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1. 发明申请

US20060231854A1 Flip chip type nitride semiconductor light emitting device 有权
标题翻译：倒装芯片型氮化物半导体发光器件
公开(公告)号：US20060231854A1
公开(公告)日：2006-10-19
申请号：US11319343
申请日：2005-12-28
申请人： Seung Chae , Suk Yoon , Kun Ko , Hyun Shim , Bong Yi
发明人： Seung Chae , Suk Yoon , Kun Ko , Hyun Shim , Bong Yi
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42
摘要： The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.
摘要翻译：本发明涉及具有p型和n型氮化物半导体层的倒装芯片型氮化物半导体发光器件及其间的有源层。本发明还具有形成在p型氮化物半导体层上的欧姆接触层，形成在欧姆接触层上的透光性导电氧化物层和形成在透光性导电氧化物层上的高反射金属层。

2. 发明申请

US20060220057A1 Group III-nitride light emitting device 失效
标题翻译： III族氮化物发光器件
公开(公告)号：US20060220057A1
公开(公告)日：2006-10-05
申请号：US11315150
申请日：2005-12-23
申请人： Hyun Shim , Suk Yoon , Jae Ro , Seung Chae
发明人： Hyun Shim , Suk Yoon , Jae Ro , Seung Chae
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.
摘要翻译：本发明提供了具有改进的外部量子效率和亮度的III族氮化物发光器件。发光器件包括依次形成的n型覆盖层，有源层和p型覆盖层。此外，在p型覆盖层上形成p电极，其中p电极包括CuInO 2层，透明导电氧化物层和顺序地形成在p型上的反射金属层包层反射金属层可以是Ag层或Al层。

3. 发明申请

US20050224811A1 Gallium nitride (GaN)-based semiconductor light emitting diode and method for manufacturing the same 失效
标题翻译：基于氮化镓（GaN）的半导体发光二极管及其制造方法
公开(公告)号：US20050224811A1
公开(公告)日：2005-10-13
申请号：US10811808
申请日：2004-03-30
申请人： Seung Chae , Suk Yoon
发明人： Seung Chae , Suk Yoon
IPC分类号： H01L27/15 , H01L33/06 , H01L33/30 , H01L33/42
CPC分类号： H01L33/14 , H01L33/32 , H01L33/40
摘要： Disclosed are a GaN-based semiconductor light emitting diode and a method for manufacturing the same. The GaN-based semiconductor light emitting diode includes a substrate on which a GaN-based semiconductor material is grown; a lower clad layer formed on the substrate, and made of a first conductive GaN semiconductor material; an active layer formed on a designated portion of the lower clad layer, and made of an undoped GaN semiconductor material; an upper clad layer formed on the active layer, and made of a second conductive GaN semiconductor material; an alloy layer formed on the upper clad layer, and made of an alloy selected from the group consisting of La-based alloys and Ni-based alloys; and an TCO layer formed on the alloy layer. The alloy layer has a high transmittance and forms Ohmic contact, thus reducing a contact resistance.
摘要翻译：公开了一种GaN基半导体发光二极管及其制造方法。 GaN基半导体发光二极管包括其上生长GaN基半导体材料的衬底; 形成在所述基板上并由第一导电GaN半导体材料制成的下包层; 形成在下包层的指定部分上并由未掺杂的GaN半导体材料制成的有源层; 形成在所述有源层上并由第二导电GaN半导体材料制成的上覆层; 合金层，形成在上包层上，由选自由La基合金和Ni基合金组成的组合物制成; 和在合金层上形成的TCO层。合金层具有高透光率，形成欧姆接触，从而降低接触电阻。

4. 发明申请

US20070254394A1 Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same 失效
公开(公告)号：US20070254394A1
公开(公告)日：2007-11-01
申请号：US11812868
申请日：2007-06-22
申请人： Jun Seo , Suk Yoon , Seung Chae
发明人： Jun Seo , Suk Yoon , Seung Chae
IPC分类号： H01L21/00
CPC分类号： H01L33/04 , H01L27/0248 , H01L27/15 , H01L33/32 , H01L33/38 , H01L33/44 , H01L2933/0016
摘要： A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.

