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1. 发明授权

US07008731B2 Method of manufacturing a photomask and method of manufacturing a semiconductor device using the photomask 有权
公开(公告)号：US07008731B2
公开(公告)日：2006-03-07
申请号：US10374094
申请日：2003-02-27
申请人： Shigeki Nojima , Osamu Ikenaga
发明人： Shigeki Nojima , Osamu Ikenaga
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F1/84 , G03F7/705 , G03F7/70625
摘要： A method of manufacturing a photomask includes determining dimensions of a pattern in a photomask, determining an exposure latitude on the basis of the dimensions of the mask, and judging if the photomask is defective or non-defective on the basis of whether or not the exposure latitude falls within a prescribed exposure latitude. The pattern in the photomask includes dimensions of critical pattern portions in which an exposure latitude is low.

2. 发明授权

US07229721B2 Method for evaluating photo mask and method for manufacturing semiconductor device 失效
标题翻译：评估光掩膜的方法和制造半导体器件的方法
公开(公告)号：US07229721B2
公开(公告)日：2007-06-12
申请号：US10705954
申请日：2003-11-13
申请人： Shoji Mimotogi , Shigeki Nojima , Osamu Ikenaga
发明人： Shoji Mimotogi , Shigeki Nojima , Osamu Ikenaga
IPC分类号： G03F1/00
CPC分类号： G03F7/70625 , G03F1/44 , G03F1/68 , G03F1/78 , G03F7/705
摘要： A method for evaluating a photo mask comprises preparing a photo mask including a unit drawing pattern, finding a dimensional variation relating to the photo mask, the dimensional variation including first and second dimensional variations, the first dimensional variation occurring due to a positional displacement and size mismatch of the unit drawing pattern in the photo mask and the second dimensional variation occurring due to etching and development relating to a manufacturing of the photo mask, estimating a deteriorated amount of an exposure latitude occurring due to the dimensional variation of the photo mask using the dimensional variation and a degree of influence of the dimensional variation for the exposure latitude, and judging quality of the photo mask by comparing the deteriorated amount of the exposure latitude and an allowable deteriorated amount of the exposure latitude.
摘要翻译：一种用于评估光掩模的方法包括制备包括单元绘图图案的光掩模，找到与光掩模相关的尺寸变化，包括第一和第二尺寸变化的尺寸变化，由于位置偏移和尺寸而发生的第一尺寸变化光掩模中的单位绘图图案的不匹配以及由于与光掩模的制造相关的蚀刻和显影而发生的第二尺寸变化，估计由于光掩膜的尺寸变化而产生的曝光宽容度的恶化量，通过比较曝光宽容度的劣化量和曝光宽容度的允许恶化量来判断曝光宽容度的尺寸变化和影响程度，以及判断光掩模的质量。

3. 发明申请

US20060190875A1 Pattern extracting system, method for extracting measuring points, method for extracting patterns, and computer program product for extracting patterns 审中-公开
标题翻译：模式提取系统，提取测点的方法，提取模式的方法，以及提取模式的计算机程序产品
公开(公告)号：US20060190875A1
公开(公告)日：2006-08-24
申请号：US11325515
申请日：2006-01-05
申请人： Yukiyasu Arisawa , Osamu Ikenaga , Shigeki Nojima , Shigeru Hasebe
发明人： Yukiyasu Arisawa , Osamu Ikenaga , Shigeki Nojima , Shigeru Hasebe
IPC分类号： G06F17/50
CPC分类号： G03F7/7065 , G03F1/36 , G03F1/68 , G03F1/84
摘要： A pattern extracting system includes a sampler configured to sample test candidate patterns from a circuit pattern, based on a lithographic process tolerance, a space classification module configured to classify the test candidate patterns into space distance groups depending on a space distance to an adjacent pattern, a density classification module configured to classify the test candidate patterns into pattern density groups depending on a surrounding pattern density, and an assessment module configured to assess actual measurements of dimensional errors of the test candidate patterns classified into the space distance groups and the pattern density groups.
摘要翻译：模式提取系统包括：取样器，被配置为基于光刻处理容限从电路图案中取样测试候选图案;空间分类模块，被配置为根据与相邻图案的空间距离将测试候选图案分类为空间距离组; 密度分类模块，其被配置为根据周围图案密度将测试候选图案分类为图案密度组;以及评估模块，其被配置为评估分类为空间距离组和图案密度组的测试候选模式的尺寸误差的实际测量值。

