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1. 发明申请

US20070026824A1 Electronic component for amplifying high frequency and radio communication system 审中-公开
标题翻译：用于放大高频无线电通信系统的电子元件
公开(公告)号：US20070026824A1
公开(公告)日：2007-02-01
申请号：US11543143
申请日：2006-10-05
申请人： Seikou Ono , Hitoshi Akamine , Tetsuaki Adachi
发明人： Seikou Ono , Hitoshi Akamine , Tetsuaki Adachi
IPC分类号： H04B1/04 , H04B1/16
CPC分类号： H04B1/005 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/13091 , H01L2924/19105 , H03F3/24 , H03F2200/429 , H03F2203/7236 , H03G3/3047 , H04B1/0483 , H04B1/406 , H04B2001/0408 , H01L2924/00
摘要： A high-frequency power module as a component of a radio communication system capable of performing communications in two frequency bands such as GSM and DCS and has a first transistor for output detection for receiving a signal which is the same as an input signal of a first power amplification transistor for amplifying a high frequency signal on the GSM side and a first current mirror circuit for passing current proportional to current of the transistor. A second transistor for output detection for receiving an input signal of a second power amplification transistor for amplifying a high frequency signal on the DCS side is also provided as is a second current mirror circuit for passing current proportional to current of the transistor. Conversion of current transferred from the first and second current mirror circuits to voltage is shared by the GSM and DCS.
摘要翻译：一种高频功率模块，作为无线电通信系统的组件，能够在诸如GSM和DCS的两个频带中执行通信，并且具有用于输出检测的第一晶体管，用于接收与第一个信号的输入信号相同的信号用于放大GSM侧的高频信号的功率放大晶体管和用于通过与晶体管的电流成比例的电流的第一电流镜电路。还提供用于接收用于放大DCS侧的高频信号的第二功率放大晶体管的输入信号的第二晶体管，用于通过与晶体管的电流成比例的电流的第二电流镜电路。从第一和第二电流镜电路传输的电流转换为电压由GSM和DCS共享。

2. 发明授权

US07139538B2 Electronic component for amplifying high frequency power and radio communication system 失效
标题翻译：用于放大高频电源和无线电通信系统的电子元件
公开(公告)号：US07139538B2
公开(公告)日：2006-11-21
申请号：US10520706
申请日：2002-09-05
申请人： Seikou Ono , Hitoshi Akamine , Tetsuaki Adachi
发明人： Seikou Ono , Hitoshi Akamine , Tetsuaki Adachi
IPC分类号： H04B1/04 , H03C1/62 , H01Q11/12
CPC分类号： H04B1/005 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/19105 , H03F3/24 , H03F2200/429 , H03F2203/7236 , H03G3/3047 , H04B1/0483 , H04B1/406 , H04B2001/0408 , H01L2924/00
摘要： A high-frequency power module as a component of a radio communication system capable of performing communications in two frequency bands such as GSM and DCS and has a first transistor for output detection for receiving a signal which is the same as an input signal of a first power amplification transistor for amplifying a high frequency signal on the GSM side and a first current mirror circuit for passing current proportional to current of the transistor. A second transistor for output detection for receiving an input signal of a second power amplification transistor for amplifying a high frequency signal on the DCS side is also provided as is a second current mirror circuit for passing current proportional to current of the transistor. Conversion of current transferred from the first and second current mirror circuits to voltage is shared by the GSM and DCS.
摘要翻译：一种高频功率模块，作为无线电通信系统的组件，能够在诸如GSM和DCS的两个频带中执行通信，并且具有用于输出检测的第一晶体管，用于接收与第一个信号的输入信号相同的信号用于放大GSM侧的高频信号的功率放大晶体管和用于通过与晶体管的电流成比例的电流的第一电流镜电路。还提供用于接收用于放大DCS侧的高频信号的第二功率放大晶体管的输入信号的第二晶体管，用于通过与晶体管的电流成比例的电流的第二电流镜电路。从第一和第二电流镜电路传输的电流转换为电压由GSM和DCS共享。

