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1. 发明授权

US06791233B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06791233B2
公开(公告)日：2004-09-14
申请号：US10053576
申请日：2002-01-24
申请人： Shigeaki Tomonari , Hitoshi Yoshida , Masanao Kamakura , Hiroshi Kawada , Masaaki Saito , Kazuhiro Nobutoki , Jun Ogihara , Shuichi Nagao
发明人： Shigeaki Tomonari , Hitoshi Yoshida , Masanao Kamakura , Hiroshi Kawada , Masaaki Saito , Kazuhiro Nobutoki , Jun Ogihara , Shuichi Nagao
IPC分类号： H02N1000
CPC分类号： F15C5/00 , F16K99/0001 , F16K99/0009 , F16K99/0044 , F16K2099/0074 , F16K2099/008 , H01H2061/006
摘要： A flexible area 2 is joined at one end via a thermal insulation area 7 to a semiconductor substrate 3 which becomes a frame and at an opposite end to a moving element 5. The thermal insulation area 7 is made of a thermal insulation material a resin such as polyimide or a fluoridated resin. The flexible area 2 is made up of a thin portion 2S and a thin film 2M different in thermal expansion coefficient. When a diffused resistor 6 formed on the surface of the thin portion 2S is heated, the flexible area 2 is displaced because of the thermal expansion difference between the thin portion 2S and the thin film 2M, and the moving element 5 is displayed with respect to the semiconductor substrate 3.
摘要翻译：柔性区域2的一端经由隔热区域7连接到半导体基板3，该半导体基板3成为框架并且在与移动元件5相反的端部。绝热区域7由诸如以下的树脂的绝热材料制成作为聚酰亚胺或氟化树脂。柔性区域2由薄的部分2S和热膨胀系数不同的薄膜2M组成。当形成在薄部分2S的表面上的扩散电阻器6被加热时，柔性区域2由于薄部分2S和薄膜2M之间的热膨胀差异而移位，并且移动元件5相对于半导体衬底3。

2. 发明授权

US06384509B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06384509B1
公开(公告)日：2002-05-07
申请号：US09511948
申请日：2000-02-23
申请人： Shigeaki Tomonari , Hitoshi Yoshida , Masanao Kamakura , Hiroshi Kawada , Masaaki Saito , Kazuhiro Nobutoki , Jun Ogihara , Shuichi Nagao
发明人： Shigeaki Tomonari , Hitoshi Yoshida , Masanao Kamakura , Hiroshi Kawada , Masaaki Saito , Kazuhiro Nobutoki , Jun Ogihara , Shuichi Nagao
IPC分类号： F03G706
CPC分类号： F16K99/0001 , F15C5/00 , F16K99/0007 , F16K99/0009 , F16K99/0015 , F16K99/0044 , F16K2099/0074 , F16K2099/008 , H01H2061/006
摘要： A flexible area 2 is joined at one end via a thermal insulation area 7 to a semiconductor substrate 3 which becomes a frame and at an opposite end to a moving element 5. The thermal insulation area 7 is made of a thermal insulation material a resin such as polyimide or a fluoridated resin. The flexible area 2 is made up of a thin portion 2S and a thin film 2M different in thermal expansion coefficient. When a diffused resistor 6 formed on the surface of the thin portion 2S is heated, the flexible area 2 is displaced because of the thermal expansion difference between the thin portion 2S and the thin film 2M, and the moving element 5 is displayed with respect to the semiconductor substrate 3.
摘要翻译：柔性区域2的一端经由隔热区域7连接到半导体基板3，该半导体基板3成为框架并且在与移动元件5相对的端部。绝热区域7由诸如以下的树脂的绝热材料制成作为聚酰亚胺或氟化树脂。柔性区域2由薄的部分2S和热膨胀系数不同的薄膜2M组成。当形成在薄部分2S的表面上的扩散电阻器6被加热时，柔性区域2由于薄部分2S和薄膜2M之间的热膨胀差异而移位，并且移动元件5相对于半导体衬底3。

