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1. 发明授权

US07462844B2 Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation 有权
标题翻译：用于改善高倾斜离子注入中的掺杂均匀性的方法，系统和装置
公开(公告)号：US07462844B2
公开(公告)日：2008-12-09
申请号：US11241406
申请日：2005-09-30
申请人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph C. Olson , Donna Smatlak , Damian Brennan , William Bintz
发明人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph C. Olson , Donna Smatlak , Damian Brennan , William Bintz
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/20207 , H01J2237/24405 , H01J2237/2446 , H01J2237/31703
摘要： The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.
摘要翻译：本发明提供了一种用于改善离子注入期间掺杂均匀性的方法，系统和装置，特别是在高倾斜离子注入期间。在一个实施例中，本发明提供了一种用于改善高倾斜离子注入中的掺杂均匀性的方法，所述方法包括以下步骤：沿垂直于离子束扫描平面的轴定位晶片，以形成晶片的表面之间的角度晶片和垂直于离子束的平面; 通过在与晶片表面基本共面的路径中移动电流检测器跨越离子束来测量离子束的电流; 以及基于测量步骤调整离子束电流的掺杂均匀性。

2. 发明申请

US20070085037A1 Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation 有权
标题翻译：用于改善高倾斜离子注入中的掺杂均匀性的方法，系统和装置
公开(公告)号：US20070085037A1
公开(公告)日：2007-04-19
申请号：US11241406
申请日：2005-09-30
申请人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph Olson , Donna Smatlak , Damian Brennan , William Bintz
发明人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph Olson , Donna Smatlak , Damian Brennan , William Bintz
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/20207 , H01J2237/24405 , H01J2237/2446 , H01J2237/31703
摘要： The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.
摘要翻译：本发明提供了一种用于改善离子注入期间掺杂均匀性的方法，系统和装置，特别是在高倾斜离子注入期间。在一个实施例中，本发明提供了一种用于改善高倾斜离子注入中的掺杂均匀性的方法，所述方法包括以下步骤：沿垂直于离子束扫描平面的轴定位晶片，以形成晶片的表面之间的角度晶片和垂直于离子束的平面; 通过在与晶片表面基本共面的路径中移动电流检测器跨越离子束来测量离子束的电流; 以及基于测量步骤调整离子束电流的掺杂均匀性。

3. 发明授权

US07253423B2 Technique for uniformity tuning in an ion implanter system 有权
标题翻译：离子注入机系统均匀性调整技术
公开(公告)号：US07253423B2
公开(公告)日：2007-08-07
申请号：US11135307
申请日：2005-05-24
申请人： Shengwu Chang , Joseph C. Olson , Damian Brennan
发明人： Shengwu Chang , Joseph C. Olson , Damian Brennan
IPC分类号： H01J37/302
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/24542 , H01J2237/30483 , H01J2237/31703
摘要： A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a plurality of predetermined locations along a beam path. The method may also comprise calculating an ion beam profile along the beam path based at least in part on the ion beam measurements at the plurality of predetermined locations. The method may further comprise determining a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.
摘要翻译：公开了一种用于离子注入机系统中均匀性调谐的技术。在一个特定的示例性实施例中，该技术可以被实现为用于离子注入机系统中的均匀性调谐的方法。该方法可以包括在沿着光束路径的多个预定位置处测量离子束。该方法还可以包括至少部分地基于多个预定位置处的离子束测量来计算沿着光束路径的离子束分布。该方法可以进一步包括至少部分地基于所计算的离子束分布来确定沿着光束路径的期望速度分布，使得当根据期望的速度分布扫描时，离子束沿着光束路径产生期望的离子束分布。

4. 发明授权

US07355188B2 Technique for uniformity tuning in an ion implanter system 有权
标题翻译：离子注入机系统均匀性调整技术
公开(公告)号：US07355188B2
公开(公告)日：2008-04-08
申请号：US11300425
申请日：2005-12-15
申请人： Joseph C. Olson , Jonathan Gerald England , Morgan D. Evans , Douglas Thomas Fielder , Gregg Alexander Norris , Shengwu Chang , Damian Brennan , William Gray Callahan
发明人： Joseph C. Olson , Jonathan Gerald England , Morgan D. Evans , Douglas Thomas Fielder , Gregg Alexander Norris , Shengwu Chang , Damian Brennan , William Gray Callahan
IPC分类号： H01J37/317
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/24542 , H01J2237/30483 , H01J2237/31703
摘要： A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.
摘要翻译：公开了一种用于离子注入机系统中均匀性调谐的技术。在一个特定的示例性实施例中，该技术可以被实现为用于离子束均匀性调谐的方法。该方法可以包括在离子注入机系统中产生离子束。该方法还可以包括调整离子注入系统中的一个或多个束线元件，以便当沿着光束路径扫描离子束时，减小离子束的束斑的变化。该方法还可以包括调整用于沿着光束路径扫描离子束的速度分布，使得离子束沿着光束路径产生基本均匀的离子束分布。

