会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 8. 发明授权
    • Gate driver for MOS control semiconductor devices
    • 用于MOS控制半导体器件的栅极驱动器
    • US06703874B2
    • 2004-03-09
    • US10436265
    • 2003-05-13
    • Shuji KatohShigeta UedaHiromitsu SakaiTakashi IkimiTomomichi Ito
    • Shuji KatohShigeta UedaHiromitsu SakaiTakashi IkimiTomomichi Ito
    • H03K300
    • H02M1/32H03K17/0828H03K17/107
    • A gate driver is provided for controlling a gate voltage of each of a plurality of MOS control semiconductor devices, such as IGBTs or metal oxide MOS transistors, of a semiconductor power converter in which said MOS control semiconductors are connected in series with each other, the gate driver includes a power supply line having a higher potential than a gate potential on each of said MOS control semiconductor devices when in steady ON state, and an arrangement for supplying a current from the power source line to the gate of each of said MOS control semiconductors to increase the gate voltage of the MOS control semiconductor devices when a potential difference between said power supply line and an emitter of each of said MOS control semiconductors is constant and when a collector voltage of the MOS control semiconductor device exceeds a predetermined value under ON state of the MOS control semiconductor device.
    • 提供一种栅极驱动器,用于控制半导体功率转换器中的多个MOS控制半导体器件(例如IGBT或金属氧化物MOS晶体管)中的每一个的栅极电压,其中所述MOS控制半导体彼此串联连接, 栅极驱动器包括在稳定导通状态时具有比每个所述MOS控制半导体器件上的栅极电位高的电位的电源线,以及用于将电流从电源线提供给每个所述MOS控制的栅极的装置 半导体,当所述电源线和所述MOS控制半导体的每一个的发射极之间的电位差恒定时,以及当所述MOS控制半导体器件的集电极电压在ON时超过预定值时,增加所述MOS控制半导体器件的栅极电压 MOS控制半导体器件的状态。
    • 10. 发明授权
    • Semiconductor power converting apparatus
    • 半导体电力转换装置
    • US06809561B2
    • 2004-10-26
    • US10638400
    • 2003-08-12
    • Shuji KatohShigeta UedaHiromitsu SakaiTakashi IkimiTomomichi Ito
    • Shuji KatohShigeta UedaHiromitsu SakaiTakashi IkimiTomomichi Ito
    • H03K300
    • H02M1/32H03K17/0828H03K17/107
    • A semiconductor power converting apparatus including at least one series arrangement of MOS control semiconductor devices such as Insulator-gate Bipolar Transistors (IGBTs) or metal oxide MOS transistors which are respectively applied with a gate voltage under the control of corresponding a driver. The driver contains a supply line having a higher potential than a gate voltage of an IGBT coupled thereto when the IGBT is in a steady ON state, and is such that is causes an increase of the gate voltage of the IGBT in accordance with the current of the supply line when a potential difference between the power supply line and an emitter of the IGBT is constant and the collector voltage thereof exceeds a predetermined value under an ON state of the IGBT.
    • 一种半导体功率转换装置,包括在相应的驱动器的控制下分别施加栅极电压的MOS控制半导体器件如绝缘体 - 栅双极晶体管(IGBT)或金属氧化物MOS晶体管的至少一个串联布置。 当IGBT处于稳定导通状态时,驱动器具有比与其耦合的IGBT的栅极电压更高的电位的电源线,并且使得根据电流的电流使IGBT的栅极电压增加 在IGBT的导通状态下,当电源线和IGBT的发射极之间的电位差恒定并且集电极电压超过预定值时,电源线。