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1. 发明申请

US20100110239A1 DARK CURRENTS AND REDUCING DEFECTS IN IMAGE SENSORS AND PHOTOVOLTAIC JUNCTIONS 有权
标题翻译：图像传感器和光电连接中的缺陷和减少缺陷
公开(公告)号：US20100110239A1
公开(公告)日：2010-05-06
申请号：US12607643
申请日：2009-10-28
申请人： Deepak Ramappa , Dennis Rodier
发明人： Deepak Ramappa , Dennis Rodier
IPC分类号： H04N9/64
CPC分类号： H01L27/14603 , H01L21/76237 , H01L27/14683 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Dark currents within a photosensitive device are reduced through improved implantation of a species during its fabrication. Dark currents can be caused by defects in the photo-diode device, caused during the annealing, implanting or other processing steps used during fabrication. By amorphizing the workpiece in the photo-diode region, the number of defects can be reduced thereby reducing this cause of dark current. Dark current is also caused by stress induced by an adjacent STI, where the stress caused by the liner and fill material exacerbate defects in the workpiece. By amorphizing the sidewalls and bottom surface of the trench, defects created during the etching process can be reduced. This reduction in defects also decreases dark current in the photosensitive device.
摘要翻译：通过在其制造过程中改进物种的植入，减少感光装置内的暗电流。暗电流可以由光电二极管器件中的缺陷引起，在退火，注入或制造期间使用的其他加工步骤期间引起。通过在光电二极管区域中对工件进行非晶化，可以减少缺陷的数量，从而减少这种暗电流的原因。暗电流也是由相邻STI引起的应力引起的，其中由衬垫和填充材料引起的应力加剧了工件的缺陷。通过使沟槽的侧壁和底表面非晶化，可以减少在蚀刻过程中产生的缺陷。这种缺陷的减少也降低了感光装置中的暗电流。

2. 发明申请

US20070085037A1 Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation 有权
标题翻译：用于改善高倾斜离子注入中的掺杂均匀性的方法，系统和装置
公开(公告)号：US20070085037A1
公开(公告)日：2007-04-19
申请号：US11241406
申请日：2005-09-30
申请人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph Olson , Donna Smatlak , Damian Brennan , William Bintz
发明人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph Olson , Donna Smatlak , Damian Brennan , William Bintz
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/20207 , H01J2237/24405 , H01J2237/2446 , H01J2237/31703
摘要： The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.
摘要翻译：本发明提供了一种用于改善离子注入期间掺杂均匀性的方法，系统和装置，特别是在高倾斜离子注入期间。在一个实施例中，本发明提供了一种用于改善高倾斜离子注入中的掺杂均匀性的方法，所述方法包括以下步骤：沿垂直于离子束扫描平面的轴定位晶片，以形成晶片的表面之间的角度晶片和垂直于离子束的平面; 通过在与晶片表面基本共面的路径中移动电流检测器跨越离子束来测量离子束的电流; 以及基于测量步骤调整离子束电流的掺杂均匀性。

3. 发明授权

US08815634B2 Dark currents and reducing defects in image sensors and photovoltaic junctions 有权
标题翻译：暗电流和减少图像传感器和光伏结的缺陷
公开(公告)号：US08815634B2
公开(公告)日：2014-08-26
申请号：US12607643
申请日：2009-10-28
申请人： Deepak Ramappa , Dennis Rodier
发明人： Deepak Ramappa , Dennis Rodier
IPC分类号： H01L21/00 , H01L21/425 , H01L27/146 , H01L31/18 , H01L21/762
CPC分类号： H01L27/14603 , H01L21/76237 , H01L27/14683 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Dark currents within a photosensitive device are reduced through improved implantation of a species during its fabrication. Dark currents can be caused by defects in the photo-diode device, caused during the annealing, implanting or other processing steps used during fabrication. By amorphizing the workpiece in the photo-diode region, the number of defects can be reduced thereby reducing this cause of dark current. Dark current is also caused by stress induced by an adjacent STI, where the stress caused by the liner and fill material exacerbate defects in the workpiece. By amorphizing the sidewalls and bottom surface of the trench, defects created during the etching process can be reduced. This reduction in defects also decreases dark current in the photosensitive device.
摘要翻译：通过在其制造过程中改进物种的植入，减少感光装置内的暗电流。暗电流可以由光电二极管器件中的缺陷引起，在退火，注入或制造期间使用的其他加工步骤期间引起。通过在光电二极管区域中对工件进行非晶化，可以减少缺陷的数量，从而减少这种暗电流的原因。暗电流也是由相邻STI引起的应力引起的，其中由衬垫和填充材料引起的应力加剧了工件的缺陷。通过使沟槽的侧壁和底表面非晶化，可以减少在蚀刻过程中产生的缺陷。这种缺陷的减少也降低了感光装置中的暗电流。