5. 发明授权

US07397047B2 Technique for tuning an ion implanter system 有权
标题翻译：调整离子注入机系统的技术
公开(公告)号：US07397047B2
公开(公告)日：2008-07-08
申请号：US11123082
申请日：2005-05-06
申请人： Shengwu Chang , Joseph C. Olson , Damian Brennan
发明人： Shengwu Chang , Joseph C. Olson , Damian Brennan
IPC分类号： H01J37/302
CPC分类号： H01J37/3171 , H01J37/3023 , H01J2237/30411 , H01J2237/31703
摘要： A technique for tuning an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for tuning an ion implanter system having multiple beam-line elements. The method may comprise establishing one or more relationships among the multiple beam-line elements. The method may also comprise adjusting the multiple beam-line elements in a coordinated manner, based at least in part on the one or more established relationships, to produce a desired beam output.
摘要翻译：公开了一种用于调整离子注入机系统的技术。在一个特定的示例性实施例中，该技术可以被实现为用于调整具有多个光束线元件的离子注入系统的方法。该方法可以包括在多个波束线元件之间建立一个或多个关系。该方法还可以包括至少部分地基于一个或多个已建立的关系以协调的方式调整多个光束线元件以产生期望的光束输出。

6. 发明申请

US20060169922A1 Ion implant ion beam parallelism and direction integrity determination and adjusting 审中-公开
标题翻译：离子注入离子束平行度和方向完整性确定和调整
公开(公告)号：US20060169922A1
公开(公告)日：2006-08-03
申请号：US11246410
申请日：2005-10-07
申请人： Shengwu Chang , Joseph Olson , Damian Brennan
发明人： Shengwu Chang , Joseph Olson , Damian Brennan
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/244 , H01J2237/31703
摘要： A system, method and program product for controlling parallelism and/or direction integrity of an ion beam generated by an ion implanter system are disclosed. The invention utilizes multiple faraday cups to measure a profile of at least a portion of the ion beam. The results of the measurement are then processed to determine parallelism and/or direction integrity of the ion beam. The results of the parallelism and/or direction integrity determination are then used to adjust the ion implanter system operating parameters to control parallelism and the direction of the ion beam.
摘要翻译：公开了一种用于控制由离子注入机系统产生的离子束的并行性和/或方向完整性的系统，方法和程序产品。本发明利用多个法拉第杯来测量离子束的至少一部分的轮廓。然后处理测量结果以确定离子束的平行度和/或方向完整性。然后使用平行度和/或方向完整性确定的结果来调整离子注入系统的操作参数以控制离子束的平行度和方向。

7. 发明申请

US20060284114A1 Technique for uniformity tuning in an ion implanter system 有权
标题翻译：离子注入机系统均匀性调整技术
公开(公告)号：US20060284114A1
公开(公告)日：2006-12-21
申请号：US11300425
申请日：2005-12-15
申请人： Joseph Olson , Jonathan England , Morgan Evans , Douglas Fielder , Gregg Norris , Shengwu Chang , Damian Brennan , William Callahan
发明人： Joseph Olson , Jonathan England , Morgan Evans , Douglas Fielder , Gregg Norris , Shengwu Chang , Damian Brennan , William Callahan
IPC分类号： H01J37/317
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/24542 , H01J2237/30483 , H01J2237/31703
摘要： A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.
摘要翻译：公开了一种用于离子注入机系统中均匀性调谐的技术。在一个特定的示例性实施例中，该技术可以被实现为用于离子束均匀性调谐的方法。该方法可以包括在离子注入机系统中产生离子束。该方法还可以包括调整离子注入系统中的一个或多个束线元件，以便当沿着光束路径扫描离子束时，减小离子束的束斑的变化。该方法还可以包括调整用于沿着光束路径扫描离子束的速度分布，使得离子束沿着光束路径产生基本均匀的离子束分布。

