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1. 发明申请

US20070254394A1 Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same 失效
公开(公告)号：US20070254394A1
公开(公告)日：2007-11-01
申请号：US11812868
申请日：2007-06-22
申请人： Jun Seo , Suk Yoon , Seung Chae
发明人： Jun Seo , Suk Yoon , Seung Chae
IPC分类号： H01L21/00
CPC分类号： H01L33/04 , H01L27/0248 , H01L27/15 , H01L33/32 , H01L33/38 , H01L33/44 , H01L2933/0016
摘要： A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.

2. 发明申请

US20060157718A1 Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same 有权
标题翻译：具有ESD保护能力的氮化镓系发光器件及其制造方法
公开(公告)号：US20060157718A1
公开(公告)日：2006-07-20
申请号：US11220844
申请日：2005-09-08
申请人： Jun Seo , Suk Yoon , Seung Chae
发明人： Jun Seo , Suk Yoon , Seung Chae
IPC分类号： H01L31/12 , H01L27/15
CPC分类号： H01L33/04 , H01L27/0248 , H01L27/15 , H01L33/32 , H01L33/38 , H01L33/44 , H01L2933/0016
摘要： A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.
摘要翻译：公开了一种氮化镓基发光器件及其制造方法。发光器件包括依次层叠在衬底上的n型GaN基覆盖层，有源层，p型GaN基覆盖层和p侧电极。该器件还包括形成在n型GaN基覆盖层的一个区域上的n侧电极和形成在n型GaN基覆盖层的其它区域上的两个或更多个MIM型隧道结。每个MIM型隧道结包括形成在GaN基覆层上的下金属层，以便接触n型GaN基覆层，形成在下金属层上的绝缘膜和形成的上金属层在绝缘膜上。该器件可防止反向ESD电压，从而可以提高对反向ESD电压的容限，从而提高器件的可靠性。

3. 发明申请

US20060220057A1 Group III-nitride light emitting device 失效
标题翻译： III族氮化物发光器件
公开(公告)号：US20060220057A1
公开(公告)日：2006-10-05
申请号：US11315150
申请日：2005-12-23
申请人： Hyun Shim , Suk Yoon , Jae Ro , Seung Chae
发明人： Hyun Shim , Suk Yoon , Jae Ro , Seung Chae
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.
摘要翻译：本发明提供了具有改进的外部量子效率和亮度的III族氮化物发光器件。发光器件包括依次形成的n型覆盖层，有源层和p型覆盖层。此外，在p型覆盖层上形成p电极，其中p电极包括CuInO 2层，透明导电氧化物层和顺序地形成在p型上的反射金属层包层反射金属层可以是Ag层或Al层。

4. 发明申请

US20060231854A1 Flip chip type nitride semiconductor light emitting device 有权
标题翻译：倒装芯片型氮化物半导体发光器件
公开(公告)号：US20060231854A1
公开(公告)日：2006-10-19
申请号：US11319343
申请日：2005-12-28
申请人： Seung Chae , Suk Yoon , Kun Ko , Hyun Shim , Bong Yi
发明人： Seung Chae , Suk Yoon , Kun Ko , Hyun Shim , Bong Yi
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42
摘要： The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.
摘要翻译：本发明涉及具有p型和n型氮化物半导体层的倒装芯片型氮化物半导体发光器件及其间的有源层。本发明还具有形成在p型氮化物半导体层上的欧姆接触层，形成在欧姆接触层上的透光性导电氧化物层和形成在透光性导电氧化物层上的高反射金属层。