4. 发明授权

US08012843B2 Optimized halo or pocket cold implants 有权
标题翻译：优化的晕或口袋冷植入物
公开(公告)号：US08012843B2
公开(公告)日：2011-09-06
申请号：US12851141
申请日：2010-08-05
申请人： Christopher R. Hatem , Benjamin Colombeau , Thirumal Thanigaivelan , Kyu-Ha Shim , Dennis Rodier
发明人： Christopher R. Hatem , Benjamin Colombeau , Thirumal Thanigaivelan , Kyu-Ha Shim , Dennis Rodier
IPC分类号： H01L21/331
CPC分类号： H01L21/2236 , H01L21/265 , H01L21/26513 , H01L21/26586 , H01L29/1045 , H01L29/1083 , H01L29/665 , H01L29/6659
摘要： An improved method of performing pocket or halo implants is disclosed. The amount of damage and defects created by the halo implant degrades the performance of the semiconductor device, by increasing leakage current, decreasing the noise margin and increasing the minimum gate voltage. The halo or packet implant is performed at cold temperature, which decreases the damage caused to the crystalline structure and improves the amorphization of the crystal. The use of cold temperature also allows the use of lighter elements for the halo implant, such as boron or phosphorus.
摘要翻译：公开了一种执行口袋或晕轮植入物的改进方法。通过增加漏电流，降低噪声容限和增加最小栅极电压，由晕轮植入物造成的损伤和缺陷的量会降低半导体器件的性能。卤素或分组注入在冷温度下进行，这降低了对晶体结构的损害，并改善了晶体的非晶化。使用冷温度还允许使用较轻的元素用于卤素注入，例如硼或磷。

5. 发明申请

US20110033998A1 OPTIMIZED HALO OR POCKET COLD IMPLANTS 有权
标题翻译：优化的HALO或PORTET COLD IMPLANTS
公开(公告)号：US20110033998A1
公开(公告)日：2011-02-10
申请号：US12851141
申请日：2010-08-05
申请人： Christopher R. Hatem , Benjamin Colombeau , Thirumal Thanigaivelan , Kyu-Ha Shim , Dennis Rodier
发明人： Christopher R. Hatem , Benjamin Colombeau , Thirumal Thanigaivelan , Kyu-Ha Shim , Dennis Rodier
IPC分类号： H01L21/22
CPC分类号： H01L21/2236 , H01L21/265 , H01L21/26513 , H01L21/26586 , H01L29/1045 , H01L29/1083 , H01L29/665 , H01L29/6659
摘要： An improved method of performing pocket or halo implants is disclosed. The amount of damage and defects created by the halo implant degrades the performance of the semiconductor device, by increasing leakage current, decreasing the noise margin and increasing the minimum gate voltage. The halo or packet implant is performed at cold temperature, which decreases the damage caused to the crystalline structure and improves the amorphization of the crystal. The use of cold temperature also allows the use of lighter elements for the halo implant, such as boron or phosphorus.
摘要翻译：公开了一种执行口袋或晕轮植入物的改进方法。通过增加漏电流，降低噪声容限和增加最小栅极电压，由晕轮植入物造成的损伤和缺陷的量会降低半导体器件的性能。卤素或分组注入在冷温度下进行，这降低了对晶体结构的损害，并改善了晶体的非晶化。使用冷温度还允许使用较轻的元素用于卤素注入，例如硼或磷。

6. 发明授权

US07462844B2 Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation 有权
标题翻译：用于改善高倾斜离子注入中的掺杂均匀性的方法，系统和装置
公开(公告)号：US07462844B2
公开(公告)日：2008-12-09
申请号：US11241406
申请日：2005-09-30
申请人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph C. Olson , Donna Smatlak , Damian Brennan , William Bintz
发明人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph C. Olson , Donna Smatlak , Damian Brennan , William Bintz
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/20207 , H01J2237/24405 , H01J2237/2446 , H01J2237/31703
摘要： The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.
摘要翻译：本发明提供了一种用于改善离子注入期间掺杂均匀性的方法，系统和装置，特别是在高倾斜离子注入期间。在一个实施例中，本发明提供了一种用于改善高倾斜离子注入中的掺杂均匀性的方法，所述方法包括以下步骤：沿垂直于离子束扫描平面的轴定位晶片，以形成晶片的表面之间的角度晶片和垂直于离子束的平面; 通过在与晶片表面基本共面的路径中移动电流检测器跨越离子束来测量离子束的电流; 以及基于测量步骤调整离子束电流的掺杂均匀性。

7. 发明申请

US20060240651A1 Methods and apparatus for adjusting ion implant parameters for improved process control 审中-公开
标题翻译：用于调整离子注入参数以改进过程控制的方法和设备
公开(公告)号：US20060240651A1
公开(公告)日：2006-10-26
申请号：US11114593
申请日：2005-04-26
申请人： Anthony Renau , Dennis Rodier , Joseph Olson , Bret Adams
发明人： Anthony Renau , Dennis Rodier , Joseph Olson , Bret Adams
IPC分类号： H01L21/425
CPC分类号： H01L22/20
摘要： A method for processing a substrate, such as a semiconductor wafer, includes performing a measurement to determine a substrate parameter distribution to be compensated, determining an adjusted implant parameter distribution to compensate for the substrate parameter distribution, and implanting the substrate in accordance with the adjusted implant parameter distribution. The substrate parameter distribution to be compensated may result from another process step and may be uniform or non-uniform. In another embodiment, an implant parameter may be varied as a function of implant position on the substrate to achieve different substrate parameter values in different areas of the substrate.
摘要翻译：用于处理诸如半导体晶片的衬底的方法包括执行测量以确定要补偿的衬底参数分布，确定调整的植入参数分布以补偿衬底参数分布，以及根据所调整的衬底参数分布来植入衬底植入参数分布。要补偿的衬底参数分布可以由另一个工艺步骤产生，并且可以是均匀的或不均匀的。在另一个实施例中，植入参数可以作为衬底上的植入位置的函数而变化，以在衬底的不同区域中实现不同的衬底参数值。

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