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1. 发明授权

US08892119B2 Automatic position information transmission system and method using wireless data network 有权
标题翻译：自动位置信息传输系统及方法采用无线数据网络
公开(公告)号：US08892119B2
公开(公告)日：2014-11-18
申请号：US13285480
申请日：2011-10-31
申请人： Se-Yong Lee , Ki-Won Nam , Hyun-Jong Song , Kyo-Sik Hong , Chun-Dong Kim , Yeon-Seok Cho
发明人： Se-Yong Lee , Ki-Won Nam , Hyun-Jong Song , Kyo-Sik Hong , Chun-Dong Kim , Yeon-Seok Cho
IPC分类号： H04W24/00 , H04L29/08 , H04W4/02 , H04M1/725 , H04L29/06
CPC分类号： H04L67/00 , H04L63/0869 , H04M1/72561 , H04M1/72572 , H04W4/029
摘要： Disclosed are an automatic position information transmission system and a method using a wireless data network capable of improving convenience of search by registering icons associated with keywords on search screens of corresponding mobile phones and registering icons representing a search position range on the search screens while improving convenience of use by automatically transmitting position information regarding the corresponding mobile phones during a call attempt to a pre-authorized specific mobile phone through a wireless Internet network and automatically transmitting the position information regarding the corresponding mobile phones for each predetermined period or at the time of a call connection failure. The automatic position information transmission system and the method using the wireless data network can automatically transmit the moving routes or positions of children to the mobile phones of a parent as being previously set without performing the separate operations on the mobile phones.
摘要翻译：公开了一种自动位置信息传输系统和使用无线数据网络的方法，其能够通过在搜索屏幕的搜索屏幕上注册与关键词相关联的图标并且在搜索屏幕上注册表示搜索位置范围的图标来提高搜索的便利性，同时提高方便性在通过无线因特网在呼叫尝试期间自动发送关于相应的移动电话的位置信息给预先授权的特定移动电话，并且在每个预定时间段或自动发送关于相应的移动电话的位置信息呼叫连接失败。自动位置信息传输系统和使用无线数据网络的方法可以将移动路线或儿童的位置自动发送到父母的移动电话，作为预先设置的，而不对移动电话执行单独的操作。

2. 发明授权

US08478248B2 Bidirectional information sharing system and method using wireless data network 有权
标题翻译：使用无线数据网络的双向信息共享系统和方法
公开(公告)号：US08478248B2
公开(公告)日：2013-07-02
申请号：US13285613
申请日：2011-10-31
申请人： Se-Yong Lee , Ki-Won Nam , Hyun-Jong Song , Kyo-Sik Hong , Chun-Dong Kim , Yeon-Seok Cho
发明人： Se-Yong Lee , Ki-Won Nam , Hyun-Jong Song , Kyo-Sik Hong , Chun-Dong Kim , Yeon-Seok Cho
IPC分类号： H04W92/00
CPC分类号： H04M1/663 , H04L65/1069 , H04L65/1096 , H04M7/0027 , H04M2207/185 , H04M2250/64 , H04W4/16
摘要： Disclosed are a bidirectional information sharing system and a method using a wireless data network that can improve convenience of use by setting notification information regarding specific days which is set to replace sharing information of an unspecified third party that places a call and output the sharing information to output the notification information regarding specified days on the screen when receiving a call of the unspecified third party and input the feelings or inquiries of a user using the mobile phone sharing information of the user to allow the called party to previously know the corresponding contents before a telephone conversation at the time of call connection, and change and set sharing information so as to officially inform only close acquaintances of a relationship status of lovers or the like rather than informing unspecified individuals, in particular, inform or introduce acquaintances of the called party of relationship status.
摘要翻译：公开了一种双向信息共享系统和使用无线数据网络的方法，其可以通过设置关于特定日期的通知信息来提高使用方便性，所述通知信息被设置为替换发出呼叫的未指定第三方的共享信息并将共享信息输出到在接收到未指定的第三方的呼叫时输出关于指定日期的通知信息，并且使用用户的移动电话共享信息输入用户的感觉或查询，以允许被叫方先前知道相应的内容在通话连接时进行电话交谈，并更改和设置共享信息，以便仅向熟人通知恋人等的关系状态，而不是通知未指定的个人，特别是通知或介绍被叫方的熟人关系状态。

