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1. 发明申请

US20070085037A1 Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation 有权
标题翻译：用于改善高倾斜离子注入中的掺杂均匀性的方法，系统和装置
公开(公告)号：US20070085037A1
公开(公告)日：2007-04-19
申请号：US11241406
申请日：2005-09-30
申请人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph Olson , Donna Smatlak , Damian Brennan , William Bintz
发明人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph Olson , Donna Smatlak , Damian Brennan , William Bintz
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/20207 , H01J2237/24405 , H01J2237/2446 , H01J2237/31703
摘要： The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.
摘要翻译：本发明提供了一种用于改善离子注入期间掺杂均匀性的方法，系统和装置，特别是在高倾斜离子注入期间。在一个实施例中，本发明提供了一种用于改善高倾斜离子注入中的掺杂均匀性的方法，所述方法包括以下步骤：沿垂直于离子束扫描平面的轴定位晶片，以形成晶片的表面之间的角度晶片和垂直于离子束的平面; 通过在与晶片表面基本共面的路径中移动电流检测器跨越离子束来测量离子束的电流; 以及基于测量步骤调整离子束电流的掺杂均匀性。

2. 发明申请

US20060169922A1 Ion implant ion beam parallelism and direction integrity determination and adjusting 审中-公开
标题翻译：离子注入离子束平行度和方向完整性确定和调整
公开(公告)号：US20060169922A1
公开(公告)日：2006-08-03
申请号：US11246410
申请日：2005-10-07
申请人： Shengwu Chang , Joseph Olson , Damian Brennan
发明人： Shengwu Chang , Joseph Olson , Damian Brennan
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/244 , H01J2237/31703
摘要： A system, method and program product for controlling parallelism and/or direction integrity of an ion beam generated by an ion implanter system are disclosed. The invention utilizes multiple faraday cups to measure a profile of at least a portion of the ion beam. The results of the measurement are then processed to determine parallelism and/or direction integrity of the ion beam. The results of the parallelism and/or direction integrity determination are then used to adjust the ion implanter system operating parameters to control parallelism and the direction of the ion beam.
摘要翻译：公开了一种用于控制由离子注入机系统产生的离子束的并行性和/或方向完整性的系统，方法和程序产品。本发明利用多个法拉第杯来测量离子束的至少一部分的轮廓。然后处理测量结果以确定离子束的平行度和/或方向完整性。然后使用平行度和/或方向完整性确定的结果来调整离子注入系统的操作参数以控制离子束的平行度和方向。

3. 发明申请

US20060284114A1 Technique for uniformity tuning in an ion implanter system 有权
标题翻译：离子注入机系统均匀性调整技术
公开(公告)号：US20060284114A1
公开(公告)日：2006-12-21
申请号：US11300425
申请日：2005-12-15
申请人： Joseph Olson , Jonathan England , Morgan Evans , Douglas Fielder , Gregg Norris , Shengwu Chang , Damian Brennan , William Callahan
发明人： Joseph Olson , Jonathan England , Morgan Evans , Douglas Fielder , Gregg Norris , Shengwu Chang , Damian Brennan , William Callahan
IPC分类号： H01J37/317
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/24542 , H01J2237/30483 , H01J2237/31703
摘要： A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.
摘要翻译：公开了一种用于离子注入机系统中均匀性调谐的技术。在一个特定的示例性实施例中，该技术可以被实现为用于离子束均匀性调谐的方法。该方法可以包括在离子注入机系统中产生离子束。该方法还可以包括调整离子注入系统中的一个或多个束线元件，以便当沿着光束路径扫描离子束时，减小离子束的束斑的变化。该方法还可以包括调整用于沿着光束路径扫描离子束的速度分布，使得离子束沿着光束路径产生基本均匀的离子束分布。

4. 发明申请

US20060266957A1 Technique for uniformity tuning in an ion implanter system 有权
标题翻译：离子注入机系统均匀性调整技术
公开(公告)号：US20060266957A1
公开(公告)日：2006-11-30
申请号：US11135307
申请日：2005-05-24
申请人： Shengwu Chang , Joseph Olson , Damian Brennan
发明人： Shengwu Chang , Joseph Olson , Damian Brennan
IPC分类号： H01J37/302
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/24542 , H01J2237/30483 , H01J2237/31703
摘要： A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a plurality of predetermined locations along a beam path. The method may also comprise calculating an ion beam profile along the beam path based at least in part on the ion beam measurements at the plurality of predetermined locations. The method may further comprise determining a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.
摘要翻译：公开了一种用于离子注入机系统中均匀性调谐的技术。在一个特定的示例性实施例中，该技术可以被实现为用于离子注入机系统中的均匀性调谐的方法。该方法可以包括在沿着光束路径的多个预定位置处测量离子束。该方法还可以包括至少部分地基于多个预定位置处的离子束测量来计算沿着光束路径的离子束分布。该方法可以进一步包括至少部分地基于所计算的离子束分布来确定沿着光束路径的期望速度分布，使得当根据期望的速度分布扫描时，离子束沿着光束路径产生期望的离子束分布。