5. 发明申请

US20050224811A1 Gallium nitride (GaN)-based semiconductor light emitting diode and method for manufacturing the same 失效
标题翻译：基于氮化镓（GaN）的半导体发光二极管及其制造方法
公开(公告)号：US20050224811A1
公开(公告)日：2005-10-13
申请号：US10811808
申请日：2004-03-30
申请人： Seung Chae , Suk Yoon
发明人： Seung Chae , Suk Yoon
IPC分类号： H01L27/15 , H01L33/06 , H01L33/30 , H01L33/42
CPC分类号： H01L33/14 , H01L33/32 , H01L33/40
摘要： Disclosed are a GaN-based semiconductor light emitting diode and a method for manufacturing the same. The GaN-based semiconductor light emitting diode includes a substrate on which a GaN-based semiconductor material is grown; a lower clad layer formed on the substrate, and made of a first conductive GaN semiconductor material; an active layer formed on a designated portion of the lower clad layer, and made of an undoped GaN semiconductor material; an upper clad layer formed on the active layer, and made of a second conductive GaN semiconductor material; an alloy layer formed on the upper clad layer, and made of an alloy selected from the group consisting of La-based alloys and Ni-based alloys; and an TCO layer formed on the alloy layer. The alloy layer has a high transmittance and forms Ohmic contact, thus reducing a contact resistance.
摘要翻译：公开了一种GaN基半导体发光二极管及其制造方法。 GaN基半导体发光二极管包括其上生长GaN基半导体材料的衬底; 形成在所述基板上并由第一导电GaN半导体材料制成的下包层; 形成在下包层的指定部分上并由未掺杂的GaN半导体材料制成的有源层; 形成在所述有源层上并由第二导电GaN半导体材料制成的上覆层; 合金层，形成在上包层上，由选自由La基合金和Ni基合金组成的组合物制成; 和在合金层上形成的TCO层。合金层具有高透光率，形成欧姆接触，从而降低接触电阻。

6. 发明申请

US20060033116A1 Gallium nitride based semiconductor light emitting diode and process for preparing the same 审中-公开
标题翻译：氮化镓基半导体发光二极管及其制备方法
公开(公告)号：US20060033116A1
公开(公告)日：2006-02-16
申请号：US11049876
申请日：2005-02-04
申请人： Seung Chae , Jun Kwak , Hyoun Shin , Jun Seo
发明人： Seung Chae , Jun Kwak , Hyoun Shin , Jun Seo
IPC分类号： H01L29/221
CPC分类号： H01L21/28575 , H01L29/452 , H01L33/32 , H01L33/40 , H01L33/42 , H01L2924/10155
摘要： The present invention provides a gallium nitride based semiconductor light emitting diode having high transparency, and at the same time, capable of improving contact resistance between a p-type GaN layer and electrode and a process for preparing the same. These objects can be accomplished by forming, on an upper part of a upper clad layer made of p-GaN, an ohmic contact forming layer using MIO, ZIO and CIO (In2O3 including one of Mg, Zn and Cu), and then a transparent electrode layer and a second electrode with ITO thereon, so as to improve contact resistance between the upper clad layer and the second electrode while providing high transparency.
摘要翻译：本发明提供一种具有高透明度，同时可提高p型GaN层与电极之间的接触电阻的氮化镓系半导体发光二极管及其制备方法。这些目的可以通过在由p-GaN制成的上覆盖层的上部上形成使用MIO，ZIO和CIO的欧姆接触形成层来实现的（In 2 N 3 O 3， / SUB>包括Mg，Zn和Cu中的一种），然后是透明电极层和具有ITO的第二电极，以提高上覆层和第二电极之间的接触电阻，同时提供高透明度。

7. 发明申请

US20050156188A1 Nitride semiconductor light emitting device and method of manufacturing the same 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20050156188A1
公开(公告)日：2005-07-21
申请号：US10839284
申请日：2004-05-06
申请人： Jae Ro , Sang Cho , Seung Chae
发明人： Jae Ro , Sang Cho , Seung Chae
IPC分类号： H01L21/28 , H01L21/00 , H01L21/3205 , H01L23/52 , H01L33/32 , H01L33/40 , H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： Disclosed herein are a nitride semiconductor light emitting device and a method of manufacturing the same. The nitride semiconductor light emitting device comprises a substrate for growing a gallium nitride-based semiconductor material, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer such that a predetermined portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer on the active layer, a transparent electrode layer on the p-type nitride semiconductor layer so as to be in an ohmic contact with the p-type nitride semiconductor layer, a p-side bonding pad in the form of a bi-layer of Ta/Au on the transparent electrode layer, and an n-side electrode in the form of a bi-layer of Ta/Au on the exposed portion of the n-type nitride semiconductor layer.
摘要翻译：本文公开了一种氮化物半导体发光器件及其制造方法。氮化物半导体发光器件包括用于生长氮化镓基半导体材料的衬底，衬底上的n型氮化物半导体层，n型氮化物半导体层上的有源层，使得n型氮化物半导体发光器件的预定部分，露出氮化物半导体层，有源层上的p型氮化物半导体层，p型氮化物半导体层上的透明电极层与p型氮化物半导体层欧姆接触，p型在透明电极层上形成Ta / Au双层形式的正极焊盘和在n型氮化物的暴露部分上形成Ta / Au双层形式的n侧电极半导体层。

