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1. 发明申请

US20100200409A1 SOLUTION DEPOSITION AND METHOD WITH SUBSTRATE MAKING 审中-公开
标题翻译：解决方案沉积和方法与基板制造
公开(公告)号：US20100200409A1
公开(公告)日：2010-08-12
申请号：US12369054
申请日：2009-02-11
申请人： Shengzhong Liu , Chaolan Hu , Yanhua Zhou , Kais Younan , Bud Dotter, II , Vincent Cannella , Arindam Banerjee , Jeffrey Yang , Subhendu Guha
发明人： Shengzhong Liu , Chaolan Hu , Yanhua Zhou , Kais Younan , Bud Dotter, II , Vincent Cannella , Arindam Banerjee , Jeffrey Yang , Subhendu Guha
IPC分类号： B32B9/00 , C25D5/02 , C25D17/00
CPC分类号： C25D5/022 , C25D5/003 , C25D9/08 , C25D17/00 , C25D21/02 , C25D21/08
摘要： A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device. The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process.
摘要翻译：在溶液沉积工艺中，将诸如透明导电氧化物材料的金属和氧材料电沉积到衬底上。控制工艺参数以便沉积适合用于高效光伏器件的背反射器结构的高质量材料层。沉积可以与掩模构件一起进行，掩模构件用于限制金属和氧气材料沉积到衬底的特定部分。在特定情况下，沉积可以以连续的卷对卷方式实施。还公开了通过本方法制造的半导体器件和半导体器件的部件以及用于执行该过程的装置。

2. 发明申请

US20100200408A1 METHOD AND APPARATUS FOR THE SOLUTION DEPOSITION OF HIGH QUALITY OXIDE MATERIAL 审中-公开
标题翻译：用于高品质氧化物材料沉积的方法和装置
公开(公告)号：US20100200408A1
公开(公告)日：2010-08-12
申请号：US12369045
申请日：2009-02-11
申请人： Shengzhong Liu , Chaolan Hu , Yanhua Zhou , Kais Younan , Bud Dotter, II , Vincent Cannella , Arindam Banerjee , Jeffrey Yang , Subhendu Guha
发明人： Shengzhong Liu , Chaolan Hu , Yanhua Zhou , Kais Younan , Bud Dotter, II , Vincent Cannella , Arindam Banerjee , Jeffrey Yang , Subhendu Guha
IPC分类号： C25D5/00 , C25D7/00 , C25B15/00
CPC分类号： C25D5/20 , C25D5/10 , C25D5/18 , C25D5/36 , C25D9/08 , C25D17/12 , C25D21/10 , C25D21/12
摘要： A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device. The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process.
摘要翻译：在溶液沉积工艺中，将诸如透明导电氧化物材料的金属和氧材料电沉积到衬底上。控制工艺参数以便沉积适合用于高效光伏器件的背反射器结构的高质量材料层。沉积可以与掩模构件一起进行，掩模构件用于限制金属和氧气材料沉积到衬底的特定部分。在特定情况下，沉积可以以连续的卷对卷方式实施。还公开了通过本方法制造的半导体器件和半导体器件的部件以及用于执行该过程的装置。

3. 发明申请

US20100200411A1 METHOD AND APPARATUS FOR THE SOLUTION DEPOSITION OF OXIDE 审中-公开
标题翻译：用于溶解氧化物沉积的方法和装置
公开(公告)号：US20100200411A1
公开(公告)日：2010-08-12
申请号：US12369022
申请日：2009-02-11
申请人： Shengzhong Liu , Chaolan Hu , Yanhua Zhou , Arindam Banerjee , Jeffrey Yang , Subhendu Guha
发明人： Shengzhong Liu , Chaolan Hu , Yanhua Zhou , Arindam Banerjee , Jeffrey Yang , Subhendu Guha
IPC分类号： C25D5/10
CPC分类号： C25D5/022 , C25D5/18 , C25D5/20 , C25D9/08 , C25D17/00
摘要： A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process.
摘要翻译：在溶液沉积工艺中，将诸如透明导电氧化物材料的金属和氧材料电沉积到衬底上。控制工艺参数以便导致适合用于高效光伏器件的后反射器结构的高质量材料层的沉积。沉积可以与操作以限制的掩模构件一起进行金属和氧气材料沉积到衬底的特定部分。在特定情况下，沉积可以以连续的卷对卷方式实施。还公开了通过本方法制造的半导体器件和半导体器件的部件以及用于执行该过程的装置。

