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1. 发明授权

US09809872B2 Dilute copper alloy material, dilute copper alloy wire, dilute copper alloy twisted wire and cable using the same, coaxial cable and composite cable, and method of manufacturing dilute copper alloy material and dilute copper alloy wire 有权
公开(公告)号：US09809872B2
公开(公告)日：2017-11-07
申请号：US12756551
申请日：2010-04-08
申请人： Seigi Aoyama , Toru Sumi , Shuji Sakai , Takahiro Sato , Hidenori Abe
发明人： Seigi Aoyama , Toru Sumi , Shuji Sakai , Takahiro Sato , Hidenori Abe
IPC分类号： C22C9/00 , B22D11/00 , H01B1/02 , C22F1/08 , B22D21/02
CPC分类号： C22C9/00 , B22D21/025 , C22F1/08 , H01B1/026
摘要： A dilute copper alloy material includes, based on a total mass of the dilute copper alloy material, 2 to 12 mass ppm of sulfur, 2 to 30 mass ppm of oxygen, 4 to 55 mass ppm of titanium, and a balance of pure copper and inevitable impurity. A part of the sulfur and the titanium forms a compound or an aggregate of TiO, TiO2, TiS or Ti—O—S, and an other part of the sulfur and the titanium forms a solid solution. TiO, TiO2, TiS and Ti—O—S distributed in a crystal grain of the dilute copper alloy material are not more than 200 nm, not more than 1000 nm, not more than 200 nm and not more than 300 nm, respectively, in particle size thereof, and not less than 90% of particles distributed in a crystal grain of the dilute copper alloy material are 500 nm or less in particle size.

2. 发明申请

US20100263905A1 DILUTE COPPER ALLOY MATERIAL, DILUTE COPPER ALLOY WIRE, DILUTE COPPER ALLOY TWISTED WIRE AND CABLE USING THE SAME, COAXIAL CABLE AND COMPOSITE CABLE, AND METHOD OF MANUFACTURING DILUTE COPPER ALLOY MATERIAL AND DILUTE COPPER ALLOY WIRE 有权
标题翻译：稀释铜合金材料，稀土铜合金线，稀土铜合金线和使用其的电缆，同轴电缆和复合电缆，以及制造稀土铜合金材料和稀土铜合金线的方法
公开(公告)号：US20100263905A1
公开(公告)日：2010-10-21
申请号：US12756551
申请日：2010-04-08
申请人： Seigi AOYAMA , Toru Sumi , Shuji Sakai , Takahiro Sato , Hidenori Abe
发明人： Seigi AOYAMA , Toru Sumi , Shuji Sakai , Takahiro Sato , Hidenori Abe
IPC分类号： H01B9/02 , H01B5/00 , H01B5/08 , H01B11/02 , C22C9/00 , B22D11/06
CPC分类号： C22C9/00 , B22D21/025 , C22F1/08 , H01B1/026
摘要： A dilute copper alloy material includes, based on a total mass of the dilute copper alloy material, 2 to 12 mass ppm of sulfur, 2 to 30 mass ppm of oxygen, 4 to 55 mass ppm of titanium, and a balance consisting of pure copper and an inevitable impurity. A part of the sulfur and the titanium forms a compound or an aggregate of TiO, TiO2, TiS or Ti—O—S, and an other part of the sulfur and the titanium forms a solid solution. TiO, TiO2, TiS and Ti—O—S distributed in a crystal grain of the dilute copper alloy material are not more than 200 nm, not more than 1000 nm, not more than 200 nm and not more than 300 nm, respectively, in particle size thereof, and not less than 90% of particles distributed in a crystal grain of the dilute copper alloy material are not more than 500 nm or less in particle size.
摘要翻译：稀铜合金材料基于稀铜合金材料的总质量包括2〜12质量ppm的硫，2〜30质量ppm的氧，4〜55质量ppm的钛，余量由纯铜和不可避免的杂质。硫和钛的一部分形成TiO，TiO 2，TiS或Ti-O-S的化合物或聚集体，硫和钛的另一部分形成固溶体。分布在稀铜合金材料的晶粒中的TiO，TiO 2，TiS和Ti-O-S分别不大于200nm，不大于1000nm，不大于200nm且不大于300nm 其粒径分布在稀铜合金材料的晶粒中的90％以上的粒子的粒径为500nm以下。