8. 发明申请

US20060167179A1 Plastic resin composition having improved heat resistance, weld strength, chemical resistance, impact strength, elongation, and wettability 有权
公开(公告)号：US20060167179A1
公开(公告)日：2006-07-27
申请号：US11323735
申请日：2005-12-31
申请人： Jaewook Lee , Seung Chae , Jaehyug Cha , Seonglyong Kim , Chanhong Lee
发明人： Jaewook Lee , Seung Chae , Jaehyug Cha , Seonglyong Kim , Chanhong Lee
IPC分类号： C08L51/00
CPC分类号： C08L55/02 , C08L25/12 , C08L25/16 , C08L51/003 , C08L51/04 , C08L2666/24 , C08L2666/06
摘要： Thermoplastic resin compositions are provided. A heat-resistant ABS thermoplastic resin composition including a graft ABS polymer, an α-methylstyrene copolymer, an imide-substituted copolymer, and an additive for improving elongation and impact strength is excellent in weld strength, chemical resistance, impact strength, and elongation. A thermoplastic resin composition including a graft ABS polymer, a α-methylstyrene copolymer, and an additive for improving wettability is excellent in weld strength and wettability.

9. 发明申请

US20060202217A1 Nitride semiconductor light emitting device and method of manufacturing the same 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20060202217A1
公开(公告)日：2006-09-14
申请号：US11431001
申请日：2006-05-10
申请人： Jae Ro , Sang Cho , Seung Chae
发明人： Jae Ro , Sang Cho , Seung Chae
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： A nitride semiconductor light emitting device includes a substrate for growing a gallium nitride-based semiconductor material, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer such that a predetermined portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer on the active layer, a transparent electrode layer on the p-type nitride semiconductor layer so as to be in an ohmic contact with the p-type nitride semiconductor layer, a p-side bonding pad in the form of a bi-layer of Ta/Au on the transparent electrode layer, and an n-side electrode in the form of a bi-layer of Ta/Au on the exposed portion of the n-type nitride semiconductor layer.
摘要翻译：氮化物半导体发光器件包括用于生长氮化镓基半导体材料的衬底，衬底上的n型氮化物半导体层，n型氮化物半导体层上的有源层，使得n型氮化物半导体材料的预定部分，露出氮化物半导体层，有源层上的p型氮化物半导体层，p型氮化物半导体层上的透明电极层与p型氮化物半导体层欧姆接触，p型在透明电极层上形成Ta / Au双层形式的正极焊盘和在n型氮化物的暴露部分上形成Ta / Au双层形式的n侧电极半导体层。

10. 发明申请

US20050077530A1 Gallium nitride (GaN)-based semiconductor light emitting diode and method for manufacturing the same 审中-公开
标题翻译：基于氮化镓（GaN）的半导体发光二极管及其制造方法
公开(公告)号：US20050077530A1
公开(公告)日：2005-04-14
申请号：US10812015
申请日：2004-03-30
申请人： Seung Chae
发明人： Seung Chae
IPC分类号： H01L21/285 , H01L33/06 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/62 , H01L33/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L33/32
摘要： Disclosed are a GaN-based semiconductor light emitting diode, in which transmittance of electrodes is improved and high-quality Ohmic contact is formed, and a method for manufacturing the same, thus improving luminance and driving voltage properties. The GaN-based semiconductor light emitting diode includes: a substrate on which a GaN-based semiconductor material is grown; a lower clad layer formed on the substrate, and made of a first conductive GaN semiconductor material; an active layer formed on a designated portion of the lower clad layer, and made of an undoped GaN semiconductor material; an upper clad layer formed on the active layer, and made of a second conductive GaN semiconductor material; and an alloy layer formed on the upper clad layer, and made of a hydrogen-storing alloy. The GaN-based semiconductor light emitting diode improves a luminance property and reduces Ohmic resistance, thus obtaining high-quality Ohmic contact.
摘要翻译：公开了一种GaN基半导体发光二极管，其中电极的透射率得到改善并且形成了高质量的欧姆接触，以及其制造方法，从而提高亮度和驱动电压特性。 GaN基半导体发光二极管包括：生长GaN基半导体材料的衬底; 形成在所述基板上并由第一导电GaN半导体材料制成的下包层; 形成在下包层的指定部分上并由未掺杂的GaN半导体材料制成的有源层; 形成在所述有源层上并由第二导电GaN半导体材料制成的上覆层; 以及形成在上包层上并由储氢合金制成的合金层。 GaN基半导体发光二极管提高亮度特性并降低欧姆电阻，从而获得高质量的欧姆接触。

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