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1. 发明申请

US20060207966A1 Method to improve ability to perform CMP-assisted liftoff for trackwidth definition 失效
标题翻译：提高执行CMP辅助提升能力的方法，用于跟踪宽度定义
公开(公告)号：US20060207966A1
公开(公告)日：2006-09-21
申请号：US11081222
申请日：2005-03-15
申请人： Shawn Hernandez , Wipul Jayasekara , Timothy Minvielle , Benjamin Wang , Howard Zolla
发明人： Shawn Hernandez , Wipul Jayasekara , Timothy Minvielle , Benjamin Wang , Howard Zolla
IPC分类号： B44C1/22
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B2005/3996 , Y10T29/26 , Y10T29/49028 , Y10T29/49044 , Y10T29/49052
摘要： A method is presented for fabricating a read head having a read head sensor and a hard bias/lead layer which includes depositing a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material is deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias/lead material is then deposited on the regions of sensor material and fast-milling dielectric material to form first and second leads and a cap on each of these regions. The cap of hard bias/lead material and the masking material is then removed from each of these regions.
摘要翻译：提出了一种用于制造具有读取头传感器和硬偏压/引线层的读取头的方法，该读取头传感器和硬偏置/引线层包括在传感器材料区域中沉积传感器材料条，以及在第一和第二快速接头中沉积快速铣削介电材料的条带，研磨与传感器材料区域相邻的介电材料区域。保护层和掩蔽材料层沉积在传感器材料条和快速铣削电介质材料条上，以提供掩蔽区域和暴露区域。提供成形源，例如离子铣削源，其形成暴露的区域。然后将硬偏置/引线材料沉积在传感器材料和快速研磨电介质材料的区域上，以在这些区域中的每一个上形成第一和第二引线和盖。然后从这些区域中的每一个去除硬偏压/铅材料的盖和掩模材料。

2. 发明申请

US20060256482A1 Method to fabricate side shields for a magnetic sensor 失效
公开(公告)号：US20060256482A1
公开(公告)日：2006-11-16
申请号：US11126508
申请日：2005-05-10
申请人： Satoru Araki , Robert Beach , Marie-Claire Cyrille , Wipul Jayasekara , Quang Le , Jui-Lung Li , David Seagle , Howard Zolla
发明人： Satoru Araki , Robert Beach , Marie-Claire Cyrille , Wipul Jayasekara , Quang Le , Jui-Lung Li , David Seagle , Howard Zolla
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , G11B5/112 , G11B5/3169 , G11B5/3906 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046
摘要： A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.

3. 发明申请

US20050063101A1 Ion bombardment of electrical lapping guides to decrease noise during lapping process 失效
标题翻译：离子轰击电气研磨导轨，以减少研磨过程中的噪音
公开(公告)号：US20050063101A1
公开(公告)日：2005-03-24
申请号：US10964123
申请日：2004-10-12
申请人： Mark Church , Wipul Jayasekara , Howard Zolla
发明人： Mark Church , Wipul Jayasekara , Howard Zolla
IPC分类号： G11B5/39 , B24B37/04 , G11B5/33 , G11B5/127
CPC分类号： B24B37/042 , Y10T29/49034 , Y10T29/49046 , Y10T29/49048
摘要： A method for reducing noise in a lapping guide. Selected portions of a Giant magnetoresistive device wafer are masked, thereby defining masked and unmasked regions of the wafer in which the unmasked regions include lapping guides. The wafer is bombarded with ions such that a Giant magnetoresistive effect of the unmasked regions is reduced. The GMR device is lapped, using the lapping guides to measure an extent of the lapping
摘要翻译：一种降低研磨导轨中噪音的方法。掩蔽了巨型磁阻器件晶片的选定部分，由此限定晶片的掩蔽和未掩模区域，其中未掩蔽区域包括研磨引导件。用离子轰击晶片，使得未掩蔽区域的巨磁阻效应降低。研磨GMR装置，使用研磨导轨测量研磨的程度