4. 发明申请

US20100200413A1 SOLUTION DEPOSITION METHOD AND APPARATUS WITH PARTIPHOBIC SUBSTRATE ORIENTATION 审中-公开
标题翻译：解决方案沉积方法和具有共生基板方位的装置
公开(公告)号：US20100200413A1
公开(公告)日：2010-08-12
申请号：US12369048
申请日：2009-02-11
申请人： Shengzhong Liu , Chaolan Hu , Yanhua Zhou , Arindam Banerjee , Jeffrey Yang , Subhendu Guha
发明人： Shengzhong Liu , Chaolan Hu , Yanhua Zhou , Arindam Banerjee , Jeffrey Yang , Subhendu Guha
IPC分类号： C25D5/00 , C25B9/00
CPC分类号： C25D9/04 , C23C28/00 , C23C28/321 , C23C28/322 , C23C28/345 , C25D5/022 , C25D5/10 , C25D5/50 , C25D7/0607 , C25D7/0628 , C25D9/08 , C25D17/00 , C25D21/10 , C25D21/18
摘要： A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device. The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process.
摘要翻译：在溶液沉积工艺中，将诸如透明导电氧化物材料的金属和氧材料电沉积到衬底上。控制工艺参数以便沉积适合用于高效光伏器件的背反射器结构的高质量材料层。沉积可以与掩模构件一起进行，掩模构件用于限制金属和氧气材料沉积到衬底的特定部分。在特定情况下，沉积可以以连续的卷对卷方式实施。还公开了通过本方法制造的半导体器件和半导体器件的部件以及用于执行该过程的装置。

5. 发明申请

US20100200067A1 SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR ITS MANUFACTURE 审中-公开
标题翻译：用于半导体器件的衬底及其制造方法
公开(公告)号：US20100200067A1
公开(公告)日：2010-08-12
申请号：US12369016
申请日：2009-02-11
申请人： Shengzhong Liu , Yanhua Zhou , Chaolan Hu , Arindam Banerjee , Jeffrey Yang , Subhendu Guha
发明人： Shengzhong Liu , Yanhua Zhou , Chaolan Hu , Arindam Banerjee , Jeffrey Yang , Subhendu Guha
IPC分类号： H01L31/0224 , C25D1/06
CPC分类号： C25D5/022 , C23C28/00 , C23C28/322 , C23C28/345 , C25D5/10 , C25D5/18 , C25D5/20 , C25D5/50 , C25D7/0607 , C25D9/04 , C25D21/10 , H01L31/022425 , H01L31/022483 , H01L31/056 , H01L31/1884 , Y02E10/52
摘要： A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device. The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process.
摘要翻译：在溶液沉积工艺中，将诸如透明导电氧化物材料的金属和氧材料电沉积到衬底上。控制工艺参数以便沉积适合用于高效光伏器件的背反射器结构的高质量材料层。沉积可以与掩模构件一起进行，掩模构件用于限制金属和氧气材料沉积到衬底的特定部分。在特定情况下，沉积可以以连续的卷对卷方式实施。还公开了通过本方法制造的半导体器件和半导体器件的部件以及用于执行该过程的装置。

6. 发明申请

US20080233715A1 METHOD AND APPARATUS FOR THE LASER SCRIBING OF ULTRA LIGHTWEIGHT SEMICONDUCTOR DEVICES 失效
标题翻译：超轻型半导体器件激光扫描的方法和装置
公开(公告)号：US20080233715A1
公开(公告)日：2008-09-25
申请号：US12053712
申请日：2008-03-24
申请人： Shengzhong Liu , Ginger Pietka , Kevin Beernink , Arindam Banerjee , Chi Yang , Subhendu Guha
发明人： Shengzhong Liu , Ginger Pietka , Kevin Beernink , Arindam Banerjee , Chi Yang , Subhendu Guha
IPC分类号： H01L21/268 , B23K26/00
CPC分类号： H01L21/268 , H01L31/046 , H01L31/0465 , H01L31/1876 , Y02E10/50 , Y02P70/521
摘要： A system for the laser scribing of semiconductor devices includes a laser light source operable to selectably deliver laser illumination at a first wavelength and at a second wavelength which is shorter than the first wavelength. The system further includes a support for a semiconductor device and an optical system which is operative to direct the laser illumination from the light source to the semiconductor device. The optical system includes optical elements which are compatible with the laser illumination of the first wavelength and the laser illumination of the second wavelength. In specific instances, the first wavelength is long wavelength illumination such as illumination of at least 1000 nanometers, and the second wavelength is short wavelength illumination which in specific instances is 300 nanometers or shorter. By the use of the differing wavelengths, specific layers of the semiconductor device may be scribed without damage to subjacent layers. Also disclosed are specific scribing processes.
摘要翻译：用于半导体器件的激光刻划的系统包括可操作以可选择地提供比第一波长短的第一波长和第二波长的激光照明的激光光源。该系统还包括用于半导体器件和光学系统的支撑件，该系统可操作以将激光照明从光源引导到半导体器件。光学系统包括与第一波长的激光照射和第二波长的激光照射兼容的光学元件。在具体情况下，第一波长是诸如至少1000纳米的照明的长波长照明，而第二波长是在特定情况下为300纳米或更短的短波长照明。通过使用不同的波长，半导体器件的特定层可以被划刻而不损坏下层。还公开了具体的划线工艺。