4. 发明授权

US07090949B2 Method of manufacturing a photo mask and method of manufacturing a semiconductor device 有权
标题翻译：制造光掩模的方法和制造半导体器件的方法
公开(公告)号：US07090949B2
公开(公告)日：2006-08-15
申请号：US10724738
申请日：2003-12-02
申请人： Shigeki Nojima , Shoji Mimotogi , Satoshi Tanaka , Toshiya Kotani , Shigeru Hasebe , Koji Hashimoto , Soichi Inoue , Osamu Ikenaga
发明人： Shigeki Nojima , Shoji Mimotogi , Satoshi Tanaka , Toshiya Kotani , Shigeru Hasebe , Koji Hashimoto , Soichi Inoue , Osamu Ikenaga
IPC分类号： G01F9/00
CPC分类号： G03F1/36 , G03F1/68
摘要： Disclosed is a method of manufacturing a photo mask comprising preparing mask data for a mask pattern to be formed on a mask substrate, calculating edge moving sensitivity with respect to each of patterns included in the mask pattern using the mask data, the edge moving sensitivity corresponding to a difference between a proper exposure dose and an exposure dose to be set when a pattern edge varies, determining a monitor portion of the mask pattern, based on the calculated edge moving sensitivity, actually forming the mask pattern on the mask substrate, acquiring a dimension of a pattern included in that portion of the mask pattern formed on the mask substrate which corresponds to the monitor portion, determining evaluation value for the mask pattern formed on the mask substrate, based on the acquired dimension, and determining whether the evaluation value satisfies predetermined conditions.
摘要翻译：公开了一种制造光掩模的方法，其包括：对掩模基板上形成的掩模图案准备掩模数据，使用掩模数据计算相对于包含在掩模图案中的每个图案的边缘移动灵敏度，边缘移动灵敏度对应对于在图案边缘变化时要设置的适当曝光剂量和曝光剂量之间的差异，基于计算出的边缘移动灵敏度确定掩模图案的监视部分，实际在掩模基板上形成掩模图案，获取基于所获取的尺寸，确定在掩模基板上形成的掩模图案的评估值，并且确定评估值是否满足的掩模图案的形成在掩模基板上的对应于监视部分的掩模图案的部分中的图案的尺寸预定条件。

5. 发明授权

US06649310B2 Method of manufacturing photomask 有权
标题翻译：制造光掩模的方法
公开(公告)号：US06649310B2
公开(公告)日：2003-11-18
申请号：US09940578
申请日：2001-08-29
申请人： Masamitsu Itoh , Shigeki Nojima , Shoji Mimotogi , Osamu Ikenaga
发明人： Masamitsu Itoh , Shigeki Nojima , Shoji Mimotogi , Osamu Ikenaga
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F7/70558 , G03F7/70591 , G03F7/70625
摘要： A method of manufacturing a photomask includes determining an average value of dimensions of a pattern in a photomask. determining an in-plane uniformity of the dimensions, determining an exposure latitude on the basis of the average value and the in-plane uniformity. The exposure latitude depends on dimensional accuracy of the pattern. Judging if the photomask is defective or non-defective is made on the basis of whether or not the exposure latitude falls within a prescribed exposure latitude
摘要翻译：制造光掩模的方法包括确定光掩模中图案的尺寸的平均值。确定尺寸的面内均匀性，基于平均值和平面内均匀性确定曝光宽容度。曝光宽容度取决于图案的尺寸精度。根据曝光宽容度是否落在规定的曝光宽容范围内，判断光掩模是否有缺陷或无缺陷