4. 发明申请

US20070076328A1 Magnetic recording head with ESD shunt trace 失效
标题翻译：具有ESD分路迹线的磁记录头
公开(公告)号：US20070076328A1
公开(公告)日：2007-04-05
申请号：US11240542
申请日：2005-09-30
申请人： Wipul Jayasekara , Howard Zolla
发明人： Wipul Jayasekara , Howard Zolla
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/40 , G11B5/11 , G11B5/3133
摘要： Recording heads having an ESD shunt trace and methods of fabricating the same are disclosed. A recording head of the invention includes a first shield, a second shield, an MR read element between the first shield and the second shield, and an ESD shunt trace. The ESD shunt trace is formed from MR layers and is connected to the MR read element and one or both of the first shield and the second shield. One or more of the MR layers forming the ESD shunt trace are processed to reduce the MR properties of the ESD shunt trace. Examples of processing the ESD shunt trace are ion milling, ion implantation, oxidizing, reactive ion etching, sputter etching, wet chemical etching, etc.
摘要翻译：公开了具有ESD分流迹线的记录头及其制造方法。本发明的记录头包括第一屏蔽，第二屏蔽，第一屏蔽和第二屏蔽之间的MR读取元件以及ESD分流迹线。 ESD分路迹线由MR层形成，并连接到MR读取元件以及第一屏蔽和第二屏蔽中的一个或两个。处理形成ESD分流迹线的一个或多个MR层以降低ESD分流迹线的MR特性。处理ESD分流迹线的示例是离子铣削，离子注入，氧化，反应离子蚀刻，溅射蚀刻，湿化学蚀刻等。

5. 发明申请

US20060215313A1 Method for using CVD process to encapsulate coil in a magnetic write head 失效
标题翻译：使用CVD工艺将线圈封装在磁写头中的方法
公开(公告)号：US20060215313A1
公开(公告)日：2006-09-28
申请号：US11090457
申请日：2005-03-25
申请人： Richard Hsiao , Wipul Jayasekara , Howard Zolla
发明人： Richard Hsiao , Wipul Jayasekara , Howard Zolla
IPC分类号： G11B5/127
CPC分类号： G11B5/3133 , G11B5/17 , G11B5/3136 , G11B5/3163 , Y10T29/49041 , Y10T29/4906 , Y10T29/49064
摘要： Applicant discloses a method for fabricating a magnetic write head with a coil with a high aspect ratio using a Chemical Vapor Deposition process such as Atomic Layer Deposition (ALD), High Speed ALD, Plasma Enhanced ALD (PEALD), Plasma Enhanced Chemical Vapor Deposition (PECVD) or Low Pressure Chemical Vapor Deposition (LPCVD) to form encapsulating films over the coils without voids. Materials which can be used for encapsulation include Al2O3, SiO2, AlN, Ta2O5, HfO2, ZrO2, and YtO3. The use of an ultra-conformal deposition process allows the pitch of the coils to be smaller than it is possible in the prior art. The method according to the invention also allows materials with a smaller coefficient of thermal expansion than hardbake photoresist to be used with resulting improvements in thermal protrusion characteristics.
摘要翻译：申请人公开了使用诸如原子层沉积（ALD），高速ALD，等离子体增强型ALD（PEALD），等离子体增强化学气相沉积（Plasma Enhanced Chemical Vapor Deposition，等离子体增强化学气相沉积法）等化学气相沉积工艺制造具有高纵横比的线圈的磁写头的方法 PECVD）或低压化学气相沉积（LPCVD），在无空隙的线圈上形成封装膜。可用于封装的材料包括Al 2 O 3，SiO 2，AlN，Ta 2 O， 5，HfO 2，ZrO 2和YtO 3。使用超适形沉积工艺允许线圈的间距小于现有技术中可能的间距。根据本发明的方法还允许使用具有比硬质光刻胶更小的热膨胀系数的材料，从而提高热突起特性。

