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1. 发明授权

US08735299B2 Semiconductor device manufacturing method and computer-readable storage medium 有权
标题翻译：半导体器件制造方法和计算机可读存储介质
公开(公告)号：US08735299B2
公开(公告)日：2014-05-27
申请号：US13410512
申请日：2012-03-02
申请人： Seiichi Watanabe , Manabu Sato , Kazuki Narishige , Takanori Sato , Takayuki Katsunuma
发明人： Seiichi Watanabe , Manabu Sato , Kazuki Narishige , Takanori Sato , Takayuki Katsunuma
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32669 , H01L21/0206 , H01L21/0273 , H01L21/31138 , H01L21/31144 , H01L21/32137 , H01L21/32139 , H01L27/11556 , H01L27/11582
摘要： There is provided a semiconductor device manufacturing method for forming a step-shaped structure in a substrate by etching the substrate having thereon a multilayer film and a photoresist film on the multilayer film and serving as an etching mask. The multilayer film is formed by alternately layering a first film having a first permittivity and a second film having a second permittivity different from the first permittivity. The method includes a first process for plasma-etching the first film by using the photoresist film as a mask; a second process for exposing the photoresist film to hydrogen-containing plasma; a third process for trimming the photoresist film; and a fourth process for etching the second film by using the trimmed photoresist film and the plasma-etched first film as a mask. The step-shaped structure is formed in the multilayer film by repeatedly performing the first process to the fourth process in this sequence.
摘要翻译：提供了一种半导体器件制造方法，用于通过在多层膜上蚀刻其上具有多层膜的基板和光致抗蚀剂膜并用作蚀刻掩模，在基板中形成阶梯形结构。通过交替层叠具有第一介电常数的第一膜和具有不同于第一介电常数的第二介电常数的第二膜形成多层膜。该方法包括通过使用光致抗蚀剂膜作为掩模来等离子体蚀刻第一膜的第一工艺; 用于将光致抗蚀剂膜暴露于含氢等离子体的第二种方法; 用于修整光致抗蚀剂膜的第三工艺; 以及通过使用修整的光致抗蚀剂膜和等离子体蚀刻的第一膜作为掩模来蚀刻第二膜的第四工艺。通过以该顺序反复进行第四工序的第一工序，在多层膜中形成阶梯状结构。

2. 发明申请

US20120225561A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND COMPUTER-READABLE STORAGE MEDIUM 有权
标题翻译：半导体器件制造方法和计算机可读存储介质
公开(公告)号：US20120225561A1
公开(公告)日：2012-09-06
申请号：US13410512
申请日：2012-03-02
申请人： Seiichi Watanabe , Manabu Sato , Kazuki Narishige , Takanori Sato , Takayuki Katsunuma
发明人： Seiichi Watanabe , Manabu Sato , Kazuki Narishige , Takanori Sato , Takayuki Katsunuma
IPC分类号： H01L21/3065 , B05C21/00
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32669 , H01L21/0206 , H01L21/0273 , H01L21/31138 , H01L21/31144 , H01L21/32137 , H01L21/32139 , H01L27/11556 , H01L27/11582
摘要： There is provided a semiconductor device manufacturing method for forming a step-shaped structure in a substrate by etching the substrate having thereon a multilayer film and a photoresist film on the multilayer film and serving as an etching mask. The multilayer film is formed by alternately layering a first film having a first permittivity and a second film having a second permittivity different from the first permittivity. The method includes a first process for plasma-etching the first film by using the photoresist film as a mask; a second process for exposing the photoresist film to hydrogen-containing plasma; a third process for trimming the photoresist film; and a fourth process for etching the second film by using the trimmed photoresist film and the plasma-etched first film as a mask. The step-shaped structure is formed in the multilayer film by repeatedly performing the first process to the fourth process in this sequence.
摘要翻译：提供了一种半导体器件制造方法，用于通过在多层膜上蚀刻其上具有多层膜的基板和光致抗蚀剂膜并用作蚀刻掩模，在基板中形成阶梯形结构。通过交替层叠具有第一介电常数的第一膜和具有不同于第一介电常数的第二介电常数的第二膜形成多层膜。该方法包括通过使用光致抗蚀剂膜作为掩模来等离子体蚀刻第一膜的第一工艺; 用于将光致抗蚀剂膜暴露于含氢等离子体的第二种方法; 用于修整光致抗蚀剂膜的第三工艺; 以及通过使用修整的光致抗蚀剂膜和等离子体蚀刻的第一膜作为掩模来蚀刻第二膜的第四工艺。通过以该顺序反复进行第四工序的第一工序，在多层膜中形成阶梯状结构。

3. 发明申请

US20090047795A1 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM 审中-公开
标题翻译：等离子体加工设备，等离子体处理方法和储存介质
公开(公告)号：US20090047795A1
公开(公告)日：2009-02-19
申请号：US12192388
申请日：2008-08-15
申请人： Tatsuo MATSUDO , Shinji Himori , Noriaki Imai , Takeshi Ohse , Jun Abe , Takayuki Katsunuma
发明人： Tatsuo MATSUDO , Shinji Himori , Noriaki Imai , Takeshi Ohse , Jun Abe , Takayuki Katsunuma
IPC分类号： H01L21/306 , H01L21/3065 , H01L21/31
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32146 , H01J37/32165
摘要： A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.
摘要翻译：一种等离子体处理装置包括：第一射频（RF）电源单元，用于将第一和第二电极中的至少一个施加于处理气体中产生等离子体，所述第一和第二电极在排气处理中相互面对地设置; 房间。所述第一RF电源单元由控制单元控制，使得所述第一RF功率具有用于产生等离子体的第一幅度的第一相位和所述第一RF功率具有第二幅度以用于基本上不产生等离子体的第二相位以预定间隔交替重复。