3. 发明授权

US09234263B2 Weldment 有权
标题翻译：焊接
公开(公告)号：US09234263B2
公开(公告)日：2016-01-12
申请号：US13317463
申请日：2011-10-19
申请人： Hiromitsu Kuroda , Toru Sumi , Hideyuki Sagawa , Seigi Aoyama , Masayoshi Goto , Takahiko Hanada , Takahiro Sato , Hidenori Abe
发明人： Hiromitsu Kuroda , Toru Sumi , Hideyuki Sagawa , Seigi Aoyama , Masayoshi Goto , Takahiko Hanada , Takahiro Sato , Hidenori Abe
IPC分类号： B32B15/20 , C22C9/00 , B23K31/00 , C22C1/02 , C22C1/10 , C22F1/00 , C22F1/08
CPC分类号： C22C9/00 , B23K31/00 , B32B15/20 , C22C1/02 , C22C1/1036 , C22F1/00 , C22F1/08 , Y10T428/1266 , Y10T428/12667 , Y10T428/12882 , Y10T428/12903 , Y10T428/1291
摘要： A weldment includes metal materials that are welded to each other. At least one of the metal materials includes pure copper including an inevitable impurity, more than 2 mass ppm of oxygen, and an additive element selected from the group consisting of Mg, Zr, Nb, Fe, Si, Al, Ca, V, Ni, Mn, Ti and Cr. A method of manufacturing a weldment includes melting a dilute copper alloy material by SCR continuous casting and rolling at a molten copper temperature of not less than 1100° C. and not more than 1320° C. to make a molten metal, forming a cast bar from the molten metal, forming a dilute copper alloy member by hot-rolling the cast bar, and welding the dilute copper alloy member to a metal material. The dilute copper alloy material includes the pure copper, more than 2 mass ppm of oxygen, and the additive element,?
摘要翻译：焊件包括彼此焊接的金属材料。至少一种金属材料包括包含不可避免的杂质的纯铜，大于2质量ppm的氧，以及选自Mg，Zr，Nb，Fe，Si，Al，Ca，V，Ni ，Mn，Ti和Cr。一种焊接件的制造方法，其特征在于，以不低于1100℃，不高于1320℃的熔融铜温度，通过SCR连续铸造，熔融稀释的铜合金材料，形成熔融金属从熔融金属中，通过对铸造棒进行热轧而形成稀铜合金构件，并将稀铜合金构件焊接到金属材料上。稀铜合金材料包括纯铜，超过2质量ppm的氧和添加元素，

4. 发明申请

US20120100390A1 Weldment and method of manufacturing the same 有权
标题翻译：焊接及其制造方法
公开(公告)号：US20120100390A1
公开(公告)日：2012-04-26
申请号：US13317463
申请日：2011-10-19
申请人： Hiromitsu Kuroda , Toru Sumi , Hideyuki Sagawa , Seigi Aoyama , Masayoshi Goto , Takahiko Hanada , Takahiro Sato , Hidenori Abe
发明人： Hiromitsu Kuroda , Toru Sumi , Hideyuki Sagawa , Seigi Aoyama , Masayoshi Goto , Takahiko Hanada , Takahiro Sato , Hidenori Abe
IPC分类号： B32B15/20 , B23K31/00
CPC分类号： C22C9/00 , B23K31/00 , B32B15/20 , C22C1/02 , C22C1/1036 , C22F1/00 , C22F1/08 , Y10T428/1266 , Y10T428/12667 , Y10T428/12882 , Y10T428/12903 , Y10T428/1291
摘要： A weldment includes metal materials that are welded to each other. At least one of the metal materials includes pure copper including an inevitable impurity, more than 2 mass ppm of oxygen, and an additive element selected from the group consisting of Mg, Zr, Nb, Fe, Si, Al, Ca, V, Ni, Mn, Ti and Cr. A method of manufacturing a weldment includes melting a dilute copper alloy material by SCR continuous casting and rolling at a molten copper temperature of not less than 1100° C. and not more than 1320° C. to make a molten metal, forming a cast bar from the molten metal, forming a dilute copper alloy member by hot-rolling the cast bar, and welding the dilute copper alloy member to a metal material. The dilute copper alloy material includes the pure copper, more than 2 mass ppm of oxygen, and the additive element,
摘要翻译：焊件包括彼此焊接的金属材料。至少一种金属材料包括包含不可避免的杂质的纯铜，大于2质量ppm的氧，以及选自Mg，Zr，Nb，Fe，Si，Al，Ca，V，Ni ，Mn，Ti和Cr。一种焊接件的制造方法，其特征在于，以不低于1100℃，不高于1320℃的熔融铜温度，通过SCR连续铸造，熔融稀释的铜合金材料，形成熔融金属从熔融金属中，通过对铸造棒进行热轧而形成稀铜合金构件，并将稀铜合金构件焊接到金属材料上。稀铜合金材料包括纯铜，大于2质量ppm的氧和添加元素，