6. 发明申请

US20080020240A1 Method to reduce corner shunting during fabrication of CPP read heads 有权
标题翻译：在CPP读取头制造过程中减少拐角分流的方法
公开(公告)号：US20080020240A1
公开(公告)日：2008-01-24
申请号：US11890868
申请日：2007-08-07
申请人： Robert Fontana , Ying Hong , Wipul Jayasekara , Howard Zolla
发明人： Robert Fontana , Ying Hong , Wipul Jayasekara , Howard Zolla
IPC分类号： G11B5/33 , B05D5/12 , C23F1/04
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T428/1171
摘要： A method is presented for fabricating a CPP read head having a CPP read head sensor and a hard bias layer which includes forming a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material are deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias material is then deposited on the regions of sensor material and fast-milling dielectric material to form caps on each of these regions. The caps of hard bias material and the masking material are then removed from each of these regions.
摘要翻译：提出了一种用于制造具有CPP读取头传感器和硬偏置层的CPP读取头的方法，该CPP读取头包括在传感器材料区域中形成传感器材料条，以及将快速研磨电介质材料的条带放置在第一和第二快速接头中，研磨与传感器材料区域相邻的介电材料区域。保护层和掩蔽材料层沉积在传感器材料条和快速研磨电介质材料条上，以提供掩蔽区域和暴露区域。提供成形源，例如离子铣削源，其形成暴露的区域。然后将硬偏置材料沉积在传感器材料和快速研磨电介质材料的区域上，以在这些区域中的每一个上形成盖。然后从这些区域中的每一个去除硬偏置材料的盖子和掩模材料。

7. 发明申请

US20060027528A1 Ion bombardment of electrical lapping guides to decrease noise during lapping process 失效
标题翻译：离子轰击电气研磨导轨，以减少研磨过程中的噪音
公开(公告)号：US20060027528A1
公开(公告)日：2006-02-09
申请号：US11246727
申请日：2005-10-06
申请人： Mark Church , Wipul Jayasekara , Howard Zolla
发明人： Mark Church , Wipul Jayasekara , Howard Zolla
IPC分类号： B44C1/22 , C23F1/00
CPC分类号： B24B37/042 , Y10T29/49034 , Y10T29/49046 , Y10T29/49048
摘要： A method for reducing noise in a lapping guide. Selected portions of a magnetoresistive device wafer are bombarded with ions such that a magnetoresistive effect of lapping guides is reduced. The device is lapped, using the lapping guides to measure an extent of the lapping
摘要翻译：一种降低研磨导轨中噪音的方法。用离子轰击磁阻器件晶片的选定部分，使得研磨导轨的磁阻效应降低。研磨装置，使用研磨导轨测量研磨的程度

8. 发明申请

US20050045580A1 Method of fabricating electronic component using resist structure with no undercut 有权
标题翻译：使用没有底切的抗蚀剂结构制造电子部件的方法
公开(公告)号：US20050045580A1
公开(公告)日：2005-03-03
申请号：US10652053
申请日：2003-08-29
申请人： Amanda Baer , Marie-Claire Cyrille , Frederick Dill , Wipul Jayasekara , Jui-Lung Li , Hugo Santini , Benjamin Wang
发明人： Amanda Baer , Marie-Claire Cyrille , Frederick Dill , Wipul Jayasekara , Jui-Lung Li , Hugo Santini , Benjamin Wang
IPC分类号： G11B5/31 , G11B5/39 , B44C1/22
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H01J2237/3114
摘要： A method for milling a structure. A single- or multi-layer resist having no undercut is added to a surface of a structure to be milled, the surface to be milled defining a plane. A milling process, such as ion milling, is performed. The milling process includes milling the structure at high incidence and milling the structure at razing incidence. The milling process can be performed only once, or repeated multiple times. High incidence can be defined as about 65 to about 90 degrees from the plane of the surface being milled. Razing incidence can be defined as about 0 to about 30 degrees from the plane of the surface being milled.
摘要翻译：一种铣削结构的方法。将未切割的单层或多层抗蚀剂加入要研磨的结构的表面，待研磨的表面限定一个平面。进行铣削加工，例如离子铣削。铣削过程包括以高发射率铣削结构并铣削结构。铣削加工只能执行一次，或重复多次。可以将高入射率定义为从被研磨表面的平面约65度至约90度。闪电发生率可以定义为距被研磨表面的平面约0至约30度。