7. 发明授权

US07964476B2 Method and apparatus for the laser scribing of ultra lightweight semiconductor devices 失效
标题翻译：超轻型半导体器件的激光划线方法和装置
公开(公告)号：US07964476B2
公开(公告)日：2011-06-21
申请号：US12053712
申请日：2008-03-24
申请人： Shengzhong Liu , Ginger Pietka , Kevin Beernink , Arindam Banerjee , Chi Yang , Subhendu Guha
发明人： Shengzhong Liu , Ginger Pietka , Kevin Beernink , Arindam Banerjee , Chi Yang , Subhendu Guha
IPC分类号： H01L21/00
CPC分类号： H01L21/268 , H01L31/046 , H01L31/0465 , H01L31/1876 , Y02E10/50 , Y02P70/521
摘要： A system for the laser scribing of semiconductor devices includes a laser light source operable to selectably deliver laser illumination at a first wavelength and at a second wavelength which is shorter than the first wavelength. The system further includes a support for a semiconductor device and an optical system which is operative to direct the laser illumination from the light source to the semiconductor device. The optical system includes optical elements which are compatible with the laser illumination of the first wavelength and the laser illumination of the second wavelength. In specific instances, the first wavelength is long wavelength illumination such as illumination of at least 1000 nanometers, and the second wavelength is short wavelength illumination which in specific instances is 300 nanometers or shorter. By the use of the differing wavelengths, specific layers of the semiconductor device may be scribed without damage to subjacent layers. Also disclosed are specific scribing processes.
摘要翻译：用于半导体器件的激光刻划的系统包括可操作以可选择地提供比第一波长短的第一波长和第二波长的激光照明的激光光源。该系统还包括用于半导体器件和光学系统的支撑件，该系统可操作以将激光照明从光源引导到半导体器件。光学系统包括与第一波长的激光照射和第二波长的激光照射兼容的光学元件。在具体情况下，第一波长是诸如至少1000纳米的照明的长波长照明，而第二波长是在特定情况下为300纳米或更短的短波长照明。通过使用不同的波长，半导体器件的特定层可以被划刻而不损坏下层。还公开了具体的划线工艺。

8. 发明申请

US20090029053A1 METHOD FOR STABILIZING SILICONE MATERIAL, STABILIZED SILICONE MATERIAL, AND DEVICES INCORPORATING THAT MATERIAL 审中-公开
标题翻译：用于稳定硅材料，稳定的硅酮材料的方法和与材料合成的装置
公开(公告)号：US20090029053A1
公开(公告)日：2009-01-29
申请号：US11782681
申请日：2007-07-25
申请人： Shengzhong Liu , Arindam Banerjee , Chi Yang , Subhendu Guha
发明人： Shengzhong Liu , Arindam Banerjee , Chi Yang , Subhendu Guha
IPC分类号： B05D3/10 , C08F8/00 , B05D3/06
CPC分类号： H01L31/0481 , B64G1/443 , Y02E10/50
摘要： Darkening of silicone containing materials caused by exposure to ultraviolet illumination is prevented or reversed by exposure of those materials to an atmosphere containing a reactive species, which may comprise activated oxygen. The activated oxygen may be generated by ultraviolet irradiation of the silicone material in an oxygen containing atmosphere. In other instances, the activated oxygen may comprise ozone or some other activated oxygen species. In yet other instances, the reactive species may comprise an oxygen containing material such as nitrous oxide or nitrates. It may also comprise other materials such as halogens, atomic hydrogen, protons or the like. The treatment may be applied prior to ultraviolet exposure so as to prevent or minimize darkening, or it may be applied after darkening has occurred for purposes of reversing the darkening. Also disclosed are silicone materials which have been treated so as to make them resistant to ultraviolet induced darkening, as well as photovoltaic devices which have such silicone materials coated thereupon.
摘要翻译：通过将这些材料暴露于包含活性物质的气氛（其可以包含活性氧）来防止或逆转由暴露于紫外线照射引起的含硅氧烷材料的变暗。活性氧可以通过在含氧气氛中的硅氧烷材料的紫外线照射而产生。在其他情况下，活化的氧可以包括臭氧或一些其它活化的氧物质。在其他情况下，反应性物质可以包含含氧材料如一氧化二氮或硝酸盐。它还可以包括其它材料，例如卤素，原子氢，质子等。在紫外线照射之前可以进行处理，以防止或最小化变暗，或者可以在发生变暗之后施加以改变变暗的目的。还公开了已经被处理以使其耐紫外线诱导的变暗的硅材料，以及在其上涂覆了这种硅氧烷材料的光伏器件。