5. 发明授权

US06362447B1 Electrode wire for electrical discharge machining apparatus 有权
公开(公告)号：US06362447B1
公开(公告)日：2002-03-26
申请号：US09264863
申请日：1999-03-09
申请人： Kiyoshi Shimojima , Seigi Aoyama , Hideo Kawano , Koichi Tamura , Takahiro Sato , Takamitsu Kimura , Masato Watabe
发明人： Kiyoshi Shimojima , Seigi Aoyama , Hideo Kawano , Koichi Tamura , Takahiro Sato , Takamitsu Kimura , Masato Watabe
IPC分类号： B23H100
摘要： It is an object of the invention to provide an electrode wire for an electrical discharge machining apparatus, which is low-priced in cost of production, has sufficient conductivity and strength at high temperature and is suited for improving the speed of electrical discharge machining. Cu—Zn alloy covering layer is formed around a core metallic wire formed of Cu—0.02 to 0.2 Zr alloy or Cu—0.15 to 0.25 Sn—0.15 to 0.25 In alloy.

6. 发明授权

US06250536B1 Method for manufacturing electrode wire for electrical discharge machining apparatus 有权
标题翻译：放电加工用电极线的制造方法
公开(公告)号：US06250536B1
公开(公告)日：2001-06-26
申请号：US09311531
申请日：1999-05-13
申请人： Kiyoshi Shimojima , Seigi Aoyama , Hideo Kawano , Koichi Tamura , Takahiro Sato , Takamitsu Kimura , Masato Watabe
发明人： Kiyoshi Shimojima , Seigi Aoyama , Hideo Kawano , Koichi Tamura , Takahiro Sato , Takamitsu Kimura , Masato Watabe
IPC分类号： B21D2100
CPC分类号： B23H7/08
摘要： The invention relates to a method for manufacturing an electrode wire for an electrical discharge machining apparatus, which is composed of a core wire formed of Cu or Cu-alloy and a covering layer formed of brass. A brass tape is longitudinally applied around a core wire to provide a pipe, a seam formed by butting longitudinal edges of the brass tape is continuously welded to provide a composite wire, area-reduction process of reduction rate less than 65% is applied to the brass pipe by means of a squeezing die, a heat treatment at a temperature higher a recrystallization one of brass is applied to the composite pipe, and thereafter the composite wire is processed to be reduced in area through plural reducing dies step by step.
摘要翻译：本发明涉及一种用于制造放电加工装置的电极线的方法，该方法由由Cu或Cu合金形成的芯线和由黄铜形成的覆盖层组成。黄铜带纵向施加在芯线周围以提供管道，通过对接黄铜带的纵向边缘而形成的接缝被连续地焊接以提供复合线，减少率小于65％的面积减小过程被应用于黄铜管通过挤压模具进行热处理，在复合管上施加黄铜重结晶的温度较高的热处理，然后通过多个还原模具逐步加工复合线的面积。

7. 发明授权

US5302877A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5302877A
公开(公告)日：1994-04-12
申请号：US29514
申请日：1993-03-11
申请人： Takahiro Sato , Hidenori Abe
发明人： Takahiro Sato , Hidenori Abe
IPC分类号： H03H9/25 , H03H9/02 , H03H9/64 , H01L41/08
CPC分类号： H03H9/02543
摘要： A surface acoustic wave device comprises lithium tetraborate single crystal substrate to make use of surface acoustic waves with higher propagation velocities and smaller propagation losses, whereby frequencies to be signal-processed can be as high as above 1 GHz. The surface acoustic wave device comprises a metal film formed on a surface of a lithium tetraborate single crystal substrate, the metal film being for exciting, receiving, reflecting and/or propagating surface acoustic waves, the metal film being so formed that a cut angle of the substrate, and a propagation direction of the surface acoustic waves are in an Eulerian angle representation of (39.degree.-51.degree., 66.degree.-114.degree., -20.degree.-20.degree.) and directions equivalent thereto. In this propagation direction few Rayleigh waves exit, and only surface acoustic waves of high propagation velocity are generated. Propagation losses can be eliminated.
摘要翻译：表面声波装置包括四硼酸锂单晶基板，以利用具有较高传播速度和较小传播损耗的表面声波，由此待信号处理的频率可高达1GHz以上。表面声波装置包括形成在四硼酸锂单晶基板的表面上的金属膜，金属膜用于激发，接收，反射和/或传播表面声波，金属膜被形成为使得金属膜的切割角度衬底和表面声波的传播方向处于（39度-51度，66度-114度，-20度-20度）和与此相当的方向的欧拉角度表示。在这个传播方向上，很少的瑞利波出射，只有高传播速度的表面声波才产生。传播损失可以消除。