3. 发明申请

US20050245212A1 Electronic component for amplifying high frequency power and radio communication system 失效
标题翻译：用于放大高频电源和无线电通信系统的电子元件
公开(公告)号：US20050245212A1
公开(公告)日：2005-11-03
申请号：US10520706
申请日：2002-09-05
申请人： Seikou Ono , Hitoshi Akamine , Tetsuaki Adachi
发明人： Seikou Ono , Hitoshi Akamine , Tetsuaki Adachi
IPC分类号： H03F3/24 , H03G3/30 , H04B1/04 , H04B1/40 , H03C1/62 , H04B17/00
CPC分类号： H04B1/005 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/19105 , H03F3/24 , H03F2200/429 , H03F2203/7236 , H03G3/3047 , H04B1/0483 , H04B1/406 , H04B2001/0408 , H01L2924/00
摘要： A high-frequency power module as a component of a radio communication system capable of performing communications in two frequency bands such as GSM and DCS includes: a first transistor for output detection for receiving a signal which is the same as an input signal of a first power amplification transistor for amplifying a high frequency signal on the GSM side and a first current mirror circuit for passing current proportional to current of the transistor; and a second transistor for output detection for receiving an input signal of a second power amplification transistor for amplifying a high frequency signal on the DCS side and a second current mirror circuit for passing current proportional to current of the transistor. A sense resistor for converting current on the transfer side of the current mirror circuits to voltage, using the voltage as an output level detection signal, comparing the detected output level with a required output level, accordingly controlling the output level, and converting current transferred from the first and second current mirror circuits to voltage is shared by the GSM and DCS.
摘要翻译：作为能够在两个频带（例如GSM和DCS）中进行通信的无线电通信系统的组件的高频功率模块包括：用于输出检测的第一晶体管，用于接收与第一个信号的输入信号相同的信号用于放大GSM侧的高频信号的功率放大晶体管和用于通过与晶体管的电流成比例的电流的第一电流镜电路; 以及用于输出检测的第二晶体管，用于接收用于放大DCS侧的高频信号的第二功率放大晶体管的输入信号和用于通过与晶体管的电流成比例的电流的第二电流镜电路。一种检测电阻器，用于将电流镜电路的传输侧的电流转换为电压，使用电压作为输出电平检测信号，将检测到的输出电平与所需的输出电平相比较，从而控制输出电平，并转换从第一和第二电流镜电路到电压由GSM和DCS共享。

4. 发明授权

US07064612B2 High frequency power amplification electric part and wireless communication system 失效
标题翻译：高频功率放大电气部件和无线通信系统
公开(公告)号：US07064612B2
公开(公告)日：2006-06-20
申请号：US10682250
申请日：2003-10-10
申请人： Hitoshi Akamine , Seikou Ono , Masashi Maruyama
发明人： Hitoshi Akamine , Seikou Ono , Masashi Maruyama
IPC分类号： H03G3/30
CPC分类号： H03F1/0272 , H03F3/60 , H03F2200/294 , H03F2200/372 , H03F2200/78 , H03G3/3042
摘要： The present invention provides a high frequency power amplification circuit capable of preventing an output power and current consumption from being largely changed even when a load fluctuates in a wireless communication system for detecting an output level necessary for feedback control by a current detecting method. In a high frequency power amplification circuit as a component of a wireless communication system which detects an output level necessary for feedback control by a current detecting method, a capacitive element is interposed between the drain terminal of a power amplification transistor in the final stage and the gate terminal of a transistor constructing a current mirror circuit in a circuit for detecting an output level, and a change in an output power accompanying load fluctuation is reflected in a detection current of the output level detecting circuit.
摘要翻译：本发明提供一种高频功率放大电路，即使在用于检测通过电流检测方法的反馈控制所需的输出电平的无线通信系统中的负载波动时，也能够防止输出功率和电流消耗大幅度变化。在作为通过电流检测方法检测反馈控制所需的输出电平的无线通信系统的组件的高频功率放大电路中，电容元件插在最后级的功率放大晶体管的漏极端子和在用于检测输出电平的电路中构成电流镜电路的晶体管的栅极端子和伴随负载波动的输出功率的变化被反映在输出电平检测电路的检测电流中。

5. 发明授权

US07439622B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07439622B2
公开(公告)日：2008-10-21
申请号：US11581587
申请日：2006-10-17
申请人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
发明人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
IPC分类号： H01L23/48 , H01L23/52 , H01R11/00
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L27/088 , H01L29/0696 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/4238 , H01L29/7835 , H01L2223/6644 , H01L2223/6688 , H01L2224/05599 , H01L2224/45099 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F3/189 , H03F3/211 , H03F3/601 , H03F3/68 , H03F3/72 , H03F2200/294 , H03F2200/372 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.
摘要翻译：本发明提供一种半导体器件，包括半导体衬底和形成在半导体衬底上的晶体管，其中构成晶体管的外部电极端子的控制电极端子和传输输出信号的第一电极端子设置在半导体的主表面上基板，其中控制电极端子设置为至少一个，并且多个第一电极端子布置在一侧，并且多个第一电极端子布置在另一侧，其中控制电极端子插入其间，其中包括控制电极端子和位于控制电极端子一侧的多个第一电极端子的部分构成第一晶体管部分，并且其中包括控制电极端子和位于第一晶体管部分上的多个第一电极端子的部分另一边的控制电极端子构成第二晶体管部分。半导体器件是四边形。

6. 发明授权

US07145394B2 High frequency power amplifier module, and wireless communication system 失效
标题翻译：高频功率放大器模块和无线通信系统
公开(公告)号：US07145394B2
公开(公告)日：2006-12-05
申请号：US11098454
申请日：2005-04-05
申请人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
发明人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
IPC分类号： H03F3/16
CPC分类号： H01L29/7835 , H01L29/1045 , H01L29/4175 , H01L29/7831 , H01L2924/0002 , H03F1/02 , H03F1/223 , H03F3/24 , H03F3/601 , H03F3/72 , H03F2203/7206 , H03G1/007 , H04B2001/045 , H01L2924/00
摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).
摘要翻译：一种多级放大器结构的高频功率放大器模块，包括：输入端; 输出端子; 一个控制终端; 和模式切换终端。第一放大级包括双栅极FET，并且根据信号的偏置电压从控制端子和模式切换端子施加到双栅极FET的第一栅极和第二栅极，以及来自输入端的无线电信号端子施加到第二栅极，例如双栅极FET的源极。根据来自模式切换端子的信号，高频功率放大器模块的模式用于GSM（即，用于非线性放大动作）和EDGE（用于线性放大动作）。