9. 发明申请

US20070188939A1 Tunnel MR head with long stripe height sensor stabilized through the shield 有权
标题翻译：隧道MR头，长条纹高度传感器通过屏蔽稳定
公开(公告)号：US20070188939A1
公开(公告)日：2007-08-16
申请号：US11352491
申请日：2006-02-10
申请人： Robert Beach , Wipul Jayasekara , Vladimir Nikitin
发明人： Robert Beach , Wipul Jayasekara , Vladimir Nikitin
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/40
摘要： In a CPP MR device such as a tunnel magnetoresistive (TMR) device, shoulders that have a magnetic moment that is matched to the magnetic moments of the free layer extend between the free layer and the S2 shield to provide an electrical path from one shoulder, through the shield, to the other shoulder for dissipating edge charges. Thus, a CPP MR device may include a seed stack, a pinned stack on the seed stack, and a tunnel barrier on the pinned stack. A free stack may be on the tunnel barrier, and the free stack can include a free sublayer separated from a magnetic shield and a path for dissipating edge charges in the free stack through the magnetic shield.
摘要翻译：在诸如隧道磁阻（TMR）器件的CPP MR器件中，具有与自由层的磁矩匹配的磁矩的肩部在自由层和S 2屏蔽之间延伸以提供从一个肩部，通过屏蔽，到另一肩，消散边缘电荷。因此，CPP MR装置可以包括种子堆叠，种子堆叠上的钉扎堆叠以及钉扎堆叠上的隧道势垒。自由堆叠可以在隧道屏障上，并且自由堆叠可以包括与磁屏蔽分离的自由子层和用于通过磁屏蔽消散自由堆叠中的边缘电荷的路径。

10. 发明授权

US07123455B2 Magnetic tunnel junction sensor with insulating antiferromagnetic material extending from free layer extensions to electrically conductive lead 失效
标题翻译：具有绝缘反铁磁材料的磁性隧道结传感器，从自由层延伸延伸到导电引线
公开(公告)号：US07123455B2
公开(公告)日：2006-10-17
申请号：US10622033
申请日：2003-07-16
申请人： Wipul Jayasekara
发明人： Wipul Jayasekara
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A magnetic tunnel junction (MTJ) sensor in which the free layer longitudinal biasing elements are coupled, without insulation, to the free layer outside of the MTJ stack to provide reliable non-shunting MTJ free layer stabilization without extremely thin dielectric layers. In one embodiment, hard magnetic (HM) layers are disposed in contact with the free layer outside of and separated from the MTJ stack active region by a thick dielectric layer. In another embodiment, antiferromagnetic (AFM) bias layers are disposed in contact with the free layer outside of and separated from the MTJ stack active region by a thick dielectric layer. In other embodiments, nonconductive HM layers are disposed either in contact with the free layer outside of the MTJ stack active region and/or in abutting contact with the MTJ stack active region.
摘要翻译：一种磁性隧道结（MTJ）传感器，其中自由层纵向偏置元件无需绝缘地连接到MTJ堆叠之外的自由层，以提供可靠的非分流MTJ自由层稳定性，而无需极薄的电介质层。在一个实施例中，硬磁（HM）层被设置成与厚电介质层在MTJ叠层有源区之外的自由层接触。在另一个实施例中，反铁磁（AFM）偏置层设置成与厚电介质层在MTJ堆叠有源区之外的自由层接触。在其它实施例中，非导电HM层设置为与MTJ堆叠有源区域外部的自由层接触和/或与MTJ堆叠有源区域邻接接触。

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