8. 发明授权

US5434465A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5434465A
公开(公告)日：1995-07-18
申请号：US236015
申请日：1994-05-02
申请人： Takahiro Sato , Hidenori Abe
发明人： Takahiro Sato , Hidenori Abe
IPC分类号： H03H9/25 , H03H9/02 , H01L41/08
CPC分类号： H03H9/02543
摘要： A surface acoustic wave device comprises a piezoelectric substrate of lithium tetraborate single crystal, and a metal film formed on the surface of the piezoelectric substrate for exciting, receiving, reflecting and/or propagating surface acoustic waves, the metal film being so formed that a cut angle of the surface of the piezoelectric substrate and propagation direction of the surface acoustic wave are an Eulerian angle representation of (0.degree.-45.degree., 30.degree.-90.degree., 40.degree.-90.degree.) and directions equivalent thereto, the surface acoustic wave having higher propagation velocity than Rayleigh waves and leaky waves, and a characteristic of radiating part of energy of the surface acoustic wave into the piezoelectric surface while propagating.
摘要翻译：表面声波装置包括四硼酸锂单晶的压电基板和形成在压电基板的表面上用于激发，接收，反射和/或传播表面声波的金属膜，金属膜被形成为切割压电基板表面的角度和表面声波的传播方向是（0°-45°，30°-90°，40°-90°）和与其等效的方向的欧拉角表示，表面声波具有比瑞利波和泄漏波更高的传播速度，以及在传播时将表面声波的能量的一部分辐射到压电表面中的特性。

9. 发明授权

US09353310B2 Luminous material using fluorescence amorphous solid 有权
标题翻译：发光材料使用荧光无定形固体
公开(公告)号：US09353310B2
公开(公告)日：2016-05-31
申请号：US12716728
申请日：2010-03-03
申请人： Hiroki Iwanaga , Takahiro Sato
发明人： Hiroki Iwanaga , Takahiro Sato
IPC分类号： C09K11/06 , H01J1/62 , H01J63/04 , H05B33/14
CPC分类号： C09K11/06 , C09K2211/1096 , C09K2211/182 , H05B33/14
摘要： An amorphous luminous material, which is substantially composed of only rare earth complex compounds, wherein the compounds are two or more kinds of rare earth complexes, and rare earth metal ions, which are center ions of the two or more kinds of rare earth complexes, are different ions.
摘要翻译：一种无机发光材料，其基本上仅由稀土配合物组成，其中化合物为两种或多种稀土配合物，稀土金属离子为两种或多种稀土络合物的中心离子，是不同的离子。

10. 发明授权

US09331207B2 Oxide semiconductor device and manufacturing method therof 有权
标题翻译：氧化物半导体器件及其制造方法
公开(公告)号：US09331207B2
公开(公告)日：2016-05-03
申请号：US13937591
申请日：2013-07-09
申请人： Shunpei Yamazaki , Naoya Sakamoto , Takahiro Sato , Shunsuke Koshioka , Takayuki Cho , Yoshitaka Yamamoto , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki
发明人： Shunpei Yamazaki , Naoya Sakamoto , Takahiro Sato , Shunsuke Koshioka , Takayuki Cho , Yoshitaka Yamamoto , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki
IPC分类号： H01L29/10 , H01L29/786 , H01L29/201
CPC分类号： H01L29/7869 , H01L29/201
摘要： A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film.
摘要翻译：半导体器件包括栅电极; 栅电极上的栅极绝缘膜; 与所述栅极绝缘膜接触并且包括与所述栅电极重叠的沟道形成区域的氧化物半导体膜; 氧化物半导体膜上的源电极和漏电极; 以及氧化物半导体膜，源电极和漏电极上的氧化物绝缘膜。源极电极和漏极电极各自包括在沟道形成区域的端部具有端部的第一金属膜，在第一金属膜上的含有铜的第二金属膜和在第二金属膜上的第三金属膜。第二金属膜形成在比第一金属膜的端部的内侧。

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