7. 发明授权

US06617927B2 High frequency power amplifier module, and wireless communications system 失效
公开(公告)号：US06617927B2
公开(公告)日：2003-09-09
申请号：US10122382
申请日：2002-04-16
申请人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
发明人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
IPC分类号： H03F316
CPC分类号： H01L29/7835 , H01L29/1045 , H01L29/4175 , H01L29/7831 , H01L2924/0002 , H03F1/02 , H03F1/223 , H03F3/24 , H03F3/601 , H03F3/72 , H03F2203/7206 , H03G1/007 , H04B2001/045 , H01L2924/00
摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).

8. 发明申请

US20050208905A1 High frequency power amplifier module, and wireless communication system 失效
标题翻译：高频功率放大器模块和无线通信系统
公开(公告)号：US20050208905A1
公开(公告)日：2005-09-22
申请号：US11098454
申请日：2005-04-05
申请人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
发明人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
IPC分类号： H03F3/189 , H01L29/10 , H01L29/417 , H01L29/78 , H01Q11/12 , H03F1/02 , H03F1/22 , H03F1/32 , H03F3/60 , H03F3/72 , H03G1/00 , H04B1/04 , H04K1/02
CPC分类号： H01L29/7835 , H01L29/1045 , H01L29/4175 , H01L29/7831 , H01L2924/0002 , H03F1/02 , H03F1/223 , H03F3/24 , H03F3/601 , H03F3/72 , H03F2203/7206 , H03G1/007 , H04B2001/045 , H01L2924/00
摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).
摘要翻译：一种多级放大器结构的高频功率放大器模块，包括：输入端; 输出端子; 一个控制终端; 和模式切换终端。第一放大级包括双栅极FET，并且根据信号的偏置电压从控制端子和模式切换端子施加到双栅极FET的第一栅极和第二栅极，以及来自输入端的无线电信号端子施加到第二栅极，例如双栅极FET的源极。根据来自模式切换端子的信号，高频功率放大器模块的模式用于GSM（即，用于非线性放大动作）和EDGE（用于线性放大动作）。

9. 发明授权

US08022537B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08022537B2
公开(公告)日：2011-09-20
申请号：US12203851
申请日：2008-09-03
申请人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
发明人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
IPC分类号： H01L23/48 , H01L23/52 , H01R11/00
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L27/088 , H01L29/0696 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/4238 , H01L29/7835 , H01L2223/6644 , H01L2223/6688 , H01L2224/05599 , H01L2224/45099 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F3/189 , H03F3/211 , H03F3/601 , H03F3/68 , H03F3/72 , H03F2200/294 , H03F2200/372 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.
摘要翻译：本发明提供一种半导体器件，包括半导体衬底和形成在半导体衬底上的晶体管，其中构成晶体管的外部电极端子的控制电极端子和传输输出信号的第一电极端子设置在半导体的主表面上基板，其中控制电极端子设置为至少一个，并且多个第一电极端子布置在一侧，并且多个第一电极端子布置在另一侧，其中控制电极端子插入其间，其中包括控制电极端子和位于控制电极端子一侧的多个第一电极端子的部分构成第一晶体管部分，并且其中包括控制电极端子和位于第一晶体管部分上的多个第一电极端子的部分另一边的控制电极端子构成第二晶体管部分。半导体器件是四边形。

10. 发明申请

US20070034946A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070034946A1
公开(公告)日：2007-02-15
申请号：US11581587
申请日：2006-10-17
申请人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
发明人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
IPC分类号： H01L29/76
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L27/088 , H01L29/0696 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/4238 , H01L29/7835 , H01L2223/6644 , H01L2223/6688 , H01L2224/05599 , H01L2224/45099 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F3/189 , H03F3/211 , H03F3/601 , H03F3/68 , H03F3/72 , H03F2200/294 , H03F2200/372 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.
摘要翻译：本发明提供一种半导体器件，包括半导体衬底和形成在半导体衬底上的晶体管，其中构成晶体管的外部电极端子的控制电极端子和传输输出信号的第一电极端子设置在半导体的主表面上基板，其中控制电极端子设置为至少一个，并且多个第一电极端子布置在一侧，并且多个第一电极端子布置在另一侧，其中控制电极端子插入其间，其中包括控制电极端子和位于控制电极端子一侧的多个第一电极端子的部分构成第一晶体管部分，并且其中包括控制电极端子和位于第一晶体管部分上的多个第一电极端子的部分另一边的控制电极端子构成第二晶体管部分。半导体器件是四边形。

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