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    • 2. 发明申请
    • Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same
    • 具有ESD保护能力的氮化镓系发光器件及其制造方法
    • US20060157718A1
    • 2006-07-20
    • US11220844
    • 2005-09-08
    • Jun SeoSuk YoonSeung Chae
    • Jun SeoSuk YoonSeung Chae
    • H01L31/12H01L27/15
    • H01L33/04H01L27/0248H01L27/15H01L33/32H01L33/38H01L33/44H01L2933/0016
    • A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.
    • 公开了一种氮化镓基发光器件及其制造方法。 发光器件包括依次层叠在衬底上的n型GaN基覆盖层,有源层,p型GaN基覆盖层和p侧电极。 该器件还包括形成在n型GaN基覆盖层的一个区域上的n侧电极和形成在n型GaN基覆盖层的其它区域上的两个或更多个MIM型隧道结。 每个MIM型隧道结包括形成在GaN基覆层上的下金属层,以便接触n型GaN基覆层,形成在下金属层上的绝缘膜和形成的上金属层 在绝缘膜上。 该器件可防止反向ESD电压,从而可以提高对反向ESD电压的容限,从而提高器件的可靠性。
    • 5. 发明申请
    • Gallium nitride (GaN)-based semiconductor light emitting diode and method for manufacturing the same
    • 基于氮化镓(GaN)的半导体发光二极管及其制造方法
    • US20050224811A1
    • 2005-10-13
    • US10811808
    • 2004-03-30
    • Seung ChaeSuk Yoon
    • Seung ChaeSuk Yoon
    • H01L27/15H01L33/06H01L33/30H01L33/42
    • H01L33/14H01L33/32H01L33/40
    • Disclosed are a GaN-based semiconductor light emitting diode and a method for manufacturing the same. The GaN-based semiconductor light emitting diode includes a substrate on which a GaN-based semiconductor material is grown; a lower clad layer formed on the substrate, and made of a first conductive GaN semiconductor material; an active layer formed on a designated portion of the lower clad layer, and made of an undoped GaN semiconductor material; an upper clad layer formed on the active layer, and made of a second conductive GaN semiconductor material; an alloy layer formed on the upper clad layer, and made of an alloy selected from the group consisting of La-based alloys and Ni-based alloys; and an TCO layer formed on the alloy layer. The alloy layer has a high transmittance and forms Ohmic contact, thus reducing a contact resistance.
    • 公开了一种GaN基半导体发光二极管及其制造方法。 GaN基半导体发光二极管包括其上生长GaN基半导体材料的衬底; 形成在所述基板上并由第一导电GaN半导体材料制成的下包层; 形成在下包层的指定部分上并由未掺杂的GaN半导体材料制成的有源层; 形成在所述有源层上并由第二导电GaN半导体材料制成的上覆层; 合金层,形成在上包层上,由选自由La基合金和Ni基合金组成的组合物制成; 和在合金层上形成的TCO层。 合金层具有高透光率,形成欧姆接触,从而降低接触电阻。
    • 7. 发明申请
    • Nitride semiconductor light emitting device and method of manufacturing the same
    • 氮化物半导体发光器件及其制造方法
    • US20050156188A1
    • 2005-07-21
    • US10839284
    • 2004-05-06
    • Jae RoSang ChoSeung Chae
    • Jae RoSang ChoSeung Chae
    • H01L21/28H01L21/00H01L21/3205H01L23/52H01L33/32H01L33/40H01L33/00
    • H01L33/40H01L33/32H01L33/42
    • Disclosed herein are a nitride semiconductor light emitting device and a method of manufacturing the same. The nitride semiconductor light emitting device comprises a substrate for growing a gallium nitride-based semiconductor material, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer such that a predetermined portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer on the active layer, a transparent electrode layer on the p-type nitride semiconductor layer so as to be in an ohmic contact with the p-type nitride semiconductor layer, a p-side bonding pad in the form of a bi-layer of Ta/Au on the transparent electrode layer, and an n-side electrode in the form of a bi-layer of Ta/Au on the exposed portion of the n-type nitride semiconductor layer.
