成比x1高的第二Al组成比x2的Al x2 Ga1-x2N。中间层设置在第一层和发光部之间，并且具有不小于3纳米且不大于8纳米的厚度，并且包括Inz1Ga1-z1N（0 @ z1 <1）。

9. 发明申请

US20120286237A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER 审中-公开
标题翻译：半导体发光器件和散热器
公开(公告)号：US20120286237A1
公开(公告)日：2012-11-15
申请号：US13222185
申请日：2011-08-31
申请人： Hajime Nago , Koichi Tachibana , Shigeya Kimura , Takahiro Sato , Taisuke Sato , Toshihide Ito , Shinya Nunoue
发明人： Hajime Nago , Koichi Tachibana , Shigeya Kimura , Takahiro Sato , Taisuke Sato , Toshihide Ito , Shinya Nunoue
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/325 , H01S5/34333 , H01S2304/04
摘要： According to one embodiment, a semiconductor light emitting device includes: an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer. The light emitting part includes: a plurality of well layers including Inx1Ga1-x1N (0
摘要翻译：根据一个实施例，半导体发光器件包括：n型半导体层，p型半导体层和发光部分。发光部分设置在n型半导体层和p型半导体层之间。发光部分包括：包括In x Ga 1-x1 N（0

10. 发明申请

US20120049157A1 NITRIDE SEMICONDUCTOR LIGHT EMMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体光照射装置及其制造方法
公开(公告)号：US20120049157A1
公开(公告)日：2012-03-01
申请号：US13221456
申请日：2011-08-30
申请人： Hajime NAGO , Koichi Tachibana , Toshiyuki Oka , Shigeya Kimura , Shinya Nunoue
发明人： Hajime NAGO , Koichi Tachibana , Toshiyuki Oka , Shigeya Kimura , Shinya Nunoue
IPC分类号： H01L33/06 , H01L33/30
CPC分类号： H01L33/32 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01L33/025 , H01L33/06
摘要： According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and includes an In-containing nitride semiconductor. A GaN layer is formed on the active layer. A first AlGaN layer is formed on the GaN layer, and has a first Al composition ratio. A p-type second AlGaN layer is formed on the first AlGaN layer, has a second Al composition ratio higher than the first Al composition ratio, and contains a larger amount of Mg than the GaN layer and the first AlGaN layer. A second clad layer is formed on the second AlGaN layer, and includes a p-type nitride semiconductor.
摘要翻译：根据一个实施例，在氮化物半导体发光器件中，第一覆盖层包括n型氮化物半导体。在第一包层上形成有源层，并且包括含In氮化物半导体。在有源层上形成GaN层。第一AlGaN层形成在GaN层上，并具有第一Al组成比。在第一AlGaN层上形成p型第二AlGaN层，具有高于第一Al组分比的第二Al组分比，并且含有比GaN层和第一AlGaN层更大量的Mg。第二覆盖层形成在第二AlGaN层上，并且包括p型氮化物半导体。

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