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1. 发明申请

US20080242033A1 Self-Aligned LDMOS Fabrication Method Integrated Deep-Sub-Micron VLSI Process, Using A Self-Aligned Lithography Etches And Implant Process 有权
标题翻译：自对准LDMOS制造方法集成深亚微米VLSI工艺，使用自对准平版印刷刻蚀和植入工艺
公开(公告)号：US20080242033A1
公开(公告)日：2008-10-02
申请号：US11691459
申请日：2007-03-26
申请人： Sharon Levin , Ira Naot , Alexei Heiman
发明人： Sharon Levin , Ira Naot , Alexei Heiman
IPC分类号： H01L21/336
CPC分类号： H01L29/7816 , H01L21/26586 , H01L21/823807 , H01L21/823828 , H01L27/0922 , H01L29/0653 , H01L29/086 , H01L29/0869 , H01L29/665 , H01L29/66659 , H01L29/66689 , H01L29/7835
摘要： An integrated circuit includes both LDMOS devices and one or more low-power CMOS devices that are concurrently formed on a substrate using a deep sub-micron VLSI fabrication process. The LDMOS polycrystalline silicon (polysilicon) gate structure is patterned using a two-mask etching process. The first etch mask is used to define a first edge of the gate structure located away from the deep body/drain implant. The second etch mask is then used to define a second edge of the gate structure, and the second etch mask is then retained on the gate structure during subsequent formation of the deep body/drain implant. After the deep implant, shallow implants and metallization are formed to complete the LDMOS device.
摘要翻译：集成电路包括LDMOS器件和使用深亚微米VLSI制造工艺同时形成在衬底上的一个或多个低功率CMOS器件。使用双掩模蚀刻工艺对LDMOS多晶硅（多晶硅）栅极结构进行构图。第一蚀刻掩模用于限定远离深体/排出植入物的栅极结构的第一边缘。然后使用第二蚀刻掩模来限定栅极结构的第二边缘，并且随后形成深体/漏极植入物，第二蚀刻掩模然后被保持在栅极结构上。在深入植入后，形成浅的植入物和金属化以完成LDMOS器件。

2. 发明授权

US07575977B2 Self-aligned LDMOS fabrication method integrated deep-sub-micron VLSI process, using a self-aligned lithography etches and implant process 有权
标题翻译：自对准LDMOS制造方法集成深亚微米VLSI工艺，使用自对准光刻蚀刻和注入工艺
公开(公告)号：US07575977B2
公开(公告)日：2009-08-18
申请号：US11691459
申请日：2007-03-26
申请人： Sharon Levin , Ira Naot , Alexei Heiman
发明人： Sharon Levin , Ira Naot , Alexei Heiman
IPC分类号： H01L21/336
CPC分类号： H01L29/7816 , H01L21/26586 , H01L21/823807 , H01L21/823828 , H01L27/0922 , H01L29/0653 , H01L29/086 , H01L29/0869 , H01L29/665 , H01L29/66659 , H01L29/66689 , H01L29/7835
摘要： An integrated circuit includes both LDMOS devices and one or more low-power CMOS devices that are concurrently formed on a substrate using a deep sub-micron VLSI fabrication process. The LDMOS polycrystalline silicon (polysilicon) gate structure is patterned using a two-mask etching process. The first etch mask is used to define a first edge of the gate structure located away from the deep body/drain implant. The second etch mask is then used to define a second edge of the gate structure, and the second etch mask is then retained on the gate structure during subsequent formation of the deep body/drain implant. After the deep implant, shallow implants and metallization are formed to complete the LDMOS device.
摘要翻译：集成电路包括LDMOS器件和使用深亚微米VLSI制造工艺同时形成在衬底上的一个或多个低功率CMOS器件。使用双掩模蚀刻工艺对LDMOS多晶硅（多晶硅）栅极结构进行构图。第一蚀刻掩模用于限定远离深体/排出植入物的栅极结构的第一边缘。然后使用第二蚀刻掩模来限定栅极结构的第二边缘，并且随后形成深体/漏极植入物，第二蚀刻掩模然后被保持在栅极结构上。在深入植入后，形成浅的植入物和金属化以完成LDMOS器件。

