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1. 发明授权

US06785043B2 Dispersion-compensated optical fiber amplifier 有权
标题翻译：色散补偿光纤放大器
公开(公告)号：US06785043B2
公开(公告)日：2004-08-31
申请号：US10236158
申请日：2002-09-06
申请人： Seong-Taek Hwang , Kwan-Woong Song , Sung-Tae Kim , Young-Hoon Joo , Sung-Jin Park
发明人： Seong-Taek Hwang , Kwan-Woong Song , Sung-Tae Kim , Young-Hoon Joo , Sung-Jin Park
IPC分类号： H01S300
CPC分类号： H01S3/06754 , H01S3/0057 , H01S3/0064 , H01S3/06758 , H01S3/094003
摘要： Disclosed is a dispersion-compensated optical-fiber amplifier including a circulator for outputting an optical signal received at a first terminal to a second terminal, while outputting an optical signal received at the second terminal to a third terminal; a first amplifier for amplifying the optical signal from the second terminal and an optical signal reapplied thereto; a dispersion-compensating fiber for compensating for a dispersion occurring in the optical signal received from the first amplifier and an optical signal reapplied thereto; a second amplifier for amplifying the optical signal from the dispersion-compensating fiber and an optical signal reapplied thereto; a splitter installed on the dispersion-compensating fiber and adapted to output to the dispersion-compensating fiber, an optical signal applied thereto and an optical signal reapplied thereto, while outputting a pumping light applied to one end thereof and adapted to pump both the first and second amplifiers to the other end thereof without allowing the pumping light to pass through the dispersion-compensating fiber; and, a reflector for reflecting back an optical signal from the second amplifier, so that the reflected optical signal is reapplied to the second amplifier, the splitter, the first amplifier, and the circulator, in this order.
摘要翻译：公开了一种色散补偿光纤放大器，包括：循环器，用于将在第一端子处接收的光信号输出到第二端子，同时将在第二端子接收的光信号输出到第三端子; 用于放大来自第二端子的光信号的第一放大器和重新施加到其上的光信号; 用于补偿从第一放大器接收的光信号中出现的色散的色散补偿光纤和重新施加于其上的光信号; 用于放大来自色散补偿光纤的光信号的第二放大器和重新应用于其的光信号; 分散器，其安装在色散补偿光纤上并且适于输出到色散补偿光纤，施加到色散补偿光纤的光信号和重新施加到其上的光信号，同时输出施加到色散补偿光纤的一端的泵浦光，并且适于泵浦第一和第二放大器到另一端，而不允许泵浦光通过色散补偿光纤; 以及用于反射来自第二放大器的光信号的反射器，使得反射的光信号按照该顺序重新施加到第二放大器，分路器，第一放大器和循环器。

2. 发明授权

US06934078B2 Dispersion-compensated erbium-doped fiber amplifier 失效
标题翻译：色散补偿掺铒光纤放大器
公开(公告)号：US06934078B2
公开(公告)日：2005-08-23
申请号：US10299306
申请日：2002-11-19
申请人： Seong-Taek Hwang , Sung-Tae Kim , Sung-Jin Park
发明人： Seong-Taek Hwang , Sung-Tae Kim , Sung-Jin Park
IPC分类号： H01S3/10 , G02B6/00 , H01S3/067 , H01S3/16 , H04B10/12
CPC分类号： H01S3/06754 , H01S3/06725 , H01S3/06758 , H01S3/1608
摘要： Disclosed is dispersion-compensated erbium-doped fiber amplifier. The disclosed fiber amplifier comprises a first fiber amplifying unit, a second fiber amplifying unit arranged downstream from the first fiber amplifying unit while being connected in series to the first fiber amplifying unit, an optical fiber connected in parallel between the first and second fiber amplifying units and adapted to re-use a residual light, remaining after an amplification operation of the first fiber amplifying unit, as a pumping light for the second fiber amplifying unit, a fiber reflector for reflecting an optical signal amplified in the second fiber amplifying unit, thereby causing the reflected optical signal to flow backward towards the second fiber amplifying unit, a circulator for guiding the amplified optical signal, reflected to flow backward by the fiber reflector and dispersion-compensated by a dispersion compensating fiber, to flow along a path different from that of the amplified optical signal applied to the circulator while preventing an amplified spontaneous emission (ASE) generated during an amplification operation of the second fiber amplifying unit from flowing backward towards the first fiber amplifying unit, and the dispersion compensating fiber is arranged between the circulator and the second fiber amplifying unit and adapted to compensate for dispersion of the amplified optical signal.
摘要翻译：公开了色散补偿掺铒光纤放大器。所公开的光纤放大器包括第一光纤放大单元，第二光纤放大单元，布置在与第一光纤放大单元串联连接的同时与第一光纤放大单元串联连接的第二光纤放大单元，并联在第一和第二光纤放大单元之间的光纤并且适于在第一光纤放大单元的放大操作之后残留的剩余光作为用于第二光纤放大单元的泵浦光，用于反射在第二光纤放大单元中放大的光信号的光纤反射器，从而使反射的光信号向后朝向第二光纤放大单元流动，用于引导被光纤反射器向后反射并被色散补偿光纤进行色散补偿的放大的光信号的循环器沿着不同于该光纤的路径流动的放大光信号，同时防止放大的自发在第二光纤放大单元的放大操作期间产生的有利发射（ASE）向后朝向第一光纤放大单元流动，并且色散补偿光纤被布置在循环器和第二光纤放大单元之间，并且适于补偿放大光信号。