5. 发明申请

US20060157718A1 Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same 有权
标题翻译：具有ESD保护能力的氮化镓系发光器件及其制造方法
公开(公告)号：US20060157718A1
公开(公告)日：2006-07-20
申请号：US11220844
申请日：2005-09-08
申请人： Jun Seo , Suk Yoon , Seung Chae
发明人： Jun Seo , Suk Yoon , Seung Chae
IPC分类号： H01L31/12 , H01L27/15
CPC分类号： H01L33/04 , H01L27/0248 , H01L27/15 , H01L33/32 , H01L33/38 , H01L33/44 , H01L2933/0016
摘要： A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.
摘要翻译：公开了一种氮化镓基发光器件及其制造方法。发光器件包括依次层叠在衬底上的n型GaN基覆盖层，有源层，p型GaN基覆盖层和p侧电极。该器件还包括形成在n型GaN基覆盖层的一个区域上的n侧电极和形成在n型GaN基覆盖层的其它区域上的两个或更多个MIM型隧道结。每个MIM型隧道结包括形成在GaN基覆层上的下金属层，以便接触n型GaN基覆层，形成在下金属层上的绝缘膜和形成的上金属层在绝缘膜上。该器件可防止反向ESD电压，从而可以提高对反向ESD电压的容限，从而提高器件的可靠性。

6. 发明申请

US20060219999A1 Group III-nitride light emitting device 有权
标题翻译： III族氮化物发光器件
公开(公告)号：US20060219999A1
公开(公告)日：2006-10-05
申请号：US11313967
申请日：2005-12-22
申请人： Hyun Shim , Suk Yoon , Joong Kang , Jong Won
发明人： Hyun Shim , Suk Yoon , Joong Kang , Jong Won
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L33/14 , H01L33/32 , H01S5/22 , H01S5/305 , H01S5/3213 , H01S5/3216 , H01S5/32341 , H01S2301/173
摘要： The present invention provides a group III-nitride light emitting device improved in operating voltage and electrostatic discharge characteristics. The group III-nitride light emitting device comprises a lower n-type clad layer, a current spreading layer, an upper n-type clad layer, an active layer and an p-type clad layer formed in their order on a substrate. The current spreading layer includes a SiC layer.
摘要翻译：本发明提供了改善工作电压和静电放电特性的III族氮化物发光器件。 III族氮化物发光器件包括在衬底上依次形成的下n型覆盖层，电流扩展层，上n型覆盖层，有源层和p型覆盖层。电流扩展层包括SiC层。

7. 发明申请

US20080089297A1 METHOD FOR TRANSMITTING AND RECEIVING A SIGNAL TO PROTECT AGAINST ERRONEOUS FEEDBACK INFORMATION 有权
标题翻译：用于发送和接收信号以防止发生错误的反馈信息的方法
公开(公告)号：US20080089297A1
公开(公告)日：2008-04-17
申请号：US11840867
申请日：2007-08-17
申请人： Dong Seo , Bong Kim , Young Yun , Ki Kim , Jung Lee , Eun Kim , Hak Kim , Suk Yoon , Joon Ahn
发明人： Dong Seo , Bong Kim , Young Yun , Ki Kim , Jung Lee , Eun Kim , Hak Kim , Suk Yoon , Joon Ahn
IPC分类号： G06F3/00
CPC分类号： H04B7/0652 , H04B7/0413 , H04B7/0634 , H04B7/0665 , H04W72/042
摘要： A method for providing precoding weights for data symbols of data control subframes includes generating a downlink frame having control subframes which individually correspond to one of a plurality of downlink data subframes, and inserting weight information into each of the control subframes, such that the weight information is to be applied to data symbols present in the corresponding one of the data subframes. The method further includes transmitting the control subframes and the inserted weight information to a receiving device.
摘要翻译：一种为数据控制子帧的数据符号提供预编码权重的方法，包括生成具有与多个下行链路数据子帧中的一个对应的控制子帧的下行链路帧，以及将权重信息插入到每个控制子帧中，使得权重信息将被应用于存在于相应一个数据子帧中的数据符号。该方法还包括将控制子帧和插入的权重信息发送到接收设备。