3. 发明申请

US20080121808A1 High Resolution Integrated X-Ray CMOS Image Sensor 有权
标题翻译：高分辨率集成X射线CMOS图像传感器
公开(公告)号：US20080121808A1
公开(公告)日：2008-05-29
申请号：US11563129
申请日：2006-11-24
申请人： Yakov Roizin , Amos Fenigstein , Avi Strum , Alexei Heiman , Doron Pardess
发明人： Yakov Roizin , Amos Fenigstein , Avi Strum , Alexei Heiman , Doron Pardess
IPC分类号： G01T1/24
CPC分类号： G01T1/2018
摘要： An X-ray image sensor having scintillating material embedded into wave-guide structures fabricated in a CMOS image sensor (CIS). After the CIS has been fabricated, openings (deep pores) are formed in the back side of the CIS wafer. These openings terminate at a distance of about 1 to 5 microns below the upper silicon surface of the wafer. The depth of these openings can be controlled by stopping on a buried insulating layer, or by stopping on an epitaxial silicon layer having a distinctive doping concentration. The openings are aligned with corresponding photodiodes of the CIS. The openings may have a shape that narrows as approaching the photodiodes. A thin layer of a reflective material may be formed on the sidewalls of the openings, thereby improving the efficiency of the resulting waveguide structures. Scintillating material (e.g., CsI(Tl)) is introduced into the openings using a ForceFill™ technology or by mechanical pressing.
摘要翻译：具有嵌入在CMOS图像传感器（CIS）中制造的波导结构中的闪烁材料的X射线图像传感器。在CIS制造之后，在CIS晶片的背面形成开口（深孔）。这些开口终止于晶片的上硅表面下方约1至5微米的距离处。这些开口的深度可以通过停止在掩埋绝缘层上，或者通过停止在具有不同掺杂浓度的外延硅层上来控制。开口与CIS的相应光电二极管对准。开口可以具有随着接近光电二极管而变窄的形状。可以在开口的侧壁上形成薄层反射材料，从而提高所得波导结构的效率。使用ForceFill TM技术或通过机械压制将闪烁材料（例如，CsI（T1））引入到开口中。

4. 发明授权

US07608837B2 High resolution integrated X-ray CMOS image sensor 有权
标题翻译：高分辨率集成X射线CMOS图像传感器
公开(公告)号：US07608837B2
公开(公告)日：2009-10-27
申请号：US11563129
申请日：2006-11-24
申请人： Yakov Roizin , Amos Fenigstein , Avi Strum , Alexei Heiman , Doron Pardess
发明人： Yakov Roizin , Amos Fenigstein , Avi Strum , Alexei Heiman , Doron Pardess
IPC分类号： G01T1/24
CPC分类号： G01T1/2018
摘要： An X-ray image sensor having scintillating material embedded into wave-guide structures fabricated in a CMOS image sensor (CIS). After the CIS has been fabricated, openings (deep pores) are formed in the back side of the CIS wafer. These openings terminate at a distance of about 1 to 5 microns below the upper silicon surface of the wafer. The depth of these openings can be controlled by stopping on a buried insulating layer, or by stopping on an epitaxial silicon layer having a distinctive doping concentration. The openings are aligned with corresponding photodiodes of the CIS. The openings may have a shape that narrows as approaching the photodiodes. A thin layer of a reflective material may be formed on the sidewalls of the openings, thereby improving the efficiency of the resulting waveguide structures. Scintillating material (e.g., CsI(Tl)) is introduced into the openings using a ForceFill™ technology or by mechanical pressing.
摘要翻译：具有嵌入在CMOS图像传感器（CIS）中制造的波导结构中的闪烁材料的X射线图像传感器。在CIS制造之后，在CIS晶片的背面形成开口（深孔）。这些开口终止于晶片的上硅表面下方约1至5微米的距离处。这些开口的深度可以通过停止在掩埋绝缘层上，或者通过停止在具有不同掺杂浓度的外延硅层上来控制。开口与CIS的相应光电二极管对准。开口可以具有随着接近光电二极管而变窄的形状。可以在开口的侧壁上形成薄层反射材料，从而提高所得波导结构的效率。使用ForceFill TM技术或通过机械压制将闪烁材料（例如，CsI（T1））引入到开口中。

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