3. 发明授权

US07102811B2 Optical fiber amplifier and amplification method capable of compensating dispersion and loss in transmission thereof 失效
标题翻译：能够补偿色散和透射损失的光纤放大器和放大方法
公开(公告)号：US07102811B2
公开(公告)日：2006-09-05
申请号：US10465169
申请日：2003-06-19
申请人： Sung-Tae Kim , Seong-Taek Hwang , Yun-Je Oh
发明人： Sung-Tae Kim , Seong-Taek Hwang , Yun-Je Oh
IPC分类号： H01S4/00 , H04B10/12
CPC分类号： H01S3/06754 , H01S3/094003 , H01S3/094096 , H01S3/2375 , H01S3/302
摘要： An optical fiber amplifier capable of compensating dispersion and loss of an optical signal in transmission along an optical fiber includes an optical fiber doped with erbium ions and having a dispersion compensating function. The amplifier further includes an erbium pump for performing forward pumping to the optical fiber, and a Raman pump for performing backward pumping to the optical fiber which is forward-pumped by the erbium pump means. When an optical signal passes through the optical fiber which undergoes density inversion of erbium ions and Stimulated Raman Scattering (SRS), dispersion and loss of the optical signal is compensated.
摘要翻译：能够补偿光纤传输中的光信号的散射和损耗的光纤放大器包括掺杂有铒离子并具有色散补偿功能的光纤。放大器还包括用于对光纤进行正向泵浦的铒泵和用于对由铒泵装置正向泵送的光纤执行反向泵浦的拉曼泵。当光信号通过经受铒离子浓度反转的光纤和受激拉曼散射（SRS）时，光信号的色散和损耗被补偿。

4. 发明授权

US07612501B2 Plasma display apparatus comprising connector 失效
标题翻译：等离子体显示装置，包括连接器
公开(公告)号：US07612501B2
公开(公告)日：2009-11-03
申请号：US11276035
申请日：2006-02-10
申请人： Sung-Tae Kim
发明人： Sung-Tae Kim
IPC分类号： H01J17/49 , H01L31/0312 , G09G3/10
CPC分类号： H05K3/361 , H01J11/10 , H01J11/46 , H05K1/117 , H05K3/323 , H05K2201/09427 , H05K2201/098
摘要： A plasma display apparatus comprising a connector is provided. The plasma display apparatus comprises a plasma display panel comprising an electrode of a predetermined width and a connector comprising an electrode line of a width narrower than the predetermined width of the electrode to supply a driving signal to the electrode. A distance between the electrode line and an adjacent electrode line is longer than a distance between the electrode and an adjacent electrode.
摘要翻译：提供了包括连接器的等离子体显示装置。等离子体显示装置包括等离子体显示面板，其包括预定宽度的电极和包括宽度比电极的预定宽度窄的电极线的连接器，以向电极提供驱动信号。电极线和相邻电极线之间的距离比电极和相邻电极之间的距离长。