3. 发明授权

US09204271B2 System for providing ARS interlocking data using ring data and method thereof 有权
标题翻译：使用环形数据提供ARS联锁数据的系统及其方法
公开(公告)号：US09204271B2
公开(公告)日：2015-12-01
申请号：US13882736
申请日：2012-02-01
申请人： Se-Yong Lee , Ki-Won Nam , Hyun-Jong Song , Kyo-Sik Hong
发明人： Se-Yong Lee , Ki-Won Nam , Hyun-Jong Song , Kyo-Sik Hong
IPC分类号： G06Q10/10 , G06Q30/00 , G06Q30/02 , H04W4/16 , H04W4/00
CPC分类号： H04W4/16 , G06Q10/10 , G06Q30/01 , G06Q30/02 , H04M3/493 , H04M2203/252 , H04W4/50
摘要： Disclosed are a system for providing ARS interlocking data using ring data with drastically improved convenience and economic efficiency by allowing a user to transmit screen data packets output on a screen at a time in interlock with each number to be selected by his/her telephone when the user attempts a call connection to receive the ARS, and a method thereof. According to the present invention, the system for providing ARS interlocking data using ring data and a method thereof can rapidly select the desired items on the screen without the requirement of listening to all the ARS guide messages at the time of selecting specific items.
摘要翻译：公开了一种使用环形数据提供ARS联锁数据的系统，其通过允许用户一次在屏幕上输出屏幕数据分组，与每个要由他/她的电话选择的数字相互联系地提供方便性和经济效率，用户尝试呼叫连接来接收ARS及其方法。根据本发明，使用环形数据提供ARS联锁数据的系统及其方法可以在选择特定项目时快速地选择屏幕上的期望项目而不需要收听所有ARS指导消息。

4. 发明申请

US20140018054A1 SYSTEM FOR PROVIDING ARS INTERLOCKING DATA USING RING DATA AND METHOD THEREOF 有权
标题翻译：使用环数据提供ARS互锁数据的系统及其方法
公开(公告)号：US20140018054A1
公开(公告)日：2014-01-16
申请号：US13882736
申请日：2012-02-01
申请人： Se-Yong Lee , Ki-Won Nam , Hyun-Jong Song , Kyo-Sik Hong
发明人： Se-Yong Lee , Ki-Won Nam , Hyun-Jong Song , Kyo-Sik Hong
IPC分类号： H04W4/16
CPC分类号： H04W4/16 , G06Q10/10 , G06Q30/01 , G06Q30/02 , H04M3/493 , H04M2203/252 , H04W4/50
摘要： Disclosed are a system for providing ARS interlocking data using ring data with drastically improved convenience and economic efficiency by allowing a user to transmit screen data packets output on a screen at a time in interlock with each number to be selected by his/her telephone when the user attempts a call connection to receive the ARS, and a method thereof. According to the present invention, the system for providing ARS interlocking data using ring data and a method thereof can rapidly select the desired items on the screen without the requirement of listening to all the ARS guide messages at the time of selecting specific items.
摘要翻译：公开了一种使用环形数据提供ARS联锁数据的系统，其通过允许用户一次在屏幕上输出屏幕数据分组，与每个要由他/她的电话选择的数字相互联系地提供方便性和经济效率，用户尝试呼叫连接来接收ARS及其方法。根据本发明，使用环形数据提供ARS联锁数据的系统及其方法可以在选择特定项目时快速地选择屏幕上的期望项目而不需要收听所有ARS指导消息。