6. 发明授权

US07742162B2 Mask defect inspection data generating method, mask defect inspection method and mask production method 失效
标题翻译：掩模缺陷检查数据生成方法，掩模缺陷检查方法和掩模生产方法
公开(公告)号：US07742162B2
公开(公告)日：2010-06-22
申请号：US12187868
申请日：2008-08-07
申请人： Tomohiro Tsutsui , Ryoji Yoshikawa , Osamu Ikenaga
发明人： Tomohiro Tsutsui , Ryoji Yoshikawa , Osamu Ikenaga
IPC分类号： G01N21/00
CPC分类号： G01N21/95607 , G01N2021/8887 , G01N2021/95676
摘要： According to a mask defect inspection data generating method, a distance between inspection areas neighboring in a predetermined direction is calculated based on inspection area control information defined in photomask inspection data. It is determined whether or not the calculated distance between inspection areas is less than a predetermined distance. When it is determined that the distance between inspection areas is less than a predetermined distance, the inspection area is combined to produce an optimization inspection area. The produced optimization inspection area information is defined in inspection layout data for making a reference in die-to-database defect inspection.
摘要翻译：根据掩模缺陷检查数据生成方法，基于光掩模检查数据中定义的检查区域控制信息来计算在预定方向上相邻的检查区域之间的距离。确定所计算的检查区域之间的距离是否小于预定距离。当确定检查区域之间的距离小于预定距离时，组合检查区域以产生优化检查区域。生成的优化检查区域信息在检查布局数据中定义，用于在数据库到数据库缺陷检查中进行参考。

7. 发明申请

US20120049396A1 PATTERN FORMING METHOD AND PATTERN FORMING DEVICE 审中-公开
标题翻译：图案形成方法和图案形成装置
公开(公告)号：US20120049396A1
公开(公告)日：2012-03-01
申请号：US13217698
申请日：2011-08-25
申请人： Tomohiro Tsutsui , Osamu Ikenaga , Ryoichi Inanami
发明人： Tomohiro Tsutsui , Osamu Ikenaga , Ryoichi Inanami
IPC分类号： B29C59/02
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, a pattern forming method includes transferring a first pattern area of a plurality of pattern areas to a to-be-processed substrate, by using a template on which the plurality of pattern areas, where patterns are formed on a substrate, are disposed, counting up a number of times of transfer of the first pattern area, and storing the number of times of transfer, determining whether the stored number of times of transfer of the pattern of the first pattern area has exceeded a specified number, and executing switching to a second pattern of the plurality of pattern areas when it is determined, at a time of the determining, that the stored number of times of transfer of the pattern of the first pattern area has exceeded the specified number, and transferring the second pattern area to the to-be-processed substrate.
摘要翻译：根据一个实施例，图案形成方法包括通过使用其上在基板上形成图案的多个图案区域的模板将多个图案区域的第一图案区域转印到待处理基板，对第一图案区域的传送次数进行计数，并存储传送次数，确定存储的第一图案区域的图案的传送次数是否超过规定数量;以及当确定时确定存储的第一图案区域的图案的传送次数已经超过指定的数量，并且将第二图案区域的第二图案转移到第二图案区域的第二图案图案区域到待处理的基板。

8. 发明授权

US08036446B2 Semiconductor mask inspection using die-to-die and die-to-database comparisons 有权
标题翻译：半导体掩模检测使用模 - 模和模 - 数据库比较
公开(公告)号：US08036446B2
公开(公告)日：2011-10-11
申请号：US11439989
申请日：2006-05-25
申请人： Osamu Ikenaga , Tomohiro Tsutsui
发明人： Osamu Ikenaga , Tomohiro Tsutsui
IPC分类号： G06K9/00
CPC分类号： G03F1/84
摘要： A mask forming method includes preparing design data of mask including pattern regions having identical repetition patterns respectively, generating mask pattern data of mask based on the design data, generating inspection control information for controlling inspection of defect on mask based on the mask pattern data, the information including positional information of the pattern regions and inspection sensitivity information of the repetition pattern, providing the inspection control information to mask pattern data, forming mask pattern of mask based on the mask pattern data, and inspecting the mask pattern based on the mask pattern data comprising inspecting portion in the mask pattern different from the pattern regions by Die-to-Database comparison method, the inspecting the portion including selecting portion corresponding to repetition pattern from the mask pattern based on the positional information, and inspecting the selected portion by Die-to-Die comparison method at an inspection sensitivity corresponding to inspection sensitivity information.
摘要翻译：掩模形成方法包括：分别准备包括具有相同重复图案的图案区域的掩模的设计数据，基于设计数据生成掩模的掩模图案数据，产生用于基于掩模图案数据控制掩模缺陷检查的检查控制信息，包括图案区域的位置信息和重复图案的检查灵敏度信息的信息，提供检查控制信息以屏蔽图案数据，基于掩模图案数据形成掩模的掩模图案，以及基于掩模图案数据检查掩模图案包括通过模 - 数据库比较方法在不同于图案区域的掩模图案中的检查部分，基于位置信息检查包括与掩模图案相对应的重复图案的选择部分的部分，并且通过Die- 灵感的对比比较方法检测灵敏度对应检测灵敏度信息。