5. 发明申请

US20080014711A1 Semiconductor device isolation structures and methods of fabricating such structures 有权
标题翻译：半导体器件隔离结构及其制造方法
公开(公告)号：US20080014711A1
公开(公告)日：2008-01-17
申请号：US11654588
申请日：2007-01-18
申请人： Jong-Wan Choi , Ju-Seon Goo , Hong-Gun Kim , Yong-Soon Choi , Sung-Tae Kim , Eun-Kyung Baek
发明人： Jong-Wan Choi , Ju-Seon Goo , Hong-Gun Kim , Yong-Soon Choi , Sung-Tae Kim , Eun-Kyung Baek
IPC分类号： H01L21/76
CPC分类号： H01L21/76229 , H01L27/105 , H01L27/11531
摘要： Disclosed are methods for fabricating semiconductor devices incorporating a composite trench isolation structure comprising a first oxide pattern, a SOG pattern and a second oxide pattern wherein the oxide patterns enclose the SOG pattern. The methods include the deposition of a first oxide layer and a SOG layer to fill recessed trench regions formed in the substrate. The first oxide layer and the SOG layer are then subjected to a planarization sequence including a CMP process followed by an etchback process to form a composite structure having a substantially flat upper surface that exposes both the oxide and the SOG material. The second oxide layer is then applied and subjected to a similar CMP/etchback sequence to obtain a composite structure having an upper surface that is recessed relative to a plane defined by the surfaces of adjacent active regions.
摘要翻译：公开了用于制造半导体器件的方法，该半导体器件结合有包括第一氧化物图案，SOG图案和第二氧化物图案的复合沟槽隔离结构，其中氧化物图案包围SOG图案。所述方法包括沉积第一氧化物层和SOG层以填充形成在衬底中的凹陷沟槽区域。然后对第一氧化物层和SOG层进行包括CMP工艺的随后的回蚀工艺的平坦化顺序，以形成具有露出氧化物和SOG材料的基本上平坦的上表面的复合结构。然后施加第二氧化物层并进行类似的CMP /回蚀序列以获得具有相对于由相邻有源区的表面限定的平面凹进的上表面的复合结构。

6. 发明申请

US20070166482A1 Broadband reflective polarizer for liquid crystal display using overcoating method 失效
标题翻译：宽带反射偏光镜用液晶显示器采用外涂法
公开(公告)号：US20070166482A1
公开(公告)日：2007-07-19
申请号：US10587559
申请日：2004-11-19
申请人： Sung-Tae Kim , Keon Kim II
发明人： Sung-Tae Kim , Keon Kim II
IPC分类号： C09K19/00 , B32B37/00 , G02F1/1335 , B32B38/00
CPC分类号： G02F1/133536 , G02B5/305 , G02F2001/133543 , G02F2203/05 , Y10T428/10 , Y10T428/1036
摘要： The present invention relates to a method of manufacturing a reflective polarizing film for a liquid crystal display device in which cholesteric liquid crystal layers having different selective light-reflecting wavelengths are laminated in the laminated coating method, thus a forming liquid crystal film that covers a visible light region and ¼λ retardation film are attached to the liquid crystal film. In this case, two or more cholestric liquid crystal layers having different selective light-reflecting wavelengths are laminated in order from the shorter wavelength to the longer wavelength in the laminated coating method. Further, during the lamination, orientation layers are laminated between the liquid crystal layers to maximize the selective reflection characteristic of the cholesteric liquid crystal.
摘要翻译：本发明涉及一种液晶显示装置的反射型偏振片的制造方法，其中层压涂布法层叠具有不同的选择性光反射波长的胆甾醇型液晶层，从而形成覆盖可见光的液晶膜光区域和1/4延迟膜附着在液晶膜上。在这种情况下，在层叠涂布法中，从短波长到较长波长的顺序层叠具有不同选择性光反射波长的两个以上的胆甾型液晶层。此外，在层压期间，取向层层压在液晶层之间，以使胆甾醇型液晶的选择反射特性最大化。

7. 发明授权

US07135422B2 Methods of forming a multi-layered structure using an atomic layer deposition process and methods of forming a capacitor of an integrated circuit device 有权
标题翻译：使用原子层沉积工艺形成多层结构的方法以及形成集成电路器件的电容器的方法
公开(公告)号：US07135422B2
公开(公告)日：2006-11-14
申请号：US10884507
申请日：2004-07-02
申请人： Gab-Jin Nam , Jong-Wan Kwon , Han-Mei Choi , Jae-Soon Lim , Seung-Hwan Lee , Ki-Chul Kim , Sung-Tae Kim , Young-Sun Kim
发明人： Gab-Jin Nam , Jong-Wan Kwon , Han-Mei Choi , Jae-Soon Lim , Seung-Hwan Lee , Ki-Chul Kim , Sung-Tae Kim , Young-Sun Kim
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/403 , C23C16/405 , C23C16/45529 , H01L21/02175 , H01L21/022 , H01L21/3141 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31645 , H01L28/40 , H01L28/90
摘要： Multi-layered structures formed using atomic-layer deposition processes include multiple metal oxide layers wherein the metal oxide layers are formed without the presence of interlayer oxide layers and may include different metal oxide compositions.
摘要翻译：使用原子层沉积工艺形成的多层结构包括多个金属氧化物层，其中形成金属氧化物层而不存在层间氧化物层，并且可以包括不同的金属氧化物组合物。