5. 发明申请

US20140074644A1 ON-LINE SALES SYSTEM USING A SOCIAL AUCTION 审中-公开
标题翻译：在线销售系统使用社会拍卖
公开(公告)号：US20140074644A1
公开(公告)日：2014-03-13
申请号：US14116736
申请日：2012-05-10
申请人： Ki-Won Nam
发明人： Ki-Won Nam
IPC分类号： G06Q30/08
CPC分类号： G06Q30/08
摘要： Disclosed is an on-line sales system using a social auction capable of giving an increased discount rate as time progresses to a reserved purchaser paying for products in part based on a future purchasing condition on products, providing a divided purchase ticket to participate in a social auction to the purchaser so as to make a bid one time only, activating a sale of participating companies by progressing the social auction, supporting an integrated successful bid price corresponding to a bid signal of a purchaser at the time of purchasing products, and activating a sale in an open market from which the divided purchase ticket is issued. According to the on-line sales system using a social auction, the seller sells the divided purchase ticket to assure a future sale, thereby easily securing production funds, implementing planned production, and effectively performing promotion and sales.
摘要翻译：披露了一种使用社交拍卖的在线销售系统，可以根据产品的未来采购条件部分地向保留的购买者付款的预订购买者提供更高的折扣率，提供分享的购买票参与社交拍卖给购买者，以便只进行一次投标，通过进行社交拍卖激活参与公司的销售，在购买产品时支持与买方的投标信号对应的综合成功投标价格，并激活在公开市场上销售分开的采购票。根据使用社交拍卖的在线销售系统，卖方销售分割的采购票，以确保未来的销售，从而容易地确保生产资金，实施计划生产，有效执行促销和销售。

6. 发明授权

US07803710B2 Method for fabricating semiconductor device capable of decreasing critical dimension in peripheral region 失效
标题翻译：制造能够减小外围区域临界尺寸的半导体器件的方法
公开(公告)号：US07803710B2
公开(公告)日：2010-09-28
申请号：US12484748
申请日：2009-06-15
申请人： Kyung-Won Lee , Ki-Won Nam
发明人： Kyung-Won Lee , Ki-Won Nam
IPC分类号： H01L21/306
CPC分类号： H01L21/31144 , H01L21/31116 , H01L21/32139 , H01L27/10894
摘要： A method for fabricating a semiconductor device where a critical dimension in a peripheral region is decreased. The method includes the steps of: forming a silicon nitride layer on a substrate including a cell region and a peripheral region; forming a silicon oxynitride layer on the silicon nitride layer; forming a line-type photoresist pattern on the silicon oxynitride layer such that the photoresist pattern in the cell region has a width larger than that of a final pattern structure and the photoresist pattern in the peripheral region has a width that reduces an incidence of pattern collapse; etching the silicon oxynitride layer and the silicon nitride layer until widths of a remaining silicon oxynitride layer and a remaining silicon nitride layer are smaller than the width of the photoresist pattern used as an etch mask through suppressing generation of polymers; and over-etching the remaining silicon nitride layer.
摘要翻译：一种半导体器件的制造方法，其中周边区域的临界尺寸减小。该方法包括以下步骤：在包括单元区域和周边区域的基板上形成氮化硅层; 在氮化硅层上形成氧氮化硅层; 在氮氧化硅层上形成线型光致抗蚀剂图案，使得单元区域中的光致抗蚀剂图案的宽度大于最终图案结构的宽度，并且周边区域中的光致抗蚀剂图案具有减小图案崩溃的发生率的宽度 ; 通过抑制聚合物的产生，蚀刻硅氧氮化物层和氮化硅层，直到剩余的氮氧化硅层和剩余的氮化硅层的宽度小于用作蚀刻掩模的光致抗蚀剂图案的宽度; 并过剩蚀刻剩余的氮化硅层。

7. 发明授权

US07632746B2 Method for patterning metal line in semiconductor device 失效
标题翻译：在半导体器件中图案化金属线的方法
公开(公告)号：US07632746B2
公开(公告)日：2009-12-15
申请号：US11641295
申请日：2006-12-18
申请人： Ki-Won Nam , Seung-Bum Kim
发明人： Ki-Won Nam , Seung-Bum Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/76841 , H01L21/02071 , H01L21/32135
摘要： A method for patterning a metal line includes forming a barrier metal layer and a metal layer, etching the metal layer, etching the barrier metal layer to form a passivation layer on an etched surface of the barrier metal layer, and cleaning a resultant structure where the passivation layer is formed.
摘要翻译：图案化金属线的方法包括形成阻挡金属层和金属层，蚀刻金属层，蚀刻阻挡金属层以在阻挡金属层的蚀刻表面上形成钝化层，并且清洗所得到的结构，其中形成钝化层。