3. 发明授权

US06293149B1 Acceleration sensor element and method of its manufacture 失效
标题翻译：加速度传感器元件及其制造方法
公开(公告)号：US06293149B1
公开(公告)日：2001-09-25
申请号：US09147155
申请日：1998-10-20
申请人： Hitoshi Yoshida , Shigeaki Tomonari , Naomasa Oka , Takuro Nakamura , Takuro Ishida , Masanao Kamakura , Fumihiro Kasano
发明人： Hitoshi Yoshida , Shigeaki Tomonari , Naomasa Oka , Takuro Nakamura , Takuro Ishida , Masanao Kamakura , Fumihiro Kasano
IPC分类号： G01P1500
CPC分类号： G01P15/123 , G01P15/0802 , G01P15/125 , G01P15/18 , G01P2015/084 , G01P2015/0842
摘要： A flexure transducer element used in an acceleration sensor for sensing an acceleration applied thereto and the method of making the same. The flexure transducer element comprises a frame, a sheet member, a weight, and a support member.
摘要翻译：用于感测施加到其上的加速度的加速度传感器中使用的挠曲传感器元件及其制造方法。弯曲换能器元件包括框架，片状构件，重物和支撑构件。

4. 发明授权

US5426412A Infrared detecting device and infrared detecting element for use in the device 失效
标题翻译：用于该装置的红外检测装置和红外线检测元件
公开(公告)号：US5426412A
公开(公告)日：1995-06-20
申请号：US141336
申请日：1993-10-26
申请人： Shigeaki Tomonari , Jun Sakai , Kouichi Aizawa , Keizi Kakite , Takayoshi Awai , Takuro Nakamura , Takuro Ishida , Tsutomu Ichihara , Hitoshi Yoshida , Shigenari Takami , Sadayuki Sumi
发明人： Shigeaki Tomonari , Jun Sakai , Kouichi Aizawa , Keizi Kakite , Takayoshi Awai , Takuro Nakamura , Takuro Ishida , Tsutomu Ichihara , Hitoshi Yoshida , Shigenari Takami , Sadayuki Sumi
IPC分类号： G01J5/10 , G01J5/20 , H01C7/02 , H01L31/08
CPC分类号： G01J5/04 , G01J5/045 , G01J5/20 , H01C7/021 , G01J2005/103
摘要： An infrared detecting arrangement includes an infrared detecting element having a heat insulating film and an infrared detector which are disposed between an interior space of a hermetically sealed casing for the element and a cavity formed within a substrate of the element and communicating through a ventilator with the interior space.
摘要翻译：红外检测装置包括具有隔热膜和红外检测器的红外检测元件，该红外检测元件设置在用于该元件的气密密封外壳的内部空间和形成在元件的基板内的空腔之间，并且通过通气机与内部空间。

5. 发明授权

US5047090A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5047090A
公开(公告)日：1991-09-10
申请号：US480203
申请日：1990-02-14
申请人： Yutaka Hayashi , Shigeaki Tomonari , Jun Sakai , Keizi Kakite
发明人： Yutaka Hayashi , Shigeaki Tomonari , Jun Sakai , Keizi Kakite
IPC分类号： H01L31/10 , H01L27/144 , H01L31/075 , H01L31/101
CPC分类号： H01L31/076 , H01L27/1443 , H01L31/101 , Y02E10/548 , Y10S136/291 , Y10S136/293
摘要： A semiconductor device includes laminated photoelectric conversion elements each having a semiconductor thin film carrying out the photoelectric conversion, the respective semiconductor thin film having a relationship L.ltoreq.1/.alpha.(.lambda.) when incident light is of a wavelength .lambda., the semiconductor thin film is of an absorbtion coefficient .alpha.(.lambda.) with respect to the light of the wavelength .lambda. and the carrier collecting length is L, whereby the optimum combination of the incident light wavelength and the sensitivity of the device can be obtained to realize a high photoelectric conversion efficiency.
摘要翻译：半导体器件包括各自具有执行光电转换的半导体薄膜的层叠光电转换元件，当入射光为波长λ时，相应的半导体薄膜具有L 1 /α（λ）的关系，半导体薄膜膜相对于波长λ的光具有吸收系数α（λ），载流子收集长度为L，由此可以获得入射光波长与器件灵敏度的最佳组合，以实现高光电转换效率。