8. 发明申请

US20060204159A1 Self-locking structure of split roller bearing cage 有权
标题翻译：分体滚子轴承保持架的自锁结构
公开(公告)号：US20060204159A1
公开(公告)日：2006-09-14
申请号：US11180517
申请日：2005-07-14
申请人： Suk Yoon
发明人： Suk Yoon
IPC分类号： F16C33/46 , F16C33/48
CPC分类号： F16C33/504 , F16C19/26 , F16C33/4617 , F16C2226/74
摘要： A self-locking structure of a split roller bearing cage includes recesses, locker plates and locking projections. The recesses are defined in outer circumferential surfaces of opposite joint ends of two semicircular split roller bearing cage half-parts along horizontally inscribed tangential lines, that meet an outer circumference of the annular split roller bearing cage and intersect perpendicular with a split center axis of the annular split roller bearing cage. Recesses have widths and depths suitable to receive locker plates. The locker plates are horizontally attached to bottoms of the recesses defined in opposite joint ends of one of the cage half-parts. Locking projections are formed at bottoms of other recesses defined in opposite joint ends of the other cage half-parts to be coupled with respective locker plates. The two cage half-parts are aligned and engaged at their joint ends, forming a full circle. The locker plates can be automatically coupled to the locking projections.
摘要翻译：分离滚子轴承保持架的自锁结构包括凹槽，储物柜和锁定突起。凹槽被限定在沿着水平内切切线的两个半圆形分离滚子轴承保持器半部的相对接合端的外圆周表面中，其与环形分隔滚子轴承保持架的外周相交并且垂直于环形分离滚子轴承保持架。凹槽具有适合接收储物柜的宽度和深度。储物柜水平地附接到限定在笼半部分之一的相对接合端部中的凹部的底部。锁定突起形成在限定在另一个半壳体的相对接合端部中的其它凹部的底部，以与相应的更换板联接。两个笼半部分在其接合端对齐并接合，形成一个整圆。储物柜可以自动地联接到锁定突起。

9. 发明申请

US20050108615A1 Transmission power control apparatus in wireless communication system and method therefor 有权
标题翻译：无线通信系统中的发射功率控制装置及其方法
公开(公告)号：US20050108615A1
公开(公告)日：2005-05-19
申请号：US10987869
申请日：2004-11-12
申请人： Jong An , Ki Kim , Young Yun , Soon Kwon , Chan Kyung , Suk Yoon
发明人： Jong An , Ki Kim , Young Yun , Soon Kwon , Chan Kyung , Suk Yoon
IPC分类号： H04B7/26 , H04B7/005 , H03M13/00
CPC分类号： H04W52/16 , H04W52/50
摘要： The present invention provides an apparatus and method for controlling transmission powers of R-CQICH (reverse-channel quality indicator channel) and R-ACKCH (reverse-acknowledgment channel) independently. The present invention includes the steps of receiving a first parameter corresponding to the R-CQICH and a second parameter corresponding to the R-ACKCH from a base station via an overhead message and independently determining transmission powers of the R-CQICH and the R-ACKCH using the first and second parameters.
摘要翻译：本发明提供了独立地控制R-CQICH（反向信道质量指示信道）和R-ACKCH（反向确认信道）的发射功率的装置和方法。本发明包括以下步骤：经由开销消息从基站接收对应于R-CQICH的第一参数和对应于R-ACKCH的第二参数，并独立地确定R-CQICH和R-ACKCH的发送功率使用第一和第二参数。

10. 发明申请

US20080102846A1 METHOD FOR ALLOCATING RESOURCES TO UPLINK CONTROL CHANNEL 有权
标题翻译：将资源分配到上行控制通道的方法
公开(公告)号：US20080102846A1
公开(公告)日：2008-05-01
申请号：US11865639
申请日：2007-10-01
申请人： Hak Seong Kim , Bong Kim , Ki Kim , Suk Yoon , In Jung , Dae Lee , Joon Ahn , Dong Seo
发明人： Hak Seong Kim , Bong Kim , Ki Kim , Suk Yoon , In Jung , Dae Lee , Joon Ahn , Dong Seo
IPC分类号： H04Q7/20
CPC分类号： H04W72/0413 , H04L5/0055 , H04L5/0057 , H04W72/085
摘要： A method for adaptively allocating resources of an uplink control channel according to a system situation is disclosed. If a base station (BS) recognizes the system situation, establishes control information for resource allocation, and transmits the control information to a mobile station (MS), the mobile station (MS) allocates resources for transmitting uplink control information using a specific block or a specific resource distribution method according to the corresponding control information. The system situation may be changed according to the number of users contained in the BS's coverage or the usage of a multi-antenna. The variation of the system situation is actively reflected so that the uplink channel resources can be effectively used.
摘要翻译：公开了一种根据系统情况自适应地分配上行链路控制信道的资源的方法。如果基站（BS）识别系统情况，则建立资源分配控制信息，并将控制信息发送到移动台（MS），移动站（MS）使用特定块分配用于发送上行链路控制信息的资源，根据相应控制信息的具体资源分配方法。可以根据BS覆盖范围内的用户数量或多天线的使用情况来改变系统状况。积极反映系统状况的变化，从而可以有效利用上行链路信道资源。

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