    • 本文公开了一种氮化物半导体发光器件及其制造方法。 氮化物半导体发光器件包括用于生长氮化镓基半导体材料的衬底,衬底上的n型氮化物半导体层,n型氮化物半导体层上的有源层,使得n型氮化物半导体发光器件的预定部分, 露出氮化物半导体层,有源层上的p型氮化物半导体层,p型氮化物半导体层上的透明电极层与p型氮化物半导体层欧姆接触,p型 在透明电极层上形成Ta / Au双层形式的正极焊盘和在n型氮化物的暴露部分上形成Ta / Au双层形式的n侧电极 半导体层。
    • 9. 发明申请
    • Nitride semiconductor light emitting device and method of manufacturing the same
    • 氮化物半导体发光器件及其制造方法
    • US20060202217A1
    • 2006-09-14
    • US11431001
    • 2006-05-10
    • Jae RoSang ChoSeung Chae
    • Jae RoSang ChoSeung Chae
    • H01L33/00
    • H01L33/40H01L33/32H01L33/42
    • A nitride semiconductor light emitting device includes a substrate for growing a gallium nitride-based semiconductor material, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer such that a predetermined portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer on the active layer, a transparent electrode layer on the p-type nitride semiconductor layer so as to be in an ohmic contact with the p-type nitride semiconductor layer, a p-side bonding pad in the form of a bi-layer of Ta/Au on the transparent electrode layer, and an n-side electrode in the form of a bi-layer of Ta/Au on the exposed portion of the n-type nitride semiconductor layer.
    • 氮化物半导体发光器件包括用于生长氮化镓基半导体材料的衬底,衬底上的n型氮化物半导体层,n型氮化物半导体层上的有源层,使得n型氮化物半导体材料的预定部分, 露出氮化物半导体层,有源层上的p型氮化物半导体层,p型氮化物半导体层上的透明电极层与p型氮化物半导体层欧姆接触,p型 在透明电极层上形成Ta / Au双层形式的正极焊盘和在n型氮化物的暴露部分上形成Ta / Au双层形式的n侧电极 半导体层。
    • 10. 发明申请
    • Gallium nitride (GaN)-based semiconductor light emitting diode and method for manufacturing the same
    • 基于氮化镓(GaN)的半导体发光二极管及其制造方法
    • US20050077530A1
    • 2005-04-14
    • US10812015
    • 2004-03-30
    • Seung Chae
    • Seung Chae
    • H01L21/285H01L33/06H01L33/32H01L33/38H01L33/42H01L33/62H01L33/00
    • H01L33/40H01L21/28575H01L33/32
    • Disclosed are a GaN-based semiconductor light emitting diode, in which transmittance of electrodes is improved and high-quality Ohmic contact is formed, and a method for manufacturing the same, thus improving luminance and driving voltage properties. The GaN-based semiconductor light emitting diode includes: a substrate on which a GaN-based semiconductor material is grown; a lower clad layer formed on the substrate, and made of a first conductive GaN semiconductor material; an active layer formed on a designated portion of the lower clad layer, and made of an undoped GaN semiconductor material; an upper clad layer formed on the active layer, and made of a second conductive GaN semiconductor material; and an alloy layer formed on the upper clad layer, and made of a hydrogen-storing alloy. The GaN-based semiconductor light emitting diode improves a luminance property and reduces Ohmic resistance, thus obtaining high-quality Ohmic contact.
    • 公开了一种GaN基半导体发光二极管,其中电极的透射率得到改善并且形成了高质量的欧姆接触,以及其制造方法,从而提高亮度和驱动电压特性。 GaN基半导体发光二极管包括:生长GaN基半导体材料的衬底; 形成在所述基板上并由第一导电GaN半导体材料制成的下包层; 形成在下包层的指定部分上并由未掺杂的GaN半导体材料制成的有源层; 形成在所述有源层上并由第二导电GaN半导体材料制成的上覆层; 以及形成在上包层上并由储氢合金制成的合金层。 GaN基半导体发光二极管提高亮度特性并降低欧姆电阻,从而获得高质量的欧姆接触。