9. 发明申请

US20090075483A1 ULTRA LIGHTWEIGHT PHOTOVOLTAIC DEVICE AND METHOD FOR ITS MANUFACTURE 失效
标题翻译：超轻型照明设备及其制造方法
公开(公告)号：US20090075483A1
公开(公告)日：2009-03-19
申请号：US11254838
申请日：2005-10-20
申请人： Subhendu Guha , Arindam Banerjee , Kevin Beernink , Todd Johnson , Ginger Pietka , Gregory DeMaggio , Shengzhong (Frank) Liu , Jeffrey Yang
发明人： Subhendu Guha , Arindam Banerjee , Kevin Beernink , Todd Johnson , Ginger Pietka , Gregory DeMaggio , Shengzhong (Frank) Liu , Jeffrey Yang
IPC分类号： H01L21/311 , H01L31/04
CPC分类号： H01L31/18 , H01L31/0392 , Y02E10/50
摘要： An ultra lightweight semiconductor device such as a photovoltaic device is fabricated on a non-etchable barrier layer which is disposed upon an etchable substrate. The device is contacted with an appropriate etchant for a period of time sufficient to remove at least a portion of the thickness of the substrate. The barrier layer prevents damage to the photovoltaic material during the etching process. Photovoltaic devices fabricated by this method have specific power levels in excess of 300 w/kg.
摘要翻译：诸如光电器件的超轻量半导体器件被制造在不可蚀刻的阻挡层上，其被设置在可蚀刻的衬底上。该装置与合适的蚀刻剂接触足以消除基底厚度的至少一部分的时间。阻挡层防止在蚀刻过程中损坏光伏材料。通过该方法制造的光伏器件具有超过300w / kg的特定功率水平。

10. 发明授权

US07517465B2 Ultra lightweight photovoltaic device and method for its manufacture 失效
标题翻译：超轻型光伏器件及其制造方法
公开(公告)号：US07517465B2
公开(公告)日：2009-04-14
申请号：US11254838
申请日：2005-10-20
申请人： Subhendu Guha , Arindam Banerjee , Kevin Beernink , Todd Johnson , Ginger Pietka , Gregory DeMaggio , Shengzhong (Frank) Liu , Jeffrey Yang
发明人： Subhendu Guha , Arindam Banerjee , Kevin Beernink , Todd Johnson , Ginger Pietka , Gregory DeMaggio , Shengzhong (Frank) Liu , Jeffrey Yang
IPC分类号： B29D11/00 , H01L31/06
CPC分类号： H01L31/18 , H01L31/0392 , Y02E10/50
摘要： An ultra lightweight semiconductor device such as a photovoltaic device is fabricated on a non-etchable barrier layer which is disposed upon an etchable substrate. The device is contacted with an appropriate etchant for a period of time sufficient to remove at least a portion of the thickness of the substrate. The barrier layer prevents damage to the photovoltaic material during the etching process. Photovoltaic devices fabricated by this method have specific power levels in excess of 300 w/kg.
摘要翻译：诸如光电器件的超轻量半导体器件被制造在不可蚀刻的阻挡层上，其被设置在可蚀刻的衬底上。该装置与合适的蚀刻剂接触足以消除基底厚度的至少一部分的时间。阻挡层防止在蚀刻过程中损坏光伏材料。通过该方法制造的光伏器件具有超过300w / kg的特定功率水平。

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