6. 发明授权

US4916323A Optical control circuit and a semiconductor device for realizing same 失效
标题翻译：光控电路及实现其的半导体器件
公开(公告)号：US4916323A
公开(公告)日：1990-04-10
申请号：US247081
申请日：1988-09-21
申请人： Yutaka Hayashi , Shigeaki Tomonari , Keizi Kakite , Jun Sakai
发明人： Yutaka Hayashi , Shigeaki Tomonari , Keizi Kakite , Jun Sakai
IPC分类号： H01L27/15 , H01L27/14 , H01L27/142 , H01L31/02 , H01L31/042 , H03K17/78
CPC分类号： H01L31/02021 , H01L31/046 , Y02E10/50 , Y10S136/293
摘要： An optical control circuit is formed by a first transistor, a first resistive element connected between control electrode and first output electrode of the first transistor. The first output electrode forms an emitter or source of the transistor, a second resistive element is connected between the control electrode and second output electrode of the first transistor. The second output electrode forms a collector or drain of the transistor and an array of photovoltaic elements is connected in parallel to the second resistive element. A second transistor has a control electrode connected to the second output electrode of the first transistor. High speed operation of the second transistor can be assured, any noise voltage applied to the control electrode of the second transistor can be effectively bypassed, and the first transistor can be simultaneously formed in a substrate of the second transistor to be integralized therewith.
摘要翻译：光控制电路由第一晶体管，连接在第一晶体管的控制电极和第一输出电极之间的第一电阻元件形成。第一输出电极形成晶体管的发射极或源极，第二电阻元件连接在第一晶体管的控制电极和第二输出电极之间。第二输出电极形成晶体管的集电极或漏极，并且光电元件阵列与第二电阻元件并联连接。第二晶体管具有连接到第一晶体管的第二输出电极的控制电极。可以确保第二晶体管的高速操作，可以有效地绕过施加到第二晶体管的控制电极的任何噪声电压，并且可以将第一晶体管同时形成在与其成一体的第二晶体管的基板中。

7. 发明授权

US4894699A Optical control circuit and semiconductor device for realizing the circuit 失效
标题翻译：用于实现电路的光控制电路和半导体器件
公开(公告)号：US4894699A
公开(公告)日：1990-01-16
申请号：US302079
申请日：1989-01-25
申请人： Yutaka Hayashi , Shigeaki Tomonari , Keizi Kakite
发明人： Yutaka Hayashi , Shigeaki Tomonari , Keizi Kakite
IPC分类号： H01L27/14 , H01L27/142 , H01L27/144 , H01L31/09 , H01L31/12
CPC分类号： H01L31/09 , H01L27/1443 , H01L31/046 , H01L2924/0002 , H03K2017/6875 , Y02E10/50
摘要： An optical control circuit is formed by connecting a photoconductive element and resistive element at their one end to the control electrode of a transistor, while connecting the other end of the photoconductive element to one of output electrodes of the transistor and the other end of the resistive element to a predetermined voltage supply point. With this simple circuit arrangement, an effective input control with respect to the control electrode of the transistor can be realized.
摘要翻译：通过将光电导元件和电阻元件的一端连接到晶体管的控制电极，同时将光电导元件的另一端连接到晶体管的输出电极和电阻的另一端之一来形成光控制电路元件连接到预定的电压供应点。利用这种简单的电路装置，可以实现相对于晶体管的控制电极的有效输入控制。

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