5. 发明申请

US20060249696A1 Technique for tuning an ion implanter system 有权
标题翻译：调整离子注入机系统的技术
公开(公告)号：US20060249696A1
公开(公告)日：2006-11-09
申请号：US11123082
申请日：2005-05-06
申请人： Shengwu Chang , Joseph Olson , Damian Brennan
发明人： Shengwu Chang , Joseph Olson , Damian Brennan
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/3023 , H01J2237/30411 , H01J2237/31703
摘要： A technique for tuning an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for tuning an ion implanter system having multiple beam-line elements. The method may comprise establishing one or more relationships among the multiple beam-line elements. The method may also comprise adjusting the multiple beam-line elements in a coordinated manner, based at least in part on the one or more established relationships, to produce a desired beam output.
摘要翻译：公开了一种用于调整离子注入机系统的技术。在一个特定的示例性实施例中，该技术可以被实现为用于调整具有多个光束线元件的离子注入系统的方法。该方法可以包括在多个波束线元件之间建立一个或多个关系。该方法还可以包括至少部分地基于一个或多个已建立的关系以协调的方式调整多个光束线元件以产生期望的光束输出。

6. 发明申请

US20060076510A1 Ion beam implant current, spot width and position tuning 有权
标题翻译：离子束注入电流，光斑宽度和位置调整
公开(公告)号：US20060076510A1
公开(公告)日：2006-04-13
申请号：US10960904
申请日：2004-10-07
申请人： Shengwu Chang , Antonella Cucchetti , Joseph Dzengeleski , Gregory Gibilaro , Rosario Mollica , Gregg Norris , Joseph Olson , Marie Welsch
发明人： Shengwu Chang , Antonella Cucchetti , Joseph Dzengeleski , Gregory Gibilaro , Rosario Mollica , Gregg Norris , Joseph Olson , Marie Welsch
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/24542 , H01J2237/30461 , H01J2237/31703
摘要： An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.
摘要翻译：公开了用于调整离子注入机系统的离子束调谐方法，系统和程序产品。本发明通过例如扫描离子束通过植入室内的轮廓仪获得离子束的离子束轮廓; 并调整离子注入系统，以根据离子束轮廓最大化估计的注入电流，以同时优化总离子束电流和离子束斑点宽度，并最大化注入电流。此外，调谐还可以基于点光束中心的反馈沿着期望的离子束路径定位离子束，其通过减少离子束建立时间改善离子注入系统的生产率和性能，并为每个离子提供可重复的射束角度性能横跨许多设置。

7. 发明申请

US20060108543A1 WEAKENING FOCUSING EFFECT OF ACCELERATION-DECELERATION COLUMN OF ION IMPLANTER 有权
标题翻译：弱化加速离子注入柱的影响
公开(公告)号：US20060108543A1
公开(公告)日：2006-05-25
申请号：US10993346
申请日：2004-11-19
申请人： Shengwu Chang , Joseph Olson , Donald Anderson , Daniel McGillicuddy
发明人： Shengwu Chang , Joseph Olson , Donald Anderson , Daniel McGillicuddy
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/047 , H01J2237/12
摘要： A method and apparatus for weakening a strong focus effect of an acceleration-deceleration column of an ion implanter during a deceleration mode are disclosed. The apparatus includes a tube lens surrounding the ion beam adjacent to a deceleration lens of the acceleration-deceleration column. The tube lens causes a defocusing of the ion beam at the entrance of the tube lens, which reduces the ion dispersion problem generated by the column. The invention also includes an accel-decel column and ion implanter incorporating the tube lens. An additional deceleration-suppression electrode may also be added subsequent to the tube lens for confining electrons within the tube lens.
摘要翻译：公开了一种用于在减速模式期间减弱离子注入机的加速 - 减速列的强焦点效应的方法和装置。该装置包括围绕加速减速柱的减速透镜的离子束的管透镜。管透镜引起离子束在管透镜入口处的散焦，这降低了柱产生的离子色散问题。本发明还包括加速减速柱和并入管透镜的离子注入机。还可以在管透镜之后添加附加减速抑制电极，以将电子限制在管透镜内。