4. 发明授权

US07189653B2 Etching method and etching apparatus 有权
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：US07189653B2
公开(公告)日：2007-03-13
申请号：US10501917
申请日：2003-02-03
申请人： Takayuki Katsunuma
发明人： Takayuki Katsunuma
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J2237/334 , H01L21/31144
摘要： A mask material layer 102 of a desired pattern is formed on a silicon oxide film 101. The exposed parts of the silicon oxide film 101 is etched in accordance with the pattern of the mask material layer 102 by plasma etching by using a mixed gas fed at a rate such that the ratio (C5F8+O2/Ar) of the total flow rate of C5F8+O2 to the flow rate of Ar is 0.02 (2%) or less. Thus, a generally vertical right-angled portion is formed in the silicon oxide film 101. Therefore, no microtrenches are formed, and etching into a desired pattern is precisely effected.
摘要翻译：在氧化硅膜101上形成所需图案的掩模材料层102。氧化硅膜101的暴露部分根据掩模材料层102的图案通过等离子体蚀刻被蚀刻，其中使用混合气体，其速率使得比例（C≤5< C 5 C 8 O + 2 O 2的总流量的总和流速的最大值> 8 2 / Ar的流量为0.02（2％）以下。因此，在氧化硅膜101中形成大致垂直的直角部分。因此，不形成微通道，并且精确地实现了所需图案的蚀刻。

5. 发明申请

US20050150863A1 Etching method and etching apparatus 有权
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：US20050150863A1
公开(公告)日：2005-07-14
申请号：US10501917
申请日：2003-02-03
申请人： Takayuki Katsunuma
发明人： Takayuki Katsunuma
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , C23F1/00
CPC分类号： H01L21/31116 , H01J2237/334 , H01L21/31144
摘要： A mask material layer 102 of a desired pattern is formed on a silicon oxide film 101. The exposed parts of the silicon oxide film 101 is etched in accordance with the pattern of the mask material layer 102 by plasma etching by using a mixed gas fed at a rate such that the ratio (C5F8+O2/Ar) of the total flow rate of C5F8+O2 to the flow rate of Ar is 0.02 (2%) or less. Thus, a generally vertical right-angled portion is formed in the silicon oxide film 101. Therefore, no microtrenches are formed, and etching into a desired pattern is precisely effected.
摘要翻译：在氧化硅膜101上形成所需图案的掩模材料层102。氧化硅膜101的暴露部分根据掩模材料层102的图案通过等离子体蚀刻被蚀刻，其中使用混合气体，其速率使得比例（C≤5< C 5 C 8 O + 2 O 2的总流量的总和流速的最大值> 8 2 / Ar的流量为0.02（2％）以下。因此，在氧化硅膜101中形成大致垂直的直角部分。因此，不形成微通道，并且精确地实现了所需图案的蚀刻。

6. 发明授权

US09048178B2 Plasma etching method and semiconductor device manufacturing method 有权
标题翻译：等离子体蚀刻方法和半导体器件制造方法
公开(公告)号：US09048178B2
公开(公告)日：2015-06-02
申请号：US14346986
申请日：2012-09-25
申请人： Kazuhiro Kubota , Masanobu Honda , Takayuki Katsunuma
发明人： Kazuhiro Kubota , Masanobu Honda , Takayuki Katsunuma
IPC分类号： H01L21/302 , H01L21/66 , H01J37/32 , H01L21/311 , H01L21/768
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32449 , H01J37/32724 , H01L21/308 , H01L21/31116 , H01L21/31144 , H01L21/76802 , H01L21/76811 , H01L21/76813 , H01L21/76877 , H01L22/26 , H01L2221/1015 , H01L2924/0002 , H01L2924/00
摘要： A plasma etching method is provided for etching a substrate corresponding to an etching object within an etching apparatus that includes a supply condition adjustment unit for adjusting a supply condition for supplying etching gas to the substrate, a temperature adjustment unit for adjusting a temperature of the substrate placed on a stage along a radial direction, and a plasma generating unit for generating plasma within a space between the supply condition adjustment unit and the stage. The plasma etching method includes a control step in which the temperature adjustment unit controls the temperature of the substrate to be uniform within a substrate plane of the substrate, and an adjustment step in which the supply condition adjustment unit adjusts a concentration distribution of active species contained in the plasma generated by the plasma generation unit within the space above the substrate.
摘要翻译：提供了一种等离子体蚀刻方法，用于在包括用于调节向衬底提供蚀刻气体的供应条件的供应条件调节单元的蚀刻装置内蚀刻对应于蚀刻对象的衬底，温度调节单元，用于调节衬底的温度放置在沿径向的台面上，以及等离子体产生单元，用于在供应条件调节单元和台之间的空间内产生等离子体。等离子体蚀刻方法包括：控制步骤，其中温度调节单元控制衬底的温度在衬底的衬底平面内均匀;以及调节步骤，其中供应条件调节单元调节所含活性物质的浓度分布在等离子体产生单元产生的等离子体中，在衬底上方的空间内。

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