8. 发明申请

US20060266957A1 Technique for uniformity tuning in an ion implanter system 有权
标题翻译：离子注入机系统均匀性调整技术
公开(公告)号：US20060266957A1
公开(公告)日：2006-11-30
申请号：US11135307
申请日：2005-05-24
申请人： Shengwu Chang , Joseph Olson , Damian Brennan
发明人： Shengwu Chang , Joseph Olson , Damian Brennan
IPC分类号： H01J37/302
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/24542 , H01J2237/30483 , H01J2237/31703
摘要： A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a plurality of predetermined locations along a beam path. The method may also comprise calculating an ion beam profile along the beam path based at least in part on the ion beam measurements at the plurality of predetermined locations. The method may further comprise determining a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.
摘要翻译：公开了一种用于离子注入机系统中均匀性调谐的技术。在一个特定的示例性实施例中，该技术可以被实现为用于离子注入机系统中的均匀性调谐的方法。该方法可以包括在沿着光束路径的多个预定位置处测量离子束。该方法还可以包括至少部分地基于多个预定位置处的离子束测量来计算沿着光束路径的离子束分布。该方法可以进一步包括至少部分地基于所计算的离子束分布来确定沿着光束路径的期望速度分布，使得当根据期望的速度分布扫描时，离子束沿着光束路径产生期望的离子束分布。

9. 发明申请

US20060249696A1 Technique for tuning an ion implanter system 有权
标题翻译：调整离子注入机系统的技术
公开(公告)号：US20060249696A1
公开(公告)日：2006-11-09
申请号：US11123082
申请日：2005-05-06
申请人： Shengwu Chang , Joseph Olson , Damian Brennan
发明人： Shengwu Chang , Joseph Olson , Damian Brennan
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/3023 , H01J2237/30411 , H01J2237/31703
摘要： A technique for tuning an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for tuning an ion implanter system having multiple beam-line elements. The method may comprise establishing one or more relationships among the multiple beam-line elements. The method may also comprise adjusting the multiple beam-line elements in a coordinated manner, based at least in part on the one or more established relationships, to produce a desired beam output.
摘要翻译：公开了一种用于调整离子注入机系统的技术。在一个特定的示例性实施例中，该技术可以被实现为用于调整具有多个光束线元件的离子注入系统的方法。该方法可以包括在多个波束线元件之间建立一个或多个关系。该方法还可以包括至少部分地基于一个或多个已建立的关系以协调的方式调整多个光束线元件以产生期望的光束输出。

10. 发明授权

US06690022B2 Ion beam incidence angle and beam divergence monitor 失效
标题翻译：离子束入射角和光束发散监测器
公开(公告)号：US06690022B2
公开(公告)日：2004-02-10
申请号：US10050636
申请日：2002-01-16
申请人： Grant Kenji Larsen , Ashwin Purohit , Robert A. Poitras , Morgan Evans , Damian Brennan
发明人： Grant Kenji Larsen , Ashwin Purohit , Robert A. Poitras , Morgan Evans , Damian Brennan
IPC分类号： H01J3708
CPC分类号： H01J37/304 , H01J37/3171
摘要： A device for measuring an incidence angle of an ion beam impinging a planar substrate includes an aperture plate having an aperture for intercepting the ion beam and passing a beam portion therethrough, and a sensor located in the substrate plane or a plane parallel thereto behind the aperture plate and having a length along which the beam portion impinges on the sensor at a location which is a function of the incidence angle of the ion beam, the sensor configured to produce a sensor signal indicative of the location of impingement of the beam portion on the sensor and representative of incidence angle. A computing unit may be configured to compare the sensor signal to a predetermined function for determining the incidence angle of the ion beam. Spaced apart sensing devices may be used to determine beam divergence.
摘要翻译：用于测量撞击平面基板的离子束的入射角的装置包括孔板，其具有用于拦截离子束并使梁部分穿过其的孔，以及位于基板平面中的传感器或与孔后面平行的平面板，并且具有长度，梁部分沿着该长度在离子束的入射角的函数的位置处撞击传感器，该传感器被配置为产生指示光束部分的撞击位置的传感器信号传感器和代表入射角。计算单元可以被配置为将传感器信号与用于确定离子束的入射角的预定函数进行比较。可以使用间隔开的感测装置来确定光束发散。

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