8. 发明申请

US20060169911A1 Electron confinement inside magent of ion implanter 有权
标题翻译：离子注入机内部的电子限制
公开(公告)号：US20060169911A1
公开(公告)日：2006-08-03
申请号：US11272193
申请日：2005-11-10
申请人： Anthony Renau , Joseph Olson , Shengwu Chang , James Buff
发明人： Anthony Renau , Joseph Olson , Shengwu Chang , James Buff
IPC分类号： H01J1/50
CPC分类号： H01J37/1475 , H01J37/026 , H01J37/3171 , H01J2237/0041 , H01J2237/0042 , H01J2237/055
摘要： A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.
摘要翻译：公开了一种用于通过将电子限制在其磁性区域内以减少电子损失并因此提高低能量束的传输效率来改进邻近离子注入机的磁体的空间电荷中和的方法和装置。提供了一种用于离子注入机的磁体的磁极构件，其包括具有与磁极构件相邻形成磁场浓度的多个磁场浓度构件的外表面。遇到这种增加的磁场的电子沿着相同的磁场线被击退，而不是允许逃逸。还提供了包括磁极的分析器磁体和离子注入机，从而实现了在离子注入机中提高低能量离子束空间电荷中和的方法。

9. 发明申请

US20060219954A1 Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control 有权
标题翻译：使用快速离子束控制的固定射束离子注入过程中毛刺恢复的方法和装置
公开(公告)号：US20060219954A1
公开(公告)日：2006-10-05
申请号：US11241894
申请日：2005-09-30
申请人： Russell Low , Joseph Olson , David Timberlake , James McLane , Mark Saunders , James Cummings , Thomas Callahan , Jonathan England
发明人： Russell Low , Joseph Olson , David Timberlake , James McLane , Mark Saunders , James Cummings , Thomas Callahan , Jonathan England
IPC分类号： H01J37/08 , G21K5/10
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/30455 , H01J2237/31761 , Y10S438/961
摘要： An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer. The operating parameter may be an output voltage of an extraction power supply, or other voltages and/or currents of beamline components that affect the path of the ion beam.
摘要翻译：离子注入机包括静止的平面离子束的源，一组束线分量，其通过由第一操作参数值确定的沿正常光束路径引导离子束;终端，其通过正常光束路径机械扫描晶片以及在注入期间响应于离子束中的毛刺的控制电路通过（1）立即将至少一个束线分量的操作参数改变为第二值，以将离子束引导离开正常光束路径，从而在晶片上的植入转变位置处停止植入，（2）随后将晶片移动到植入恢复位置，其中晶片上的注入转变位置直接位于离子束的正常路径上，并且（3）操作参数到其第一值以引导离子束沿着正常光束路径并在晶片上的注入转变位置处恢复离子注入。操作参数可以是提取电源的输出电压，或影响离子束路径的束线组件的其他电压和/或电流。

10. 发明申请

US20060208203A1 Technique for ion beam angle process control 有权
标题翻译：离子束角过程控制技术
公开(公告)号：US20060208203A1
公开(公告)日：2006-09-21
申请号：US11146064
申请日：2005-06-07
申请人： Atul Gupta , Joseph Olson
发明人： Atul Gupta , Joseph Olson
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01L21/26586 , H01J37/304 , H01J37/3171 , H01J2237/24528 , H01J2237/30455 , H01J2237/30472 , H01J2237/31703 , H01L29/66803 , H01L29/785
摘要： A technique for ion beam angle process control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle process control in an ion implanter system. The method may comprise directing one or more ion beams at a substrate surface. The method may also comprise determining an average spread of incident angles at which the one or more ion beams strike the substrate surface. The method may further comprise adjusting the one or more ion beams based at least in part on the average spread of incident angles to produce a desired spread of ion beam incident angles.
摘要翻译：公开了一种用于离子束角过程控制的技术。在一个特定的示例性实施例中，该技术可以被实现为离子注入机系统中的离子束角度过程控制的方法。该方法可以包括在衬底表面处引导一个或多个离子束。该方法还可以包括确定一个或多个离子束撞击衬底表面的入射角的平均扩展。该方法还可以包括至少部分地基于入射角的平均扩展来调整一个或多个离子束，以产生期望的离子束入射角的扩展。

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