9. 发明申请

US20090202924A1 METHOD OF EVALUATING A PHOTO MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：评估照相掩模的方法和制造半导体器件的方法
公开(公告)号：US20090202924A1
公开(公告)日：2009-08-13
申请号：US12360929
申请日：2009-01-28
申请人： Hiroki YAMAMOTO , Masamitsu Itoh , Osamu Ikenaga , Shoji Mimotogi , Hideki Kanai , Yukiyasu Arisawa
发明人： Hiroki YAMAMOTO , Masamitsu Itoh , Osamu Ikenaga , Shoji Mimotogi , Hideki Kanai , Yukiyasu Arisawa
IPC分类号： G03F1/00 , H01L21/027
CPC分类号： G03F1/84
摘要： A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value.
摘要翻译：一种评估光掩模的方法，包括测量形成在光掩模上的掩模图案的多个图案部分的每个尺寸，获得图案部分与不同于图案部分的图案之间的图案间距离获得图形部分的测量尺寸与图案部分相对于每个图案部分的目标尺寸之间的尺寸差，将根据每个图案部分获得的尺寸差分成多组对于每个图案部分获得的图案间距离，基于每个组中的每个组的尺寸差获得评估值，并且基于评估值来评估光罩。

10. 发明授权

US4878177A Method for drawing a desired circuit pattern using charged particle beam 失效
标题翻译：使用带电粒子束绘制所需电路图案的方法
公开(公告)号：US4878177A
公开(公告)日：1989-10-31
申请号：US155027
申请日：1988-02-11
申请人： Osamu Ikenaga , Susumu Watanabe
发明人： Osamu Ikenaga , Susumu Watanabe
IPC分类号： H01L21/027 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/3174 , H01J2237/31764 , H01J2237/31776
摘要： There is disclosed a specific method, which is applied to a charged particle beam pattern drawing system, for drawing a circuit pattern on a workpiece using a charged particle beam. A circuit pattern to be drawn is first divided into unit figures by parallel line segments extending from the vertexes of the figure that has a polygonal planar shape in a first reference direction. Each of the unit figures corresponds to a specific reference figure registered in advance. When the divided unit figures include an elongated too-small figure having at least one side shorter than a predetermined minimum allowable length, the too-small figure is merged with at least one unit figure adjacent to it at least once, and thus an expanded unit figure is defined. The expanded unit figure is divided into new unit figures by parallel line segments extending from its vertexes in a second reference direction perpendicular to the first reference direction so as to correspond to the reference figures. As a result, remaining of the too-small figures in the circuit pattern to be actually subjected to charged particle beam pattern drawing is minimized.
摘要翻译：公开了一种特定的方法，其应用于带电粒子束图形绘制系统，用于使用带电粒子束在工件上绘制电路图案。要绘制的电路图案首先通过从图中顶点延伸的平行线段划分为单元图，该平面线段在第一参考方向上具有多边形平面形状。每个单位图对应于预先登记的具体参考图。当分割单元图形包括具有比预定的最小允许长度短的至少一边的细长太小图形时，太小的图形与与其相邻的至少一个单位图形合并至少一次，因此扩展单元图定义。扩展的单位图由平行线段分割成新的单位图形，其平行线段从垂直于第一参考方向的第二参考方向从其顶点延伸，以对应于参考图形。结果，使电路图案中实际经受带电粒子束图案绘制的太小图形的剩余量最小化。

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