8. 发明申请

US20060234517A1 Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same 有权
标题翻译：使用原子层沉积法形成材料的方法和使用其形成半导体器件的电容器的方法
公开(公告)号：US20060234517A1
公开(公告)日：2006-10-19
申请号：US11430856
申请日：2006-05-10
申请人： Jae-Hyun Yeo , Young-Sun Kim , Sung-Tae Kim , In-Sung Park , Gi-Vin Im
发明人： Jae-Hyun Yeo , Young-Sun Kim , Sung-Tae Kim , In-Sung Park , Gi-Vin Im
IPC分类号： H01L21/473
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/452 , C23C16/45553 , H01L21/02181 , H01L21/02274 , H01L21/3141 , H01L21/31604 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31683 , H01L21/31691 , H01L28/40
摘要： Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a substrate and then reacted with an activated oxidant that contains no hydroxyl group to form a dielectric material exhibiting excellent step coverage and improved leakage current characteristics.
摘要翻译：公开了使用原子层沉积（ALD）形成介电材料的方法以及在半导体器件上从这种材料形成电介质层的方法。 ALD方法利用含有至少一个醇化物基团的第一反应物，其被化学吸附在基材的表面上，然后与不含羟基的活化氧化剂反应，形成表现出优异的台阶覆盖率和改善的漏电流特性的电介质材料。

9. 发明授权

US07087482B2 Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same 有权
公开(公告)号：US07087482B2
公开(公告)日：2006-08-08
申请号：US10615881
申请日：2003-07-10
申请人： Jae-Hyun Yeo , Young-Sun Kim , Sung-Tae Kim , In-Sung Park , Gi-Vin Im
发明人： Jae-Hyun Yeo , Young-Sun Kim , Sung-Tae Kim , In-Sung Park , Gi-Vin Im
IPC分类号： H01L21/8242
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/452 , C23C16/45553 , H01L21/02181 , H01L21/02274 , H01L21/3141 , H01L21/31604 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31683 , H01L21/31691 , H01L28/40
摘要： Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a substrate and then reacted with an activated oxidant that contains no hydroxyl group to form a dielectric material exhibiting excellent step coverage and improved leakage current characteristics.

10. 发明申请

US20060166476A1 Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structure 有权
标题翻译：具有高介电常数的介电结构的形成方法和具有电介质结构的半导体器件的制造方法
公开(公告)号：US20060166476A1
公开(公告)日：2006-07-27
申请号：US11339416
申请日：2006-01-25
申请人： Jong-Cheol Lee , Sung-Tae Kim , Young-Sun Kim , Cha-Young Yoo , Gab-Jin Nam , Young-Geun Park , Jae-Hyoung Choi , Jae-Hyun Yeo , Ha-Jin Lim , Yun-Seok Kim
发明人： Jong-Cheol Lee , Sung-Tae Kim , Young-Sun Kim , Cha-Young Yoo , Gab-Jin Nam , Young-Geun Park , Jae-Hyoung Choi , Jae-Hyun Yeo , Ha-Jin Lim , Yun-Seok Kim
IPC分类号： H01L21/471
CPC分类号： H01L21/022 , C23C14/5826 , C23C14/586 , C23C16/56 , H01L21/02142 , H01L21/02252 , H01L21/28273 , H01L21/3141 , H01L21/3143 , H01L21/31645 , H01L27/10852 , H01L27/10873 , H01L27/115 , H01L27/11521 , H01L28/40 , H01L29/513 , H01L29/517 , H01L29/78
摘要： In a method of manufacturing a dielectric structure, after a first dielectric layer is formed on a substrate by using a metal oxide doped with silicon, the substrate is placed on a susceptor of a chamber. By treating the first dielectric layer with a plasma in controlling a voltage difference between the susceptor and a ground, a second dielectric layer is formed on the first dielectric layer. The second dielectric layer including a metal oxynitride doped with silicon having enough content of nitrogen is formed on the first dielectric layer. Therefore, dielectric properties of the dielectric structure comprising the first and the second dielectric layers can be improved and a leakage current can be greatly decreased. By adapting the dielectric structure to a gate insulation layer and/or to a dielectric layer of a capacitor or of a non-volatile semiconductor memory device, capacitances and electrical properties can be improved.
摘要翻译：在制造电介质结构的方法中，在通过使用掺杂有硅的金属氧化物在基板上形成第一介电层之后，将基板放置在室的基座上。通过在控制基座和接地之间的电压差的同时用等离子体处理第一电介质层，在第一电介质层上形成第二电介质层。在第一电介质层上形成包括掺杂有足够的氮含量的硅的金属氮氧化物的第二电介质层。因此，可以提高包括第一和第二电介质层的电介质结构的介电性能，并且可以大大降低泄漏电流。通过使电介质结构适应于栅极绝缘层和/或电容器或非易失性半导体存储器件的电介质层，可以提高电容和电性能。

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