8. 发明申请

US20090253263A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE CAPABLE OF DECREASING CRITICAL DIMENSION IN PERIPHERAL REGION 失效
标题翻译：用于制造能够减少外围区域关键尺寸的半导体器件的方法
公开(公告)号：US20090253263A1
公开(公告)日：2009-10-08
申请号：US12484748
申请日：2009-06-15
申请人： Kyung-Won Lee , Ki-Won Nam
发明人： Kyung-Won Lee , Ki-Won Nam
IPC分类号： H01L21/306
CPC分类号： H01L21/31144 , H01L21/31116 , H01L21/32139 , H01L27/10894
摘要： A method for fabricating a semiconductor device where a critical dimension in a peripheral region is decreased. The method includes the steps of: forming a silicon nitride layer on a substrate including a cell region and a peripheral region; forming a silicon oxynitride layer on the silicon nitride layer; forming a line-type photoresist pattern on the silicon oxynitride layer such that the photoresist pattern in the cell region has a width larger than that of a final pattern structure and the photoresist pattern in the peripheral region has a width that reduces an incidence of pattern collapse; etching the silicon oxynitride layer and the silicon nitride layer until widths of a remaining silicon oxynitride layer and a remaining silicon nitride layer are smaller than the width of the photoresist pattern used as an etch mask through suppressing generation of polymers; and over-etching the remaining silicon nitride layer.
摘要翻译：一种半导体器件的制造方法，其中周边区域的临界尺寸减小。该方法包括以下步骤：在包括单元区域和周边区域的基板上形成氮化硅层; 在氮化硅层上形成氧氮化硅层; 在氮氧化硅层上形成线型光致抗蚀剂图案，使得单元区域中的光致抗蚀剂图案的宽度大于最终图案结构的宽度，并且周边区域中的光致抗蚀剂图案具有减小图案崩溃的发生率的宽度 ; 通过抑制聚合物的产生，蚀刻硅氧氮化物层和氮化硅层，直到剩余的氮氧化硅层和剩余的氮化硅层的宽度小于用作蚀刻掩模的光致抗蚀剂图案的宽度; 并过剩蚀刻剩余的氮化硅层。

9. 发明申请

US20080160778A1 Method for forming pattern using hard mask 失效
标题翻译：使用硬掩模形成图案的方法
公开(公告)号：US20080160778A1
公开(公告)日：2008-07-03
申请号：US11823770
申请日：2007-06-28
申请人： Ki-Won Nam , Ky-Hyun Han
发明人： Ki-Won Nam , Ky-Hyun Han
IPC分类号： H01L21/467
CPC分类号： H01L21/0332 , H01L21/32139
摘要： A method for forming a pattern in a semiconductor device includes forming an etch target layer, forming a hard mask over the etch target layer, the hard mask including a multiple-layer stack structure comprising a bottom layer, a transformed layer, and an upper layer, wherein the transformed layer is formed by transforming a surface of the bottom layer. The hard mask and the etch target layer are etched.
摘要翻译：一种用于在半导体器件中形成图案的方法包括形成蚀刻目标层，在蚀刻目标层上形成硬掩模，硬掩模包括多层堆叠结构，该多层堆叠结构包括底层，变换层和上层，其中通过转换底层的表面形成变形层。硬掩模和蚀刻目标层被蚀刻。

10. 发明申请

US20080003822A1 Method for fabricating semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20080003822A1
公开(公告)日：2008-01-03
申请号：US11805105
申请日：2007-05-22
申请人： Ki-Won Nam , Ju-Hee Hwang
发明人： Ki-Won Nam , Ju-Hee Hwang
IPC分类号： H01L21/44
CPC分类号： H01L21/02074 , H01L21/32115
摘要： A method for fabricating a semiconductor device includes forming an insulation pattern including an open region over a substrate, forming a polysilicon layer over the insulation pattern, the open region, and the substrate, performing an etch-back process on the polysilicon layer to form a plug, and removing polymers generated during the etch-back process using a gas mixture including a first gas comprising a fluorine functional group and a second gas comprising an oxygen functional group.
摘要翻译：一种制造半导体器件的方法包括在衬底上形成包括开放区域的绝缘图案，在绝缘图案，开放区域和衬底之上形成多晶硅层，在多晶硅层上执行回蚀处理，以形成使用包括包含氟官能团的第一气体和包含氧官能团的第二气体的气体混合物在回蚀工艺期间产生的聚合物堵塞和除去。

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